公开(公告)号：US20180294210A1

公开(公告)日：2018-10-11

申请号：US15949533

申请日：2018-04-10

Applicant: Infineon Technologies AG

Inventor： Manfred Schindler ,  Franz-Peter Kalz ,  Volker Strutz

IPC: H01L23/495 ,  H01L23/31 ,  H01L25/16 ,  H01L21/48 ,  H01L23/00 ,  H01L23/492 ,  H01L43/04

CPC classification number: H01L23/49586 ,  H01L21/4825 ,  H01L23/3121 ,  H01L23/4924 ,  H01L23/49517 ,  H01L23/49541 ,  H01L23/49582 ,  H01L23/49589 ,  H01L23/562 ,  H01L24/13 ,  H01L24/16 ,  H01L25/16 ,  H01L43/04 ,  H01L2224/13101 ,  H01L2224/16245 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A package and method of making a package. In one example, the package includes an at least partially electrically conductive carrier, a passive component mounted on the carrier, and an at least partially electrically conductive connection structure electrically connecting the carrier with the component and comprising spacer particles configured for spacing the carrier with regard to the component.

公开(公告)号：US20170352638A1

公开(公告)日：2017-12-07

申请号：US15682747

申请日：2017-08-22

Applicant: Infineon Technologies AG

Inventor： Volker Strutz ,  Rainer Markus Schaller ,  Franz-Peter Kalz

IPC: H01L23/00 ,  H01L27/22

CPC classification number: H01L24/29 ,  G01R33/0052 ,  H01L23/49503 ,  H01L23/49506 ,  H01L23/4951 ,  H01L23/49513 ,  H01L23/49548 ,  H01L23/60 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L27/22 ,  H01L2224/2929 ,  H01L2224/29393 ,  H01L2224/29499 ,  H01L2224/29561 ,  H01L2224/2957 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/85986 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/30101 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2924/00

Abstract: A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 101 Ω·cm and 1010 Ω·cm.

公开(公告)号：US09728493B2

公开(公告)日：2017-08-08

申请号：US14839013

申请日：2015-08-28

Applicant: Infineon Technologies AG

Inventor： Volker Strutz ,  Rainer Schaller

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/495 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L23/49541 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49582 ,  H01L23/49586 ,  H01L2224/32245 ,  H01L2924/181 ,  H01L2924/00012

Abstract: A semiconductor device package includes a leadframe and a semiconductor chip mounted to the leadframe. The semiconductor device package further includes a molded encapsulant configured to cast-in-place the leadframe. A surface area of the leadframe remains exposed by the encapsulant. An electrically insulating covering layer extends over a part of the surface area and is configured to divide the surface area in at least two zones.

公开(公告)号：US20170148981A1

公开(公告)日：2017-05-25

申请号：US15427905

申请日：2017-02-08

Applicant: Infineon Technologies AG

Inventor： Carsten von Koblinski ,  Volker Strutz ,  Manfred Engelhardt

IPC: H01L43/14 ,  H01L27/12 ,  H01L23/00 ,  H01L43/04 ,  H01L43/06 ,  H01L23/31 ,  H01L21/84 ,  H01L27/22

CPC classification number: H01L43/14 ,  H01L21/78 ,  H01L21/84 ,  H01L23/3121 ,  H01L23/3171 ,  H01L23/3178 ,  H01L23/3185 ,  H01L24/06 ,  H01L27/12 ,  H01L27/22 ,  H01L43/04 ,  H01L43/065 ,  H01L43/12 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In one embodiment, a method of forming a current sensor device includes forming a device region comprising a magnetic sensor within and/or over a semiconductor substrate. The device region is formed adjacent a front side of the semiconductor substrate. The back side of the semiconductor substrate is attached over an insulating substrate, where the back side is opposite the front side. Sidewalls of the semiconductor substrate are exposed by dicing the semiconductor substrate from the front side without completely dicing the insulating substrate. An isolation liner is formed over all of the exposed sidewalls of the semiconductor substrate. The isolation liner and the insulating substrate include a different material. The method further includes separating the insulating substrate to form diced chips, removing at least a portion of the isolation liner from over a top surface of the device region, and forming contacts over the top surface of the device region.

公开(公告)号：US09553208B2

公开(公告)日：2017-01-24

申请号：US14027710

申请日：2013-09-16

Applicant: Infineon Technologies AG

Inventor： Gottfried Beer ,  Volker Strutz ,  Horst Theuss

IPC: H01L29/82 ,  G01R19/00 ,  G01R33/00 ,  H01L21/56 ,  H01L23/29 ,  H01L23/528

CPC classification number: H01L29/82 ,  G01R15/207 ,  G01R19/0092 ,  G01R33/0047 ,  G01R33/0052 ,  H01L21/561 ,  H01L21/568 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/528 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/19 ,  H01L2224/24137 ,  H01L2224/24195 ,  H01L2924/19105

Abstract: A current sensor device for sensing a measuring current includes a semiconductor chip having a magnetic field sensitive element. The current sensor device further includes an encapsulant embedding the semiconductor chip. A conductor configured to carry the measuring current is electrically insulated from the magnetic field sensitive element. A redistribution structure includes a first metal layer having a first structured portion which forms part of the conductor.

Abstract translation: 用于感测测量电流的电流传感器装置包括具有磁场敏感元件的半导体芯片。 电流传感器装置还包括嵌入半导体芯片的密封剂。 构造成承载测量电流的导体与磁场敏感元件电绝缘。 再分布结构包括具有形成导体的一部分的第一结构化部分的第一金属层。

公开(公告)号：US09504143B2

公开(公告)日：2016-11-22

申请号：US13869570

申请日：2013-04-24

Applicant: Infineon Technologies AG

Inventor： Wolfgang Scherr ,  Volker Strutz

IPC: G01R31/02 ,  H05K1/02 ,  H05K3/28

CPC classification number: H05K1/0268 ,  G01R31/025 ,  H01L2224/05553 ,  H01L2224/48091 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/19107 ,  H05K1/0256 ,  H05K1/0263 ,  H05K3/284 ,  H05K2201/09063 ,  H05K2201/10151 ,  H01L2924/00014

Abstract: An electrical circuit includes a first circuit part and a second circuit part. A first electrical potential is applicable to the first circuit part, wherein a second electrical potential is applicable to the second circuit part. The two circuit parts are galvanically isolated from each other by an insulator, wherein the insulator includes a conducting portion. This conducting portion can be safely sensed by an additional circuitry, to detect if a full or partial contact to the first electrical potential or the second electrical potential has occurred due to a voltage shift or a current flow on the conducting portion, which is itself insulated. This sensing circuitry can incorporate protection elements to clamp voltages and limit currents to prevent destruction of connected circuitries in case of a fail of the insulation.

Abstract translation: 电路包括第一电路部分和第二电路部分。 第一电位可应用于第一电路部分，其中第二电位可应用于第二电路部分。 两个电路部分通过绝缘体彼此电隔离，其中绝缘体包括导电部分。 该导电部分可以被附加的电路安全地感测，以检测是否由于导电部分上的电压偏移或电流而导致与第一电位或第二电位的全部或部分接触，其本身是绝缘的 。 该感测电路可以包含保护元件来钳位电压并限制电流，以防止在绝缘失败的情况下破坏连接的电路。

公开(公告)号：US20140320147A1

公开(公告)日：2014-10-30

申请号：US13869570

申请日：2013-04-24

Applicant: Infineon Technologies AG

Inventor： Wolfgang Scherr ,  Volker Strutz

IPC: H05K1/02 ,  G01R31/02

CPC classification number: H05K1/0268 ,  G01R31/025 ,  H01L2224/05553 ,  H01L2224/48091 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/19107 ,  H05K1/0256 ,  H05K1/0263 ,  H05K3/284 ,  H05K2201/09063 ,  H05K2201/10151 ,  H01L2924/00014

Abstract: An electrical circuit includes a first circuit part and a second circuit part. A first electrical potential is applicable to the first circuit part, wherein a second electrical potential is applicable to the second circuit part. The two circuit parts are galvanically isolated from each other by an insulator, wherein the insulator includes a conducting portion. This conducting portion can be safely sensed by an additional circuitry, to detect if a full or partial contact to the first electrical potential or the second electrical potential has occurred due to a voltage shift or a current flow on the conducting portion, which is itself insulated. This sensing circuitry can incorporate protection elements to clamp voltages and limit currents to prevent destruction of connected circuitries in case of a fail of the insulation.

Abstract translation: 电路包括第一电路部分和第二电路部分。 第一电位可应用于第一电路部分，其中第二电位可应用于第二电路部分。 两个电路部分通过绝缘体彼此电隔离，其中绝缘体包括导电部分。 该导电部分可以被附加的电路安全地感测，以检测是否由于导电部分上的电压偏移或电流而导致与第一电位或第二电位的全部或部分接触，其本身是绝缘的 。 该感测电路可以包含保护元件来钳位电压并限制电流，以防止在绝缘失败的情况下破坏连接的电路。

公开(公告)号：US08860153B2

公开(公告)日：2014-10-14

申请号：US13691293

申请日：2012-11-30

Applicant: Infineon Technologies AG

Inventor： Udo Ausserlechner ,  Volker Strutz

IPC: H01L27/14 ,  H01L29/82 ,  H01L29/84 ,  H01L25/16 ,  H01L21/50

CPC classification number: H01L25/16 ,  G01R15/207 ,  H01L21/50 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/552 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In accordance with an embodiment of the present invention, a semiconductor package includes a current rail comprising a first contact area and a second contact area, a first groove and a second groove, and a magnetic field generating portion. Along a current flow direction, the first groove is disposed between the first contact area and the magnetic field generating portion and the second groove is disposed between the magnetic field generating portion and the second contact area. The thickness of the current rail at the first groove is smaller than the thickness of the current rail at the first contact area.

Abstract translation: 根据本发明的实施例，半导体封装包括包括第一接触区域和第二接触区域的电流轨道，第一凹槽和第二凹槽以及磁场产生部分。 沿着电流流动方向，第一凹槽设置在第一接触区域和磁场产生部分之间，第二凹槽设置在磁场产生部分和第二接触区域之间。 第一沟槽处的电流轨道的厚度小于第一接触区域处的电流轨道的厚度。

公开(公告)号：US20140266269A1

公开(公告)日：2014-09-18

申请号：US13832277

申请日：2013-03-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Udo Ausserlechner ,  Volker Strutz

IPC: G01R19/00

CPC classification number: G01R19/00 ,  G01R1/203 ,  G01R19/0092 ,  H02M2001/0009

Abstract: A multiple current sensor device or a multiple current shunt device includes at least two resistive sections comprising a first resistive section and a second resistive section, at least two connecting sections comprising a first connecting section and a second connecting section and a common connecting section. The first resistive section is electrically coupled in between the first connecting section and the common connecting section. The second resistive section is electrically coupled in between the second connecting section and the common connecting section. Using an embodiment may improve a trade-off between an efficient integration, a compact integration, a compact implementation and an accurate determination of at least one value indicative of at least one of multiple currents.

Abstract translation: 多电流传感器装置或多电流分路装置包括至少两个包括第一电阻部分和第二电阻部分的电阻部分，至少两个连接部分，包括第一连接部分和第二连接部分以及公共连接部分。 第一电阻部分电耦合在第一连接部分和公共连接部分之间。 第二电阻部分电耦合在第二连接部分和公共连接部分之间。 使用实施例可以改善有效集成，紧凑集成，紧凑实现以及精确确定指示多个电流中的至少一个的至少一个值的权衡。

公开(公告)号：US20140167192A1

公开(公告)日：2014-06-19

申请号：US14188112

申请日：2014-02-24

Applicant: Infineon Technologies AG

Inventor： Carsten von Koblinski ,  Volker Strutz ,  Manfred Engelhardt

IPC: H01L43/04 ,  H01L43/14

CPC classification number: H01L43/14 ,  H01L21/78 ,  H01L21/84 ,  H01L23/3121 ,  H01L23/3171 ,  H01L23/3178 ,  H01L23/3185 ,  H01L24/06 ,  H01L27/12 ,  H01L27/22 ,  H01L43/04 ,  H01L43/065 ,  H01L43/12 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate.

Abstract translation: 在一个实施例中，半导体器件包括玻璃衬底，设置在玻璃衬底上的半导体衬底和设置在半导体衬底内和/或之上的磁传感器。