公开(公告)号：US20170343845A1

公开(公告)日：2017-11-30

申请号：US15662385

申请日：2017-07-28

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI ,  Arichika ISHIDA ,  Hidekazu MIYAKE ,  Hiroto MIYAKE ,  Isao SUZUMURA

IPC: G02F1/1368 ,  G02F1/1343 ,  G02F1/1362 ,  H01L29/786 ,  H01L27/12 ,  H01L29/423

CPC classification number: G02F1/1368 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136209 ,  G02F1/136227 ,  G02F2001/136218 ,  G02F2001/13685 ,  G02F2202/10 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/7869

Abstract: According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.

公开(公告)号：US20170338249A1

公开(公告)日：2017-11-23

申请号：US15585401

申请日：2017-05-03

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA ,  Kazufumi WATABE ,  Yoshinori ISHII ,  Hidekazu MIYAKE ,  Yohei YAMAGUCHI

IPC: H01L27/12 ,  H01L29/51 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/133 ,  H01L29/786 ,  H01L29/24 ,  H01L27/32

CPC classification number: H01L27/1225 ,  G02F1/13306 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/10 ,  G02F2202/104 ,  H01L27/1251 ,  H01L27/1259 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869

Abstract: The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US20170077149A1

公开(公告)日：2017-03-16

申请号：US15341041

申请日：2016-11-02

Applicant: Japan Display Inc.

Inventor： Norihiro UEMURA ,  lsao SUZUMURA ,  Hidekazu MIYAKE ,  Yohei YAMAGUCHI

IPC: H01L27/12 ,  H01L29/417 ,  G02F1/1343 ,  G02F1/1333 ,  G02F1/1368 ,  G02F1/1362 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/1225 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/134372 ,  H01L27/124 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/7869

Abstract: Provided are a reliable high performance thin film transistor and a reliable high performance display device. The display device has: a gate electrode which is formed on a substrate; a gate insulating film which is formed to cover the substrate and the gate electrode; an oxide semiconductor layer which is formed on the gate electrode through the gate insulating film; a channel protective layer which is in contact with the oxide semiconductor layer and formed on the oxide semiconductor layer; and source/drain electrodes which are electrically connected to the oxide semiconductor layer and formed to cover the oxide semiconductor layer. A metal oxide layer is formed on an upper part of the channel protective layer. The source/drain electrodes are formed to be divided apart on the channel protective layer and the metal oxide layer.

Abstract translation: 提供可靠的高性能薄膜晶体管和可靠的高性能显示器件。 显示装置具有形成在基板上的栅电极; 形成为覆盖基板和栅电极的栅极绝缘膜; 通过栅极绝缘膜形成在栅电极上的氧化物半导体层; 沟道保护层，其与所述氧化物半导体层接触并形成在所述氧化物半导体层上; 以及与氧化物半导体层电连接并形成为覆盖氧化物半导体层的源极/漏极。 金属氧化物层形成在沟道保护层的上部。 源极/漏极形成为在沟道保护层和金属氧化物层上分开。

公开(公告)号：US20140307194A1

公开(公告)日：2014-10-16

申请号：US14245102

申请日：2014-04-04

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA ,  Norihiro UEMURA ,  Takeshi NODA ,  Hidekazu MIYAKE ,  Yohei YAMAGUCHI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78696 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/1337 ,  G02F1/134309 ,  G02F1/1368 ,  G02F2001/133357 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78693

Abstract: In a bottom gate thin film transistor using a first oxide semiconductor layer as a channel layer, the first oxide semiconductor layer and second semiconductor layers include In and O. An (O/In) ratio of the second oxide semiconductor layers is equal to or larger than that of the first oxide semiconductor layer, and a film thickness thereof is thicker than that of the first oxide semiconductor layer.

Abstract translation: 在使用第一氧化物半导体层作为沟道层的底栅极薄膜晶体管中，第一氧化物半导体层和第二半导体层包括In和O.第二氧化物半导体层的（O / In）比等于或大于 比第一氧化物半导体层的厚度厚，其厚度比第一氧化物半导体层厚。

公开(公告)号：US20240421159A1

公开(公告)日：2024-12-19

申请号：US18814858

申请日：2024-08-26

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA ,  Kazufumi WATABE ,  Yoshinori ISHII ,  Hidekazu MIYAKE ,  Yohei YAMAGUCHI

IPC: H01L27/12 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786 ,  H10K59/121

Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US20240030226A1

公开(公告)日：2024-01-25

申请号：US18480552

申请日：2023-10-04

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA ,  Kazufumi WATABE ,  Yoshinori ISHII ,  Hidekazu MIYAKE ,  Yohei YAMAGUCHI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/133 ,  G02F1/1362 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L27/1225 ,  H01L27/1251 ,  H01L29/78633 ,  H01L29/517 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78675 ,  G02F1/1368 ,  G02F1/13306 ,  G02F1/136209 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L27/1259 ,  G02F2202/10 ,  G02F2202/104 ,  G02F1/13685 ,  H10K59/1213

Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US20230027596A1

公开(公告)日：2023-01-26

申请号：US17958515

申请日：2022-10-03

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/822 ,  H01L21/311 ,  G02F1/1333 ,  G02F1/1362

Abstract: A wiring structure includes a structure body including a pattern, a first conductive layer above the structure body, the first conductive layer having a shape, the shape crossing an edge of a pattern of the structure body and reflecting a step of the edge of the pattern of the structure body, a first insulating layer above the first conductive layer, the first insulating layer having a first opening overlapping the edge of the pattern of the structure body in a plane view, and r is arranged with a second opening in a region overlapping the semiconductor layer in a plane view, a second conductive layer in the first opening, the second conductive layer being connected to the first conductive layer.

公开(公告)号：US20200350341A1

公开(公告)日：2020-11-05

申请号：US16931454

申请日：2020-07-17

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Yohei YAMAGUCHI ,  Hirokazu WATANABE ,  Isao SUZUMURA

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1368

Abstract: The purpose of the present invention is to realize the display device having thin film transistors of the oxide semiconductor of stable characteristics. An example of the concrete structure is that: A display device having a substrate including a display area, plural pixels formed in the display area, the pixel includes a first thin film transistor having an oxide semiconductor film, a first insulating film made of a first silicon oxide on a first side of the oxide semiconductor film, a second insulating film made of a second silicon oxide on a second side of the oxide semiconductor film, wherein oxygen desorption amount per unit area from the first insulating film is larger than that from the second insulating film, when measured by TDS (Thermal Desorption Spectrometry) provided M/z=32 and a measuring range in temperature is from 100 centigrade to 500 centigrade.

公开(公告)号：US20200227563A1

公开(公告)日：2020-07-16

申请号：US16735800

申请日：2020-01-07

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI ,  Yuichiro HANYU ,  Hiroki HIDAKA

IPC: H01L29/786 ,  H01L29/423 ,  H01L21/02 ,  H01L27/12

Abstract: A semiconductor device including a first oxide semiconductor layer, a first gate electrode opposing the first oxide semiconductor layer, a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode, a first insulating layer covering the first oxide semiconductor layer and having a first opening, a first conductive layer above the first insulating layer and in the first opening, the first conductive layer being electrically connected to the first oxide semiconductor layer, and an oxide layer between an upper surface of the first insulating layer and the first conductive layer, wherein the first insulating layer is exposed from the oxide layer in a region not overlapping the first conductive layer in a plan view.

公开(公告)号：US20200227443A1

公开(公告)日：2020-07-16

申请号：US16733435

申请日：2020-01-03

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/822 ,  H01L21/311 ,  G02F1/1333 ,  G02F1/1362

Abstract: A wiring structure includes a structure body including a pattern, a first conductive layer above the structure body, the first conductive layer having a shape, the shape crossing an edge of a pattern of the structure body and reflecting a step of the edge of the pattern of the structure body, a first insulating layer above the first conductive layer, the first insulating layer having a first opening overlapping the edge of the pattern of the structure body in a plane view, and r is arranged with a second opening in a region overlapping the semiconductor layer in a plane view, a second conductive layer in the first opening, the second conductive layer being connected to the first conductive layer.