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32 条记录 (耗时 0.029 秒)

    Interface layer for the fabrication of electronic devices
    21.
    发明授权
    Interface layer for the fabrication of electronic devices 失效
    接口层用于制造电子设备

    公开(公告)号：US07315068B2

    公开(公告)日：2008-01-01

    申请号：US11077240

    申请日：2005-03-09

    申请人： Scott Haubrich ,  Klaus Kunze ,  James C. Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    发明人： Scott Haubrich ,  Klaus Kunze ,  James C. Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    IPC分类号： H01L29/94

    CPC分类号： H01L27/1292

    摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

    摘要翻译： 本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。 界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。 活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。 有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。

    Interface layer for the fabrication of electronic devices
    23.
    发明授权
    Interface layer for the fabrication of electronic devices 失效
    接口层用于制造电子设备

    公开(公告)号：US06911385B1

    公开(公告)日：2005-06-28

    申请号：US10226903

    申请日：2002-08-22

    申请人： Scott Haubrich ,  Klaus Kunze ,  James C Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    发明人： Scott Haubrich ,  Klaus Kunze ,  James C Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    IPC分类号： H01L21/44 ,  H01L21/76 ,  H01L21/77

    CPC分类号： H01L27/1292

    摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

    摘要翻译： 本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。 界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。 活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。 有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。

    Nanoparticle synthesis and the formation of inks therefrom
    26.
    发明授权
    Nanoparticle synthesis and the formation of inks therefrom 有权
    纳米颗粒合成和油墨的形成

    公开(公告)号：US06878184B1

    公开(公告)日：2005-04-12

    申请号：US10215952

    申请日：2002-08-09

    申请人： Joerg Rockenberger ,  Fabio Zurcher ,  Scott Haubrich ,  Nassrin Sleiman

    发明人： Joerg Rockenberger ,  Fabio Zurcher ,  Scott Haubrich ,  Nassrin Sleiman

    IPC分类号： B22F1/00 ,  B22F9/24 ,  C09D11/00 ,  C09D11/02 ,  H01B1/02 ,  H01B1/22 ,  H05K3/12

    CPC分类号： B22F1/0022 ,  B22F1/0018 ,  B22F9/24 ,  B22F2998/00 ,  B82Y30/00 ,  C09D11/03 ,  C09D11/30 ,  H01B1/02 ,  H01B1/22 ,  H05K3/1241 ,  B22F1/0062

    摘要： Methods for making metal-based nanoparticles and inks are disclosed. In accordance with the method of the present invention, molecular metal precursors are reduced in the presence of a reaction medium to form the nanoparticles. The molecular metal precursors are preferably reduced by heating the metal precursor in the medium, by adding a reducing agent, such an aldehyde or a combination thereof. Metal precursor are preferably metal oxides, transition metal complexes or combination thereof. The method of the present invention is used to make high yield nanoparticles with a range of particle size distributions. Nanoparticle formed by the present invention include mixtures of nanoparticle, alloy nanoparticles, metal core shell nanoparticles or nanoparticle comprising a single metal species.

    摘要翻译： 公开了制备金属基纳米颗粒和油墨的方法。 根据本发明的方法，分子金属前体在反应介质存在下还原形成纳米颗粒。 分子金属前体优选通过加热介质中的金属前体，通过加入还原剂，醛或其组合来还原。 金属前体优选为金属氧化物，过渡金属络合物或其组合。 本发明的方法用于制备具有粒度分布范围的高产率纳米颗粒。 由本发明形成的纳米颗粒包括纳米颗粒，合金纳米颗粒，金属核壳纳米颗粒或包含单一金属物质的纳米颗粒的混合物。

    Printed dopant layers
    30.
    发明申请
    Printed dopant layers 有权
    印刷掺杂剂层

    公开(公告)号：US20080044964A1

    公开(公告)日：2008-02-21

    申请号：US11888949

    申请日：2007-08-03

    申请人： Arvind Kamath ,  James Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zurcher

    发明人： Arvind Kamath ,  James Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zurcher

    IPC分类号： H01L21/00 ,  H01L21/311

    CPC分类号： H01L21/316 ,  H01L21/02211 ,  H01L21/02288 ,  H01L21/02318 ,  H01L21/3165 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/66757 ,  H01L29/78621

    摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.

    摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一电介质层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。