专利检索 ap:("Kuniharu Muto" OR "Toshiyuki Hata" OR "Hiroshi Sato" OR "Hiroi Oka" OR "Osamu Ikeda") AND inv:"Hiroshi Sato" 第 3 页

21.

发明授权
MOSFET package 失效

公开(公告)号：US07394146B2

公开(公告)日：2008-07-01

申请号：US11589849

申请日：2006-10-31

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L23/495 , H01L21/00 , H01R9/00

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

22.

发明授权
MOSFET package 有权

公开(公告)号：US07332757B2

公开(公告)日：2008-02-19

申请号：US11415291

申请日：2006-05-02

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L29/94 , H01L21/00 , H01R9/00

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

23.

发明申请
Semiconductor device 失效

公开(公告)号：US20070040249A1

公开(公告)日：2007-02-22

申请号：US11589849

申请日：2006-10-31

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

24.

发明授权
Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法

公开(公告)号：US06992386B2

公开(公告)日：2006-01-31

申请号：US10828262

申请日：2004-04-21

申请人： Toshiyuki Hata , Hiroshi Sato

发明人： Toshiyuki Hata , Hiroshi Sato

IPC分类号： H01L23/48 , H01L23/52 , H01L29/40

CPC分类号： H01L24/83 , H01L23/49562 , H01L24/11 , H01L24/13 , H01L24/33 , H01L2224/0401 , H01L2224/0558 , H01L2224/05624 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13144 , H01L2224/16245 , H01L2224/29111 , H01L2224/29139 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2224/83139 , H01L2224/8314 , H01L2224/83192 , H01L2224/838 , H01L2224/84138 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0781 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/0105 , H01L2924/00014 , H01L2924/3512 , H01L2924/00 , H01L2924/00012

摘要： A semiconductor device to prevent breakage of a semiconductor chip is disclosed. The device incorporates a sealing member, a semiconductor chip and having a source and gate electrodes on a first main surface and a drain electrode on a second main surface, a first electrode plate having an upper surface exposed to an upper surface of the sealing member and a lower surface exposed to a lower surface of the sealing member, and second electrode plates each having a lower surface exposed to the lower surface of the sealing member. The drain electrode of the chip is electrically connected to the drain electrode plate through an adhesive. Stud type bump electrodes are formed by gold wire on the source and gate electrodes and are covered with an electrically conductive adhesive. The bump electrode(s) and the source and gate electrode plates are electrically connected with each other through the adhesive.

摘要翻译： 公开了一种防止半导体芯片破损的半导体器件。该装置包括密封构件，半导体芯片，并且在第二主表面上的第一主表面和漏电极上具有源电极和栅电极，具有暴露于密封构件的上表面的上表面的第一电极板和暴露于密封构件的下表面的下表面和每个具有暴露于密封构件的下表面的下表面的第二电极板。芯片的漏电极通过粘合剂电连接到漏电极板。螺柱型突起电极由源极和栅电极上的金线形成，并被导电粘合剂覆盖。突起电极和源极和栅极电极板通过粘合剂彼此电连接。

25.

发明申请
Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法

公开(公告)号：US20050023670A1

公开(公告)日：2005-02-03

申请号：US10828262

申请日：2004-04-21

申请人： Toshiyuki Hata , Hiroshi Sato

发明人： Toshiyuki Hata , Hiroshi Sato

IPC分类号： H01L23/12 , H01L21/60 , H01L23/48 , H01L23/485 , H01L23/495 , H01L21/48

CPC分类号： H01L24/83 , H01L23/49562 , H01L24/11 , H01L24/13 , H01L24/33 , H01L2224/0401 , H01L2224/0558 , H01L2224/05624 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13144 , H01L2224/16245 , H01L2224/29111 , H01L2224/29139 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2224/83139 , H01L2224/8314 , H01L2224/83192 , H01L2224/838 , H01L2224/84138 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0781 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/0105 , H01L2924/00014 , H01L2924/3512 , H01L2924/00 , H01L2924/00012

摘要： A semiconductor device to prevent breakage of a semiconductor chip is disclosed. The device incorporates a sealing member, a semiconductor chip and having a source and gate electrodes on a first main surface and a drain electrode on a second main surface, a first electrode plate having an upper surface exposed to an upper surface of the sealing member and a lower surface exposed to a lower surface of the sealing member, and second electrode plates each having a lower surface exposed to the lower surface of the sealing member. The drain electrode of the chip is electrically connected to the drain electrode plate through an adhesive. Stud type bump electrodes are formed by gold wire on the source and gate electrodes and are covered with an electrically conductive adhesive. The bump electrode(s) and the source and gate electrode plates are electrically connected with each other through the adhesive.

摘要翻译： 公开了一种防止半导体芯片破损的半导体器件。该装置包括密封构件，半导体芯片，并且在第二主表面上的第一主表面和漏电极上具有源电极和栅电极，具有暴露于密封构件的上表面的上表面的第一电极板和暴露于密封构件的下表面的下表面和每个具有暴露于密封构件的下表面的下表面的第二电极板。芯片的漏电极通过粘合剂电连接到漏电极板。螺柱型突起电极由源极和栅电极上的金线形成，并被导电粘合剂覆盖。突起电极和源极和栅极电极板通过粘合剂彼此电连接。

26.

发明授权
Semiconductor device 失效

公开(公告)号：US06774466B1

公开(公告)日：2004-08-10

申请号：US09493080

申请日：2000-01-28

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H10L23495

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

27.

发明申请
SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件

公开(公告)号：US20120217556A1

公开(公告)日：2012-08-30

申请号：US13459839

申请日：2012-04-30

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L29/78

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device featuring a semiconductor chip having a first main surface and a second, opposing main surface and including a MOSFET having source and gate electrodes formed on the first main surface and a drain electrode thereof formed on the second main surface, first and second conductive members acting as lead terminals for the source and gate electrodes, respectively, are disposed over the first main surface, each of the first and second conductive members has a part overlapped with the chip in a plan view, a sealing body sealing the chip and parts of the first and second conductive members such that a part of the first conductive member is projected outwardly from a first side surface of the sealing body and parts of the first and second conductive members are projected outwardly from the opposing second side surface of the sealing body in a plan view.

摘要翻译： 一种具有半导体芯片的半导体器件，具有第一主表面和第二相对的主表面，并且包括形成在第一主表面上的源极和栅电极的MOSFET，以及形成在第二主表面上的漏电极，第一和第二导电作为源电极和栅电极的引线端子的部件分别设置在第一主表面上，第一和第二导电部件中的每一个在平面图中与芯片重叠，密封体密封芯片和部件的第一和第二导电构件，使得第一导电构件的一部分从密封体的第一侧表面向外突出，并且第一和第二导电构件的部分从密封体的相对的第二侧表面向外突出在平面图中。

28.

发明申请
Semiconductor packaging device comprising a semiconductor chip including a MOSFET 有权

公开(公告)号：US20080272472A1

公开(公告)日：2008-11-06

申请号：US12216363

申请日：2008-07-02

申请人： Toshiyuki Hata , Hiroshi Sato

发明人： Toshiyuki Hata , Hiroshi Sato

IPC分类号： H01L23/02

CPC分类号： H01L24/83 , H01L23/49562 , H01L24/11 , H01L24/13 , H01L24/33 , H01L2224/0401 , H01L2224/0558 , H01L2224/05624 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13144 , H01L2224/16245 , H01L2224/29111 , H01L2224/29139 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2224/83139 , H01L2224/8314 , H01L2224/83192 , H01L2224/838 , H01L2224/84138 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0781 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/0105 , H01L2924/00014 , H01L2924/3512 , H01L2924/00 , H01L2924/00012

摘要： A thin semiconductor device difficult to cause breakage of a semiconductor chip is disclosed. The semiconductor device comprises a sealing member, a semiconductor chip positioned within the sealing member, the semiconductor chip having a source electrode and a gate electrode on a first main surface thereof and a drain electrode on a second main surface as a back surface thereof, a first electrode plate (drain electrode plate) having an upper surface and a lower surface, a part of the upper surface of the first electrode plate being exposed to an upper surface of the sealing member and the lower surface portions of end portions of the first electrode plate being exposed to a lower surface of the sealing member, and second electrode plates (source electrode plate and gate electrode plate) each having a lower surface exposed to the lower surface of the sealing member and an upper surface positioned within the sealing member, wherein the drain electrode of the semiconductor chip is electrically connected to the drain electrode plate through an adhesive, one or plural stud type bump electrodes are formed by gold wire on the surface of each of the source electrode and gate electrode of the semiconductor chip, the bump electrode(s) being covered with an electrically conductive adhesive, the bump electrode(s) and the source and gate electrode plates are electrically connected with each other through the adhesive, and the bump electrode(s) and the source and gate electrode plates are not in contact with each other.