公开(公告)号：US20100183045A1

公开(公告)日：2010-07-22

申请号：US12452809

申请日：2008-07-22

申请人： Ken Nakahara ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

发明人： Ken Nakahara ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

IPC分类号： G01J5/00

CPC分类号： G01J5/08 ,  C23C14/08 ,  C23C14/086 ,  C23C14/541 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/0875 ,  G01J2005/0048 ,  G01J2005/0081 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02554

摘要： A substrate temperature measuring apparatus includes: a heating source that heat a substrate; a transmission window that transmits therethrough an infrared ray in a range of a wavelength at which the infrared ray cannot transmit through the substrate; and a temperature-measuring instrument having a sensitivity range including the range of the wavelength, and measuring a substrate temperature of the substrate by analyzing an infrared ray radiated from the substrate heated by the heating source and having transmitted through the transmission window.

摘要翻译： 基板温度测量装置包括：加热基板的加热源; 透射窗，其透过红外线不能透过基板的波长范围内的红外线; 以及温度测量仪器，其具有包括波长范围的灵敏度范围，并且通过分析从由所述加热源加热并已透射通过透射窗的衬底辐射的红外线来测量衬底的衬底温度。

公开(公告)号：US08247793B2

公开(公告)日：2012-08-21

申请号：US12664397

申请日：2008-06-13

申请人： Ken Nakahara ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

发明人： Ken Nakahara ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/08 ,  H01L29/10 ,  H01L29/12

CPC分类号： H01L29/7813 ,  H01L21/02403 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02507 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02579 ,  H01L21/02631 ,  H01L29/155 ,  H01L29/225 ,  H01L33/04 ,  H01L33/06 ,  H01L33/28

摘要： Provided are a ZnO-based thin film and a ZnO-based semiconductor device which allow: reduction in a burden on a manufacturing apparatus; improvement of controllability and reproducibility of doping; and obtaining p-type conduction without changing a crystalline structure. In order to be formed into a p-type ZnO-based thin film, a ZnO-based thin film is formed by employing as a basic structure a superlattice structure of a MgZnO/ZnO super lattice layer 3. This superlattice component is formed with a laminated structure which includes acceptor-doped MgZnO layers 3b and acceptor-doped ZnO layers 3a. Hence, it is possible to improve controllability and reproducibility of the doping, and to prevent a change in a crystalline structure due to a doping material.

摘要翻译： 提供了一种ZnO基薄膜和一种ZnO基半导体器件，其允许：减少制造装置的负担; 改善掺杂的可控性和再现性; 并获得p型导电而不改变晶体结构。 为了形成p型ZnO系薄膜，通过以MgZnO / ZnO超晶格层3的超晶格结构为基本结构，形成ZnO系薄膜。该超晶格部件形成为 层状结构，其包括受主掺杂的MgZnO层3b和受主掺杂的ZnO层3a。 因此，可以提高掺杂的可控性和再现性，并且可以防止掺杂材料引起的晶体结构的变化。

公开(公告)号：US20100237343A1

公开(公告)日：2010-09-23

申请号：US12675783

申请日：2008-08-27

申请人： Ken Nakahara ,  Hiroyuki Yuki ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohmoto ,  Atsushi Tsukazaki

发明人： Ken Nakahara ,  Hiroyuki Yuki ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohmoto ,  Atsushi Tsukazaki

IPC分类号： H01L29/22

CPC分类号： C23C14/08 ,  C30B23/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02579 ,  H01L33/16 ,  H01L33/28

摘要： Provided are a ZnO-based thin film which is inhibited from being doped with an unintentional impurity, and a semiconductor device. The ZnO-based thin film has a main surface: which is formed of MgxZn1-xO (0≦x

摘要翻译： 提供了抑制非掺杂杂质的ZnO类薄膜和半导体器件。 ZnO系薄膜的主表面由含有p型杂质的Mg x Zn 1-x O（0＆nlE; x <1）形成; 并且当用原子力显微镜观察主表面时满足以下条件中的至少一个：观察到的六边形凹坑的密度不大于5×10 6个凹坑/ cm 2; 并且在主表面中没有发现凹陷部分，其包括形成在凹陷部分的底部中的多个微晶突起。

公开(公告)号：US08941105B2

公开(公告)日：2015-01-27

申请号：US11886918

申请日：2006-03-23

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L29/10 ,  H01S5/327 ,  H01L33/28 ,  H01L21/02 ,  H01L33/16 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223

CPC分类号： H01S5/327 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/02631 ,  H01L33/16 ,  H01L33/28 ,  H01S5/0422 ,  H01S5/2224 ,  H01S5/2231

摘要： There is provided a semiconductor light emitting device in which light emitting efficiency is totally improved in case of emitting a light having a short wavelength of 400 nm or less by raising internal quantum efficiency by enhancing crystallinity of semiconductor layers laminated and by raising external quantum efficiency by taking out the light emitted by preventing the light emitted from being absorbed in the substrate or the like, as much as possible. In case of laminating ZnO compound semiconductor layers (2 to 6) so as to form a light emitting layer forming portion (7) for emitting the light having a wavelength of 400 nm or less on a substrate (1), a substrate composed of MgxZn1-xO (0≦x≦0.5) is used as the substrate (1).

摘要翻译： 提供了一种半导体发光器件，其中通过提高层叠的半导体层的结晶度并通过提高外部量子效率来提高内部量子效率，并且通过提高外部量子效率来发射具有400nm或更小的短波长的光的发光效率得到全面改善 通过防止发射的光被吸收在基板等中而发出的光被尽可能多地取出。 在层叠ZnO化合物半导体层（2〜6）以在基板（1）上形成发光波长为400nm以下的光的发光层形成部（7）的情况下，将由Mg x Zn 1 -xO（0＆nlE; x＆nlE; 0.5）用作衬底（1）。

公开(公告)号：US20120022382A1

公开(公告)日：2012-01-26

申请号：US13179814

申请日：2011-07-11

申请人： Niwa Daisuke ,  Koji Terumoto ,  Kazuhiro Oguchi ,  Masahide Tanaka ,  Ken Nakahara

发明人： Niwa Daisuke ,  Koji Terumoto ,  Kazuhiro Oguchi ,  Masahide Tanaka ,  Ken Nakahara

IPC分类号： A61B5/02

CPC分类号： A61B5/002 ,  A61B5/0022 ,  A61B5/02416 ,  A61B5/14551 ,  A61B5/164 ,  A61B5/165 ,  A61B5/4815 ,  A61B5/6802 ,  A61B5/6826 ,  A61B2503/10 ,  A61B2503/12 ,  A61B2503/40 ,  A61B2505/07

摘要： A wireless plethysmogram sensor unit is capable of obtaining a plethysmogram from a living tissue of a measuring object and of transmitting the plethysmogram to a processing unit outside the wireless plethysmogram sensor unit. The sensor unit includes a light source to emit measuring light into the living tissue and a light receiving element to receive light emerging from the tissue, which is accompanied by pulsation caused by absorption by arteries in the tissue. A memory stores a plethysmogram obtained in accordance with the light received by the light receiving element. A short range wireless communicator transmits the plethysmogram to the processing unit. A power source provides power to other elements in the sensor unit, and a controller controls the elements of the sensor unit.

摘要翻译： 无线体积描记传感器单元能够从测量对象的生物体组织获取体积图，并将体积图传送到无线体积描记传感器单元外部的处理单元。 传感器单元包括用于将测量光发射到生物体组织中的光源和用于接收从组织出射的光的光接收元件，其伴随着由组织中的动脉的吸收引起的脉动。 存储器存储根据由光接收元件接收的光获得的体积图。 短距离无线通信器将体积图传送到处理单元。 电源为传感器单元中的其他元件提供电力，并且控制器控制传感器单元的元件。

公开(公告)号：US07948003B2

公开(公告)日：2011-05-24

申请号：US12177090

申请日：2008-07-21

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L33/42

CPC分类号： H01L33/42

摘要： In order to emit a light from an electrode side, in semiconductor light emitting devices such as LED and the like, and liquid crystal, the electrode is formed of a transparent material so as to transmit a light through the transparent electrode and exit the light. A ZnO, which constitutes a material for the transparent electrode, is subject to erosion by acid and alkali, thus, as the case may cause loss of a reliability of the electrode under the influence of ion-containing moisture. In order to solve such a problem, this invention has as its aim a transparent electrode film provided with stability capable of preventing any degradation under the influence of any ion-containing moisture, while being kept acid-proof and alkali-proof. In order to accomplish the above-mentioned aim, this invention provides a transparent electrode made up of a ZnO as its main material, wherein its surface is covered with a Mg-doped ZnO film.

摘要翻译： 为了从电极侧发出光，在诸如LED等的半导体发光器件和液晶中，电极由透明材料形成，以便透过透明电极发出光并离开光。 构成透明电极的材料的ZnO被酸碱侵蚀，因此在离子含水分的影响的情况下可能导致电极的可靠性降低。 为了解决这个问题，本发明的目的是提供具有稳定性的透明电极膜，其能够在保持耐酸碱性的同时防止在任何含离子的水分的影响下的任何劣化。 为了实现上述目的，本发明提供一种由ZnO作为其主要材料的透明电极，其表面被掺杂了Mg的ZnO膜覆盖。

公开(公告)号：US20100224892A1

公开(公告)日：2010-09-09

申请号：US12223172

申请日：2007-01-23

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L33/46

CPC分类号： H01L33/10 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44

摘要： Provided is a nitride semiconductor light emitting element that has improved light extraction efficiency and a wide irradiation angle of outgoing light irrespective of the reflectance of a metal used for an electrode. An n side anti-reflection layer 2 and a p side Bragg reflection layer 4 are formed so as to sandwich an MQW active layer 3 that serves as a light emitting region, and the nitride semiconductor light emitting element has a double hetero structure. On top of the n side anti-reflection layer 2, an n electrode 1 is formed. Meanwhile, at the lower side of the p side Bragg reflection layer 4, a p electrode 5, a reflection film 7, and a pad electrode 8 are formed, and the pad electrode is bonded to a support substrate 10 with a conductive bonding layer 9 interposed in between. Both the n side anti-reflection layer 2 and the p side Bragg reflection layer 4 also serve as contact layers. The n side anti-reflection layer 2 is disposed on the light-extracting-direction side while the p side Bragg reflection layer 4 is disposed on the opposite side to the light-extracting-direction side. Consequently, the light extraction efficiency is improved.

摘要翻译： 提供了与用于电极的金属的反射率无关的具有提高的光提取效率和出射光的宽的照射角的氮化物半导体发光元件。 形成n侧防反射层2和p侧布拉格反射层4，以夹持用作发光区域的MQW有源层3，并且氮化物半导体发光元件具有双异质结构。 在n侧防反射层2的顶部，形成n电极1。 同时，在p侧布拉格反射层4的下侧形成有p电极5，反射膜7和焊盘电极8，并且将焊盘电极与导电接合层9插入的支撑基板10接合 之间。 n侧防反射层2和p侧布拉格反射层4也用作接触层。 n侧防反射层2设置在取光方向侧，而p侧布拉格反射层4设置在与光提取方向相反的一侧。 因此，光提取效率提高。

公开(公告)号：US07718450B2

公开(公告)日：2010-05-18

申请号：US11920043

申请日：2006-05-08

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L21/00

CPC分类号： H01L33/0095 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/268 ,  H01L29/66462 ,  H01L33/305

摘要： There is provided a method for manufacturing a nitride semiconductor device which has a p-type nitride semiconductor layer having a high carrier concentration (low resistance) by activating an acceptor without raising a problem of forming nitrogen vacancies which are generated when a high temperature annealing is carried out over an extended time. A semiconductor lamination portion (6) made of nitride semiconductor is formed on a substrate (1) so as to form a light emitting layer, and irradiated by a laser beam having a wavelength λ of λ=h·c/E or less (E is energy capable of separating off the bonding between Mg and H) from the front surface side of the semiconductor lamination portion. Then, a heat treatment is carried out at a temperature of 300 to 400° C. And, similarly to a process for normal nitride semiconductor LED, a light transmitting conductive layer (7) is provided, an n-side electrode (9) is formed on an n-type layer (3) exposed by removing a part of the semiconductor lamination portion by etching, and a p-side electrode (8) is formed on a surface of the light transmitting conductive layer, thereby a LED is obtained.

摘要翻译： 提供了一种通过激活受主而具有具有高载流子浓度（低电阻）的p型氮化物半导体层的氮化物半导体器件的制造方法，而不会产生当高温退火时产生的形成氮空位的问题 进行了漫长的时间。 在基板（1）上形成由氮化物半导体构成的半导体层叠部（6），形成发光层，用波长λ为λ= h·c / E以下的激光（E 是能够分离Mg和H）之间的结合的能量与半导体层叠部分的前表面侧。 然后，在300〜400℃的温度下进行热处理。与普通氮化物半导体LED的工序相同，设置透光导电层（7），n侧电极（9）为 形成在通过蚀刻去除一部分半导体层叠部分而露出的n型层（3）上，并且在透光导电层的表面上形成p侧电极（8），由此获得LED。

公开(公告)号：US20090078934A1

公开(公告)日：2009-03-26

申请号：US11886918

申请日：2006-03-23

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L33/00

CPC分类号： H01S5/327 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/02631 ,  H01L33/16 ,  H01L33/28 ,  H01S5/0422 ,  H01S5/2224 ,  H01S5/2231

摘要： There is provided a semiconductor light emitting device in which light emitting efficiency is totally improved in case of emitting a light having a short wavelength of 400 nm or less by raising internal quantum efficiency by enhancing crystallinity of semiconductor layers laminated and by raising external quantum efficiency by taking out the light emitted by preventing the light emitted from being absorbed in the substrate or the like, as much as possible. In case of laminating ZnO compound semiconductor layers (2 to 6) so as to form a light emitting layer forming portion (7) for emitting the light having a wavelength of 400 nm or less on a substrate (1), a substrate composed of MgxZn1-xO (0≦x≦0.5) is used as the substrate (1).

摘要翻译： 提供了一种半导体发光器件，其中通过提高层叠的半导体层的结晶度并通过提高外部量子效率来提高内部量子效率，并且通过提高外部量子效率来发射具有400nm或更小的短波长的光的发光效率得到全面改善 通过防止发射的光被吸收在基板等中而发出的光被尽可能多地取出。 在层叠ZnO化合物半导体层（2〜6）以在基板（1）上形成发光波长为400nm以下的光的发光层形成部（7）的情况下，将由Mg x Zn 1 -xO（0 <= x <= 0.5）用作衬底（1）。

公开(公告)号：US20080073659A1

公开(公告)日：2008-03-27

申请号：US11662097

申请日：2005-09-07

申请人： Kentaro Tamura ,  Ken Nakahara

发明人： Kentaro Tamura ,  Ken Nakahara

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/405

摘要： A semiconductor light emitting device is provided, in which the light emitting efficiency of a LED is improved. A semiconductor light emitting device (11) includes a light emitting layer (16) made of a GaN-based semiconductor sandwiched with an n-type GaN-based semiconductor layer (17) and a p-type GaN-based semiconductor layer (15), and a ZnO-based or an ITO transparent electrode layer (14). Further, a value of an equation represented by 3t/(A/π)1/2−3(t/(A/π)1/2)2+(t/(A/π)1/2)3 is 0.1 or more, where a thickness of the transparent electrode layer is represented by t and an area of the light emitting layer (light emitting area) of the light emitting device (11) is represented by A. The light emitting efficiency is improved using the transparent electrode layer (14) having an optimum thickness to the light emitting area.

摘要翻译： 提供了一种提高了LED的发光效率的半导体发光器件。 半导体发光器件（11）包括由夹在n型GaN基半导体层（17）和p型GaN基半导体层（15）之间的GaN基半导体制成的发光层（16） ，以及ZnO系或ITO透明电极层（14）。 此外，由3t /（A / pi）×1 / 3-3（t /（A / pi）1/2）表示的等式的值 2 +（t /（A / pi）1/2）3 3以上，透明电极层的厚度为t 并且发光器件（11）的发光层（发光区域）的面积由A表示。使用对于发光区域具有最佳厚度的透明电极层（14）来提高发光效率。