Fluid machine for Rankine cycle
    21.
    发明申请
    Fluid machine for Rankine cycle 有权
    兰金循环流体机

    公开(公告)号:US20070175212A1

    公开(公告)日:2007-08-02

    申请号:US11641202

    申请日:2006-12-18

    摘要: It is an object to provide a fluid machine, which is simple in structure and in which lubricating oil containing smaller amount of the working fluid is supplied to sliding portions of an expansion device. The fluid machine has the expansion device for generating a driving force by expansion of the working fluid, which contains the lubricating oil and is heated to a gas phase condition. The fluid machine further has an electric power generating device driven by the driving force of the expansion device and generating electric power. An oil pooling portion is formed in a fluid passage, through which the working fluid discharged from the expansion device flows, such that the lubricating oil contained in the working fluid is brought into contact with at least one of sliding portions of the expansion device and the electric power generating device. And a heating unit is provided to heat the working fluid in the oil pooling portion.

    摘要翻译: 本发明的目的是提供一种流体机械,其结构简单,并且将含有较少量的工作流体的润滑油供应到膨胀装置的滑动部分。 流体机械具有用于通过膨胀包含润滑油并被加热到气相状态的工作流体产生驱动力的膨胀装置。 流体机械还具有由膨胀装置的驱动力驱动并产生电力的发电装置。 在液体通道中形成有一个集油部分,从膨胀装置排出的工作流体通过该流体通道流动,使得包含在工作流体中的润滑油与膨胀装置的滑动部分和 发电装置。 并且提供加热单元以加热储油部分中的工作流体。

    POLISHING SLURRY FOR SILICON CARBIDE AND POLISHING METHOD THEREFOR
    23.
    发明申请
    POLISHING SLURRY FOR SILICON CARBIDE AND POLISHING METHOD THEREFOR 审中-公开
    碳化硅抛光浆及其抛光方法

    公开(公告)号:US20120240479A1

    公开(公告)日:2012-09-27

    申请号:US13514683

    申请日:2010-11-18

    IPC分类号: C09K3/14 H01L21/304

    摘要: The present invention provides an abrasive treatment technique capable of planarizing at an extremely high rate silicon carbide, which is thermally and chemically extremely stable and for which it is extremely difficult to efficiently perform an abrasive treatment. The present invention is a polishing slurry for silicon carbide wherein the polishing slurry includes a suspension liquid in which the pH thereof is 6.5 or more and manganese dioxide particles are suspended. The polishing slurry for silicon carbide is preferably a suspension in which manganese dioxide particles are suspended in an aqueous solution allowed to have a redox potential falling in a range enabling manganese to be present as manganese dioxide. The redox potential V of the polishing slurry preferably falls within the range specified by the following formula representing a relation between V and pH, pH being a variable: 1.014−0.591 pH≦V≦1.620−0.0743 pH

    摘要翻译: 本发明提供一种能够以极高速率碳化硅平坦化的磨料处理技术,该碳化硅在热和化学上极其稳定,极难有效地进行研磨处理。 本发明是一种用于碳化硅的抛光浆料,其中抛光浆料包括其pH为6.5以上的悬浮液和二氧化锰颗粒悬浮。 用于碳化硅的抛光浆料优选是其中二氧化锰颗粒悬浮在允许氧化还原电位落在使锰以二氧化锰存在的范围内的水溶液中的悬浮液。 抛光浆料的氧化还原电位V优选落在由下式表示的范围内,表示V和pH之间的关系,pH是可变的:1.014-0.591 pH&NlE; V< IL; 1.620-0.0743 pH

    CLEANING SOLUTION FOR SUBSTRATE FOR SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR DEVICE
    24.
    发明申请
    CLEANING SOLUTION FOR SUBSTRATE FOR SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR DEVICE 有权
    用于半导体器件的衬底的清洁溶液和用于生产用于半导体器件的衬底的工艺

    公开(公告)号:US20100167972A1

    公开(公告)日:2010-07-01

    申请号:US12600545

    申请日:2008-05-16

    IPC分类号: C11D3/20

    摘要: To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor.A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B): (A) an organic acid (B) a nonionic surfactant having an HLB value of from 5 to less than 13.

    摘要翻译: 为了提供一种用于半导体器件用基板的清洗液,其具有除去颗粒,有机污染物,金属污染物以及附着在基板表面上的有机物和金属的复合污染物的能力优异,从而基板表面可以是高度的 清洁,不被腐蚀。 特别是提供一种清洁液,该清洗溶液清洁低介电常数(Low-k)材料的能力优异,其中由于疏水性而容易排斥液体并且其中去除颗粒的能力差。 一种半导体器件用基板用清洗液,其特征在于,含有以下成分(A)和(B):(A)有机酸(B)HLB值为5〜13以下的非离子性表面活性剂。

    Cleaning solution for cleaning substrate for semiconductor devices and cleaning method using the same
    25.
    发明申请
    Cleaning solution for cleaning substrate for semiconductor devices and cleaning method using the same 有权
    用于半导体器件的清洁用基板的清洗液及使用其的清洗方法

    公开(公告)号:US20080011321A1

    公开(公告)日:2008-01-17

    申请号:US11898233

    申请日:2007-09-11

    IPC分类号: B08B6/00 C11D7/32

    摘要: A cleaning solution for cleaning a substrate for semiconductor devices and a cleaning method using the said cleaning solution, which comprises at least the following components (A), (B) and (C): (A) an ethyleneoxide-type surfactant containing a hydrocarbon group which may have a substituent group except for phenyl, and a polyoxyethylene group in which a ratio (m/n) of a number (m) of carbon atoms contained in the hydrocarbon group to a number (n) of oxyethylene groups contained in the polyoxyethylene group is in the range of 1 to 1.5, the number (m) of carbon atoms is not less than 9, and the number (n) of oxyethylene groups is not less than 7; (B) water; and (C) alkali or an organic acid. The cleaning solution highly clean the surface of the substrate without occurrence of corrosion by removing fine particles and organic contaminants which are adhered onto the surface of the substrate.

    摘要翻译: 一种用于清洁半导体器件用基板的清洗液和使用上述清洗液的清洗方法,其至少包括以下成分(A),(B)和(C):(A)含有烃的环氧乙烷型表面活性剂 可以具有除苯基以外的取代基的基团,以及其中烃基中所含的(m)个碳原子数(m)与(甲) 聚氧乙烯基的范围为1〜1.5,碳原子数(m)为9以上,氧化乙烯基的数(n)为7以上。 (B)水; 和(C)碱或有机酸。 清洁溶液通过除去附着在基材表面上的细小颗粒和有机污染物,高度清洁基板的表面而不会发生腐蚀。

    VEHICLE COOLING SYSTEM
    26.
    发明申请
    VEHICLE COOLING SYSTEM 审中-公开
    车辆冷却系统

    公开(公告)号:US20130319038A1

    公开(公告)日:2013-12-05

    申请号:US14000311

    申请日:2012-02-21

    IPC分类号: F25B1/00

    摘要: A cooling system includes a compressor that circulates refrigerant; a condenser that condenses the refrigerant; an expansion valve that reduces a pressure of the refrigerant that has been condensed by the condenser; an evaporator that vaporizes the refrigerant that has been reduced in pressure by the expansion valve; a refrigerant passage through which the refrigerant flows from an outlet of the condenser toward an inlet of the expansion valve, and that includes a passage forming portion that forms part of the refrigerant passage; a second passage that is connected in parallel with the passage forming portion; a cooling portion that is provided in the second passage and cools a heat source using the refrigerant; and an expansion valve that is arranged upstream of the cooling portion in the second passage.

    摘要翻译: 冷却系统包括使制冷剂循环的压缩机; 冷凝器冷凝制冷剂; 膨胀阀,其减小由冷凝器冷凝的制冷剂的压力; 使通过膨胀阀减压的制冷剂蒸发的蒸发器; 制冷剂通道,制冷剂从冷凝器的出口朝向膨胀阀的入口流动,并且包括形成部分制冷剂通道的通道形成部分; 与通道形成部分并联连接的第二通道; 冷却部,其设置在所述第二通路中,并使用所述制冷剂冷却热源; 以及布置在第二通道中的冷却部分的上游的膨胀阀。

    Metal member having a metal oxide film and method of manufacturing the same
    27.
    发明授权
    Metal member having a metal oxide film and method of manufacturing the same 有权
    具有金属氧化物膜的金属构件及其制造方法

    公开(公告)号:US08282807B2

    公开(公告)日:2012-10-09

    申请号:US11966417

    申请日:2007-12-28

    IPC分类号: C25D11/06 C25D11/18

    CPC分类号: C25D11/06 C25D11/18 C25D21/12

    摘要: In a method of manufacturing a metal member, a metal material containing aluminum as a main component is anodized in an anodization solution having a pH of 4 to 10 and containing a nonaqueous solvent having a dielectric constant smaller than that of water and capable of dissolving water, thereby forming a nonporous amorphous aluminum oxide passivation film on a surface of the metal member. The method includes a step of controlling the viscosity of the anodization solution. In the step of controlling the viscosity, the viscosity of the anodization solution is lowered by elevating the temperature of the anodization solution above the room temperature or by adding to the anodization solution a substance having a dielectric constant smaller than that of water and a viscosity lower than that of the nonaqueous solvent.

    摘要翻译: 在制造金属构件的方法中,以pH为4〜10的阳极氧化液阳极氧化含有铝作为主要成分的金属材料,并且含有比水的介电常数小的能够溶解水的非水溶剂 从而在金属构件的表面上形成无孔非晶态氧化铝钝化膜。 该方法包括控制阳极氧化溶液的粘度的步骤。 在控制粘度的步骤中,通过将阳极氧化溶液的温度升高到室温以上,阳极氧化溶液的粘度降低,或者通过向阳极氧化溶液中添加介电常数小于水的介电常数物质和较低的粘度的物质 比非水溶剂高。

    Photoresist composition
    28.
    发明授权
    Photoresist composition 失效
    光刻胶组成

    公开(公告)号:US5759736A

    公开(公告)日:1998-06-02

    申请号:US829959

    申请日:1997-04-01

    IPC分类号: G03F7/022 G03F7/023

    CPC分类号: G03F7/0226

    摘要: A photoresist composition comprising an alkali-soluble resin (A) and a radiation sensitive compound (B), as main components, which further contains a compound (C) of the following formula (I): ##STR1## wherein each of R.sup.1 to R.sup.4 which are independent of one another, is a hydrophobic substituent or a hydrogen atom, provided that all of R.sup.1 to R.sup.4 are not simultaneously hydrogen atoms, and each of a to d which are independent of one another, is an integer of from 1 to 5, and when any one of R.sup.1 to R.sup.4 is present in a plurality, the plurality of such any one of R.sup.1 to R.sup.4 may be the same or different.

    摘要翻译: (I)的化合物(C),作为主要成分的含有碱溶性树脂(A)和辐射敏感性化合物(B)的光致抗蚀剂组合物:其中, R 1〜R 4彼此独立的是疏水性取代基或氢原子,条件是所有的R 1至R 4不是同时为氢原子,并且彼此独立的a至d中的每一个为 1至5,并且当R 1至R 4中的任何一个存在多个时,R 1至R 4中的任何一个可以相同或不同。