公开(公告)号：US20070235059A1

公开(公告)日：2007-10-11

申请号：US11400663

申请日：2006-04-07

申请人： Schubert Chu ,  Frederick Wu ,  Christophe Marcadal ,  Seshadri Ganguli ,  Dien-Yeh Wu ,  Kavita Shah ,  Paul Ma

发明人： Schubert Chu ,  Frederick Wu ,  Christophe Marcadal ,  Seshadri Ganguli ,  Dien-Yeh Wu ,  Kavita Shah ,  Paul Ma

IPC分类号： B08B6/00 ,  C25F1/00

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  C23C16/52 ,  Y02C20/30 ,  Y10S438/905

摘要： A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.

摘要翻译： 通过将清洁气体引入处理室，冲击与处理室连通的远程等离子体源中的等离子体来测量半导体处理室，测量等离子体的阻抗，将含有钌的沉积物汽化在 处理室以形成含钌气体混合物，并使气体混合物流过分析器并进入排气收集组件。 等离子体的阻抗与钌浓度结合的测量提供了室清洁度的精确指示。

公开(公告)号：US09032906B2

公开(公告)日：2015-05-19

申请号：US11873129

申请日：2007-10-16

申请人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick C. Wu ,  Schubert S. Chu

发明人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick C. Wu ,  Schubert S. Chu

IPC分类号： C23C16/50 ,  C23C16/455 ,  C23C16/18 ,  C23C16/509 ,  H01J37/32 ,  H01L21/285 ,  H01L21/768

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01L21/28562 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a plasma baffle assembly for receiving a process gas within a plasma-enhanced vapor deposition chamber is provided which includes a plasma baffle plate containing an upper surface to receive a process gas and a lower surface to emit the process gas, a plurality of openings configured to flow the process gas from above the upper surface to below the lower surface, wherein each opening is positioned at a predetermined angle of a vertical axis that is perpendicular to the lower surface, and a conical nose cone on the upper surface. In one example, the openings are slots positioned at a predetermined angle to emit the process gas with a circular flow pattern.

摘要翻译： 本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。 在一个实施例中，提供了用于接收等离子体增强气相沉积室内的处理气体的等离子体挡板组件，其包括含有上表面以接收处理气体的等离子体挡板和用于发射处理气体的下表面，多个 的开口，其被配置为使处理气体从上表面上方流动到下表面下方，其中每个开口定位在垂直于下表面的垂直轴线的预定角度以及在上表面上的锥形鼻锥。 在一个示例中，开口是以预定角度定位的槽，以以圆形流动图案发射处理气体。

公开(公告)号：US08951478B2

公开(公告)日：2015-02-10

申请号：US11960212

申请日：2007-12-19

申请人： Schubert S. Chu ,  Christophe Marcadal ,  Seshadri Ganguli ,  Norman M. Nakashima ,  Dien-Yeh Wu

发明人： Schubert S. Chu ,  Christophe Marcadal ,  Seshadri Ganguli ,  Norman M. Nakashima ,  Dien-Yeh Wu

IPC分类号： B01J10/00 ,  C23C16/448

CPC分类号： C23C16/4482 ,  C23C16/4481

摘要： Embodiments of the invention provide an apparatus and a process for generating a chemical precursor used in a vapor deposition processing system. The apparatus includes a canister (e.g., ampoule) having a sidewall, a top, and a bottom encompassing an interior volume therein, inlet and outlet ports in fluid communication with the interior volume, and a thermally conductive coating disposed on or over the outside surface of the canister. The thermally conductive coating is more thermally conductive than the outside surface of the canister. The thermally conductive coating may contain aluminum, aluminum nitride, copper, brass, silver, titanium, silicon nitride, or alloys thereof. In some embodiments, an adhesion layer (e.g., titanium or tantalum) may be disposed between the outside surface of the canister and the thermally conductive coating. In other embodiments, the canister may contain a plurality of baffles or solid heat-transfer particles to help evenly heat a solid precursor therein.

摘要翻译： 本发明的实施方案提供了用于产生在气相沉积处理系统中使用的化学前体的装置和方法。 该装置包括具有侧壁，顶部和底部的罐（例如，安瓿），其内部容纳有内部容积，与内部空间流体连通的入口和出口以及设置在外表面上或上方的导热涂层 的罐子。 导热涂层比罐的外表面更加导热。 导热涂层可以含有铝，氮化铝，铜，黄铜，银，钛，氮化硅或其合金。 在一些实施例中，粘合层（例如，钛或钽）可以设置在罐的外表面和导热涂层之间。 在其它实施例中，罐可以包含多个挡板或固体传热颗粒以帮助均匀地加热其中的固体前体。

公开(公告)号：US07850779B2

公开(公告)日：2010-12-14

申请号：US11556758

申请日：2006-11-06

申请人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick C. Wu ,  Schubert S. Chu

发明人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick C. Wu ,  Schubert S. Chu

IPC分类号： C23C16/452 ,  H01L21/306

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01L21/28562 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a lid assembly for conducting a vapor deposition process within a process chamber is provided which includes an insulation cap and a plasma screen. In one example, the insulation cap has a centralized channel configured to flow a first process gas from an upper surface to an expanded channel and an outer channel configured to flow a second process gas from an upper surface to a groove which is encircling the expanded channel. In one example, the plasma screen has an upper surface containing an inner area with a plurality of holes and an outer area with a plurality of slots. The insulation cap may be positioned on top of the plasma screen to form a centralized gas region with the expanded channel and a circular gas region with the groove.

摘要翻译： 本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。 在一个实施例中，提供了一种用于在处理室内进行气相沉积工艺的盖组件，其包括绝缘盖和等离子体屏。 在一个示例中，绝缘帽具有被配置为使第一处理气体从上表面流动到扩张通道的集中通道，以及构造成将第二处理气体从上表面流动到围绕扩展通道的凹槽的外通道 。 在一个示例中，等离子体屏幕具有包含具有多个孔的内部区域和具有多个狭槽的外部区域的上表面。 绝缘帽可以位于等离子体屏幕的顶部，以形成具有扩展通道的集中气体区域和具有凹槽的圆形气体区域。

公开(公告)号：US20070128862A1

公开(公告)日：2007-06-07

申请号：US11556756

申请日：2006-11-06

申请人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

发明人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

IPC分类号： H01L21/44 ,  H01L23/34

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01L21/28562 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a showerhead assembly comprises a showerhead and a plasma baffle that are used to disperse process gases within a plasma-enhanced vapor deposition chamber. The showerhead plate comprises an inner area configured to position the plasma baffle therein and an outer area which has a plurality of holes for emitting a process gas. The plasma baffle comprises a conical nose disposed on an upper surface to receive another process gas, a lower surface to emit the process gas and a plurality of openings configured to flow the process gas from above the upper surface into a process region. The openings are preferably slots that are positioned at predetermined angle for emitting the process gas with a circular flow pattern.

摘要翻译： 本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。 在一个实施例中，喷头组件包括用于在等离子体增强的气相沉积室内分散工艺气体的喷头和等离子体挡板。 喷头板包括配置成将等离子体挡板定位在其中的内部区域和具有用于发射处理气体的多个孔的外部区域。 等离子体挡板包括设置在上表面上以接收另一工艺气体的锥形鼻，用于发射处理气体的下表面和被配置为将工艺气体从上表面上流动到工艺区域中的多个开口。 开口优选地以预定角度定位以用于以圆形流动图案发射处理气体的槽。

公开(公告)号：US20070151861A1

公开(公告)日：2007-07-05

申请号：US11682005

申请日：2007-03-05

申请人： MING XI ,  Paul Smith ,  Ling Chen ,  Michael Yang ,  Mei Chang ,  Fusen Chen ,  Christophe Marcadal ,  Jenny Lin

发明人： MING XI ,  Paul Smith ,  Ling Chen ,  Michael Yang ,  Mei Chang ,  Fusen Chen ,  Christophe Marcadal ,  Jenny Lin

IPC分类号： C23C28/00 ,  C23C28/02

CPC分类号： H01L21/76804 ,  C25D5/02 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the present invention provide a process sequence and related hardware for filling a patterned feature on a substrate with a metal, such as copper. The sequence comprises first forming a reliable barrier layer in the patterned feature to prevent diffusion of the metal into the dielectric layer through which the patterned feature is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the barrier layer at the bottom of the patterned feature, depositing a second barrier layer, and then filling the patterned feature with a metal, such as copper.

摘要翻译： 本发明的实施例提供了用金属（例如铜）在衬底上填充图案化特征的工艺顺序和相关硬件。 序列包括首先在图案化特征中形成可靠的阻挡层，以防止金属扩散到通过其形成图案化特征的电介质层。 一个序列包括在图案化电介质上形成大致共形的阻挡层，在图案化特征的底部蚀刻阻挡层，沉积第二阻挡层，然后用诸如铜的金属填充图案化的特征。

公开(公告)号：US07265048B2

公开(公告)日：2007-09-04

申请号：US11069514

申请日：2005-03-01

申请人： Hua Chung ,  Seshadri Ganguli ,  Christophe Marcadal ,  Jick M. Yu

发明人： Hua Chung ,  Seshadri Ganguli ,  Christophe Marcadal ,  Jick M. Yu

IPC分类号： H01L21/4763

CPC分类号： H01L21/76846 ,  H01L21/28556 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089

摘要： A method and apparatus for forming layers on a substrate comprising depositing a metal seed layer on a substrate surface having apertures, depositing a transition metal layer over the copper seed layer, and depositing a bulk metal layer over the transition metal layer. Also a method and apparatus for forming a via through a dielectric to reveal metal at the base of the via, depositing a transition metal layer, and depositing a first metal layer on the transition metal layer. Additionally, a method and apparatus for depositing a transition metal layer on an exposed metal surface, and depositing a layer thereover selected from the group consisting of a capping layer and a low dielectric constant layer.

摘要翻译： 一种用于在衬底上形成层的方法和装置，包括在具有孔的衬底表面上沉积金属籽晶层，在铜籽晶层上沉积过渡金属层，以及在过渡金属层上沉积体金属层。 还有一种用于通过电介质形成通孔以在通孔底部露出金属的方法和装置，沉积过渡金属层，以及在过渡金属层上沉积第一金属层。 另外，一种用于在暴露的金属表面上沉积过渡金属层并在其上沉积选自由封盖层和低介电常数层组成的层的方法和装置。

公开(公告)号：US20050074968A1

公开(公告)日：2005-04-07

申请号：US10693775

申请日：2003-10-25

申请人： Ling Chen ,  Seshadri Ganguli ,  Wei Cao ,  Christophe Marcadal

发明人： Ling Chen ,  Seshadri Ganguli ,  Wei Cao ,  Christophe Marcadal

IPC分类号： H01L21/285 ,  H01L21/4763 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76844 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76865

摘要： A method of forming barrier layers in a via hole extending through an inter-level dielectric layer and including a preformed first barrier coated onto the bottom and sidewalls of the via holes. In a single plasma sputter reactor, a first step sputters the wafer rather than the target with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls and a second step sputter deposits a second barrier layer, for example of Ta/TaN, onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls.

摘要翻译： 在穿过层间电介质层的通孔中形成阻挡层的方法，包括涂覆在通孔的底部和侧壁上的预先形成的第一屏障。 在单个等离子体溅射反应器中，第一步骤以高能离子将晶片而不是目标物喷射，以从通孔的底部除去阻挡层，而不是从侧壁排出，第二步骤溅射沉积第二阻挡层，例如 的Ta / TaN，通过底部和侧壁。 这两个步骤可以通过施加到靶，通过室压力或通过晶片偏置的功率来区分。 第二步骤可以包括从通孔底部同时移除第一阻挡层并将第二阻挡层溅射到通孔侧壁上。

公开(公告)号：US06953742B2

公开(公告)日：2005-10-11

申请号：US10693775

申请日：2003-10-25

申请人： Ling Chen ,  Seshadri Ganguli ,  Wei Cao ,  Christophe Marcadal

发明人： Ling Chen ,  Seshadri Ganguli ,  Wei Cao ,  Christophe Marcadal

IPC分类号： H01L21/285 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76844 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76865

摘要： A method of forming barrier layers in a via hole extending through an inter-level dielectric layer and including a preformed first barrier coated onto the bottom and sidewalls of the via holes. In a single plasma sputter reactor, a first step sputters the wafer rather than the target with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls and a second step sputter deposits a second barrier layer, for example of Ta/TaN, onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls.

公开(公告)号：US07576002B2

公开(公告)日：2009-08-18

申请号：US11184431

申请日：2005-07-19

申请人： Ling Chen ,  Seshadri Ganguli ,  Wei Cao ,  Christophe Marcadal

发明人： Ling Chen ,  Seshadri Ganguli ,  Wei Cao ,  Christophe Marcadal

IPC分类号： H01L21/00 ,  H01L21/4763

CPC分类号： H01L21/76844 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76865

摘要： A method of forming barrier layers in a via hole extending through an inter-level dielectric layer and including a preformed first barrier coated onto the bottom and sidewalls of the via holes. In a single plasma sputter reactor, a first step sputters the wafer rather than the target with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls and a second step sputter deposits a second barrier layer, for example of Ta/TaN, onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls.

摘要翻译： 在穿过层间电介质层的通孔中形成阻挡层的方法，包括涂覆在通孔的底部和侧壁上的预先形成的第一屏障。 在单个等离子体溅射反应器中，第一步骤以高能离子将晶片而不是目标物喷射，以从通孔的底部除去阻挡层，而不是从侧壁排出，第二步骤溅射沉积第二阻挡层，例如 的Ta / TaN，通过底部和侧壁。 这两个步骤可以通过施加到靶，通过室压力或通过晶片偏置的功率来区分。 第二步骤可以包括从通孔底部同时移除第一阻挡层并将第二阻挡层溅射到通孔侧壁上。