ACOUSTIC SENSOR WITH INTEGRATED PROGRAMMABLE ELECTRONIC INTERFACE
    21.
    发明申请
    ACOUSTIC SENSOR WITH INTEGRATED PROGRAMMABLE ELECTRONIC INTERFACE 审中-公开
    具有集成可编程电子接口的声学传感器

    公开(公告)号:US20140264652A1

    公开(公告)日:2014-09-18

    申请号:US13950240

    申请日:2013-07-24

    CPC classification number: H04R19/04 H04R19/005 H04R2201/003

    Abstract: An integrated MEMS acoustic sensor has a MEMS transducer and a programmable electronic interface. The programmable electronic interface includes non-volatile memory and is coupled to the MEMS transducer. Using programmable electrical functions, the programmable electronic interface is operable to sense variations in the MEMS transducer caused by application of an acoustic pressure to the MEMS transducer.

    Abstract translation: 集成的MEMS声学传感器具有MEMS传感器和可编程电子接口。 可编程电子接口包括非易失性存储器并耦合到MEMS换能器。 使用可编程电气功能,可编程电子接口可操作以感测通过向MEMS换能器施加声压而引起的MEMS换能器中的变化。

    Methods for CMOS-MEMS integrated devices with multiple sealed cavities maintained at various pressures

    公开(公告)号:US10532926B2

    公开(公告)日:2020-01-14

    申请号:US15358956

    申请日:2016-11-22

    Abstract: A Microelectromechanical systems (MEMS) structure comprises a MEMS wafer. A MEMS wafer includes a handle wafer with cavities bonded to a device wafer through a dielectric layer disposed between the handle and device wafers. The MEMS wafer also includes a moveable portion of the device wafer suspended over a cavity in the handle wafer. Four methods are described to create two or more enclosures having multiple gas pressure or compositions on a single substrate including, each enclosure containing a moveable portion. The methods include: A. Forming a secondary sealed enclosure, B. Creating multiple ambient enclosures during wafer bonding, C. Creating and breaching an internal gas reservoir, and D. Forming and subsequently sealing a controlled leak/breach into the enclosure.

    CMOS-MEMS-CMOS platform
    24.
    发明授权

    公开(公告)号:US10093533B2

    公开(公告)日:2018-10-09

    申请号:US15711890

    申请日:2017-09-21

    Abstract: A sensor chip includes a first substrate with a first surface and a second surface including at least one CMOS circuit, a first MEMS substrate with a first surface and a second surface on opposing sides of the first MEMS substrate, a second substrate, a second MEMS substrate, and a third substrate including at least one CMOS circuit. The first surface of the first substrate is attached to a packaging substrate and the second surface of the first substrate is attached to the first surface of the first MEMS substrate. The second surface of the first MEMS substrate is attached to the second substrate. The first substrate, the first MEMS substrate, the second substrate and the packaging substrate are provided with electrical inter-connects.

    Systems and apparatus having top port integrated back cavity micro electro-mechanical system microphones and methods of fabrication of the same

    公开(公告)号:US09621975B2

    公开(公告)日:2017-04-11

    申请号:US14558911

    申请日:2014-12-03

    Inventor: Fang Liu Martin Lim

    CPC classification number: H04R1/08 H04R19/005 H04R2201/003

    Abstract: A micro electro-mechanical system (MEMS) device is provided. The MEMS device includes: a first substrate having a first surface and a second surface, and a port disposed through the first substrate, wherein the port is configured to receive acoustic waves and wherein the first surface is exposed to an environment outside the MEMS device; and a diaphragm coupled to and facing the second surface and configured to deflect in response to pressure differential at the diaphragm in response to the received acoustic waves. The MEMS device also includes a second substrate coupled to and facing the diaphragm, and including circuitry, wherein the second substrate includes a recess region forming an integrated back cavity in the MEMS device. The MEMS device also includes an electrical connection electrically coupling the first substrate and the second substrate and configured to transmit an electrical signal indicative of the deflection of the diaphragm.

    Cavity pressure modification using local heating with a laser
    27.
    发明授权
    Cavity pressure modification using local heating with a laser 有权
    使用局部加热激光进行腔压力修改

    公开(公告)号:US09556019B2

    公开(公告)日:2017-01-31

    申请号:US14705630

    申请日:2015-05-06

    Abstract: A method and system for changing a pressure within at least one enclosure in a MEMS device are disclosed. In a first aspect, the method comprises applying a laser through one of the at least two substrates onto a material which changes the pressure within at least one enclosure when exposed to the laser, wherein the at least one enclosure is formed by the at least two substrates. In a second aspect, the system comprises a MEMS device that includes a first substrate, a second substrate bonded to the first substrate, wherein at least one enclosure is located between the first and the second substrates, a metal layer within one of the first substrate and the second substrate, and a material vertically oriented over the metal layer, wherein when the material is heated the material changes a pressure within the at least one enclosure.

    Abstract translation: 公开了一种用于改变MEMS装置中的至少一个外壳内的压力的方法和系统。 在第一方面,所述方法包括将激光通过所述至少两个基板之一施加到当暴露于所述激光器时改变至少一个外壳内的压力的材料,其中所述至少一个外壳由所述至少两个基板形成 底物。 在第二方面,该系统包括MEMS器件,其包括第一衬底,与第一衬底结合的第二衬底,其中至少一个外壳位于第一和第二衬底之间,第一衬底之一内的金属层 和第二基底以及垂直取向在金属层上的材料,其中当材料被加热时,材料改变至少一个外壳内的压力。

    Method for MEMS structure with dual-level structural layer and acoustic port
    28.
    发明授权
    Method for MEMS structure with dual-level structural layer and acoustic port 有权
    具有双层结构层和声学端口的MEMS结构方法

    公开(公告)号:US09227842B2

    公开(公告)日:2016-01-05

    申请号:US14084569

    申请日:2013-11-19

    Abstract: A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer.

    Abstract translation: 一种用于制造MEMS器件的方法包括将第一牺牲层沉积并图案化到硅衬底上,第一牺牲层被部分去除留下第一剩余氧化物。 此外,该方法包括在硅衬底上沉积导电结构层,导电结构层与硅衬底的至少一部分进行物理接触。 此外,在导电结构层的顶部上形成第二牺牲层。 在第二牺牲层停止硅衬底的图案化和蚀刻。 此外,MEMS衬底被结合到CMOS晶片,其上形成有金属层的CMOS晶片。 在MEMS衬底和金属层之间形成电连接。

    MEMS device and process for RF and low resistance applications
    29.
    发明授权
    MEMS device and process for RF and low resistance applications 有权
    用于RF和低电阻应用的MEMS器件和工艺

    公开(公告)号:US09114977B2

    公开(公告)日:2015-08-25

    申请号:US13687304

    申请日:2012-11-28

    CPC classification number: B81B3/0086 B81B2207/07 B81C3/001 B81C2201/019

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    Abstract translation: 公开了用于低电阻应用的MEMS器件。 在第一方面,MEMS器件包括MEMS晶片,其包括具有包含第一表面和第二表面的一个或多个腔的手柄晶片和沉积在手柄晶片的第二表面上的绝缘层。 MEMS器件还包括具有第三和第四表面的器件层,第三表面结合到处理晶片的第二表面的绝缘层; 和在第四表面上的金属导电层。 MEMS器件还包括结合到MEMS晶片的CMOS晶片。 CMOS晶片包括至少一个金属电极,使得在至少一个金属电极和金属导电层的至少一部分之间形成电连接。

    MEMS acoustic sensor with integrated back cavity
    30.
    发明授权
    MEMS acoustic sensor with integrated back cavity 有权
    具有集成后腔的MEMS声学传感器

    公开(公告)号:US08692340B1

    公开(公告)日:2014-04-08

    申请号:US13800061

    申请日:2013-03-13

    Abstract: A MEMS device is disclosed. The MEMS device comprises a first plate with a first surface and a second surface; and an anchor attached to a first substrate. The MEMS device further includes a second plate with a third surface and a fourth surface attached to the first plate. A linkage connects the anchor to the first plate, wherein the first plate and second plate are displaced in the presence of an acoustic pressure differential between the first and second surfaces of the first plate. The first plate, second plate, linkage, and anchor are all contained in an enclosure formed by the first substrate and a second substrate, wherein one of the first and second substrates contains a through opening to expose the first surface of the first plate to the environment.

    Abstract translation: 公开了MEMS器件。 MEMS器件包括具有第一表面和第二表面的第一板; 以及附接到第一基板的锚。 MEMS器件还包括具有附接到第一板的第三表面和第四表面的第二板。 连杆将锚固件连接到第一板,其中第一板和第二板在第一板的第一和第二表面之间存在声压差的情况下移位。 第一板,第二板,连杆和锚固件都包含在由第一基板和第二基板形成的外壳中,其中第一和第二基板中的一个包含通孔,以将第一板的第一表面暴露于 环境。

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