Fixation structure for connector of in-vehicle controller
    21.
    发明授权
    Fixation structure for connector of in-vehicle controller 有权
    车载控制器连接器固定结构

    公开(公告)号:US08102654B2

    公开(公告)日:2012-01-24

    申请号:US12752553

    申请日:2010-04-01

    CPC classification number: H01R12/7047

    Abstract: A connector fixation structure includes: a connector having a rectangular connector body, protrusions protruding from facing sides in a wing like manner, and a terminal embedded in and protruding from the connector body; a heat sink having a plate shape body, a through hole and columnar convexities; and a printed board. The bottom of the connector is inserted into the through hole of the heat sink. Each columnar convexity is disposed on the plate shape body at a predetermined position corresponding to the protrusion. The top of the connector contacts a first surface of the printed board, and each columnar convexity is fixed to the printed board via the corresponding protrusion with a first screw.

    Abstract translation: 连接器固定结构包括:具有矩形连接器主体的连接器,以类似方式从面对侧突出的突起,以及嵌入并从连接器主体突出的端子; 具有板状体,通孔和柱状凸部的散热器; 和印刷电路板。 连接器的底部插入散热片的通孔中。 每个柱状凸起在对应于突起的预定位置处设置在板状体上。 连接器的顶部接触印刷电路板的第一表面,并且每个柱状凸起通过具有第一螺钉的相应凸起固定到印刷电路板上。

    Interconnection structure of semiconductor device
    22.
    发明授权
    Interconnection structure of semiconductor device 失效
    半导体器件的互连结构

    公开(公告)号:US07489040B2

    公开(公告)日:2009-02-10

    申请号:US11635495

    申请日:2006-12-08

    Abstract: An interconnection is provided with a dummy interconnection connected to an interconnection body, and the dummy interconnection is provided with a stress concentration portion in which tensile stress higher than that of the interconnection body is generated. In proximity to the stress concentration portion, an insulating film formed by high-density plasma CVD is provided, and the tensile stress is generated in the stress concentration portion by the insulating film. With this structure, the occurrence of a void can be prevented at any position in the interconnection body.

    Abstract translation: 互连设置有连接到互连体的虚拟互连,并且虚设互连设置有应力集中部,其中产生比互连体高的拉伸应力。 在应力集中部分附近,设置通过高密度等离子体CVD形成的绝缘膜,并且通过绝缘膜在应力集中部分产生拉伸应力。 利用这种结构,可以防止在互连体中的任何位置发生空隙。

    Electronic-circuit analysis program, method, and apparatus
    23.
    发明申请
    Electronic-circuit analysis program, method, and apparatus 有权
    电子电路分析程序,方法和装置

    公开(公告)号:US20070006104A1

    公开(公告)日:2007-01-04

    申请号:US11259273

    申请日:2005-10-27

    Inventor: Hiroyuki Kawata

    CPC classification number: G06F17/5036

    Abstract: A design-change-target-circuit detecting unit inputs circuit information including an element model describing an electronic circuit to detect an electronic circuit using a changed element model. A determining unit compares a characteristic of an element model before change and that of the element model after change. An analysis-necessity deciding unit decides whether waveform analysis is necessary, and when determining that waveform analysis is necessary, makes an instruction for waveform analysis of the electronic circuit using the element model after change. Furthermore, after the determination-necessity deciding unit determines that waveform analysis of the electronic circuit using the element model after change is not necessary and design requirement conditions of the electronic circuit including the element model after change are changed from those before change, an instruction for pass/fail determination as to whether existing waveform analysis results satisfy the design requirement conditions after change is made to cause the instruction to be executed.

    Abstract translation: 设计改变目标电路检测单元输入包括描述电子电路的元件模型的电路信息,以使用改变的元件模型检测电子电路。 确定单元将变化之前的元素模型的特性与变化后的元素模型的特征进行比较。 分析必要性决定单元决定是否需要波形分析,并且当确定需要波形分析时,使用改变后的元件模型进行电子电路的波形分析指令。 此外,在确定必要性判定单元确定不需要改变之后使用元素模型的电子电路的波形分析,并且包括在改变之后包括元素模型的电子电路的设计要求条件从改变之前改变的指令, 关于现有波形分析结果是否满足设计要求条件的通过/失败确定,进行更改以使指令执行。

    Switching device for controlling large amount of current

    公开(公告)号:US07081691B2

    公开(公告)日:2006-07-25

    申请号:US10396399

    申请日:2003-03-26

    Inventor: Hiroyuki Kawata

    Abstract: A switching device for controlling a large amount of current includes a circuit board carrying electronic components thereon, a power-switching element electrically connected to the circuit board, and a housing disposed underneath the circuit board and containing the power-switching element therein. The housing made of a heat-conductive material includes a heat-sink block having a sloped surface on which the power-switching element is mounted. Connecting leads extending from the power-switching element are positioned at an upper portion of the sloped surface which is close to the circuit board. In this manner, the length of connecting leads is shortened and heat and noises generated therein are suppressed.

    Method of manufacturing semiconductor device
    26.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US06544904B1

    公开(公告)日:2003-04-08

    申请号:US10157882

    申请日:2002-05-31

    Abstract: A method of manufacturing a semiconductor device is provided, which prevents a polyimide film from coming unstuck from a film to be subjected to isotropic etching, and further prevents deposits adhered to respective side faces of the films from coming off, during a heat treatment for imidizing the polyimide film. Isotropic etching is performed on a silicon nitride film 4 using, as a mask, a polyimide film 5 having a predetermined pattern formed therein. Next, a heat treatment is carried out to imidize the polyimide film 5 prior to performing anisotropic etching on a silicon oxide film 3. During the heat treatment for imidizing the polyimide film 5, since deposits, which are to be generated by anisotropic etching, are not yet adhered to the respective side faces of the films, the polyimide film 5 does not come unstuck from the silicon nitride film 4. Further, the deposits which are adhered to the respective side face of the films after the heat treatment will not come off.

    Abstract translation: 提供一种制造半导体器件的方法,其防止聚酰亚胺膜从薄膜脱落以进行各向同性蚀刻,并且进一步防止在用于酰亚胺化的热处理期间粘附到膜的各个侧面的沉积物脱落 聚酰亚胺薄膜。 在氮化硅膜4上进行各向同性蚀刻,使用形成有预定图案的聚酰亚胺膜5作为掩模。 接下来,在对氧化硅膜3进行各向异性蚀刻之前,进行热处理以对聚酰亚胺膜5进行酰亚胺化。在酰亚胺化聚酰亚胺膜5的热处理中,由于通过各向异性蚀刻产生的沉积物为 还没有粘附到膜的各个侧面,聚酰亚胺膜5不会从氮化硅膜4脱落。此外,附着在热处理后的膜的相应侧面的沉积物将不会脱落 。

    MOTOR DRIVE APPARATUS
    30.
    发明申请
    MOTOR DRIVE APPARATUS 有权
    电机驱动装置

    公开(公告)号:US20120286712A1

    公开(公告)日:2012-11-15

    申请号:US13462873

    申请日:2012-05-03

    CPC classification number: H02K11/0073 B62D5/0406 H02K11/33

    Abstract: In a motor drive apparatus for driving a three-phase AC motor, a first mounting part of a heat sink is formed along an end. A second mounting part is formed in a direction perpendicular to the first mounting part and includes a first column part and a second column part. Three motor relay FETs are mounted on the first mounting part. Six inverter FETs and two power relay FETs are mounted on the second mounting part. Leads of the FETs are electrically connected to an electric circuit substrate. Heat generated by the FETs is radiated to the heat sink through an insulating and heat radiating sheet. By thus arranging the FETs, the motor drive apparatus is reduced in size.

    Abstract translation: 在用于驱动三相交流电动机的电机驱动装置中,散热器的第一安装部分沿着端部形成。 第二安装部分形成在垂直于第一安装部分的方向上,并且包括第一柱部分和第二柱部分。 三个马达继电器FET安装在第一安装部件上。 六个逆变器FET和两个功率继电器FET安装在第二安装部分上。 FET的引线电连接到电路基板。 由FET产生的热量通过绝热散热板辐射到散热片。 通过这样布置FET,电动机驱动装置的尺寸减小。

Patent Agency Ranking