公开(公告)号：US5614444A

公开(公告)日：1997-03-25

申请号：US469164

申请日：1995-06-06

申请人： Janos Farkas ,  Rahul Jairath ,  Matt Stell ,  Sing-Mo Tzeng

发明人： Janos Farkas ,  Rahul Jairath ,  Matt Stell ,  Sing-Mo Tzeng

IPC分类号： H01L21/3105 ,  H01L21/3213 ,  H01L21/302

CPC分类号： H01L21/3105 ,  H01L21/3213

摘要： A method of using additives with silica-based slurries to enhance metal selectivity in polishing metallic materials utilizing a chemical-mechanical polishing (CMP) process. Additives are used with silica-based slurries to passivate a dielectric surface, such as a silicon dioxide (SiO.sub.2) surface, of a semiconductor wafer so that dielectric removal rate is reduced when CMP is applied. The additive is comprised of at least a polar component and an apolar component. The additive interacts with the surface silanol group of the SiO.sub.2 surface to inhibit particles of the silica-based slurry from interacting with hydroxyl molecules of the surface silanol group. By applying a surface passivation layer on the SiO.sub.2 surface, erosion of the SiO.sub.2 surface is reduced. However, the metallic surface is not influenced significantly by the additive, so that the selectivity of metal removal over oxide removal is enhanced.

摘要翻译： 使用具有二氧化硅基浆料的添加剂的方法，以通过化学机械抛光（CMP）工艺来提高金属材料抛光的金属选择性。 添加剂与二氧化硅基浆料一起使用以钝化半导体晶片的电介质表面，例如二氧化硅（SiO 2）表面，使得当施加CMP时电介质去除速率降低。 添加剂由至少极性组分和非极性组分组成。 该添加剂与SiO 2表面的表面硅烷醇基团相互作用，以抑制二氧化硅基浆料的颗粒与表面硅烷醇基团的羟基分子相互作用。 通过在SiO 2表面上施加表面钝化层，降低了SiO 2表面的侵蚀。 然而，金属表面不会被添加剂显着影响，从而提高了金属去除对氧化物去除的选择性。

公开(公告)号：US5478435A

公开(公告)日：1995-12-26

申请号：US356987

申请日：1994-12-16

申请人： James J. Murphy ,  Janos Farkas ,  Lucia C. Markert ,  Rahul Jairath

发明人： James J. Murphy ,  Janos Farkas ,  Lucia C. Markert ,  Rahul Jairath

IPC分类号： B01F3/12 ,  B01F5/04 ,  H01L21/00

CPC分类号： H01L21/6715 ,  B01F5/0403 ,  B01F2003/1257 ,  B01F2215/0045

摘要： A point of use slurry dispensing system with controls for dilution, temperature and oxidizer/etchant/additive infusion. A slurry in unmixed form and a diluting agent are independently pumped to a pad on a CMP tool. Liquid heaters are used to heat the slurry and the diluting agent to a desirable temperature. The actual mixing occurs at the point of use on the pad or in a dispensing line just prior to the point of use. In some instances a third independent distribution line is used to dispense an oxidizer, etchant and/or chemical additive at or near the point of use.

摘要翻译： 一种使用的浆料分配系统，其具有用于稀释，温度和氧化剂/蚀刻剂/添加剂输注的对照。 将未混合的浆料和稀释剂独立地泵送到CMP工具上的垫上。 液体加热器用于将浆料和稀释剂加热至所需温度。 在使用点之前，实际的混合发生在垫上或使用点处。 在一些情况下，使用第三独立分配线来在使用点处或附近分配氧化剂，蚀刻剂和/或化学添加剂。

公开(公告)号：US08061185B2

公开(公告)日：2011-11-22

申请号：US12091693

申请日：2005-10-25

申请人： Philippe Monnoyer ,  Janos Farkas ,  Farid Sebaai

发明人： Philippe Monnoyer ,  Janos Farkas ,  Farid Sebaai

IPC分类号： G01N29/04 ,  G01N29/28

CPC分类号： C09G1/02 ,  G01N15/04 ,  G01N29/032 ,  G01N2291/02416

摘要： A method for forming a semiconductor device, the method includes providing a semiconductor substrate, applying a slurry to the semiconductor substrate, wherein the slurry was tested using a testing method includes taking a first undiluted sample from a top of the slurry; determining a first particle size distribution characteristic of the first undiluted sample; taking a second undiluted sample from a bottom of the slurry; determining a second particle size distribution characteristic of the second undiluted sample; and comparing a difference between the first particle size distribution characteristic and the second particle size distribution characteristics with a first predetermined value.

摘要翻译： 一种形成半导体器件的方法，所述方法包括提供半导体衬底，向半导体衬底施加浆料，其中使用测试方法测试所述浆料，包括从所述浆料的顶部取出第一未稀释的样品; 确定第一未稀释样品的第一粒度分布特性; 从浆料的底部取出第二个未稀释的样品; 确定第二未稀释样品的第二粒度分布特征; 以及将第一粒度分布特性和第二粒度分布特性之间的差与第一预定值进行比较。

公开(公告)号：US07951729B2

公开(公告)日：2011-05-31

申请号：US12705038

申请日：2010-02-12

申请人： Janos Farkas ,  Srdjan Kordic ,  Cindy Goldberg

发明人： Janos Farkas ,  Srdjan Kordic ,  Cindy Goldberg

IPC分类号： H01L21/31 ,  H01L23/58

CPC分类号： H01L21/3105 ,  C04B35/5603 ,  C04B35/565 ,  C04B2235/483 ,  C08G77/60 ,  C08L83/16 ,  C09D183/16 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/288 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76838

摘要： A passivating coupling material for, on the one hand, passivating a dielectric layer in a semiconductor device, and on the other hand, for permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. In a particular example, the dielectric layer may be a porous material having a desirably decreased dielectric constant k, and the passivating coupling material provides steric shielding groups that substantially block the adsorption and uptake of ambient moisture into the porous dielectric layer. The passivating coupling materials also provides metal nucleation sides for promoting the deposition of a metal thereon in liquid phase, in comparison with metal deposition without the presence of the passivating coupling material. The use of a liquid phase metal deposition process facilitates the subsequent manufacture of the semiconductor device. In one example, the passivating coupling material has multiple Si atoms in its chemical composition, which desirably increases the thermal stability of the material.

摘要翻译： 一种钝化耦合材料，一方面使半导体器件中的电介质层钝化，另一方面，用于在随后的工艺步骤中允许或至少促进液相金属沉积。 在具体实例中，电介质层可以是具有理想的降低介电常数k的多孔材料，并且钝化耦合材料提供空间屏蔽基团，其基本上阻止环境水分吸附和吸收到多孔介电层中。 与金属沉积相比，钝化耦合材料还提供金属成核侧，用于促进金属沉积在液相中，而不存在钝化偶联材料。 使用液相金属沉积工艺有助于随后的半导体器件的制造。 在一个实例中，钝化偶联材料在其化学组成中具有多个Si原子，这有利地增加了材料的热稳定性。

公开(公告)号：US20110021024A1

公开(公告)日：2011-01-27

申请号：US12934277

申请日：2008-04-11

申请人： Maria Luisa Calvo-Munoz ,  Janos Farkas

发明人： Maria Luisa Calvo-Munoz ,  Janos Farkas

IPC分类号： H01L21/44 ,  C23C16/00 ,  C23C16/52

CPC分类号： H01L21/02074 ,  H01L21/321 ,  H01L21/76877 ,  H01L21/76883

摘要： The present invention provides a process for forming a capping layer on a conducting interconnect for a semiconductor device, the process comprising: providing a substrate comprising one or more conductors in a dielectric layer, the conductors having an oxide layer at their surface; exposing the surface of the substrate to a vapour of β-diketone or a β-ketoimine; and depositing a capping layer on the surface of at least some of the one or more conductors. The present invention further provides an apparatus for carrying out this method.

摘要翻译： 本发明提供了一种用于在半导体器件的导电互连上形成覆盖层的方法，该方法包括：提供包括在介电层中的一个或多个导体的基底，所述导体在其表面具有氧化物层; 将基材的表面暴露于二 - 二酮或α-酮亚胺的蒸气; 以及在所述一个或多个导体中的至少一些导体的表面上沉积覆盖层。 本发明还提供一种用于执行该方法的装置。

公开(公告)号：US20100177641A1

公开(公告)日：2010-07-15

申请号：US12525713

申请日：2007-02-08

申请人： Janos Farkas ,  Wei Zhao

发明人： Janos Farkas ,  Wei Zhao

IPC分类号： H04L12/26

CPC分类号： H04L41/0677 ,  H04L45/48

摘要： A method of localising a fault in a network is disclosed. The network comprises nodes (SW1 . . . SW4) links, and edge-nodes (EN1 . . . EN4) arranged as a plurality of spanning trees (T1, T2,T3), the spanning trees being partially disjoint. The network further comprises means for network management. The method comprising the steps of receiving information on the configuration of the plurality of tree topologies in the network; monitoring connectivity in the network; upon detection of a loss of connectivity in the network, identifying the failed tree(s), and determining the network elements common to the failed tree(s).

摘要翻译： 公开了一种在网络中定位故障的方法。 网络包括布置为多个生成树（T1，T2，T3）的节点（SW1 ... SW4）链接和边缘节点（EN1 ... EN4），生成树是部分不相交的。 网络还包括用于网络管理的装置。 该方法包括以下步骤：接收关于网络中的多个树形拓扑结构的信息; 监控网络中的连通性; 在检测到网络中的连接丢失时，识别故障树，以及确定故障树共有的网络元件。

公开(公告)号：US07674725B2

公开(公告)日：2010-03-09

申请号：US11914878

申请日：2005-05-25

申请人： Janos Farkas ,  Sebastien Petitdidier

发明人： Janos Farkas ,  Sebastien Petitdidier

IPC分类号： H01L21/31

CPC分类号： H01L21/3212 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/67034 ,  Y10S438/906

摘要： A treatment solution for a semiconductor wafer comprising water, a passivating reagent and a surfactant. The treatment solution is either mixed with a cleaning fluid, a rinsing fluid or a drying vapor, and is used in a cleaning apparatus employing a Marangoni dryer.

摘要翻译： 一种用于包含水，钝化剂和表面活性剂的半导体晶片的处理溶液。 处理溶液与清洁液，漂洗液或干燥蒸气混合，并用于采用Marangoni干燥器的清洁装置中。

公开(公告)号：US20080287041A1

公开(公告)日：2008-11-20

申请号：US12093113

申请日：2005-11-08

申请人： Srdjan Kordic ,  Sebastien Petitdidier ,  Janos Farkas ,  Silvio Del Monaco

发明人： Srdjan Kordic ,  Sebastien Petitdidier ,  Janos Farkas ,  Silvio Del Monaco

IPC分类号： B24B7/00

CPC分类号： B23H5/08 ,  B24B53/001 ,  B24B53/017 ,  C25F1/00

摘要： A system for removing particles from a polishing pad to improve the efficiency of the removal of material by the polishing pad as part of a chemical-mechanical polishing process, the system comprising a polishing pad; a fluid dispenser arranged to dispense a fluid on the polishing pad; and removal means, wherein the removal means include a heater for increasing the temperature of the fluid dispensed on the polishing pad, and/or voltage means for coupling the polishing pad to a voltage source for repelling charged particles from the polishing pad surface while the fluid dispenser is dispensing the fluid on the polishing pad.

摘要翻译： 一种用于从抛光垫去除颗粒以提高抛光垫作为化学机械抛光工艺的一部分去除材料的效率的系统，该系统包括抛光垫; 流体分配器，布置成在抛光垫上分配流体; 和去除装置，其中所述去除装置包括用于增加分配在抛光垫上的流体的温度的加热器和/或用于将抛光垫耦合到电压源的电压装置，用于从抛光垫表面排斥带电粒子，同时流体 分配器在抛光垫上分配流体。

公开(公告)号：US20080242110A1

公开(公告)日：2008-10-02

申请号：US12065190

申请日：2005-09-01

申请人： Janos Farkas ,  Lynne Michaelson ,  Srdjan Kordic

发明人： Janos Farkas ,  Lynne Michaelson ,  Srdjan Kordic

IPC分类号： H01L21/469

CPC分类号： H01L21/02074 ,  H01L21/288 ,  H01L21/3105 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76849

摘要： A process for the formation of a capping layer on a conducting interconnect for a semiconductor device is provided, the process comprising the steps of: (a) providing one or more conductors in a dielectric layer, and (b) depositing a capping layer on an upper surface of at least some of the one or more conductors, characterised in that the process further includes: (c) the step of, prior to depositing the capping layer, reacting the dielectric layer with an organic compound in a liquid phase, the said organic compound having the following general formula: (I) where X is a functional group, R is an organic group or a organosiloxane group, Y1 is either a functional group or an organic group or organosiloxane group, and Y2 is either a functional group or an organic group or organosiloxane group, and where the functional group(s) is/are independently selected from the following: NH2, a secondary amine, a tertiary amine, acetamide, trifluoroacetamide, imidazole, urea, OH, an alkyoxy, acryloxy, acetate, SH, an alkylthiol, sulfonate, methanosulfonate, and cyanide, and salts thereof.

摘要翻译： 提供了一种用于在半导体器件的导电互连上形成覆盖层的工艺，该方法包括以下步骤：（a）在电介质层中提供一个或多个导体，以及（b）将覆盖层沉积在 所述一个或多个导体中的至少一些的上表面，其特征在于，所述方法还包括：（c）在沉积覆盖层之前使介电层与液相中的有机化合物反应的步骤，所述 具有以下通式的有机化合物：（I）其中X是官能团，R是有机基团或有机硅氧烷基团，Y1是官能团或有机基团或有机硅氧烷基团，Y2是官能团或 有机基团或有机硅氧烷基团，并且其中官能团独立地选自以下：NH 2，仲胺，叔胺，乙酰胺，三氟乙酰胺，咪唑，脲，OH，烷氧基，丙烯酸 xy，乙酸酯，SH，烷基硫醇，磺酸酯，甲磺酸酯和氰化物，及其盐。

公开(公告)号：US20080221004A1

公开(公告)日：2008-09-11

申请号：US11914870

申请日：2005-05-25

申请人： Janos Farkas

发明人： Janos Farkas

IPC分类号： C11D7/00

CPC分类号： H01L21/02052 ,  C11D1/722 ,  C11D3/044 ,  C11D3/3947 ,  C11D11/0023 ,  C11D11/0047

摘要： A cleaning solution for a semiconductor wafer comprises ammonia, hydrogen peroxide, a complexing agent and a block copolymer surfactant diluted in water. The cleaning solution can be used in single wafer cleaning tools to remove both particulate contaminants and metallic residues.

摘要翻译： 用于半导体晶片的清洁溶液包括氨，过氧化氢，络合剂和在水中稀释的嵌段共聚物表面活性剂。 清洁溶液可用于单晶圆清洁工具，以去除颗粒污染物和金属残留物。