摘要:
It is an object to provide a fluid machine, which is simple in structure and in which lubricating oil containing smaller amount of the working fluid is supplied to sliding portions of an expansion device. The fluid machine has the expansion device for generating a driving force by expansion of the working fluid, which contains the lubricating oil and is heated to a gas phase condition. The fluid machine further has an electric power generating device driven by the driving force of the expansion device and generating electric power. An oil pooling portion is formed in a fluid passage, through which the working fluid discharged from the expansion device flows, such that the lubricating oil contained in the working fluid is brought into contact with at least one of sliding portions of the expansion device and the electric power generating device. And a heating unit is provided to heat the working fluid in the oil pooling portion.
摘要:
A photosensitive resin composition comprising an alkali-soluble resin (A), a compound (B) containing a 1,2-quinonediazide group, and a compound (C) of the following formula (I): ##STR1## wherein each of Ar.sup.1 to Ar.sup.3 which are independent of one another, is an aromatic hydrocarbon group which may be substituted by a halogen atom, a C.sub.1-4 alkyl group or a C.sub.1-4 alkoxy group, and R is a hydrogen atom, a hydroxyl group, a C.sub.1-4 alkyl group or a C.sub.1-4 alkoxy group.
摘要翻译:包含碱溶性树脂(A),含有1,2-醌二叠氮化物的化合物(B)和下式(I)的化合物(C))的光敏树脂组合物:其中各自 彼此独立的Ar 1〜Ar 3为可被卤素原子,C 1-4烷基或C 1-4烷氧基取代的芳香族烃基,R为氢原子,羟基, C 1-4烷基或C 1-4烷氧基。
摘要:
The present invention provides an abrasive treatment technique capable of planarizing at an extremely high rate silicon carbide, which is thermally and chemically extremely stable and for which it is extremely difficult to efficiently perform an abrasive treatment. The present invention is a polishing slurry for silicon carbide wherein the polishing slurry includes a suspension liquid in which the pH thereof is 6.5 or more and manganese dioxide particles are suspended. The polishing slurry for silicon carbide is preferably a suspension in which manganese dioxide particles are suspended in an aqueous solution allowed to have a redox potential falling in a range enabling manganese to be present as manganese dioxide. The redox potential V of the polishing slurry preferably falls within the range specified by the following formula representing a relation between V and pH, pH being a variable: 1.014−0.591 pH≦V≦1.620−0.0743 pH
摘要:
To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor.A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B): (A) an organic acid (B) a nonionic surfactant having an HLB value of from 5 to less than 13.
摘要:
A cleaning solution for cleaning a substrate for semiconductor devices and a cleaning method using the said cleaning solution, which comprises at least the following components (A), (B) and (C): (A) an ethyleneoxide-type surfactant containing a hydrocarbon group which may have a substituent group except for phenyl, and a polyoxyethylene group in which a ratio (m/n) of a number (m) of carbon atoms contained in the hydrocarbon group to a number (n) of oxyethylene groups contained in the polyoxyethylene group is in the range of 1 to 1.5, the number (m) of carbon atoms is not less than 9, and the number (n) of oxyethylene groups is not less than 7; (B) water; and (C) alkali or an organic acid. The cleaning solution highly clean the surface of the substrate without occurrence of corrosion by removing fine particles and organic contaminants which are adhered onto the surface of the substrate.
摘要:
A cooling system includes a compressor that circulates refrigerant; a condenser that condenses the refrigerant; an expansion valve that reduces a pressure of the refrigerant that has been condensed by the condenser; an evaporator that vaporizes the refrigerant that has been reduced in pressure by the expansion valve; a refrigerant passage through which the refrigerant flows from an outlet of the condenser toward an inlet of the expansion valve, and that includes a passage forming portion that forms part of the refrigerant passage; a second passage that is connected in parallel with the passage forming portion; a cooling portion that is provided in the second passage and cools a heat source using the refrigerant; and an expansion valve that is arranged upstream of the cooling portion in the second passage.
摘要:
In a method of manufacturing a metal member, a metal material containing aluminum as a main component is anodized in an anodization solution having a pH of 4 to 10 and containing a nonaqueous solvent having a dielectric constant smaller than that of water and capable of dissolving water, thereby forming a nonporous amorphous aluminum oxide passivation film on a surface of the metal member. The method includes a step of controlling the viscosity of the anodization solution. In the step of controlling the viscosity, the viscosity of the anodization solution is lowered by elevating the temperature of the anodization solution above the room temperature or by adding to the anodization solution a substance having a dielectric constant smaller than that of water and a viscosity lower than that of the nonaqueous solvent.
摘要:
A photoresist composition comprising an alkali-soluble resin (A) and a radiation sensitive compound (B), as main components, which further contains a compound (C) of the following formula (I): ##STR1## wherein each of R.sup.1 to R.sup.4 which are independent of one another, is a hydrophobic substituent or a hydrogen atom, provided that all of R.sup.1 to R.sup.4 are not simultaneously hydrogen atoms, and each of a to d which are independent of one another, is an integer of from 1 to 5, and when any one of R.sup.1 to R.sup.4 is present in a plurality, the plurality of such any one of R.sup.1 to R.sup.4 may be the same or different.