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46 条记录 (耗时 0.018 秒)

    METHOD FOR FABRICATING A HIGH-K METAL GATE MOS
    22.
    发明申请
    METHOD FOR FABRICATING A HIGH-K METAL GATE MOS 有权
    制造高K金属栅MOS的方法

    公开(公告)号：US20120164824A1

    公开(公告)日：2012-06-28

    申请号：US13178455

    申请日：2011-07-07

    申请人： LI JIANG ,  Mingqi Li

    发明人： LI JIANG ,  Mingqi Li

    IPC分类号： H01L21/28

    CPC分类号： H01L29/66545 ,  H01L29/78

    摘要： A method is provided for fabricating a high-K metal gate MOS device. The method includes providing a semiconductor substrate having a surface region, a gate oxide layer on the surface region, a sacrificial gate electrode on the gate oxide layer, and a covering layer on the sacrificial gate electrode, an inter-layer dielectric layer on the semiconductor substrate and the sacrificial gate electrode. The method also includes planarizing the inter-layer dielectric layer to expose a portion of the covering layer atop the sacrificial gate electrode, implanting nitrogen ions into the inter-layer dielectric layer until a depth of implantation is deeper than a thickness of the portion of the covering layer atop the sacrificial gate electrode and polishing the inter-layer dielectric layer to expose a surface of the sacrificial gate electrode, removing the sacrificial gate electrode, and depositing a metal gate.

    摘要翻译： 提供了制造高K金属栅极MOS器件的方法。 该方法包括提供具有表面区域，表面区域上的栅极氧化物层，栅极氧化物层上的牺牲栅极电极和牺牲栅电极上的覆盖层的半导体衬底，半导体上的层间电介质层 基板和牺牲栅电极。 该方法还包括平坦化层间电介质层以暴露牺牲栅电极顶部的覆盖层的一部分，将氮离子注入到层间电介质层中，直到植入深度比该部分的厚度更深 覆盖层，并抛光该层间电介质层以暴露牺牲栅电极的表面，去除牺牲栅极电极和沉积金属栅极。

    NOVEL POLYMERS AND PHOTORESIST COMPOSITIONS
    23.
    发明申请
    NOVEL POLYMERS AND PHOTORESIST COMPOSITIONS 审中-公开
    新型聚合物和光电组合物

    公开(公告)号：US20110269074A1

    公开(公告)日：2011-11-03

    申请号：US13077947

    申请日：2011-03-31

    申请人： Emad Aqad ,  Cong Liu ,  Cheng-Bai Xu ,  Mingqi Li

    发明人： Emad Aqad ,  Cong Liu ,  Cheng-Bai Xu ,  Mingqi Li

    IPC分类号： G03F7/20 ,  C08F12/30

    摘要： New polymers are provided comprising (i) one or more covalently linked photoacid generator moieties and (ii) one or more photoacid-labile groups, wherein the one or more photoacid generator moieties are a component of one or more of the photoacid-labile groups. Preferred polymers of the invention are suitable for use in photoresists imaged at short wavelengths such as sub-200 nm, particularly 193 nm.

    摘要翻译： 提供新的聚合物，其包含（i）一种或多种共价连接的光酸产生剂部分和（ii）一种或多种光致酸不稳定基团，其中所述一种或多种光酸产生剂部分是一种或多种光酸不稳定基团的组分。 本发明优选的聚合物适用于在短波长例如亚200nm，特别是193nm下成像的光致抗蚀剂。

    Chemical mechanical polishing device and polishing element
    29.
    发明授权
    Chemical mechanical polishing device and polishing element 有权
    化学机械抛光装置和抛光元件

    公开(公告)号：US08851959B2

    公开(公告)日：2014-10-07

    申请号：US13184907

    申请日：2011-07-18

    申请人： Li Jiang ,  Mingqi Li

    发明人： Li Jiang ,  Mingqi Li

    IPC分类号： B24B7/04 ,  B24B37/04 ,  B24B57/02

    CPC分类号： B24B37/04 ,  B24B57/02

    摘要： A polishing apparatus used in chemical mechanical polishing device is provided. The polishing apparatus includes a polishing plate for holding a wafer to be polished; a polishing pad arm, one end of the polishing pad arm being fixed, another end of the polishing pad arm holding a polishing pad, and the polishing pad arm driving the polishing pad for moving relatively to the wafer; the polishing pad moving relatively to the wafer with drive from the polishing pad arm, and the polishing pad arm ensuring the polishing pad contacting the wafer during movement; and a slurry supply route for supplying polishing slurry between the polishing pad and the wafer during polishing. The present invention also provides a chemical mechanical polishing device. It makes for realizing miniaturization of a chemical mechanical polishing device, saving polishing slurry and improving utilization rate of the polishing pad in the chemical mechanical polishing device to apply the present invention.

    摘要翻译： 提供了一种用于化学机械抛光装置的抛光装置。 抛光装置包括：用于保持要抛光的晶片的抛光板; 抛光垫臂，抛光垫臂的一端固定，抛光垫臂的另一端保持抛光垫，抛光垫臂驱动抛光垫以相对于晶片移动; 所述抛光垫相对于来自所述抛光垫臂的驱动的所述晶片移动;以及所述抛光垫臂，其确保所述抛光垫在运动期间与所述晶片接触; 以及用于在抛光期间在抛光垫和晶片之间提供抛光浆料的浆料供应路线。 本发明还提供一种化学机械抛光装置。 实现化学机械研磨装置的小型化，节省抛光浆料，提高化学机械研磨装置的抛光垫的利用率，从而应用本发明。

    Crane jib transition structure
    30.
    发明授权
    Crane jib transition structure 失效
    起重机臂架过渡结构

    公开(公告)号：US08777026B2

    公开(公告)日：2014-07-15

    申请号：US13318281

    申请日：2011-06-27

    申请人： Fenglin Han ,  Mingqi Li

    发明人： Fenglin Han ,  Mingqi Li

    IPC分类号： B66C23/70

    CPC分类号： B66C23/70

    摘要： Provided is a crane jib transition structure, including a jib section, a transition section and a supporting structure. The jib section matches with the transition section, and they fixedly connect to each other. The upper end of the supporting structure fixedly connects to the upper end of the side of the jib section. The bottom end of the supporting structure fixedly connects to the bottom end of the corresponding side of the transition section. The middle part of the supporting structure fixedly connects to the connection point between the side of jib section and the corresponding side of transition section. Therefore, the crane jib transition structure can not only achieve the strength of a crane jib transition structure, but also achieve the strength and the overall stability of a crane jib, by using the supporting structure connecting to between the crane jib section and transition section.

    摘要翻译： 提供了一种起重机起重臂过渡结构，其包括起重臂部分，过渡部分和支撑结构。 起重部分与过渡部分匹配，并且它们彼此固定连接。 支撑结构的上端固定地连接到起重臂部分侧面的上端。 支撑结构的底端固定地连接到过渡段的相应侧的底端。 支撑结构的中部固定地连接到起重臂侧面和过渡段相应侧面之间的连接点。 因此，起重机起重臂过渡结构不仅可以实现起重机起重臂过渡结构的强度，还可以通过连接起重机吊臂段和过渡段之间的支撑结构，实现起重机吊臂的强度和整体稳定性。