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21.发明授权
公开(公告)号：US5446293A
公开(公告)日：1995-08-29
申请号：US338117
申请日：1994-11-09
Applicant: Hye-Yong Chu , Pyong-Woon Park , Seon-Gyu Han , Young-Wan Choi , Gyung-Ock Kim
Inventor： Hye-Yong Chu , Pyong-Woon Park , Seon-Gyu Han , Young-Wan Choi , Gyung-Ock Kim
IPC: H01L31/10 , H01L31/0352 , H01L27/14 , H01L31/00
CPC classification number: B82Y10/00 , H01L31/0352
Abstract: Disclosed is an operation principle and an epitaxial structure of resonant tunneling opto-electronic device. According to the present invention, the photo-generated holes stored in front of the double barrier quantum well structure by light illumination. As a result, a large potential drop occurs in the double barrier quantum well structure. And a peak signal of the opto-electronic resonant tunneling device is generated at a relatively lower voltage illumination to one generated before introducing the light into the device. An amount of photocurrent is 10.sup.3 times and over as compared to the conventional p-i-n diode because a resonant tunneling current is optically controlled by light illumination. So that, it is possible to drive peripheral circuit without use of additional amplifiers for amplifying an output signal from the opto-electronic device.
Abstract translation: 公开了谐振隧道光电器件的工作原理和外延结构。 根据本发明，通过光照射存储在双重阻挡量子阱结构前面的光生孔。 结果，双重势垒量子阱结构中出现大的电位降。 光电共振隧穿装置的峰值信号在相对较低的电压照明下产生，并将光引入装置之前产生。 与传统的p-i-n二极管相比，光电流量是103倍以上，因为谐振隧穿电流是通过光照射来光学控制的。 因此，可以驱动外围电路而不使用用于放大来自光电子器件的输出信号的附加放大器。
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22.发明授权Semiconductor integrated circuits including optoelectronic device for changing optical phase 有权包括用于改变光学相位的光电器件的半导体集成电路公开(公告)号：US08422834B2
公开(公告)日：2013-04-16
申请号：US12746167
申请日：2008-06-03
Applicant: Jeong-Woo Park , Gyung-Ock Kim , Mi-Ran Park , Jong-Bum You
Inventor： Jeong-Woo Park , Gyung-Ock Kim , Mi-Ran Park , Jong-Bum You
CPC classification number: G02F1/218 , G02F2001/212 , G02F2201/302
Abstract: Provided is a semiconductor integrated circuit. The semiconductor integrated circuit includes a semiconductor pattern disposed on a substrate and including an optical waveguide part and a pair of recessed portions. The optical waveguide part has a thickness ranging from about 0.05 μm to about 0.5 μm. The recessed portions are disposed on both sides of the optical waveguide part and have a thinner thickness than the optical waveguide part. A first doped region and a second doped region are disposed in the recessed portions, respectively. The first and second doped regions are doped with a first conductive type dopant and a second conductive type dopant, respectively. An intrinsic region is formed in at least the optical waveguide part to contact the first and second doped regions.
Abstract translation: 提供了一种半导体集成电路。 半导体集成电路包括设置在基板上并且包括光波导部分和一对凹部的半导体图案。 光波导部分的厚度范围为约0.05μm至约0.5μm。 凹部设置在光波导部分的两侧，并且具有比光波导部分更薄的厚度。 第一掺杂区域和第二掺杂区域分别设置在凹部中。 第一和第二掺杂区域分别掺杂有第一导电型掺杂剂和第二导电型掺杂剂。 在至少光波导部分中形成本征区域以接触第一和第二掺杂区域。
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公开(公告)号：US08017420B2
公开(公告)日：2011-09-13
申请号：US12491443
申请日：2009-06-25
Applicant: In-Gyoo Kim , Dong-Woo Suh , Gyung-Ock Kim
Inventor： In-Gyoo Kim , Dong-Woo Suh , Gyung-Ock Kim
IPC: H01L21/00
Abstract: Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.
Abstract translation: 提供一种形成光波导的方法。 该方法包括在半导体衬底上形成沟槽以限定有源部分，并部分氧化活性部分。 有源部分的非氧化部分包括在光信号通过的芯中，有源部分的氧化部分包含在包层中。
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24.发明授权Low-voltage noise preventing circuit using abrupt metal-insulator transition device 失效使用突变金属 - 绝缘体转换器件的低压噪声防止电路公开(公告)号：US07911756B2
公开(公告)日：2011-03-22
申请号：US11908837
申请日：2006-03-07
Applicant: Hyun-Tak Kim , Kwang-Yong Kang , Byung-Gyu Chae , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun , Gyung-Ock Kim
Inventor： Hyun-Tak Kim , Kwang-Yong Kang , Byung-Gyu Chae , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun , Gyung-Ock Kim
IPC: H02H9/00
CPC classification number: H01L49/003
Abstract: Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed.
Abstract translation: 提供了一种使用突变金属 - 绝缘体转变（MIT）装置的低电压噪声防止电路，其能够以低于额定信号电压的电压有效地去除噪声信号。 突发MIT设备串联连接到电气和/或电子系统以防止噪声信号，并且以预定电压经受突然MIT。 因此，可以有效地消除低电压噪声。
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公开(公告)号：US07738104B2
公开(公告)日：2010-06-15
申请号：US12111864
申请日：2008-04-29
Applicant: In-Gyoo Kim , Gyung-Ock Kim
Inventor： In-Gyoo Kim , Gyung-Ock Kim
CPC classification number: G01N21/3504
Abstract: Provided are a gas sensing apparatus and a gas sensing method using the apparatus. The gas sensing apparatus includes a detection chamber, a light source, a light sensor, a gas source, and a controller. The light source is disposed at one end of the detection chamber, and a light sensor is disposed at the other end of the detection chamber. The gas source provides gas to the detection chamber. The controller controls the light source and the light sensor. The light source includes a laser supplying laser light, and a light scanner reflecting and scanning the laser light in the detection chamber. The controller includes a phase sensitive detector electrically connected to the light sensor.
Abstract translation: 提供了一种使用该装置的气体感测装置和气体感测方法。 气体感测装置包括检测室，光源，光传感器，气体源和控制器。 光源设置在检测室的一端，光检测器设置在检测室的另一端。 气体源向检测室提供气体。 控制器控制光源和光传感器。 光源包括提供激光的激光和在检测室中反射和扫描激光的光扫描器。 控制器包括电连接到光传感器的相敏检测器。
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Patent Agency Ranking
公开(公告)号：US08017268B2
公开(公告)日：2011-09-13
申请号：US11813898
申请日：2006-01-12
Applicant: Hyun-Tak Kim , Doo-Hyeb Youn , Byung-Gyu Chae , Kwang-Yong Kang , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun , Jung-Wook Lim , Gyung-Ock Kim , Sung-Lyul Maeng
Inventor： Hyun-Tak Kim , Doo-Hyeb Youn , Byung-Gyu Chae , Kwang-Yong Kang , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun , Jung-Wook Lim , Gyung-Ock Kim , Sung-Lyul Maeng
CPC classification number: H01M2/34 , H01M2/348 , H01M10/052 , H01M10/443 , H01M2200/00 , H01M2200/106
Abstract: Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.
Abstract translation: 提供一种锂二次电池，其包括能够延迟或防止电池爆炸的放电单元。 锂二次电池包括与电池体平行设置的放电单元。 放电单元包括连接到电池体的正极的第一电极，连接到电池体的负极的第二电极和设置在第一电极和第二电极之间的放电材料膜，引起突然的放电 高于预定温度。 放电材料膜，例如突然的金属 - 绝缘体转变（MIT）材料膜可以引起突然的放电，从而防止或延迟电池爆炸。
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公开(公告)号：US07927988B2
公开(公告)日：2011-04-19
申请号：US12488577
申请日：2009-06-21
Applicant: In-Gyoo Kim , O-Kyun Kwon , Dong-Woo Suh , Gyung-Ock Kim
Inventor： In-Gyoo Kim , O-Kyun Kwon , Dong-Woo Suh , Gyung-Ock Kim
IPC: H01L21/425
CPC classification number: H01L21/2007 , H01L21/76251
Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.
Abstract translation: 提供一种制造半导体器件的方法。 该方法包括在第一层和第二层之间形成第一层，第二层，离子注入层和第二层上的抗氧化层，并进行热处理工艺以在第一层和第二层之间形成绝缘层 同时防止使用抗氧化层损失第二层。
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28.发明申请SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING OPTOELECTRONIC DEVICE FOR CHANGING OPTICAL PHASE 有权半导体集成电路，包括用于改变光学相位的光电器件公开(公告)号：US20100278477A1
公开(公告)日：2010-11-04
申请号：US12746167
申请日：2008-06-03
Applicant: Jeong-Woo Park , Gyung-Ock Kim , Mi-Ran Park , Jong-Bum You
Inventor： Jeong-Woo Park , Gyung-Ock Kim , Mi-Ran Park , Jong-Bum You
CPC classification number: G02F1/218 , G02F2001/212 , G02F2201/302
Abstract: Provided is a semiconductor integrated circuit. The semiconductor integrated circuit includes a semiconductor pattern disposed on a substrate and including an optical waveguide part and a pair of recessed portions. The optical waveguide part has a thickness ranging from about 0.05 m to about 0.5 μm. The recessed portions are disposed on both sides of the optical waveguide part and have a thinner thickness than the optical waveguide part. A first doped region and a second doped region are disposed in the recessed portions, respectively. The first and second doped regions are doped with a first conductive type dopant and a second conductive type dopant, respectively. An intrinsic region is formed in at least the optical waveguide part to contact the first and second doped regions.
Abstract translation: 提供了一种半导体集成电路。 半导体集成电路包括设置在基板上并且包括光波导部分和一对凹部的半导体图案。 光波导部分的厚度范围为约0.05μm至约0.5μm。 凹部设置在光波导部分的两侧，并且具有比光波导部分更薄的厚度。 第一掺杂区域和第二掺杂区域分别设置在凹部中。 第一和第二掺杂区域分别掺杂有第一导电型掺杂剂和第二导电型掺杂剂。 在至少光波导部分中形成本征区域以接触第一和第二掺杂区域。
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公开(公告)号：US20100270589A1
公开(公告)日：2010-10-28
申请号：US12741258
申请日：2008-05-08
Applicant: Dong-Woo Suh , Gyung-Ock Kim , Sang-Hun Kim
Inventor： Dong-Woo Suh , Gyung-Ock Kim , Sang-Hun Kim
IPC: H01L31/10 , H01L31/0248
CPC classification number: H01L31/105 , H01L31/028 , H01L31/1812 , Y02E10/547
Abstract: Provided is a photodetector converting an optical signal into an electrical signal. The photodetector includes: a plurality of semiconductor layers sequentially stacked on a substrate; a plurality of photoelectric conversion units formed in the semiconductor layers, respectively, and having different spectral sensitivities from each other; and buffer layers interposed between the adjacent semiconductor layers, respectively. Each of the buffer layers alleviates stress between the adjacent semiconductor layers.
Abstract translation: 提供了将光信号转换为电信号的光电检测器。 光电检测器包括：顺序堆叠在基板上的多个半导体层; 分别形成在所述半导体层中并具有彼此不同的光谱灵敏度的多个光电转换单元; 以及分别介于相邻半导体层之间的缓冲层。 每个缓冲层减轻相邻半导体层之间的应力。
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30.发明申请CIRCUIT FOR PROTECTING ELECTRICAL AND/OR ELECTRONIC SYSTEM BY USING ABRUPT METAL-INSULATOR TRANSITION DEVICE AND ELECTRICAL AND/OR ELECTRONIC SYSTEM COMPRISING THE CIRCUIT 审中-公开用于保护电气和/或电子系统的电路通过使用金属绝缘体过渡装置和包含电路的电气和/或电子系统公开(公告)号：US20100134936A1
公开(公告)日：2010-06-03
申请号：US11816732
申请日：2006-02-17
Applicant: Hyun-Tak Kim , Kwang-Yong Kang , Byung-Gyu Chae , Bong-jun Kim , Sun-jin Yun , Yong-wook Lee , Gyung-Ock Kim , Doo-Hyeb Youn , Jung-Wook Lim
Inventor： Hyun-Tak Kim , Kwang-Yong Kang , Byung-Gyu Chae , Bong-jun Kim , Sun-jin Yun , Yong-wook Lee , Gyung-Ock Kim , Doo-Hyeb Youn , Jung-Wook Lim
CPC classification number: H01L49/003 , H01L27/0248
Abstract: Provided are an electrical and/or electronic system protecting circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove high-frequency noise with a voltage greater than a rated standard voltage received via a power line or a signal line of an electrical and/or electronic system, and the electrical and/or electronic system including the electrical and/or electronic system protecting circuit. The abrupt MIT device of the electrical and/or electronic system protecting circuit abrupt is connected in parallel to the electrical and/or electronic system to be protected from the noise. The electrical and/or electronic system protecting circuit bypasses toward the abrupt MIT device most of the noise current generated when the voltage greater than the rated standard voltage is applied, thereby protecting the electrical and/or electronic system.
Abstract translation: 提供了使用突变金属 - 绝缘体转变（MIT）装置的电和/或电子系统保护电路，其可以以大于经由电力线或信号线接收的额定标准电压的电压有效地去除高频噪声 电气和/或电子系统，以及包括电气和/或电子系统保护电路的电气和/或电子系统。 电气和/或电子系统保护电路突然的MIT设备突然连接到电气和/或电子系统以防止噪声。 当施加大于额定标准电压的电压时，电气和/或电子系统保护电路绕过突然的MIT设备，大部分噪声电流产生，从而保护电气和/或电子系统。
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