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51 条记录 (耗时 0.024 秒)

    Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
    23.
    发明授权
    Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff 有权
    使用激光辅助外延提升制造GaN半导体结构的方法

    公开(公告)号：US06455340B1

    公开(公告)日：2002-09-24

    申请号：US10024236

    申请日：2001-12-21

    申请人： Christopher L. Chua ,  Michael A. Kneissl ,  David P. Bour

    发明人： Christopher L. Chua ,  Michael A. Kneissl ,  David P. Bour

    IPC分类号： H01L2100

    CPC分类号： H01L33/465 ,  B82Y20/00 ,  H01L33/0079 ,  H01L33/105 ,  H01S5/0213 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/34333

    摘要： A method is provided for fabricating a nitride based resonant cavity semiconductor structure with a first distributed Bragg reflector on a sapphire substrate, a second substrate bonded to the first distributed Bragg reflector, the sapphire substrate removed by laser-assisted epitaxial lift-off, and fabricating a second Bragg reflector on the semiconductor structure opposite the first distributed Bragg reflector. The nitride based resonant cavity semiconductor structure can be a VCSEL, LED or photodetector, or a combination of said devices.

    摘要翻译： 提供了一种制造氮化物基谐振腔半导体结构的方法，其中蓝宝石衬底上具有第一分布式布拉格反射器，与第一分布式布拉格反射器接合的第二衬底，通过激光辅助外延剥离去除的蓝宝石衬底以及制造 在与第一分布布拉格反射器相对的半导体结构上的第二布拉格反射器。 基于氮化物的谐振腔半导体结构可以是VCSEL，LED或光电检测器，或者所述器件的组合。

    Two section blue laser diode with reduced output power droop
    24.
    发明授权
    Two section blue laser diode with reduced output power droop 有权
    两部分蓝色激光二极管，输出功率降低

    公开(公告)号：US06526083B1

    公开(公告)日：2003-02-25

    申请号：US09972361

    申请日：2001-10-09

    申请人： Michael A. Kneissl ,  Thomas L. Paoli

    发明人： Michael A. Kneissl ,  Thomas L. Paoli

    IPC分类号： H01S5026

    CPC分类号： B82Y20/00 ,  H01S5/0265 ,  H01S5/0287 ,  H01S5/0625 ,  H01S5/06251 ,  H01S5/34333

    摘要： A III-V nitride blue laser diode has an amplifier region and a modulator region. The amplifier region has a constant current to keep the region near the lasing threshold. The modulator region has a small varying forward current or reverse bias voltage which controls the light output of the laser. This two section blue laser diode requires much lower power consumption than directly modulated lasers which reduces transient heating and “drooping” of the light output.

    摘要翻译： III-V族氮化物蓝色激光二极管具有放大器区域和调制器区域。 放大器区域具有恒定电流以保持该区域接近激光阈值。 调制器区域具有小的变化的正向电流或反向偏置电压，其控制激光器的光输出。 这两部分蓝色激光二极管比直接调制的激光器要低得多的功耗，减少了瞬态加热和“下垂”光输出。

    Method For Controlling The Structure And Surface Qualities Of A Thin Film And Product Produced Thereby
    27.
    发明申请
    Method For Controlling The Structure And Surface Qualities Of A Thin Film And Product Produced Thereby 审中-公开
    用于控制薄膜的结构和表面质量的方法以及由此产生的产品

    公开(公告)号：US20090053845A1

    公开(公告)日：2009-02-26

    申请号：US12265379

    申请日：2008-11-05

    申请人： William S. Wong ,  Michael A. Kneissl ,  Mark Teepe

    发明人： William S. Wong ,  Michael A. Kneissl ,  Mark Teepe

    IPC分类号： H01L21/18

    CPC分类号： H01L33/0079 ,  B82Y20/00 ,  H01L21/30621 ,  H01S5/0213 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/32341 ,  H01S5/34333

    摘要： A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching. Following etching, a substrate is bonded to the exposed surface which acts as a heat sink and may be conductive providing for backside electrical contact to the active region.

    摘要翻译： 在从半导体结构去除衬底和模板层之后提供改进的表面质量的系统和方法在将散热器/导电衬底接合到衬底之前为层（例如量子阱异质结构有源区）提供改进的表面质量 结构体。 在物理去除蓝宝石衬底之后，将诸如旋涂聚合物光致抗蚀剂的牺牲涂层施加到暴露的GaN表面。 该牺牲涂层提供了一般平行于下层的界面的平面的平面。 选择牺牲涂层和蚀刻条件使得牺牲涂层的蚀刻速率近似与GaN和下面的层的蚀刻速率匹配，使得蚀刻期间的物理表面轮廓近似于蚀刻之前牺牲涂层的物理表面轮廓。 在蚀刻之后，衬底被结合到作为散热器的暴露表面，并且可以是导电的，用于与有源区域的背面电接触。

    LED or laser enabled real-time PCR system and spectrophotometer
    28.
    发明授权
    LED or laser enabled real-time PCR system and spectrophotometer 有权
    LED或激光启用实时PCR系统和分光光度计

    公开(公告)号：US07122799B2

    公开(公告)日：2006-10-17

    申请号：US10739706

    申请日：2003-12-18

    申请人： Huangpin Ben Hsieh ,  Michael A. Kneissl

    发明人： Huangpin Ben Hsieh ,  Michael A. Kneissl

    IPC分类号： G01J5/02

    CPC分类号： G01N21/6454 ,  B01L7/52 ,  B01L2300/0654 ,  B01L2300/0829 ,  G01N21/0303 ,  G01N21/253 ,  G01N21/272 ,  G01N21/31 ,  G01N21/33 ,  G01N21/6452 ,  G01N21/6486 ,  G01N2201/0627

    摘要： A system for conducting a polymerase chain reaction (PCR) assay upon a collection of samples is disclosed. The PCR assay is performed by absorption detection. The system includes a multi-well plate which is adapted to retain a collection of sample wells. This system includes a thermal cycler for the multi-well plate. The system additionally includes a collection of photodetectors, and a corresponding number of light sources. The light sources are positioned such that light emitted from each of the respective light sources passes through a corresponding well retained in the multi-well plate and to a corresponding photodetector. The system also includes a processor or other means for analyzing the output signals from the photodetectors. In certain versions of the system, ultra-violet light is used.

    摘要翻译： 公开了在收集样品时进行聚合酶链反应（PCR）测定的系统。 通过吸收检测进行PCR测定。 该系统包括多孔板，其适于保留一组样品孔。 该系统包括用于多孔板的热循环仪。 该系统还包括光电检测器的集合和相应数量的光源。 光源被定位成使得从每个相应光源发射的光穿过保持在多孔板中的对应的阱和相应的光电检测器。 该系统还包括用于分析来自光电检测器的输出信号的处理器或其它装置。 在系统的某些版本中，使用紫外光。