公开(公告)号：US20100032690A1

公开(公告)日：2010-02-11

申请号：US12349055

申请日：2009-01-06

申请人： Hui Ching Feng ,  Kuo-Chin Huang ,  Shyi-Ming Pan ,  Hung-Li Pan ,  Yin-Cheng Chu

发明人： Hui Ching Feng ,  Kuo-Chin Huang ,  Shyi-Ming Pan ,  Hung-Li Pan ,  Yin-Cheng Chu

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/14 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The present invention is related to a light emitting device with an insulating layer, which comprises a transparent substrate, a first light emitting unit, a second light emitting unit, an insulating layer and a conducting layer. The first light emitting unit and the second light emitting unit are set up on the transparent substrate, wherein the second light emitting unit has an appearance of a stair structure. The insulating layer is set between the first and the second light emitting units. The conducting layer is on the insulating layer in order to conduct the first and the second light emitting units. Because of the appearance of the stair structure of the second light emitting unit, improving the cladding efficiency of the insulating layer, further improving the insulating efficiency of the insulating layer and avoiding the insulating layer loosing and the leakage between the first and the second light emitting units.

摘要翻译： 本发明涉及具有绝缘层的发光器件，其包括透明衬底，第一发光单元，第二发光单元，绝缘层和导电层。 第一发光单元和第二发光单元设置在透明基板上，其中第二发光单元具有楼梯结构的外观。 绝缘层设置在第一和第二发光单元之间。 导电层位于绝缘层上，以便传导第一和第二发光单元。 由于第二发光单元的楼梯结构的出现，提高绝缘层的包层效率，进一步提高绝缘层的绝缘效率，避免绝缘层松动以及第一和第二发光二极管之间的泄漏 单位。

公开(公告)号：US20070272930A1

公开(公告)日：2007-11-29

申请号：US11308926

申请日：2006-05-26

申请人： Huan-Che Tseng ,  Way-Jze Wen ,  Shyi-Ming Pan

发明人： Huan-Che Tseng ,  Way-Jze Wen ,  Shyi-Ming Pan

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/60 ,  H01L2224/16225

摘要： A light-emitting diode package (LED package) includes a LED and a carrier. The LED includes a substrate, a semiconductor layer, a first electrode and a second electrode. The semiconductor layer is located on a surface of the substrate and has a rough surface. The semiconductor layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer and a light-emitting layer disposed between the two doped semiconductor layers. The first electrode and the second electrode are disposed on and electrically coupled the first-type doped semiconductor layer and the second-type doped semiconductor layer, respectively. The carrier has a rough carrying surface and includes a first contact pad and a second contact pad disposed on the rough carrying surface. The first electrode and the second electrode of the LED face the carrier and are electrically coupled to the first contact pad and a second contact pad, respectively.

摘要翻译： 发光二极管封装（LED封装）包括LED和载体。 LED包括基板，半导体层，第一电极和第二电极。 半导体层位于基板的表面上，具有粗糙的表面。 半导体层包括第一掺杂半导体层，第二掺杂半导体层和设置在两个掺杂半导体层之间的发光层。 第一电极和第二电极分别设置在第一掺杂半导体层和第二掺杂半导体层上并电耦合。 载体具有粗糙的承载表面，并且包括设置在粗糙承载表面上的第一接触焊盘和第二接触焊盘。 LED的第一电极和第二电极面向载体并且分别电耦合到第一接触焊盘和第二接触焊盘。

公开(公告)号：US20070141749A1

公开(公告)日：2007-06-21

申请号：US11311243

申请日：2005-12-20

申请人： Yi-Fong Lin ,  Shyi-Ming Pan ,  Way-Jze Wen ,  Fen-Ren Chen

发明人： Yi-Fong Lin ,  Shyi-Ming Pan ,  Way-Jze Wen ,  Fen-Ren Chen

IPC分类号： H01L21/00

CPC分类号： H01L33/62 ,  H01L24/28 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/00

摘要： A die attachment method for LED chips and the structure thereof are disclosed. While attaching a LED chip to a substrate, surface of two bonding material is ionized by ultrasonic waves so as to make the attachment of a LED chip to a substrate is under low temperature operating condition and having better heat dissipation structure.

摘要翻译： 公开了一种LED芯片的芯片附着方法及其结构。 当将LED芯片附着到基板上时，通过超声波将两个接合材料的表面电离，以使LED芯片与基板的连接处于低温工作状态并具有更好的散热结构。

公开(公告)号：US20060163682A1

公开(公告)日：2006-07-27

申请号：US11041492

申请日：2005-01-22

申请人： Shyi-Ming Pan ,  Fen-Ren Chien

发明人： Shyi-Ming Pan ,  Fen-Ren Chien

IPC分类号： H01L27/14

CPC分类号： H01L31/1035 ,  H01L31/022408 ,  H01L31/105

摘要： An epitaxial structure for semiconducting photo detectors is provided. The epitaxial structure contains a substrate having a built-in electric circuit, a first and second metallic layers on top of said substrate electrically connected to the corresponding electrical input and output points of the substrate's electric circuit, and a semiconducting photo detecting element as the topmost part for receiving incident lights.

摘要翻译： 提供了一种用于半导体光电探测器的外延结构。 外延结构包含具有内置电路的基板，在所述基板的顶部上电连接到基板的电路的对应电输入和输出点的第一和第二金属层，以及作为最上层的半导体光检测元件 部分接收入射灯。

公开(公告)号：US20050145873A1

公开(公告)日：2005-07-07

申请号：US10750784

申请日：2004-01-03

申请人： Shyi-Ming Pan ,  Fen-Ren Chien ,  Lung-Chien Chen

发明人： Shyi-Ming Pan ,  Fen-Ren Chien ,  Lung-Chien Chen

IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/007

摘要： A light-emitting diode device is provided with the following manufacturing method: forming an n-GaN layer on a substrate; growing an SiO2 layer on the n-GaN surface, and using the photo-lithography process to expose the n-GaN within the mesa area; using MOCVD to grow an LED structure in the epitaxy within the mesa area, the formed structure being a p-n coplanar structure due to the selective area characteristic; and finally, forming the electrodes on the structure to complete an LED device. The device can be manufactured without the etching process to form the p-n coplanar structure. In comparison to other conventional manufacturing methods, the method simplifies the manufacturing process, and avoids many problems associated with etching, including non-uniform etching, overly rough surface, etching damages, and current leakage. Furthermore, SiO2 is used as a scattering layer to prevent emitted light from internally reflected, and therefore, improves the external quantum efficiency.

摘要翻译： 一种发光二极管器件具有以下制造方法：在衬底上形成n-GaN层; 在n-GaN表面上生长SiO 2层，并使用光刻工艺在台面区域内露出n-GaN; 使用MOCVD在台面区域内的外延生长LED结构，由于选择区域特性，形成的结构是p-n共面结构; 最后，在结构上形成电极以完成LED器件。 可以在没有蚀刻工艺的情况下制造器件以形成p-n共面结构。 与其他常规制造方法相比，该方法简化了制造工艺，并且避免了与蚀刻相关的许多问题，包括不均匀蚀刻，过度粗糙的表面，蚀刻损伤和电流泄漏。 此外，使用SiO 2作为散射层以防止发射的光从内部反射，因此提高了外部量子效率。

公开(公告)号：US07632693B2

公开(公告)日：2009-12-15

申请号：US12149288

申请日：2008-04-30

申请人： Cheng-Kuo Huang ,  Shyi-Ming Pan ,  Yun-Li Li ,  Huan-Che Tseng ,  Fen-Ren Chien

发明人： Cheng-Kuo Huang ,  Shyi-Ming Pan ,  Yun-Li Li ,  Huan-Che Tseng ,  Fen-Ren Chien

IPC分类号： H01L29/00

CPC分类号： H01L33/22

摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

摘要翻译： 公开了一种多向光散射LED及其制造方法。 金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。 第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。 透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。 第一电极安装在散射层上。 因此，来自LED的光输出在多方向上散射。

公开(公告)号：US20080121907A1

公开(公告)日：2008-05-29

申请号：US11309445

申请日：2006-08-08

申请人： Way-Jze Wen ,  Yi-Fong Lin ,  Huan-Che Tseng ,  Shyi-Ming Pan ,  Fen-Ren Chien ,  Kuo-Ruei Huang ,  Wen-Joe Song

发明人： Way-Jze Wen ,  Yi-Fong Lin ,  Huan-Che Tseng ,  Shyi-Ming Pan ,  Fen-Ren Chien ,  Kuo-Ruei Huang ,  Wen-Joe Song

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/44 ,  H01L2933/0016

摘要： An LED includes a substrate, a first type doping semiconductor layer, a first electrode, a light emitting layer, a second type doping semiconductor layer, a second electrode, a first dielectric layer and a first conductive plug. The first type doping semiconductor layer is formed on the substrate, and the light emitting layer, the second type doping semiconductor layer and the second electrode are formed on a portion of the first type doping semiconductor layer in sequence. The first dielectric layer is formed on another portion of the first type doping semiconductor layer where is not covered by the light emitting layer. The first electrode formed on the first dielectric layer is electrically connected with the first type doping semiconductor layer through the first conductive plug formed in the first dielectric layer. Furthermore, the second electrode is electrically connected with the second type doping semiconductor layer.

摘要翻译： LED包括基板，第一类型掺杂半导体层，第一电极，发光层，第二类型掺杂半导体层，第二电极，第一介电层和第一导电插塞。 在基板上形成第一型掺杂半导体层，依次在第一型掺杂半导体层的一部分上形成发光层，第二型掺杂半导体层和第二电极。 第一介电层形成在第一型掺杂半导体层的未被发光层覆盖的另一部分上。 形成在第一电介质层上的第一电极通过形成在第一介电层中的第一导电插塞与第一型掺杂半导体层电连接。 此外，第二电极与第二类型掺杂半导体层电连接。

公开(公告)号：US20070170596A1

公开(公告)日：2007-07-26

申请号：US11339622

申请日：2006-01-26

申请人： Way-Jze Wen ,  Yi-Fong Lin ,  Shyi-Ming Pan ,  Fen Chien

发明人： Way-Jze Wen ,  Yi-Fong Lin ,  Shyi-Ming Pan ,  Fen Chien

IPC分类号： H01L23/52

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/3025 ,  H01L2924/00014

摘要： A flip-chip light emitting diode with high light-emitting efficiency is disclosed. The LED includes a transparent conductive layer, an oxide layer, a reflective metal layer, a conductive layer, and a protective diffusion layer sequentially disposed over a p-type semiconductor layer. Thereby, light emitting from a light-emitting layer toward the p-type semiconductor layer is reflected and penetrating a transparent substrate and emitting outwards. Thus the problem of light shielded from the flip-chip type LED is solved and the light-emitting efficiency is improved. Furthermore, the present invention disposes the LED chip in a face-down orientation on a conductive substrate by flip-chip technology so as to enhance heat-dissipation efficiency of the LED.

摘要翻译： 公开了一种具有高发光效率的倒装芯片发光二极管。 LED包括依次设置在p型半导体层上的透明导电层，氧化物层，反射金属层，导电层和保护性扩散层。 由此，从发光层朝向p型半导体层发光的光被反射并透过透明基板并向外发射。 因此解决了从倒装型LED遮光的问题，提高了发光效率。 此外，本发明通过倒装芯片技术将LED芯片以面朝下的方式配置在导电基板上，从而提高LED的散热效率。

公开(公告)号：US20060038195A1

公开(公告)日：2006-02-23

申请号：US11254691

申请日：2005-10-21

申请人： Shyi-Ming Pan ,  Jenq-Dar Tsay ,  Ru-Chin Tu ,  Jung-Tsung Hsu

发明人： Shyi-Ming Pan ,  Jenq-Dar Tsay ,  Ru-Chin Tu ,  Jung-Tsung Hsu

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/32

摘要： The specification discloses a light-emitting diode and the corresponding manufacturing method. A GaN thick film with a slant surface is formed on the surface of a substrate. An epitaxial slant surface is naturally formed using the properties of the GaN epitaxy. An LED structure is grown on the GaN thick film to form an LED device. This disclosed method and device can simplify the manufacturing process. The invention further uses the GaN thick film epitaxial property to make various kinds of LED chips with multiple slant surfaces and different structures. Since the surface area for emitting light on the chip increases and the multiple slant surfaces reduce the chances of total internal reflections, the light emission efficiency of the invention is much better than the prior art.

摘要翻译： 该说明书公开了一种发光二极管及相应的制造方法。 在衬底的表面上形成具有倾斜表面的GaN厚膜。 使用GaN外延的性质自然地形成外延倾斜表面。 在GaN厚膜上生长LED结构以形成LED器件。 该公开的方法和装置可以简化制造过程。 本发明进一步使用GaN厚膜外延性制造具有多个倾斜表面和不同结构的各种LED芯片。 由于用于在芯片上发射光的表面积增加并且多个倾斜表面减小了内部反射的机会，所以本发明的发光效率比现有技术好得多。

公开(公告)号：US08263991B2

公开(公告)日：2012-09-11

申请号：US11979963

申请日：2007-11-13

申请人： Kuo-Chin Huang ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Chi-Yang Chuang ,  Fen-Ren Chien

发明人： Kuo-Chin Huang ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Chi-Yang Chuang ,  Fen-Ren Chien

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/40 ,  H01L33/46

摘要： A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.

摘要翻译： 公开了一种发光氮化镓III-V族化合物半导体器件及其制造方法。 发光器件包括衬底，衬底上的n型半导体层，n型半导体层上的有源层，有源层上的p型半导体层，p型半导体层上的导电层 设置在导电层上的第一电极和布置在n型半导体层的暴露部分上的第二电极。 对应于第一电极，在p型半导体层上设置电阻反射层或接触窗，使得电流通过电阻反射层旁边或通过接触窗到有源层产生光。 当光传输到导电层以发射时，其不被第一电极吸收或屏蔽。 因此，电流在导电层上有效地分布。 因此，提高了LED的亮度和效率。 此外，改善了导电层和p型半导体层之间的粘附性，从而可以提高制造工艺期间的金属剥离问题。