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公开(公告)号:US20190378555A1
公开(公告)日:2019-12-12
申请号:US16550809
申请日:2019-08-26
Applicant: International Business Machines Corporation
Inventor: Jin Ping Han , Xiao Sun , Teng Yang
IPC: G11C11/22 , H03K19/177
Abstract: Word lines intersect bit lines at a plurality of cross points where a plurality of single memory transistor synapse cells are located. Each cell includes a memory transistor; a pulse shaping unit coupled to a given one of a plurality of signal lines and a gate of the memory transistor; a logic gate having inputs coupled to a corresponding one of the word lines and a corresponding one of the bit lines, and an output coupled to the pulse shaping unit; and a pass gate arrangement. The latter is coupled to the memory transistor, the corresponding one of the word lines, the corresponding one of the bit lines, and the output of the logic gate. Pulses are applied to the gate of the memory transistor for weight adjustment during update and to interconnect the memory transistor to the corresponding one of the bit lines during inference.
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公开(公告)号:US20190221559A1
公开(公告)日:2019-07-18
申请号:US16360690
申请日:2019-03-21
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor: Jin-Ping Han , Yulong Li , Dennis M. Newns , Paul M. Solomon , Xiao Sun
IPC: H01L27/06 , H01L27/1159 , H01L21/28 , H01L27/11507
CPC classification number: H01L27/0629 , H01L27/11507 , H01L27/1159 , H01L29/0649 , H01L29/40111 , H01L29/4966 , H01L29/516
Abstract: A metal-insulator-metal (MIM) capacitor structure includes source and drain regions formed within a semiconductor substrate, a first conducting layer formed over the source and drain regions, and a dielectric layer formed over the first conducting layer. The MIM capacitor structure further includes a second conducting layer formed over the dielectric layer, and a sidewall dielectric formed adjacent the first conducting layer and the dielectric layer. An electric field is created indirectly through the sidewall dielectric to an adjacent field effect transistor (FET) channel in the semiconductor substrate.
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公开(公告)号:US20190096462A1
公开(公告)日:2019-03-28
申请号:US15717023
申请日:2017-09-27
Applicant: International Business Machines Corporation
Inventor: Jin Ping Han , Xiao Sun , Teng Yang
IPC: G11C11/22 , H03K19/177
CPC classification number: G11C11/223 , G11C11/2255 , G11C11/2257 , G11C11/2259 , G11C11/2275 , G11C11/54 , G11C11/5621 , G11C11/5628 , G11C11/5657 , G11C11/5671 , G11C16/04 , G11C16/08 , G11C16/10 , H03K19/1776
Abstract: Word lines intersect bit lines at a plurality of cross points where a plurality of single memory transistor synapse cells are located. Each cell includes a memory transistor; a pulse shaping unit coupled to a given one of a plurality of signal lines and a gate of the memory transistor; a logic gate having inputs coupled to a corresponding one of the word lines and a corresponding one of the bit lines, and an output coupled to the pulse shaping unit; and a pass gate arrangement. The latter is coupled to the memory transistor, the corresponding one of the word lines, the corresponding one of the bit lines, and the output of the logic gate. Pulses are applied to the gate of the memory transistor for weight adjustment during update and to interconnect the memory transistor to the corresponding one of the bit lines during inference.
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公开(公告)号:US20180012123A1
公开(公告)日:2018-01-11
申请号:US15202729
申请日:2016-07-06
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor: Jin P. Han , Xiao Sun
IPC: G06N3/063 , H01L27/092 , G06N3/04 , H01L29/10 , H01L29/78
CPC classification number: H01L29/1033 , G06N3/049 , G06N3/0635 , H01L27/092 , H01L27/24
Abstract: A synapse network device includes an array of field effect transistor (FET) devices having controllable channel resistance. Pre-neurons are coupled to the array to provide input pulses to the array on first terminals of the FET devices. Post-neurons are coupled to the array to receive outputs from the array on second terminals of the FET devices and provide feedback to the array on third terminals of the FET devices, wherein a state of the FET devices is indicated based upon signals applied to the FET devices.
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公开(公告)号:US20250077804A1
公开(公告)日:2025-03-06
申请号:US18458141
申请日:2023-08-29
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor: Ankur Agrawal , Andrea Fasoli , Monodeep Kar , Kyu-hyoun Kim , Sergey Rylov , Chia-Yu Chen , Xiao Sun
IPC: G06G7/32
Abstract: A first circuit is configured to split a first integer value into a first coarse value and a first fine value, and split a second integer value into a second coarse value and a second fine value. A second circuit performs an analog multiply and accumulate (MAC) operation on the first and second coarse values to produce a first analog output, perform an analog MAC operation on the first coarse value and the second fine value to produce a second analog output, perform an analog MAC operation on the first fine value and the second coarse value to produce a third analog output, and perform an analog MAC operation on the first and second fine values together to produce a fourth analog output. A third circuit is configured to perform analog-to-digital (A/D) conversion on and combine the analog output signals to produce a reconstructed digital output signal.
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公开(公告)号:US11574694B2
公开(公告)日:2023-02-07
申请号:US16157848
申请日:2018-10-11
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor: Effendi Leobandung , Tayfun Gokmen , Xiao Sun , Yulong Li , Malte Rasch
Abstract: A method for multiple copies of a set of multi-kernel set operations in a hardware accelerated neural network includes a word line for receiving a pixel value of an input image. A bit line communicates a modified pixel value. An analog memory cell including a first capacitor stores a first kernel weight of a first kernel in one of a plurality of kernel sets such that the pixel value is operated on by the first kernel weight to produce the modified pixel value. A charge connection connects the first capacitor to at least a second capacitor storing a second kernel weight of a related kernel of a second one of the plurality of kernel sets such that charge is shared between the first capacitor and at least the second capacitor to normalize the first kernel weight and the second kernel weight.
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公开(公告)号:US11494655B2
公开(公告)日:2022-11-08
申请号:US15836098
申请日:2017-12-08
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor: Xiao Sun , Youngseok Kim , Chun-Chen Yeh
Abstract: A computer-implemented method for training a random matrix network is presented. The method includes initializing a random matrix, inputting a plurality of first vectors into the random matrix, and outputting a plurality of second vectors from the random matrix to be fed back into the random matrix for training. The random matrix can include a plurality of two-terminal devices or a plurality of three-terminal devices or a film-based device.
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公开(公告)号:US11244999B2
公开(公告)日:2022-02-08
申请号:US16502783
申请日:2019-07-03
Applicant: International Business Machines Corporation
Inventor: Martin M. Frank , Takashi Ando , Xiao Sun , Jin Ping Han , Vijay Narayanan
IPC: H01L49/02 , H01L27/11507 , H01L21/3213 , H01L21/02 , H01L21/283 , H01B3/10
Abstract: Artificial synaptic devices with an HfO2-based ferroelectric layer that can be implemented in the CMOS back-end are provided. In one aspect, an artificial synapse element is provided. The artificial synapse element includes: a bottom electrode; a ferroelectric layer disposed on the bottom electrode, wherein the ferroelectric layer includes an HfO2-based material that crystallizes in a ferroelectric phase at a temperature of less than or equal to about 400° C.; and a top electrode disposed on the bottom electrode. An artificial synaptic device including the present artificial synapse element and methods for formation thereof are also provided.
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公开(公告)号:US20210064372A1
公开(公告)日:2021-03-04
申请号:US16558536
申请日:2019-09-03
Applicant: International Business Machines Corporation
Inventor: Xiao Sun , Chia-Yu Chen , Naigang Wang , Jungwook Choi , Kailash Gopalakrishnan
Abstract: An apparatus includes a memory and a processor coupled to the memory. The processor includes first and second sets of arithmetic units having first and second precision for floating-point computations, the second precision being lower than the first precision. The processor is configured to obtain a machine learning model trained in the first precision, to utilize the second set of arithmetic units to perform inference on input data, to utilize the first set of arithmetic units to generate feedback for updating parameters of the second set of arithmetic units based on the inference performed on the input data by the second set of arithmetic units, to tune parameters of the second set of arithmetic units based at least in part on the feedback generated by the first set of arithmetic units, and to utilize the second set of arithmetic units with the tuned parameters to generate inference results.
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公开(公告)号:US20210019116A1
公开(公告)日:2021-01-21
申请号:US16515174
申请日:2019-07-18
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor: Xiao Sun , Ankur Agrawal , Kailash Gopalakrishnan , Silvia Melitta Mueller , Kerstin Claudia Schelm
Abstract: A computer-implemented method for performing an exponential calculation using only two fully-pipelined instructions in a floating point unit that includes. The method includes computing an intermediate value y′ by multiplying an input operand with a predetermined constant value. The input operand is received in floating point representation. The method further includes computing an exponential result for the input operand by executing a fused instruction. The fused instructions includes converting the intermediate value y′ to an integer representation z represented by v most significant bits (MSB), and w least significant bits (LSB). The fused instruction further includes determining exponent bits of the exponential result based on the v MSB from the integer representation z. The method further includes determining mantissa bits of the exponential result according to a piece-wise linear mapping function using a predetermined number of segments based on the w LSB from the integer representation z.
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