Dual-column-parallel CCD sensor and inspection systems using a sensor

    公开(公告)号:US10313622B2

    公开(公告)日:2019-06-04

    申请号:US15337604

    申请日:2016-10-28

    Abstract: A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.

    Apparatus for High-Speed Imaging Sensor Data Transfer

    公开(公告)号:US20180059033A1

    公开(公告)日:2018-03-01

    申请号:US15671729

    申请日:2017-08-08

    Abstract: An imaging sensor assembly includes at least one substrate including a plurality of substrate signal lines. The imaging sensor assembly also includes at least one imaging sensor package disposed on the at least one substrate, the at least one imaging sensor package including at least one imaging sensor disposed on at least one imaging sensor package substrate. The imaging sensor assembly also includes at least one receiver package disposed on the at least one substrate, the receiver package including at least one receiver integrated circuit disposed on at least one receiver package substrate. The imaging sensor assembly also includes at least one electrical interconnect operably coupled to the at least one imaging sensor package and the at least one receiver package. A plurality of data signals are transmitted between the at least one imaging sensor package and the at least one receiver package via the at least one electrical interconnect.

    Scanning Electron Microscope And Methods Of Inspecting And Reviewing Samples

    公开(公告)号:US20170329025A1

    公开(公告)日:2017-11-16

    申请号:US15667500

    申请日:2017-08-02

    Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

    Low-noise sensor and an inspection system using a low-noise sensor
    27.
    发明授权
    Low-noise sensor and an inspection system using a low-noise sensor 有权
    低噪声传感器和使用低噪声传感器的检测系统

    公开(公告)号:US09347890B2

    公开(公告)日:2016-05-24

    申请号:US14273424

    申请日:2014-05-08

    Abstract: A method of inspecting a sample at high speed includes directing and focusing radiation onto a sample, and receiving radiation from the sample and directing received radiation to an image sensor. Notably, the method includes driving the image sensor with predetermined signals. The predetermined signals minimize a settling time of an output signal of the image sensor. The predetermined signals are controlled by a phase accumulator, which is used to select look-up values. The driving can further include loading an initial phase value, selecting most significant bits of the phase accumulator, and converting the look-up values to an analog signal. In one embodiment, for each cycle of a phase clock, a phase increment can be added to the phase accumulator. The driving can be performed by a custom waveform generator.

    Abstract translation: 高速检查样品的方法包括将辐射引导和聚焦到样品上,并且接收来自样品的辐射并将接收的辐射引导到图像传感器。 值得注意的是,该方法包括以预定信号驱动图像传感器。 预定信号最小化图像传感器的输出信号的建立时间。 预定信号由相位累加器控制,该相位累加器用于选择查找值。 驱动还可以包括加载初始相位值,选择相位累加器的最高有效位,以及将查找值转换为模拟信号。 在一个实施例中,对于相位时钟的每个周期,相位增量可以被加到相位累加器。 驱动可由自定义波形发生器执行。

    Interposer based imaging sensor for high-speed image acquisition and inspection systems
    28.
    发明授权
    Interposer based imaging sensor for high-speed image acquisition and inspection systems 有权
    基于内插器的成像传感器,用于高速图像采集和检测系统

    公开(公告)号:US09299738B1

    公开(公告)日:2016-03-29

    申请号:US14299749

    申请日:2014-06-09

    Abstract: The present invention includes an interposer disposed on a surface of a substrate, a light sensing array sensor disposed on the interposer, the light sensing array sensor being back-thinned and configured for back illumination, the light sensing array sensor including columns of pixels, one or more amplification circuitry elements configured to amplify an output of the light sensing array sensor, the amplification circuits being operatively connected to the interposer, one or more analog-to-digital conversion circuitry elements configured to convert an output of the light sensing array sensor to a digital signal, the ADC circuitry elements being operatively connected to the interposer, one or more driver circuitry elements configured to drive a clock or control signal of the array sensor, the interposer configured to electrically couple at least two of the light sensing array sensor, the amplification circuits, the conversion circuits, the driver circuits, or one or more additional circuits.

    Abstract translation: 本发明包括设置在基板的表面上的插入器,设置在插入件上的光感测阵列传感器,光感测阵列传感器被背面薄化并被配置为用于背光照明,光感测阵列传感器包括像素列,一 或多个放大电路元件,被配置为放大光感测阵列传感器的输出,放大电路可操作地连接到插入器,一个或多个模拟 - 数字转换电路元件,被配置为将光感测阵列传感器的输出转换成 数字信号,所述ADC电路元件可操作地连接到所述插入器,配置成驱动所述阵列传感器的时钟或控制信号的一个或多个驱动器电路元件,所述插入器被配置为电耦合所述光感测阵列传感器中的至少两个, 放大电路,转换电路,驱动器电路或一个或多个附加电路 电话

    Anti-Reflection Layer For Back-Illuminated Sensor
    30.
    发明申请
    Anti-Reflection Layer For Back-Illuminated Sensor 有权
    背照射传感器防反射层

    公开(公告)号:US20150200216A1

    公开(公告)日:2015-07-16

    申请号:US14591325

    申请日:2015-01-07

    CPC classification number: H01L27/1462 H01L27/1464 H01L27/14685 H01L27/14687

    Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

    Abstract translation: 用于短波长光的图像传感器包括半导体膜,形成在半导体膜的一个表面上的电路元件和在半导体膜的另一个表面上的纯硼层。 在纯硼层的顶部形成防反射层或保护层。 该图像传感器具有高效率和良好的稳定性,即使在高通量下连续使用多年。 图像传感器可以使用CCD(电荷耦合器件)或CMOS(互补金属氧化物半导体)技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。

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