公开(公告)号：US20050250273A1

公开(公告)日：2005-11-10

申请号：US11180658

申请日：2005-07-14

申请人： Yuichi Harano ,  Jun Gotoh ,  Toshiki Kaneko ,  Masanao Yamamoto

发明人： Yuichi Harano ,  Jun Gotoh ,  Toshiki Kaneko ,  Masanao Yamamoto

IPC分类号： G02F1/1368 ,  G09F9/30 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L21/77 ,  H01L23/52 ,  H01L29/417 ,  H01L29/45 ,  H01L29/786

CPC分类号： H01L21/28568 ,  G03G15/0131 ,  G03G15/1685 ,  G03G2215/0141 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78603

摘要： The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.

公开(公告)号：US06903793B2

公开(公告)日：2005-06-07

申请号：US10936021

申请日：2004-09-07

申请人： Toshiki Kaneko ,  Kazumi Fujii ,  Kikuo Ono

发明人： Toshiki Kaneko ,  Kazumi Fujii ,  Kikuo Ono

IPC分类号： G09F9/30 ,  G02F1/133 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368

CPC分类号： G02F1/134363 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2203/01

摘要： An interconnecting structure and a pixel structure suited to large-sized screens are formed. A counter line/electrode is formed on a TFT substrate, and the counter line/electrode is made of a stacked structure film in which a layer made of aluminum or an alloy essentially containing aluminum is covered with a high-melting point metal film, and a transparent conductive film which covers the stacked structure film.

摘要翻译： 形成适合于大尺寸屏幕的互连结构和像素结构。 反向线/电极形成在TFT基板上，对向线/电极由叠层结构膜制成，其中由铝或基本上含有铝的合金构成的层被高熔点金属膜覆盖，并且 覆盖层叠结构膜的透明导电膜。

公开(公告)号：US4651172A

公开(公告)日：1987-03-17

申请号：US801950

申请日：1985-11-26

申请人： Ryuji Watanabe ,  Tetsuro Minemura ,  Tetsuo Ito ,  Hisashi Ando ,  Yoshihito Maeda ,  Masaichi Nagai ,  Seiki Shimizu ,  Kiyoshi Konno ,  Toshiki Kaneko

发明人： Ryuji Watanabe ,  Tetsuro Minemura ,  Tetsuo Ito ,  Hisashi Ando ,  Yoshihito Maeda ,  Masaichi Nagai ,  Seiki Shimizu ,  Kiyoshi Konno ,  Toshiki Kaneko

IPC分类号： G11B7/24 ,  G11B7/2403 ,  G11B7/243 ,  G11B7/253 ,  G11B7/2531 ,  G11B7/2533 ,  G11B7/257 ,  G01D15/34 ,  B05D1/36 ,  G03C1/00

CPC分类号： G11B7/252 ,  G11B7/2403 ,  G11B7/243 ,  G11B7/257 ,  G11B2007/24304 ,  G11B2007/24308 ,  G11B2007/25706 ,  G11B2007/25715 ,  G11B7/00454 ,  G11B7/2531 ,  G11B7/2533 ,  Y10S428/913 ,  Y10S430/146

摘要： In an information recording medium having a recording layer for recording information by heating through incoming energy, at least one of an interference layer and an absorption layer for the incoming energy is provided on the energy-incoming side of the recording layer to reduce the reflected energy from the information recording medium and increase the quantity of heat input into the recording layer. The temperature of the recording layer is rapidly enhanced, and rapid writing is made possible thereby. Writing or erasing can be made with less incoming energy, and thus the writing sensitivity or erasing sensitivity of the information recording medium can be increased.

摘要翻译： 在具有用于通过进入能量加热来记录信息的记录层的信息记录介质中，在记录层的能量入射侧提供用于输入能量的干涉层和吸收层中的至少一个，以减少反射能量 并且增加输入到记录层中的热量。 记录层的温度迅速提高，从而可以进行快速写入。 可以以更少的入射能量进行写入或擦除，从而可以增加信息记录介质的写入灵敏度或擦除灵敏度。

公开(公告)号：US08730560B2

公开(公告)日：2014-05-20

申请号：US13252536

申请日：2011-10-04

申请人： Daisuke Sonoda ,  Tetsuya Nagata ,  Masataka Okamoto ,  Yasukazu Kimura ,  Toshio Miyazawa ,  Toshiki Kaneko ,  Hidekazu Nitta

发明人： Daisuke Sonoda ,  Tetsuya Nagata ,  Masataka Okamoto ,  Yasukazu Kimura ,  Toshio Miyazawa ,  Toshiki Kaneko ,  Hidekazu Nitta

IPC分类号： G02B26/00 ,  G09G3/34

CPC分类号： G02F1/167 ,  G02F2001/1676

摘要： A pixel is formed by sealing an insulating liquid and floating particles in an area defined by a first substrate, a second substrate and partitions. The width of the partition has to be reduced in order to improve the pixel brightness by enlarging a flat electrode. In this case, the height of the partition has to be reduced for retaining the mechanical strength. If the height of the partition is reduced, an area of the partition electrode becomes small, thus failing to retain the memory effect. The planar surface of the partition is then formed into a zigzag shape so as to increase the area of the partition electrode.

摘要翻译： 通过在由第一基板，第二基板和隔板限定的区域中密封绝缘液体和浮动颗粒来形成像素。 必须减小分隔件的宽度，以便通过放大扁平电极来提高像素的亮度。 在这种情况下，为了保持机械强度，必须减小隔板的高度。 如果隔板的高度减小，则分隔电极的面积变小，因此不能保持记忆效果。 然后将隔板的平面形成为锯齿形，以增加分隔电极的面积。

公开(公告)号：US20090086148A1

公开(公告)日：2009-04-02

申请号：US12329182

申请日：2008-12-05

申请人： Hideshi Nomura ,  Yasuko Gotoh ,  Toshiki Kaneko ,  Kenta Kamoshida

发明人： Hideshi Nomura ,  Yasuko Gotoh ,  Toshiki Kaneko ,  Kenta Kamoshida

IPC分类号： G02F1/1343 ,  H01L33/00

CPC分类号： G02F1/13458 ,  G02F1/1345 ,  G02F1/136227

摘要： An active matrix liquid crystal display device includes a plurality of gate signal lines and a plurality of drain signal lines formed on a substrate. The gate signal lines extend in parallel to one another, and the drain signal lines extend in parallel to one another, and a dummy line is formed between each of adjacent parallel extending drain signal lines.

摘要翻译： 有源矩阵液晶显示装置包括形成在基板上的多个栅极信号线和多个漏极信号线。 栅极信号线彼此并联延伸，并且漏极信号线彼此平行地延伸，并且在每个相邻的平行延伸的漏极信号线之间形成虚拟线。

公开(公告)号：US07479451B2

公开(公告)日：2009-01-20

申请号：US11180658

申请日：2005-07-14

申请人： Yuichi Harano ,  Jun Gotoh ,  Toshiki Kaneko ,  Masanao Yamamoto

发明人： Yuichi Harano ,  Jun Gotoh ,  Toshiki Kaneko ,  Masanao Yamamoto

IPC分类号： H01L21/44

CPC分类号： H01L21/28568 ,  G03G15/0131 ,  G03G15/1685 ,  G03G2215/0141 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78603

摘要： The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.

摘要翻译： 本发明防止了在与低温多晶硅接触的源/漏电极中使用铝基导电层时，在加热步骤中铝元素扩散到多晶硅层中，从而可以发生不良显示 消除了 在源/漏电极中使用铝基导电层，并且在铝基导电层和多晶硅层之间形成由钼制成的阻挡层或钼合金层。 此外，在构成阻挡层的钼或钼合金的表面上形成在氮气氛中通过快速热处理（快速热退火）形成的氧化钼氮化物膜。

公开(公告)号：US20050206825A1

公开(公告)日：2005-09-22

申请号：US11139164

申请日：2005-05-26

申请人： Toshiki Kaneko ,  Kazumi Fujii ,  Kikuo Ono

发明人： Toshiki Kaneko ,  Kazumi Fujii ,  Kikuo Ono

IPC分类号： G09F9/30 ,  G02F1/133 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368

CPC分类号： G02F1/134363 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2203/01

摘要： An interconnecting structure and a pixel structure suited to large-sized screens are formed. A counter line/electrode is formed on a TFT substrate, and the counter line/electrode is made of a stacked structure film in which a layer made of aluminum or an alloy essentially containing aluminum is covered with a high-melting point metal film, and a transparent conductive film which covers the stacked structure film.

摘要翻译： 形成适合于大尺寸屏幕的互连结构和像素结构。 反向线/电极形成在TFT基板上，对向线/电极由叠层结构膜制成，其中由铝或基本上含有铝的合金构成的层被高熔点金属膜覆盖，并且 覆盖层叠结构膜的透明导电膜。

公开(公告)号：US06522370B2

公开(公告)日：2003-02-18

申请号：US09811553

申请日：2001-03-20

申请人： Takuya Takahashi ,  Masahiro Ishii ,  Tsutomu Kasai ,  Tetsuya Kawamura ,  Katsumi Tamura ,  Toshiki Kaneko ,  Kenichi Onisawa

发明人： Takuya Takahashi ,  Masahiro Ishii ,  Tsutomu Kasai ,  Tetsuya Kawamura ,  Katsumi Tamura ,  Toshiki Kaneko ,  Kenichi Onisawa

IPC分类号： G02F1136

CPC分类号： G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295

摘要： A liquid crystal display unit is used that has data lines made of a molybdenum-alloyed film having a chromium content from 2 wt. % or more, but up to 5 wt. %, or a molybdenum-alloyed film lamination (Mo—Cr) consisting of a first electroconductive film and a second electroconductive film, with the first electroconductive film having a chromium content from 2 wt. % or more, but up to 5 wt. % and the second electroconductive film being provided above the first electroconductive film and containing less chromium than the first electroconductive film does. The use of the data lines composed of these materials enables the following requirements to be satisfied: high dry-etching resistance, low resistance, low ACF contact resistance, low side etching rates, forward tapered wiring cross-sectional shape, and up to two lamination layers.

公开(公告)号：US06512270B2

公开(公告)日：2003-01-28

申请号：US09931761

申请日：2001-08-20

申请人： Takeshi Satou ,  Takuya Takahashi ,  Tomoya Katou ,  Toshiki Kaneko ,  Hajime Ikeda

发明人： Takeshi Satou ,  Takuya Takahashi ,  Tomoya Katou ,  Toshiki Kaneko ,  Hajime Ikeda

IPC分类号： H01L2701

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78621

摘要： A polycrystalline Si thin film transistor substrate having a self-aligned LDD and provided with a gate made of a Mo—W alloy having a W concentration not lower than 5% by weight and lower than 25% by weight and preferably a W concentration of 17 to 22% by weight, which is formed by a process comprising a wet-etching step using an etching solution having a phosphoric acid concentration of 60% to 70% by weight, has uniform characteristic properties and is excellent in productivity.

公开(公告)号：US06392721B1

公开(公告)日：2002-05-21

申请号：US09411254

申请日：1999-10-04

申请人： Takahiro Ochiai ,  Toshiki Kaneko ,  Takuya Takahashi ,  Kazumi Fujii

发明人： Takahiro Ochiai ,  Toshiki Kaneko ,  Takuya Takahashi ,  Kazumi Fujii

IPC分类号： G02F1136

CPC分类号： G02F1/136286 ,  G02F2001/13629

摘要： A liquid crystal display device has good contact characteristics between an etched side end portion of a lower layer wiring line and an insulating film and the like, satisfactory step coverage, and satisfactory adhesion to a substrate so that disconnection of an upper layer wiring line and short-circuiting of the lower layer wiring line can be prevented to improve reliability. The liquid crystal display device comprises a wiring line having a laminated structure including a first layer which is made from a first metal layer formed over an insulating substrate and a second layer which is made from a second metal layer different from the first metal layer and is formed over the first metal layer, and the side end face of the first layer has a right-tapered shape with a taper angle of 60° or less, while the side end face of the second layer is approximately perpendicular to or counter-tapered with respect to the insulating substrate. The second layer has a thickness not greater than ½ of that of the first layer.

摘要翻译： 液晶显示装置在下层布线的蚀刻侧端部与绝缘膜之间具有良好的接触特性，令人满意的台阶覆盖率以及对基板的良好的粘附性，从而使上层布线和短路 可以防止下层布线的电路提高可靠性。 液晶显示装置包括具有叠层结构的布线，该层叠结构包括由绝缘基板上形成的第一金属层制成的第一层和由与第一金属层不同的第二金属层制成的第二层，并且是第 形成在所述第一金属层上，并且所述第一层的侧端面具有锥形角为60°以下的右锥形形状，而所述第二层的侧端面大致垂直于或相对锥度 相对于绝缘基板。 第二层的厚度不大于第一层的厚度的1/2。