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公开(公告)号：US09368574B1
公开(公告)日：2016-06-14
申请号：US14924782
申请日：2015-10-28
发明人： Anirban Basu , Guy M. Cohen , Amlan Majumdar , Jeffrey W. Sleight
IPC分类号： H01L21/336 , H01L29/775 , H01L29/66 , H01L21/335 , H01L29/06 , H01L29/40 , H01L29/423
CPC分类号： H01L29/0669 , H01L21/0259 , H01L29/0657 , H01L29/0673 , H01L29/0676 , H01L29/401 , H01L29/42392 , H01L29/66742 , H01L29/775 , H01L29/7782 , H01L29/78696 , H01L51/0048
摘要： A semiconductor device comprising a suspended semiconductor nanowire inner gate and outer gate. A first epitaxial dielectric layer surrounds a nanowire inner gate. The first epitaxial dielectric layer is surrounded by an epitaxial semiconductor channel. The epitaxial semiconductor channel surrounds a second dielectric layer. A gate conductor surrounds the second dielectric layer. The gate conductor is patterned into a gate line and defines a channel region overlapping the gate line. The semiconductor device contains source and drain regions adjacent to the gate line.
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公开(公告)号：US09349591B2
公开(公告)日：2016-05-24
申请号：US14525594
申请日：2014-10-28
IPC分类号： H01L21/02 , H01L29/267
CPC分类号： H01L21/02488 , H01L21/02373 , H01L21/02538 , H01L21/02546 , H01L21/02614
摘要： A semiconductor structure can be created by forming an insulator layer over a surface of a substrate. An intermediate layer can be formed on top of the insulator layer, wherein openings in the intermediate layer may expose regions of the insulator. Openings may be formed in the exposed regions of the insulator layer to create exposed areas of the substrate. A first element of a multi-element semiconductor can be deposited onto the exposed regions of the insulator layer, into the openings in the exposed regions of the insulator layer, and onto the exposed areas of the substrate. A capping layer can be formed over the first element of the multi-element semiconductor. The first element can be melted. A liquid solution can be created by dissolving a second element of the multi-element semiconductor into first element. A multi-element semiconductor, seeded off the substrate, can be formed from the liquid solution.
摘要翻译： 可以通过在衬底的表面上形成绝缘体层来形成半导体结构。 可以在绝缘体层的顶部上形成中间层，其中中间层中的开口可以暴露绝缘体的区域。 可以在绝缘体层的暴露区域中形成开口，以形成衬底的暴露区域。 可以将多元素半导体的第一元素沉积到绝缘体层的暴露区域上，进入绝缘体层的暴露区域中的开口中以及衬底的暴露区域上。 可以在多元件半导体的第一元件上形成覆盖层。 第一个元素可以融化。 可以通过将多元素半导体的第二元素溶解在第一元素中来产生液体溶液。 可以从液体溶液形成从衬底上撒下的多元素半导体。
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公开(公告)号：US20140239254A1
公开(公告)日：2014-08-28
申请号：US13864798
申请日：2013-04-17
IPC分类号： H01L29/06 , H01L29/775
CPC分类号： H01L29/0669 , B82Y10/00 , H01L21/84 , H01L27/1203 , H01L29/0665 , H01L29/0673 , H01L29/42392 , H01L29/775 , H01L29/78696
摘要： A system is provided and includes a wafer and a mask. The wafer includes a silicon-on-insulator (SOI) structure disposed on a buried oxide (BOX) layer and has a first region with a first SOI thickness and a second region with a second SOI thickness, the first and second SOI thicknesses being different from one another and sufficiently large such that respective pairs of SOI pads connected via respective nanowires with different thicknesses are formable therein. The mask covers one of the first and second regions and prevents a thickness change of the other of the first and second regions from having effect at the one of the first and second regions.
摘要翻译： 提供了一种系统，其包括晶片和掩模。 晶片包括设置在掩埋氧化物（BOX）层上的绝缘体上硅（SOI）结构，并且具有第一SOI厚度的第一区域和具有第二SOI厚度的第二区域，第一和第二SOI厚度不同 并且足够大，使得通过具有不同厚度的相应纳米线连接的各对SOI焊盘成为可能。 掩模覆盖第一和第二区域中的一个并且防止第一和第二区域中的另一个区域的厚度变化在第一和第二区域中的一个区域具有效果。
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公开(公告)号：US12098415B2
公开(公告)日：2024-09-24
申请号：US18449087
申请日：2023-08-14
发明人： Amos Cahan , Guy M. Cohen , Theodore G. van Kessel , Sufi Zafar
IPC分类号： G01N27/02 , C12M1/00 , C12M1/12 , C12M1/18 , C12M1/34 , C12M3/00 , C12Q1/02 , C12Q1/18 , G01N15/06 , G01N21/59 , G01N27/04
CPC分类号： C12Q1/02 , C12M1/18 , C12M1/3453 , C12M3/00 , C12M23/34 , C12M25/14 , C12M31/02 , C12M41/36 , C12Q1/18 , G01N15/0656 , G01N21/59 , G01N27/04 , C12N2533/76 , G01N27/02 , G01N2201/08
摘要： A structure for culturing cells includes growth medium regions on a surface of the structure. Each of the growth medium regions includes a growth medium surface configured to receive and promote growth in a cell that is being cultured. The structure includes a non-growth medium. The non-growth medium includes a non-growth medium surface configured to receive the cell that is being cultured.
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公开(公告)号：US12094583B2
公开(公告)日：2024-09-17
申请号：US17516362
申请日：2021-11-01
发明人： Amos Cahan , Guy M. Cohen , Lior Horesh , Raya Horesh
CPC分类号： G16H10/60 , B65B3/003 , G16H20/13 , B65B2210/04 , B65B2220/14
摘要： A medication dispenser system and use thereof for providing exact personal dosing for a patient are provided. In one aspect, a method for dispensing medications is provided. The method includes the steps of: obtaining patient information and a list of the medications for the patient; calculating a personal dose of each of the medications for the patient using the patient and cross-medication interaction information; and preparing treatments each containing the personal dose of each of the medications in a single treatment. In another aspect a system for dispensing medications includes: a patient information component for obtaining patient information and a list of the medications for the patient; a dosage calculator component for calculating a personal dose of each of the medications for the patient using the patient information; and a medication dispenser component for preparing treatments each containing the personal dose of each of the medications in a single treatment.
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公开(公告)号：US12058943B2
公开(公告)日：2024-08-06
申请号：US18105935
申请日：2023-02-06
发明人： Nanbo Gong , Guy M. Cohen , Takashi Ando
CPC分类号： H10N70/231 , G11C13/0004 , G11C13/0069 , H10B63/30 , H10N70/8413 , G11C2013/008
摘要： An apparatus comprises a phase-change material, a first electrode at a first end of the phase-change material, a second electrode at a second end of the phase-change material, and a heating element coupled to a least a given portion of the phase-change material between the first end and the second end. The apparatus also comprises a first input terminal coupled to the heating element, a second input terminal coupled to the heating element, and an output terminal coupled to the second electrode.
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公开(公告)号：US20240202512A1
公开(公告)日：2024-06-20
申请号：US18083673
申请日：2022-12-19
发明人： Nanbo Gong , Takashi Ando , Guy M. Cohen , Malte Johannes Rasch
IPC分类号： G06N3/065 , G06F12/02 , G06N3/0985
CPC分类号： G06N3/065 , G06F12/0238 , G06N3/0985 , G06F2212/202
摘要： Analog memory-based activation function for an artificial neural network can be provided. An apparatus can include at least two non-volatile memory devices connected in parallel such that the current can flow through one of the two non-volatile memory devices depending on the voltage level driving the current. To control which branch an input current flows through, each of the two non-volatile memory devices can be connected to a circuit element that can function as a switch, for example, a diode such as a semiconductor diode, a transistor, or another circuit element. Such apparatus can implement an analog memory-based activation function, for example, for an analog memory-based artificial neural network.
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公开(公告)号：US20240147874A1
公开(公告)日：2024-05-02
申请号：US18051561
申请日：2022-11-01
发明人： Guy M. Cohen , Kangguo Cheng , Juntao Li , Ruilong Xie , Julien Frougier
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/1675
摘要： A device structure for a phase-change memory device is disclosed. The device structure includes a top electrode, a phase-change material that is recessed between two layers of resistive liner material, and a conductive material. The conductive material contacts the sidewall of the top electrode, the sidewall of the phase-change material, and a portion of a top surface and a bottom surface of each of the two layers of the resistive liner material. The device structure includes a heater contacting a bottom electrode and the bottom layer of the resistive liner material. The heater is in a first bilayer dielectric. A second bilayer dielectric is under the top electrode.
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公开(公告)号：US11805713B2
公开(公告)日：2023-10-31
申请号：US17540820
申请日：2021-12-02
发明人： Guy M. Cohen , Takashi Ando , Nanbo Gong , Kevin W. Brew
CPC分类号： H10N70/235 , G11C13/0004 , G11C13/004 , G11C13/0069 , H10N70/841 , H10N70/882 , H10N70/883 , G11C2013/0045
摘要： Resistive memory devices are provided which are configured to mitigate resistance drift. A device comprises a phase-change element, a resistive liner, a first electrode, a second electrode, and a third electrode. The resistive liner is disposed in contact with a first surface of the phase-change element. The first electrode is coupled to a first end portion of the resistive liner. The second electrode is coupled to a second end portion of the resistive liner. The third electrode is coupled to the first surface of the phase-change element.
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公开(公告)号：US20230083308A1
公开(公告)日：2023-03-16
申请号：US17472836
申请日：2021-09-13
发明人： Guy M. Cohen , Nanbo Gong , Takashi Ando
摘要： A method for forming a nonvolatile PCM logic device may include providing a PCM film component having a first end contact distally opposed from a second end contact, positing a first proximity adjacent to a first surface of the PCM film component, positing a second proximity heater adjacent to a second surface of the PCM film component, wherein the first proximity heater and the second proximity heater are electrically isolated from the PCM film component. The method may further include applying a combination of pulses to one or more of the first proximity heater and the second proximity heater to change a resistance value of the PCM film component corresponding to a logic truth table. Further, the method may include simultaneously applying a first combination of reset pulses to program, or set pulses to initialize, the PCM film component, to the first proximity heater and the second proximity heater.
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