公开(公告)号：US20220130683A1

公开(公告)日：2022-04-28

申请号：US17109101

申请日：2020-12-01

Applicant: InnoLux Corporation

Inventor： Cheng-Chi WANG ,  Yeong-E CHEN ,  Cheng-En CHENG

IPC: H01L21/48 ,  H01L21/66

Abstract: The present disclosure discloses a method for manufacturing an electronic device, including: setting a basic working area; providing a supporting platform having a plurality of vacuum valves; disposing a substrate on the supporting platform; applying vacuum attraction to a portion of the substrate through a portion of the plurality of vacuum valves, wherein the portion of the substrate corresponding to the vacuum attraction is defined as an attracted region; and performing an exposure on a portion of the attracted region, wherein an area of the attracted region is larger than the basic working area and smaller than an area of the supporting platform.

公开(公告)号：US20180026374A1

公开(公告)日：2018-01-25

申请号：US15657345

申请日：2017-07-24

Applicant: InnoLux Corporation

Inventor： Huei-Ying CHEN ,  I-Yin LI ,  Chia-Chi HO ,  Hsu-Kuan HSU ,  Ker-Yih KAO ,  Chung-Kuang WEI ,  Chin-Lung TING ,  Cheng-Chi WANG ,  Chien-Hsing LEE

IPC: H01Q9/06 ,  H01Q9/04 ,  H01Q1/38

Abstract: An antenna device includes a first dielectric substrate, a first radiator disposed on the first dielectric substrate, a second dielectric substrate disposed on the first radiator, a second radiator disposed between the first dielectric substrate and the second dielectric substrate, a main radiator, disposed on the second dielectric substrate, and a modulation structure located between a first radiation portion of the first radiator and a second radiation portion of the second radiator. The first radiation portion, the modulation structure, and the second radiation portion are located in a central area.

公开(公告)号：US20240243108A1

公开(公告)日：2024-07-18

申请号：US18401894

申请日：2024-01-02

Applicant: InnoLux Corporation

Inventor： Jui-Jen YUEH ,  Kuan-Feng LEE ,  Jia-Yuan CHEN ,  Cheng-Chi WANG

IPC: H01L25/075 ,  H01L23/00 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L33/54 ,  H01L33/60 ,  H01L24/13 ,  H01L24/16 ,  H01L33/62 ,  H01L2224/13105 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13166 ,  H01L2224/16227 ,  H01L2924/12041 ,  H01L2933/005 ,  H01L2933/0066

Abstract: An electronic device is provided. The electronic device includes a substrate, a plurality of light-emitting elements, and a protective layer. The substrate includes a connecting element. The plurality of light-emitting elements is disposed on the substrate. The protective layer is disposed on the substrate and includes an opaque layer and a transparent layer. The opaque layer has a plurality of openings. At least a portion of the transparent layer is disposed in the openings and covers the respective light-emitting elements. The protective layer surrounds the connecting element.

公开(公告)号：US20240162185A1

公开(公告)日：2024-05-16

申请号：US18088609

申请日：2022-12-25

Applicant: InnoLux Corporation

Inventor： Chin-Ming HUANG ,  Cheng-Chi WANG ,  Kuan-Hsueh LIN

IPC: H01L23/00 ,  H01L23/31

CPC classification number: H01L24/81 ,  H01L23/3128 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/13082 ,  H01L2224/13105 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16227 ,  H01L2224/81385

Abstract: An electronic device including a circuit structure, a bonding element and an electronic unit is disclosed. The circuit structure includes a conductive pad, and the conductive pad has an accommodating recess. At least a portion of the bonding element is disposed in the accommodating recess. The electronic unit is electrically connected to the conductive pad through the bonding element. The accommodating recess has a bottom surface and an opening opposite to the bottom surface, and a width of the bottom surface is greater than a width of the opening.

公开(公告)号：US20240145370A1

公开(公告)日：2024-05-02

申请号：US18083561

申请日：2022-12-18

Applicant: InnoLux Corporation

Inventor： Te-Hsun LIN ,  Wen-Hsiang LIAO ,  Ming-Hsien SHIH ,  Yung-Feng CHEN ,  Cheng-Chi WANG

IPC: H01L23/498 ,  H01L23/00

CPC classification number: H01L23/49838 ,  H01L23/49816 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15311

Abstract: A semiconductor device includes a first region and a second region, and the second region surrounds the first region. The semiconductor device includes at least one electronic unit, a redistribution structure, a plurality of first pads, and a plurality of second pads. The redistribution structure may be electrically connected to at least one electronic unit. A plurality of first pads are arranged on the redistribution structure and correspondingly to the first region. There is a first pitch between two adjacent first pads. A plurality of second pads are arranged on the redistribution structure and correspondingly to the second region. There is a second pitch between two adjacent second pads, so that the first pitch is smaller than the second pitch.

公开(公告)号：US20230402393A1

公开(公告)日：2023-12-14

申请号：US17819117

申请日：2022-08-11

Applicant: InnoLux Corporation

Inventor： Cheng-Chi WANG ,  Chin-Ming HUANG ,  Chia-Lin YANG

IPC: H01L23/538 ,  H01L21/82 ,  H01L21/469

CPC classification number: H01L23/5389 ,  H01L23/5386 ,  H01L21/82 ,  H01L21/469

Abstract: An electronic device is provided. The electronic device includes an electronic unit, a protective layer, and a circuit layer. The electronic unit includes a chip unit, a first insulating layer, and a second insulating layer. The first insulating layer is disposed on the chip unit, and the second insulating layer is disposed on the first insulating layer. The second insulating layer has a first side. The first side overlaps the chip unit along the normal direction of the electronic unit. The protective layer surrounds the electronic unit, and the circuit layer electrically connects the electronic unit.

公开(公告)号：US20230245949A1

公开(公告)日：2023-08-03

申请号：US17898410

申请日：2022-08-29

Applicant: InnoLux Corporation

Inventor： Chin-Lung TING ,  Chung-Kuang WEI ,  Cheng-Chi WANG ,  Yeong-E CHEN ,  Yi-Hung LIN

IPC: H01L23/44 ,  H05K1/02 ,  H01L25/065 ,  H01L23/498 ,  H01L25/075 ,  H01L23/00

CPC classification number: H01L23/44 ,  H05K1/0209 ,  H01L25/0655 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/49838 ,  H01L25/0753 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2924/12041 ,  H01L2224/32225 ,  H01L2224/73204 ,  H05K2201/064

Abstract: An electronic device is disclosed. The electronic device includes a circuit layer, an electronic element and a thermal conducting element. The electronic element is disposed on the circuit layer and electrically connected to the circuit layer. The thermal conducting element is disposed between the circuit layer and the electronic element. The thermal conducting element is used for performing heat exchange with the electronic element.

公开(公告)号：US20230077312A1

公开(公告)日：2023-03-09

申请号：US17507915

申请日：2021-10-22

Applicant: InnoLux Corporation

Inventor： Yeong-E CHEN ,  Cheng-En CHENG ,  Yu-Ting LIU ,  Cheng-Chi WANG

IPC: H01L21/48 ,  H01L21/66 ,  H01L23/544

Abstract: The application relates to a method for manufacturing an electronic device, and in particular, to a method for manufacturing an electronic device with a carrier substrate. The method includes: providing a carrier; forming a first base layer on the carrier; and forming working units on the first base layer. The working units are spaced apart from one another.

公开(公告)号：US20200294891A1

公开(公告)日：2020-09-17

申请号：US16891916

申请日：2020-06-03

Applicant: InnoLux Corporation

Inventor： Ming-Yen WENG ,  Ker-Yih KAO ,  Chia-Chi HO ,  Tsutomu SHINOZAKI ,  Cheng-Chi WANG ,  I-Yin LI

IPC: H01L23/485 ,  H01L21/311 ,  H01L23/66 ,  H01L25/065 ,  H01L21/48 ,  H01Q1/38

Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 μm to 10 μm. A high-frequency device is also provided.

公开(公告)号：US20180204785A1

公开(公告)日：2018-07-19

申请号：US15844907

申请日：2017-12-18

Applicant: InnoLux Corporation

Inventor： Ming-Yen WENG ,  Ker-Yih KAO ,  Chia-Chi HO ,  Tsutomu SHINOZAKI ,  Cheng-Chi WANG ,  I-Yin LI

IPC: H01L23/485 ,  H01L21/311 ,  H01L21/48 ,  H01L25/065 ,  H01L23/66

Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 μm to 10 μm. A high-frequency device is also provided.