公开(公告)号：US20070298210A1

公开(公告)日：2007-12-27

申请号：US11667633

申请日：2005-11-10

申请人： Kohei Kawamura ,  Sohei Nishida ,  Takahiro Omoto

发明人： Kohei Kawamura ,  Sohei Nishida ,  Takahiro Omoto

IPC分类号： D03D27/00 ,  D01F6/40 ,  D06B1/00 ,  D01F6/54

CPC分类号： D01F6/40 ,  D01F6/38 ,  D01F6/54 ,  D03D27/00 ,  D06C23/04 ,  D06P3/76 ,  D06P5/2077 ,  Y10T428/23986

摘要： A step pile fabric according to the present invention contains a non-shrinkable fiber, and a shrinkable fiber containing a modacrylic copolymer. A composition of the shrinkable fiber containing the modacrylic copolymer contains a polymer composition obtained by mixing i) 60 to 99 parts by weight of a copolymer (A) containing 35 wt % to 98 wt % of acrylonitrile, and 2 wt % to 65 wt % of a total amount of 0.5 wt % to 5.0 wt % of a sulfonic-group-containing monomer and other vinyl monomer, and ii) 1 to 40 parts by weight of a copolymer (B) containing 0 wt % to 90 wt % of acrylonitrile, 2 wt % to 40 wt % of a sulfonic-group-containing monomer, and 0 wt % to 80 wt % of other vinyl monomer containing no halogen. A dry heat shrinkage S of the shrinkable fiber at 130° C. for 5 minutes after dyeing is 15% to 40%. In this way, by performing dyeing using a cationic dye in a low-temperature region so as to suppress shrinkage during dyeing and performing a dry heat treatment after dyeing, a pile fabric with large height difference is provided.

摘要翻译： 根据本发明的阶绒布织物包含不可收缩纤维和含有改性丙烯酸共聚物的可收缩纤维。 含有改性丙烯酸共聚物的收缩性纤维的组合物含有通过混合i）60〜99重量份含有35重量％〜98重量％丙烯腈的共聚物（A）和2重量％〜65重量％ 的总量为0.5重量％至5.0重量％的含磺酸基单体和其它乙烯基单体，和ii）1至40重量份含有0重量％至90重量％丙烯腈的共聚物（B） ，2重量％至40重量％的含磺酸基单体和0重量％至80重量％的不含卤素的其它乙烯基单体。 可收缩纤维在130℃下染色5分钟的干热收缩率为15％〜40％。 以这种方式，通过在低温区域中使用阳离子染料进行染色，以抑制染色时的收缩和染色后进行干热处理，提供高差大的绒头织物。

公开(公告)号：US20070160757A1

公开(公告)日：2007-07-12

申请号：US11717183

申请日：2007-03-13

申请人： Tadahiro Ishizaka ,  Hiroshi Kannan ,  Yasuhiko Kojima ,  Takashi Shigeoka ,  Yasuhiro Oshima ,  Kohei Kawamura

发明人： Tadahiro Ishizaka ,  Hiroshi Kannan ,  Yasuhiko Kojima ,  Takashi Shigeoka ,  Yasuhiro Oshima ,  Kohei Kawamura

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4412

摘要： In a processing apparatus which performs a film deposition by alternately supplying a plurality of source gases, the source gases are prevented from reacting within an exhaust pipe so as to prevent the exhaust pipe from clogging due to a reaction by-product. A gas supply to a processing container is switched between a TiCl4 supply system and a NH3 supply system. Additionally, a gas exhaust from the processing container is switched between a TiCl4 exhaust system and a NH3 exhaust system. The gas exhaust is switched to the TiCl4 exhaust system when the gas supply is switched to the TiCl4 supply system, and the gas exhaust is switched to the NH3 exhaust system when the gas supply is switched to the NH3 supply system. The switching is performed by a stop valve provided to each of the supply system and the exhaust system.

摘要翻译： 在通过交替供给多个源气体进行膜沉积的处理装置中，防止源气体在排气管内发生反应，以防止排气管因反应副产物而堵塞。 供给到处理容器的气体在TiCl 4供应系统和NH 3供应系统之间切换。 此外，来自处理容器的排气在TiCl 4排气系统和NH 3排气系统之间切换。 当气体供应切换到TiCl 4供应系统时，排气被切换到TiCl 4排气系统，并且排气被切换到NH 3 3气体供应系统切换到NH 3供应系统时。 通过设置在供给系统和排气系统中的每一个的截止阀进行切换。

公开(公告)号：US07186806B2

公开(公告)日：2007-03-06

申请号：US10451398

申请日：2001-12-21

申请人： Takashi Ueda ,  Takeshi Chiba ,  Kohei Kawamura

发明人： Takashi Ueda ,  Takeshi Chiba ,  Kohei Kawamura

IPC分类号： A61K38/17 ,  A61K9/70

CPC分类号： D06M11/57 ,  D06M11/17 ,  D06M11/38 ,  D06M11/45 ,  D06M11/56 ,  D06M13/11

摘要： The present invention relates to a process for preparing regenerated collagen fiber which comprises treating regenerated collagen fiber with a monofunctional epoxy compound and a metal aluminum salt, in which treatment with the monofunctional epoxy compound initiated by adding sodium hydroxide to become 0.001 to 0.8 N based on the treatment solution and inorganic salt in an amount so that water absorption of the obtained regenerated collagen fiber becomes at most 100%, depending on amount of sodium hydroxide added. Also, the present invention relates to a process for setting regenerated collagen fiber obtained by the above process which comprises thermally setting the fiber by means of wet heat treatment at 50° to 160° C. and drying treatment at 20° to 220° C.

摘要翻译： 本发明涉及一种制备再生胶原纤维的方法，其包括用单官能环氧化合物和金属铝盐处理再生胶原纤维，其中基于通过加入氢氧化钠引发的单官能环氧化合物为0.001至0.8N，基于 处理溶液和无机盐的量使得所得到的再生胶原纤维的吸水量根据加入的氢氧化钠的量变为100％以下。 此外，本发明涉及一种通过上述方法获得的再生胶原纤维的设置方法，其包括通过在50℃至160℃的湿热处理将所述纤维热定型并在20℃至220℃进行干燥处理。

公开(公告)号：US5290609A

公开(公告)日：1994-03-01

申请号：US848019

申请日：1992-03-09

申请人： Yasuhiro Horiike ,  Kohei Kawamura

发明人： Yasuhiro Horiike ,  Kohei Kawamura

IPC分类号： H01L27/04 ,  C23C16/18 ,  C23C16/34 ,  C23C16/56 ,  H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  B05D3/06

CPC分类号： H01L28/40 ,  C23C16/18 ,  C23C16/345 ,  C23C16/56 ,  H01L21/31683

摘要： A dielectric film of a capacitor is formed using the plasma CVD apparatus. A thin Ta layer is deposited on a semiconductor wafer by using Ta(N(CH.sub.3).sub.2).sub.5 gas and H.sub.2 radicals. The thin Ta layer is then oxidized by O.sub.2 radicals to form a thin Ta.sub.2 O.sub.5 layer. An Si.sub.3 N.sub.4 layer is then formed on the Ta.sub.2 O.sub.5 layer by using SiH.sub.4 and NH.sub.3 gases. The Ta.sub.2 O.sub.5 layer and the Si.sub.3 N.sub.4 layer are alternately laminated one upon the other several times to form a dielectric film of laminated structure. The dielectric film can thus have a composition close to the stoichiometric composition and it can be made high in dielectric constant and excellent in withstand voltage.

摘要翻译： 使用等离子体CVD装置形成电容器的电介质膜。 通过使用Ta（N（CH 3）2）5气体和H 2自由基，在半导体晶片上沉积薄的Ta层。 然后，薄的Ta层被氧自由基氧化以形成薄的Ta 2 O 5层。 然后通过使用SiH 4和NH 3气体在Ta 2 O 5层上形成Si 3 N 4层。 将Ta 2 O 5层和Si 3 N 4层交替层叠一次，形成层叠结构的电介质膜。 因此，电介质膜可以具有接近化学计量组成的组成，并且可以使其介电常数高，耐电压优异。

公开(公告)号：US5028791A

公开(公告)日：1991-07-02

申请号：US486256

申请日：1990-02-28

申请人： Akira Koshiishi ,  Kohei Kawamura ,  Masahiko Matsudo ,  Naoki Takayama

发明人： Akira Koshiishi ,  Kohei Kawamura ,  Masahiko Matsudo ,  Naoki Takayama

IPC分类号： H01J27/08 ,  H01J27/20

CPC分类号： H01J27/08 ,  H01J27/20

摘要： An electron beam excitation ion source comprises a housing having an ion generation chamber therein. A discharge gas and an accelerated electrons are introduced into the ion generation chamber, causing the accelerated electrons to collide against the discharge gas to generate a plasma containing ions in the ion generation chamber. The housing includes an ion extraction port through which the ions are extracted from the ion generation chamber outside the housing and an electron reflecting member exposed in the ion generation chamber to reflect the electrons.

摘要翻译： 电子束激发离子源包括其中具有离子产生室的壳体。 放电气体和加速的电子被引入到离子产生室中，导致加速的电子与放电气体碰撞，以产生离子产生室中含有离子的等离子体。 壳体包括离子提取端口，离子从壳体外部的离子产生室提取出来，而电子反射部件暴露在离子产生室中以反射电子。

公开(公告)号：US09177846B2

公开(公告)日：2015-11-03

申请号：US12526460

申请日：2008-02-04

申请人： Kohei Kawamura ,  Yasuo Kobayashi ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

发明人： Kohei Kawamura ,  Yasuo Kobayashi ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

IPC分类号： H01L21/3065 ,  C23C16/513 ,  H01L21/683 ,  C23C16/458 ,  H01L21/687

CPC分类号： H01L21/68742 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/6875

摘要： Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

摘要翻译： 提供一种保持台结构，其保持基板并且设置在真空可抽真空的处理室中，并且允许在其中对基板进行预定的处理。 保持台结构包括：放置基板的保持台体; 升降销机构，其使保持台体上的基板降低，或者使保持台体上升基板; 以及形成在保持台体上的台阶部分，使得放置在保持台体上的基板的后表面的周边部分暴露于供给到处理室中的处理气体。

公开(公告)号：US08124523B2

公开(公告)日：2012-02-28

申请号：US12531519

申请日：2008-03-28

申请人： Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L21/3213 ,  H01L23/485

CPC分类号： H01L21/31144 ,  C23C16/26 ,  H01L21/02074 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/3127 ,  H01L21/76808 ,  H01L21/76883 ,  Y10S438/951

摘要： A method for fabricating a semiconductor device includes the steps of (a) forming a plasma of a gas having carbon and fluorine, and forming an internal insulation film provided with a fluorine-doped carbon film formed on a substrate using the plasma; (b) forming a metal film on the internal insulation film; (c) etching the metal film according to a pattern to form a hard mask; (d) forming a concave part in the fluorine-doped carbon film by etching the fluorine-doped carbon film using the hard mask; (e) forming a film formation of a wiring material on the substrate for filling the concave part with the wiring material; (f) removing an excess part of the wiring material and the hard mask on the fluorine-doped carbon film for exposing a surface of the fluorine-doped carbon film; and (g) removing an oxide formed on the surface of the fluorine-doped film.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：（a）形成具有碳和氟的气体的等离子体，以及使用等离子体形成在基板上形成的氟掺杂碳膜的内部绝缘膜; （b）在内部绝缘膜上形成金属膜; （c）根据图案蚀刻金属膜以形成硬掩模; （d）通过使用硬掩模蚀刻氟掺杂碳膜，在氟掺杂碳膜中形成凹部; （e）在所述基板上形成布线材料，以用所述布线材料填充所述凹部; （f）除去氟掺杂碳膜上的布线材料和硬掩模的多余部分，以暴露氟掺杂碳膜的表面; 和（g）去除在氟掺杂膜的表面上形成的氧化物。

公开(公告)号：US07717061B2

公开(公告)日：2010-05-18

申请号：US11232943

申请日：2005-09-23

申请人： Tadahiro Ishizaka ,  Naoki Yoshii ,  Kohei Kawamura ,  Yukio Fukuda ,  Takashi Shigeoka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Junichi Arami ,  Atsushi Gomi

发明人： Tadahiro Ishizaka ,  Naoki Yoshii ,  Kohei Kawamura ,  Yukio Fukuda ,  Takashi Shigeoka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Junichi Arami ,  Atsushi Gomi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  F16K11/065 ,  F16K11/085 ,  F16K11/074 ,  F16K3/08 ,  F16K47/04

CPC分类号： C23C16/45542 ,  C23C16/34 ,  C23C16/452 ,  C23C16/45561 ,  Y10T137/86558 ,  Y10T137/86566 ,  Y10T137/86638 ,  Y10T137/86726 ,  Y10T137/86743 ,  Y10T137/86751 ,  Y10T137/86871

摘要： A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).

摘要翻译： 公开了能够在连续地形成还原气体的等离子体的同时交替地切换原料气体和还原气体的供给的处理装置。 励磁装置（12）激发供给到其中的还原气体，并将被激发的还原气体供给到处理室（2）。 在励磁装置（12）和处理室（2）之间设置有切换机构（20），旁通管路（22）与切换机构（20）连接。 切换机构（20）切换来自处理室（2）和旁通管线（22）之间的激发装置（12）的被激发的还原气体的流动。

公开(公告)号：US20100117204A1

公开(公告)日：2010-05-13

申请号：US12452784

申请日：2008-07-24

申请人： Takaaki Matsuoka ,  Kohei Kawamura

发明人： Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H01L21/31

CPC分类号： H01L21/3148 ,  C23C16/0272 ,  C23C16/36 ,  C23C16/511 ,  H01L21/3185 ,  H01L21/76822 ,  H01L21/76829

摘要： The present invention may be a semiconductor device including of a fluorinated insulating film and a SiCN film deposited on the fluorinated insulating film directly, wherein a density of nitrogen in the SiCN film decreases from interface between the fluorinated insulating film and the SiCN film. In the present invention, the SiCN film that is highly fluorine-resistant near the interface with the CFx film and has a low dielectric constant as a whole can be formed as a hard mask.

摘要翻译： 本发明可以是包括直接沉积在氟化绝缘膜上的氟化绝缘膜和SiCN膜的半导体器件，其中SiCN膜中的氮密度从氟化绝缘膜和SiCN膜之间的界面减小。 在本发明中，作为硬掩模，可以形成与CFx膜的界面附近具有高介电常数的SiCN膜作为整体的低介电常数。

公开(公告)号：US07704893B2

公开(公告)日：2010-04-27

申请号：US10568461

申请日：2004-08-12

申请人： Yasuo Kobayashi ,  Kohei Kawamura ,  Tadahiro Ohmi ,  Akinobu Teramoto ,  Tatsuya Sugimoto ,  Toshiro Yamada ,  Kimiaki Tanaka

发明人： Yasuo Kobayashi ,  Kohei Kawamura ,  Tadahiro Ohmi ,  Akinobu Teramoto ,  Tatsuya Sugimoto ,  Toshiro Yamada ,  Kimiaki Tanaka

IPC分类号： H01L21/31

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3146

摘要： The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

摘要翻译： 本发明涉及一种半导体器件，其包括由经历420℃或更低的热历史的氟化碳膜构成的绝缘膜。 本发明的特征在于，在氟化碳膜经受热历史之前，包含在氟化碳膜中的氢原子数量为3原子％以下。