公开(公告)号：US08993088B2

公开(公告)日：2015-03-31

申请号：US13928746

申请日：2013-06-27

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Donald L. Westmoreland

IPC: H01L29/02 ,  H01L29/06 ,  B81C1/00 ,  B82Y30/00

CPC classification number: H01L29/0657 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/02118 ,  H01L21/0223 ,  H01L29/06 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/895 ,  Y10S977/90 ,  Y10T428/24182 ,  Y10T428/24521 ,  Y10T428/2462 ,  Y10T428/249921

Abstract: Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Semiconductor structures may include self-assembled block copolymer materials in the form of lines of half-cylinders of a minority block matrix of a majority block of the block copolymer. The lines of half-cylinders may be within trenches in the semiconductor structures.

Abstract translation: 提供了利用自组装嵌段共聚物在线阵列中制备亚光刻，纳米尺度微结构的方法，以及由这些方法形成的膜和器件。 半导体结构可以包括嵌段共聚物的多数嵌段的少数嵌段基体的半圆柱体形式的自组装嵌段共聚物材料。 半圆柱体的线可以在半导体结构的沟槽内。

公开(公告)号：US20140290858A1

公开(公告)日：2014-10-02

申请号：US14300404

申请日：2014-06-10

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward

IPC: H01L21/02 ,  B05D3/00

CPC classification number: H01L21/02002 ,  B05D3/007 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  H01L21/3086 ,  H01L21/31144

Abstract: Methods for fabricating sub-lithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided.

Abstract translation: 提供了利用两亲性试剂和水溶性水凝胶形成聚合物的水性乳液制备亚光刻纳米尺寸微通道的方法，以及由这些方法形成的膜和器件。

公开(公告)号：US20140107296A1

公开(公告)日：2014-04-17

申请号：US14104304

申请日：2013-12-12

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Timothy A. Quick

IPC: C08F299/04 ,  C08F299/02

CPC classification number: H01L21/76828 ,  B81C1/00031 ,  B81C2201/013 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08F299/02 ,  C08F299/0492 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for fabricating sub-lithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract translation: 提供了使用自组装嵌段共聚物制备亚光刻，纳米尺度微结构的方法，以及由这些方法形成的膜和器件。

公开(公告)号：US09768021B2

公开(公告)日：2017-09-19

申请号：US15044713

申请日：2016-02-16

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Timothy A. Quick ,  J. Neil Greeley

IPC: H01L21/326 ,  H01L21/479 ,  H01L21/027 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  C09D153/00 ,  G03F7/00 ,  H01L21/28 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L21/0271 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  C08L53/005 ,  C09D153/00 ,  C09D153/005 ,  G03F7/0002 ,  H01L21/02323 ,  H01L21/28 ,  H01L29/06 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/89 ,  C08L2666/02

Abstract: Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.

公开(公告)号：US09257256B2

公开(公告)日：2016-02-09

申请号：US14075647

申请日：2013-11-08

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Donald L. Westmoreland ,  Gurtej S. Sandhu

IPC: H01J37/02 ,  B81C1/00 ,  B82Y30/00 ,  G03F7/00 ,  G03F7/26

CPC classification number: H01J37/02 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  G03F7/0002 ,  G03F7/265 ,  Y10T428/24 ,  Y10T428/24149 ,  Y10T428/24174 ,  Y10T428/2438

Abstract: Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract translation: 提供了使用自组装嵌段共聚物制造包括开口和线性微通道的亚光刻纳米尺度微结构阵列的方法，以及由这些方法形成的膜和器件。 在一些实施例中，膜可以用作模板或掩模来蚀刻下层材料层中的开口。

公开(公告)号：US09140977B2

公开(公告)日：2015-09-22

申请号：US13892711

申请日：2013-05-13

Applicant: Micron Technology, Inc.

Inventor： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott L. Light ,  Dan B. Millward

IPC: G03F1/36 ,  G03F1/38 ,  G03F1/54

CPC classification number: G03F1/38 ,  G03F1/50 ,  G03F1/54 ,  Y10T29/49002

Abstract: An imaging device comprising a first region and a second region. Imaging features in the first region and assist features in the second region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.

Abstract translation: 一种成像装置，包括第一区域和第二区域。 第一区域中的成像特征和第二区域中的辅助特征基本上彼此相同，并且基本上在间距上形成。 还公开了形成成像装置的方法和形成半导体器件结构的方法。

公开(公告)号：US20150076436A1

公开(公告)日：2015-03-19

申请号：US14546897

申请日：2014-11-18

Applicant: Micron Technology, Inc.

Inventor： Scott E. Sills ,  Dan B. Millward

IPC: H01L45/00

CPC classification number: H01L45/1266 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1633 ,  H01L45/1658 ,  H01L45/1683

Abstract: A method of forming a semiconductor device structure. The method comprises forming a block copolymer assembly comprising at least two different domains over an electrode. At least one metal precursor is selectively coupled to the block copolymer assembly to form a metal-complexed block copolymer assembly comprising at least one metal-complexed domain and at least one non-metal-complexed domain. The metal-complexed block copolymer assembly is annealed in to form at least one metal structure. Other methods of forming a semiconductor device structures are described. Semiconductor device structures are also described.

Abstract translation: 一种形成半导体器件结构的方法。 该方法包括在电极上形成包含至少两个不同结构域的嵌段共聚物组合物。 选择性地将至少一种金属前体偶联到嵌段共聚物组合物上以形成包含至少一个金属络合域和至少一个非金属络合域的金属络合嵌段共聚物组合物。 将金属络合的嵌段共聚物组合物退火以形成至少一种金属结构。 描述形成半导体器件结构的其它方法。 还描述了半导体器件结构。

公开(公告)号：US08945700B2

公开(公告)日：2015-02-03

申请号：US13928746

申请日：2013-06-27

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Donald L. Westmoreland

IPC: H01L29/02 ,  H01L29/06 ,  B81C1/00 ,  B82Y30/00

Abstract: Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Semiconductor structures may include self-assembled block copolymer materials in the form of lines of half-cylinders of a minority block matrix of a majority block of the block copolymer. The lines of half-cylinders may be within trenches in the semiconductor structures.

公开(公告)号：US20140246759A1

公开(公告)日：2014-09-04

申请号：US14276204

申请日：2014-05-13

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward

IPC: H01L21/033 ,  H01L29/02

CPC classification number: H01L21/0338 ,  G03F7/038 ,  G03F7/039 ,  G03F7/094 ,  G03F7/11 ,  G03F7/165 ,  H01L21/0271 ,  H01L21/0332 ,  H01L29/02

Abstract: Methods for adhering materials and methods for enhancing adhesion between materials are disclosed. In some embodiments, a polymer brush material is bonded to a base material, and a developable polymer resist material is applied over the grafted polymer brush material. The resist material is at least partially miscible in the grafted polymer brush material. As such, the resist material at least partially dissolves within the grafted polymer brush material to form an intertwined material of grafted polymer brush macromolecules and resist polymer macromolecules. Adhesion between the developable polymer resist and the base material may be thereby enhanced. Also disclosed are related semiconductor device structures.

Abstract translation: 公开了粘合材料的方法和用于增强材料之间的粘合力的方法。 在一些实施方案中，将聚合物刷材料结合到基材上，并将可显影聚合物抗蚀剂材料施加到接枝聚合物刷材料上。 抗蚀剂材料在接枝聚合物刷材料中至少部分可混溶。 因此，抗蚀剂材料至少部分地溶解在接枝的聚合物刷材料内以形成接枝聚合物刷大分子的交织的材料并且抵抗聚合物大分子。 因此，可显影聚合物抗蚀剂和基材之间的粘合力可以得到增强。 还公开了相关的半导体器件结构。

公开(公告)号：US08785559B2

公开(公告)日：2014-07-22

申请号：US13934676

申请日：2013-07-03

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward

IPC: C08L71/02

CPC classification number: G03F7/40 ,  B32B3/10 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08G81/02 ,  G03F7/12

Abstract: Methods for fabricating a random graft PS-r-PEO copolymer and its use as a neutral wetting layer in the fabrication of sublithographic, nanoscale arrays of elements including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract translation: 用于制造无规接枝PS-r-PEO共聚物的方法及其在制备亚光刻纳米级元素阵列的元件中作为中性润湿层的用途，包括使用自组装嵌段共聚物的开口和线性微通道，以及由这些方法形成的膜和器件 被提供。 在一些实施例中，膜可以用作模板或掩模来蚀刻下层材料层中的开口。