公开(公告)号：US20120164327A1

公开(公告)日：2012-06-28

申请号：US13334382

申请日：2011-12-22

申请人： Jun SATO ,  Pao-Hwa Chou

发明人： Jun SATO ,  Pao-Hwa Chou

IPC分类号： C23C16/40 ,  C23C16/52

CPC分类号： H01L21/02304 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/402 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02299 ,  H01L21/02312

摘要： A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, forming a seed layer on the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer, wherein the seed layer formed on the tungsten film or the tungsten oxide film is formed by heating the object to be processed and supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film.

摘要翻译： 成膜方法包括在被处理物上形成钨膜或氧化钨膜，在钨膜或氧化钨膜上形成种子层，在种子层上形成氧化硅膜，其中种子 通过加热被处理物并将氨基硅烷系气体供给到钨膜或氧化钨膜的表面，形成在钨膜或氧化钨膜上形成的层。

公开(公告)号：US08025931B2

公开(公告)日：2011-09-27

申请号：US11822979

申请日：2007-07-11

申请人： Pao-Hwa Chou ,  Kazuhide Hasebe

发明人： Pao-Hwa Chou ,  Kazuhide Hasebe

IPC分类号： C23C16/00

CPC分类号： C23C16/452 ,  C23C16/345 ,  C23C16/4405

摘要： A method for using a film formation apparatus performs a first film formation process, while supplying a first film formation gas into a process field inside a process container, thereby forming a first thin film on a first target substrate inside the process field. After unloading the first target substrate from the process container, the method performs a cleaning process of an interior of the process container, while supplying a cleaning gas into the process field, and generating plasma of the cleaning gas by an exciting mechanism. Then, the method performs a second film formation process, while supplying a second film formation gas into the process field, thereby forming a second thin film on a target substrate inside the process field. The second film formation process is a plasma film formation process that generates plasma of the second film formation gas by the exciting mechanism.

摘要翻译： 使用成膜装置的方法进行第一成膜处理，同时将第一成膜气体供给到处理容器内的处理场中，从而在处理场内的第一靶基板上形成第一薄膜。 在从处理容器卸载第一目标基板之后，该方法对处理容器的内部执行清洁处理，同时向处理区域供应清洁气体，并通过激励机构产生清洁气体的等离子体。 然后，该方法进行第二成膜工艺，同时将第二成膜气体供应到工艺场中，从而在工艺场内的目标衬底上形成第二薄膜。 第二成膜工艺是通过激发机构产生第二成膜气体的等离子体的等离子体膜形成工艺。

公开(公告)号：US07964241B2

公开(公告)日：2011-06-21

申请号：US11892948

申请日：2007-08-28

申请人： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Kota Umezawa ,  Kentaro Kadonaga ,  Hao-Hsiang Chang

发明人： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Kota Umezawa ,  Kentaro Kadonaga ,  Hao-Hsiang Chang

IPC分类号： C23C16/00

CPC分类号： C23C16/45525 ,  C03C17/225 ,  C03C2217/281 ,  C03C2217/282 ,  C03C2217/283 ,  C03C2218/152 ,  C23C16/30 ,  C23C16/45542 ,  C23C16/45546 ,  C23C16/45578

摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.

摘要翻译： 通过CVD在目标基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化气体或氮氧化气体的第二工艺气体的工艺领域中，含有硼的第三工艺气体 和含有碳氢化合物气体的第四工艺气体。 第一步骤是在停止供给第二处理气体的第一处理气体和作为第三和第四处理气体之一的前一个气体的供给的同时，提供作为第三和第四处理气体中的另一个的后续气体 。 第二步骤在停止第二处理气体和前一个气体的供给的同时，进行后续气体的供给。 第三步骤在停止供应第一处理气体的同时进行第二处理气体的供应。

公开(公告)号：US20100130015A1

公开(公告)日：2010-05-27

申请号：US12441754

申请日：2008-06-06

申请人： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

发明人： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

IPC分类号： H01L21/32

CPC分类号： G03F7/405 ,  G03F7/0035 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139

摘要： Disclosed is a patterning method including: forming a first film on a substrate; forming a first resist film on the first film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; forming a second resist film on the silicon oxide film; processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and processing the first film by using the first resist pattern and the second resist pattern as a mask.

摘要翻译： 公开了一种图案化方法，包括：在基板上形成第一膜; 在第一膜上形成第一抗蚀剂膜; 通过光刻将第一抗蚀剂膜加工成具有预设间距的第一抗蚀剂图案; 通过向所述基板交替地供给含有有机硅的第一气体和含有活性氧的第二气体，在所述第一抗蚀剂图案和所述第一膜上形成氧化硅膜; 在氧化硅膜上形成第二抗蚀剂膜; 通过光刻将第二抗蚀剂膜加工成具有预设间距的第二抗蚀剂图案; 以及通过使用第一抗蚀剂图案和第二抗蚀剂图案作为掩模来处理第一膜。

公开(公告)号：US20090191722A1

公开(公告)日：2009-07-30

申请号：US12320018

申请日：2009-01-14

申请人： Kazuhide Hasebe ,  Nobutake Nodera ,  Masanobu Matsunaga ,  Jun Satoh ,  Pao-Hwa Chou

发明人： Kazuhide Hasebe ,  Nobutake Nodera ,  Masanobu Matsunaga ,  Jun Satoh ,  Pao-Hwa Chou

IPC分类号： H01L21/31 ,  B05C11/00

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/45542

摘要： A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas and communicating with an exciting mechanism for exciting the second process gas to be supplied. The method includes obtaining a relation formula or relation table that represents relationship of a cycle mixture manner of the plasma cycle and the non-plasma cycle relative to a film quality factor of the silicon nitride film; determining a specific manner of the cycle mixture manner based on a target value of the film quality factor with reference to the relation formula or relation table; and arranging the film formation process in accordance with the specific manner.

摘要翻译： 使用成膜方法在目标衬底上形成氮化硅膜，通过重复等离子体循环和非等离子体循环多次，在被配置为选择性地供给包含硅烷族的第一工艺气体的工艺过程中 气体和含有氮化气体的第二工艺气体，并与用于激发待供应的第二工艺气体的激励机构连通。 该方法包括获得表示等离子体循环与非等离子体循环的循环混合方式相对于氮化硅膜的膜质量因子的关系的关系式或关系表; 参照关系公式或关系表，基于电影品质因子的目标值确定循环混合方式的具体方式; 并根据具体方式布置成膜处理。

公开(公告)号：US07300885B2

公开(公告)日：2007-11-27

申请号：US11166073

申请日：2005-06-27

申请人： Kazuhide Hasebe ,  Pao-Hwa Chou

发明人： Kazuhide Hasebe ,  Pao-Hwa Chou

IPC分类号： H01L21/31

CPC分类号： C23C16/45578 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45546 ,  H01J37/3244 ,  H01J2237/3321 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/3185

摘要： A film formation method for a semiconductor process is arranged to form a thin film on a target substrate by CVD, while supplying a first process gas for film formation and a second process gas for reacting with the first process gas to a process field accommodating the target substrate. The method alternately includes first to fourth steps. The first step performs supply of the first and second process gases to the process field. The second step stops supply of the first and second process gases to the process field. The third step performs supply of the second process gas to the process field while stopping supply of the first process gas to the process field. The fourth step stops supply of the first and second process gases to the process field.

摘要翻译： 半导体工艺的成膜方法被布置成通过CVD在目标衬底上形成薄膜，同时提供用于成膜的第一工艺气体和用于与第一工艺气体反应的第二工艺气体到容纳靶的工艺场 基质。 该方法交替地包括第一至第四步骤。 第一步进行第一和第二工艺气体的供应。 第二步停止向工艺场供应第一和第二工艺气体。 第三步骤在停止向处理场供应第一处理气体的同时，向处理区域供应第二处理气体。 第四步骤停止将第一和第二工艺气体供应到工艺现场。

公开(公告)号：US20050282365A1

公开(公告)日：2005-12-22

申请号：US11155629

申请日：2005-06-20

申请人： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Chaeho Kim

发明人： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Chaeho Kim

IPC分类号： C23C16/00 ,  C23C16/24 ,  H01L21/26 ,  H01L21/42

CPC分类号： C23C16/24 ,  C23C16/45523 ,  Y10T117/1024

摘要： A film formation apparatus for a semiconductor process includes a source gas supply circuit to supply into a process container a source gas for depositing a thin film on target substrates, and a mixture gas supply circuit to supply into the process container a mixture gas containing a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas. The mixture gas supply circuit includes a gas mixture tank disposed outside the process container to mix the doping gas with the dilution gas to form the mixture gas, a mixture gas supply line to supply the mixture gas from the gas mixture tank into the process container, a doping gas supply circuit to supply the doping gas into the gas mixture tank, and a dilution gas supply circuit to supply the dilution gas into the gas mixture tank.

摘要翻译： 一种用于半导体工艺的成膜装置包括：源气体供应电路，用于向处理容器中提供用于在目标衬底上沉积薄膜的源气体;以及混合气体供应电路，向处理容器供应含有掺杂物质的混合气体 用于用杂质掺杂薄膜的气体和用于稀释掺杂气体的稀释气体。 混合气体供给回路包括：设置在处理容器外部的混合气体，将掺杂气体与稀释气体混合，形成混合气体，混合气体供给管路，将混合气体从气体混合罐供给到处理容器内; 用于将掺杂气体供应到气体混合罐中的掺杂气体供应回路，以及将稀释气体供应到气体混合罐中的稀释气体供给回路。

公开(公告)号：US08642486B2

公开(公告)日：2014-02-04

申请号：US13337743

申请日：2011-12-27

申请人： Toshiyuki Ikeuchi ,  Pao-Hwa Chou ,  Kazuya Yamamoto ,  Kentarou Sera

发明人： Toshiyuki Ikeuchi ,  Pao-Hwa Chou ,  Kazuya Yamamoto ,  Kentarou Sera

IPC分类号： H01L21/31

CPC分类号： C23C16/52 ,  C23C16/402 ,  C23C16/45546 ,  C23C16/46 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/67109 ,  H01L21/67248

摘要： A control unit heats a reaction pipe to a load temperature by controlling a temperature-raising heater 16, and then makes semiconductor wafers received in the reaction pipe. Next, the control unit heats the reaction pipe in which the semiconductor wafers are received to a film formation temperature by controlling the temperature-raising heater, and then forms thin films on the semiconductor wafers by supplying a film forming gas into the reaction pipe from a process gas introducing pipe. Also, the control unit sets the load temperature to a temperature higher than the film formation temperature.

摘要翻译： 控制单元通过控制升温加热器16将反应管加热到负载温度，然后使半导体晶片接收在反应管中。 接下来，控制单元通过控制升温加热器将接收半导体晶片的反应管加热成膜温度，然后在半导体晶片上通过从反应管中提供成膜气体而形成薄膜 工艺气体导入管。 此外，控制单元将负载温度设定为高于成膜温度的温度。

公开(公告)号：US08343594B2

公开(公告)日：2013-01-01

申请号：US12167270

申请日：2008-07-03

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Chaeho Kim ,  Byounghoon Lee ,  Pao-Hwa Chou

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Chaeho Kim ,  Byounghoon Lee ,  Pao-Hwa Chou

IPC分类号： H05H1/24

CPC分类号： C23C16/45512 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/509

摘要： A film formation apparatus for a semiconductor process includes a process gas supply system configured to supply process gases. The process gas supply system includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gas supply line configured to supply the mixture gas from the gas mixture tank to a process field, a second process gas supply circuit having a second process gas supply line configured to supply a second process gas to the process field without passing through the gas mixture tank, and first and second switching valves disposed on the mixture gas supply line and the second process gas supply line, respectively. A control section controls the first and second switching valves to be opened and closed so as to alternately and pulse-wise supply the mixture gas and the second process gas to the process field.

摘要翻译： 一种用于半导体工艺的成膜装置包括：配置成供给处理气体的工艺气体供给系统。 工艺气体供给系统包括配置成混合第一和第三处理气体以形成混合气体的气体混合罐;配置成将来自气体混合罐的混合气体供给到处理场的混合气体供应管线，第二工艺气体供应 电路，具有第二工艺气体供给管线，其被配置为在不通过所述气体混合罐的情况下将第二处理气体供给到所述处理场，以及分别设置在所述混合气体供给管线和所述第二处理气体供给管线上的第一和第二切换阀。 控制部分控制第一和第二切换阀的打开和关闭，以便将混合气体和第二处理气体交替地和脉冲地供给到处理场。

公开(公告)号：US08216648B2

公开(公告)日：2012-07-10

申请号：US12954778

申请日：2010-11-26

申请人： Masanobu Matsunaga ,  Keisuke Suzuki ,  Jaehyuk Jang ,  Pao-Hwa Chou ,  Masato Yonezawa ,  Masayuki Hasegawa ,  Kazuhide Hasebe

发明人： Masanobu Matsunaga ,  Keisuke Suzuki ,  Jaehyuk Jang ,  Pao-Hwa Chou ,  Masato Yonezawa ,  Masayuki Hasegawa ,  Kazuhide Hasebe

IPC分类号： C23C16/34

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/45542 ,  C23C16/45546 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/0228

摘要： A film formation method includes setting a target object at a temperature of 150 to 550° C., the target object being placed inside the process container configured to hold a vacuum state therein, and then, repeating a cycle alternately including a first supply step and a second supply step a plurality of times to form a silicon nitride film on the target object. The first supply step is a step of supplying monochlorosilane gas as an Si source into the process container while setting the process container at a pressure of 66.65 to 666.5 Pa therein. The second supply step is a step of supplying a nitrogen-containing gas as a nitriding gas into the process container.

摘要翻译： 成膜方法包括将目标物体设定在150〜550℃的温度，将被处理物体配置在保持真空状态的处理容器的内部，然后交替地重复包含第一供给工序和 第二供给步骤多次以在目标物体上形成氮化硅膜。 第一供给步骤是将处理容器中的一氯硅烷气体作为Si源供给到处理容器中，同时使处理容器的压力为66.65〜666.5Pa。 第二供给步骤是将作为氮化气体的含氮气体供给到处理容器中的步骤。