Abstract:
Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating.
Abstract:
Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed.
Abstract:
Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.
Abstract:
Provided are a gas sensing apparatus and a gas sensing method using the apparatus. The gas sensing apparatus includes a detection chamber, a light source, a light sensor, a gas source, and a controller. The light source is disposed at one end of the detection chamber, and a light sensor is disposed at the other end of the detection chamber. The gas source provides gas to the detection chamber. The controller controls the light source and the light sensor. The light source includes a laser supplying laser light, and a light scanner reflecting and scanning the laser light in the detection chamber. The controller includes a phase sensitive detector electrically connected to the light sensor.
Abstract:
Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.
Abstract:
Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.
Abstract:
Provided are a waveguide structure and an arrayed waveguide grating structure. The arrayed waveguide grating structure includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler and the output star coupler. Each of the arrayed waveguides includes at least one section having a high confinement factor and at least two sections having a relatively low confinement factor. The sections of the arrayed waveguides having a high confinement factor have the same structure.
Abstract:
Provided is a photodetector converting an optical signal into an electrical signal. The photodetector includes: a plurality of semiconductor layers sequentially stacked on a substrate; a plurality of photoelectric conversion units formed in the semiconductor layers, respectively, and having different spectral sensitivities from each other; and buffer layers interposed between the adjacent semiconductor layers, respectively. Each of the buffer layers alleviates stress between the adjacent semiconductor layers.
Abstract:
Provided is a photonics device including at least two arrayed waveguide grating structures. Each of the arrayed waveguide grating structures of the photonics device includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler to the output star coupler. Each of the arrayed waveguides includes at least one first section having a high confinement factor and at least two second sections having a low confinement factor. The first sections of the arrayed waveguides have the same structure.
Abstract:
Provided are an electrical and/or electronic system protecting circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove high-frequency noise with a voltage greater than a rated standard voltage received via a power line or a signal line of an electrical and/or electronic system, and the electrical and/or electronic system including the electrical and/or electronic system protecting circuit. The abrupt MIT device of the electrical and/or electronic system protecting circuit abrupt is connected in parallel to the electrical and/or electronic system to be protected from the noise. The electrical and/or electronic system protecting circuit bypasses toward the abrupt MIT device most of the noise current generated when the voltage greater than the rated standard voltage is applied, thereby protecting the electrical and/or electronic system.