公开(公告)号：US20160307839A1

公开(公告)日：2016-10-20

申请号：US15192060

申请日：2016-06-24

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Anton J. deVilliers

IPC: H01L23/528 ,  H01L21/308 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/0226 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/441 ,  H01L21/467 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

Abstract translation: 形成半导体结构的方法包括在衬底结构中形成酸性或碱性材料的集合体。 在酸性或碱性材料和衬底结构的池之上形成抗蚀剂。 酸性或碱性材料从池中扩散到靠近池的抗蚀剂的部分，而不是远离池的抗蚀剂的部分。 然后，与远离池的抗蚀剂部分相比，抗蚀剂暴露于显影剂以除去更靠近池的抗蚀剂部分，以在抗蚀剂中形成开口。 开口具有靠近基板结构的较宽部分和远离基板结构的较窄部分。 该方法还可以包括在抗蚀剂的开口中形成特征。 这些特征具有靠近基底结构的较宽部分和远离基底结构的较窄部分。

公开(公告)号：US09396996B2

公开(公告)日：2016-07-19

申请号：US14848912

申请日：2015-09-09

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue (Gloria) Chen ,  Anton J. deVilliers

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/768 ,  H01L21/467 ,  H01L23/52 ,  H01L21/027 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L23/528 ,  H01L21/0226 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/441 ,  H01L21/467 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

Abstract translation: 形成半导体结构的方法包括在衬底结构中形成酸性或碱性材料的集合体。 在酸性或碱性材料和衬底结构的池之上形成抗蚀剂。 酸性或碱性材料从池中扩散到靠近池的抗蚀剂的部分，而不是远离池的抗蚀剂的部分。 然后，与远离池的抗蚀剂部分相比，抗蚀剂暴露于显影剂以除去更靠近池的抗蚀剂部分，以在抗蚀剂中形成开口。 开口具有靠近基板结构的较宽部分和远离基板结构的较窄部分。 该方法还可以包括在抗蚀剂的开口中形成特征。 这些特征具有靠近基底结构的较宽部分和远离基底结构的较窄部分。

公开(公告)号：US20150380307A1

公开(公告)日：2015-12-31

申请号：US14848912

申请日：2015-09-09

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue (Gloria) Chen ,  Anton J. deVilliers

IPC: H01L21/768 ,  H01L21/308 ,  H01L21/02

CPC classification number: H01L23/528 ,  H01L21/0226 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/441 ,  H01L21/467 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

Abstract translation: 形成半导体结构的方法包括在衬底结构中形成酸性或碱性材料的集合体。 在酸性或碱性材料和衬底结构的池之上形成抗蚀剂。 酸性或碱性材料从池中扩散到靠近池的抗蚀剂的部分，而不是远离池的抗蚀剂的部分。 然后，与远离池的抗蚀剂部分相比，抗蚀剂暴露于显影剂以除去更靠近池的抗蚀剂部分，以在抗蚀剂中形成开口。 开口具有靠近基板结构的较宽部分和远离基板结构的较窄部分。 该方法还可以包括在抗蚀剂的开口中形成特征。 这些特征具有靠近基底结构的较宽部分和远离基底结构的较窄部分。

公开(公告)号：US09184058B2

公开(公告)日：2015-11-10

申请号：US14139582

申请日：2013-12-23

Applicant: Micron Technology, Inc. ,  Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

Inventor： William R. Brown ,  Adam Olson ,  Kaveri Jain ,  Ho Seop Eom ,  Xue Gloria Chen ,  Nik Mirin ,  Dan Millward ,  Peter Trefonas, III ,  Phillip Dene Hustad ,  Jong Keun Park ,  Christopher Nam Lee

IPC: H01L21/311 ,  H01L21/302 ,  H01L21/461 ,  H01L21/308

CPC classification number: H01L21/0274 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76816

Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.

Abstract translation: 一些实施例包括形成图案的方法。 在材料上形成第一个掩模。 第一掩模具有在其中延伸的特征并且限定第一图案。 第一种模式在特征分布上具有第一级的均匀性。 在第一掩模之间并且在特征内形成刷层以使特征变窄以从第一掩模创建第二掩模。 所述第二掩模具有比所述第一级别的均匀性更窄的所述窄化特征的第二级别的均匀性。 图案从第二个掩模转移到材料中。

公开(公告)号：US08999852B2

公开(公告)日：2015-04-07

申请号：US13712806

申请日：2012-12-12

Applicant: Micron Technology, Inc.

Inventor： Vishal Sipani ,  Anton J. deVillers ,  William R. Brown ,  Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

IPC: H01L21/302 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/308 ,  H01L21/02642 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

Abstract translation: 在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。 侧壁衬里形成在圆柱状结构的内侧和上侧外侧上，并且在圆柱状结构的横向外侧形成间隙空间。 间隙空间被四个圆柱状结构的外侧壁上的纵向接触的侧壁衬里分开包围。 公开了其他实施例，包括与方法无关的结构。

公开(公告)号：US20140162457A1

公开(公告)日：2014-06-12

申请号：US13712806

申请日：2012-12-12

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Vishal Sipani ,  Anton J. deVillers ,  William R. Brown ,  Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

IPC: H01L21/311 ,  H01L21/31

CPC classification number: H01L21/308 ,  H01L21/02642 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

Abstract translation: 在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。 侧壁衬里形成在圆柱状结构的内侧和上侧外侧上，并且在圆柱状结构的横向外侧形成间隙空间。 间隙空间被四个圆柱状结构的外侧壁上的纵向接触的侧壁衬里分开包围。 公开了其他实施例，包括与方法无关的结构。

公开(公告)号：US20230116129A1

公开(公告)日：2023-04-13

申请号：US18062495

申请日：2022-12-06

Applicant: Micron Technology, Inc.

Inventor： Nicholas Hendricks ,  Adam L. Olson ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Kaveri Jain ,  Scott Schuldenfrei

IPC: H01L21/027 ,  C08G81/00 ,  H01L21/033 ,  H01L21/3105 ,  B81C1/00 ,  C08L53/00 ,  H01L21/02

Abstract: A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.

公开(公告)号：US11189526B2

公开(公告)日：2021-11-30

申请号：US16799223

申请日：2020-02-24

Applicant: Micron Technology, Inc.

Inventor： Lance Williamson ,  Adam L. Olson ,  Kaveri Jain ,  Robert Dembi ,  William R. Brown

IPC: H01L27/11575 ,  H01L21/768 ,  H01L23/522 ,  H01L27/11582 ,  H01L23/528 ,  H01L27/1157 ,  H01L27/11556

Abstract: Methods of forming staircase structures. The method comprises forming a patterned hardmask over tiers. An exposed portion of an uppermost tier is removed to form an uppermost stair. A first liner material is formed over the patterned hardmask and the uppermost tier, and a portion of the first liner material is removed to form a first liner and expose an underlying tier. An exposed portion of the underlying tier is removed to form an underlying stair in the underlying tier. A second liner material is formed over the patterned hardmask, the first liner, and the second liner. A portion of the second liner material is removed to form a second liner and expose another underlying tier. An exposed portion of the another underlying tier is removed to form another underlying stair. The patterned hardmask is removed. Staircase structures and semiconductor device structure are also disclosed.

公开(公告)号：US10522461B2

公开(公告)日：2019-12-31

申请号：US16042255

申请日：2018-07-23

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue (Gloria) Chen ,  Anton J. deVilliers

IPC: H01L21/31 ,  H01L23/528 ,  H01L21/467 ,  H01L23/52 ,  H01L21/768 ,  H01L21/027 ,  H01L21/02 ,  H01L21/308

Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

公开(公告)号：US10388601B2

公开(公告)日：2019-08-20

申请号：US15842432

申请日：2017-12-14

Applicant: Micron Technology, Inc.

Inventor： William R. Brown ,  Jenna L. Russon ,  Tim H. Bossart ,  Brian R. Watson ,  Nikolay A. Mirin ,  David A. Kewley

IPC: G06F17/50 ,  H01L27/02 ,  H01L27/11519 ,  G01R1/073 ,  G01R31/26 ,  H01L21/66 ,  H01L49/02 ,  H01L21/033 ,  H01L21/768 ,  H01L23/528 ,  H01L27/108 ,  H01L21/3213 ,  H01L27/11582

Abstract: A semiconductor device including conductive lines is disclosed. First conductive lines each comprise a first portion, a second portion, and an enlarged portion, the enlarged portion connecting the first portion and the second portion of the first conductive line. The semiconductor device includes second conductive lines, at least some of the second conductive lines disposed between a pair of the first conductive lines, each second conductive line including a larger cross-sectional area at an end portion of the second conductive line than at other portions thereof. The semiconductor device includes a pad on each of the first conductive lines and the second conductive lines, wherein the pad on each of the second conductive lines is on the end portion thereof and the pad on each of the first conductive lines is on the enlarged portion thereof.