Abstract:
Embodiments provide a light emitting device package including a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes connected to the first and second conductive semiconductor layers, a first pad connected to the first electrodes in first-first through-holes penetrating the second conductive semiconductor layer and the active layer, and a first insulation layer disposed between the first pad and the second conductive semiconductor layer and between the first pad and the active layer to cover the first electrodes in a first-second through-hole, and a second pad connected to the second electrode through a second through-hole penetrating the first insulation layer and electrically spaced apart from the first pad. The second pad does not overlap the first insulation layer in the first-second through-hole in a thickness direction of the light emitting structure.
Abstract:
A light-emitting device package of embodiments comprises: a substrate; a light-emitting structure which is arranged below the substrate and comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first electrode which is connected to the first conductive type semiconductor layer; a first insulation layer which is arranged on the side section of the light-emitting structure and the side and lower sections of the first electrode; a first pad which passes through the first insulation layer and is connected to the first conductive type semiconductor layer; a second electrode which passes through the first insulation layer, the first conductive type semiconductor layer and the active layer and is connected to the second conductive type semiconductor layer; a second pad which is connected to the second electrode; and a protective layer which extends from the top of the first insulation layer arranged on the side section of the light-emitting structure to the top of the first insulation layer arranged on the top of the first electrode, and is arranged so as to cover a bent part of the first insulation layer.
Abstract:
Embodiments provide a light emitting device package including a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes connected to the first and second conductive semiconductor layers, a first pad connected to the first electrodes in first-first through-holes penetrating the second conductive semiconductor layer and the active layer, and a first insulation layer disposed between the first pad and the second conductive semiconductor layer and between the first pad and the active layer to cover the first electrodes in a first-second through-hole, and a second pad connected to the second electrode through a second through-hole penetrating the first insulation layer and electrically spaced apart from the first pad. The second pad does not overlap the first insulation layer in the first-second through-hole in a thickness direction of the light emitting structure.
Abstract:
A light emitting device and a light emitting device package are provided. The light emitting device may include a substrate, a light emitting structure provided under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first insulating layer configured to expose the second conductive semiconductor layer and provided on a lower edge of the light emitting structure, a first light permeable electrode layer provided under the second conductive semiconductor layer exposed by the first insulating layer, a second light permeable electrode layer provided under the first insulating layer and the first light permeable electrode layer, and a reflective layer provided under the second light permeable electrode layer.
Abstract:
Embodiments provide a light emitting device package including a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes connected to the first and second conductive semiconductor layers, a first pad connected to the first electrodes in first-first through-holes penetrating the second conductive semiconductor layer and the active layer, and a first insulation layer disposed between the first pad and the second conductive semiconductor layer and between the first pad and the active layer to cover the first electrodes in a first-second through-hole, and a second pad connected to the second electrode through a second through-hole penetrating the first insulation layer and electrically spaced apart from the first pad. The second pad does not overlap the first insulation layer in the first-second through-hole in a thickness direction of the light emitting structure.
Abstract:
Disclosed are a light emitting device. The light emitting device includes first and second light emitting cells on a conductive support member and having a hole. The first and second light emitting cells includes first and second semiconductor layers, and an active layer. First and second conducive layers are between the first light emitting cell and the conductive support member, and a third and fourth conductive layers are between the second light emitting cell and the conductive support member. First insulating layer is between the second and fourth conductive layers and the conductive support member. Second insulating layer is disposed in the hole. The second conductive layer is electrically connected to the first light emitting cells through the hole and the third conductive layer.
Abstract:
A light emitting device includes a substrate having a top surface and an bottom surface and a light emitting structure on the substrate, disposed closer to the substrate top surface than the substrate bottom surface, having an n-type conductive type semiconductor layer, a p-type conductive type semiconductor layer, and an active layer. The light emitting device also includes a transparent electrode layer, a first electrode, and a second electrode. The substrate has side surfaces extending from the substrate bottom surface to the substrate top surface, the side surfaces inclined outwardly as the substrate extends in a direction from the substrate bottom surface to the substrate top surface. The transparent electrode layer overlaps more than 50% of a total area of the substrate bottom surface, and a part of light generated by the light emitting structure is emitted to outside via the transparent electrode layer.
Abstract:
Disclosed in an embodiment are a semiconductor device and a light-emitting device package including same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged in a matrix shape in the central area of the substrate; passivation layers arranged on upper surfaces and lateral surfaces of the semiconductor structures and on the edge area of the substrate; a plurality of first wiring lines which are arranged at lower parts of the plurality of semiconductor structures and electrically connected thereto, and which include first end parts extending from the central area to the edge area of the substrate; a plurality of second wiring lines which are arranged at the lower parts of the plurality of semiconductor structures and electrically connected thereto, and which include second end parts extending from the central area to the edge area of the substrate; a plurality of first pads penetrating the passivation layer so as to be connected to the plurality of first end parts; and a plurality of second pads penetrating the passivation layers so as to be connected to the plurality of second end parts, wherein the plurality of semiconductor structures include a plurality of first semiconductor structures, which are arranged in a first area of the central area, and a plurality of second semiconductor structures, which are arranged in a second area of the central area, and the size of the plurality of first semiconductor structures differs from the size of the plurality of second semiconductor structures.
Abstract:
Disclosed in an embodiment is a semiconductor device package comprising a substrate and a plurality of semiconductor structures arranged to be spaced apart at the center of the substrate, wherein the semiconductor structure is arranged on the substrate and includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and the ratio of the maximum height of the outermost surface of the first conductive type semiconductor layer to the length of the spacing distance between the adjacent semiconductor structures is 1:3 to 1:60.
Abstract:
In an embodiment, disclosed is a semiconductor device comprising: a semiconductor structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode which is electrically connected to the first conductive semiconductor layer; and a second electrode which is electrically connected to the second conductive semiconductor layer, wherein an area ratio between an area of an upper surface of the second conductive semiconductor layer and an area of an outer surface of the active layer is 1:0.0005 to 1:0.01.