公开(公告)号：US07992956B2

公开(公告)日：2011-08-09

申请号：US11758631

申请日：2007-06-05

申请人： Quanyuan Shang ,  John M. White

发明人： Quanyuan Shang ,  John M. White

IPC分类号： B41J29/393

CPC分类号： B41J29/393

摘要： The present invention provides inkjet print nozzle calibration systems and methods for calibrating an inkjet print nozzle. The systems may include an inkjet print nozzle adapted to dispense ink onto a substrate in response to a firing pulse voltage, a light source adapted to illuminate the dispensed ink, an imaging system adapted to measure a transmittance of light through the dispensed ink, and a controller adapted to controllably adjust the inkjet print nozzle based on the measured light transmittance. The methods may include dispensing ink onto a surface with an inkjet print nozzle set at a firing pulse voltage, measuring a light transmittance characteristic of the dispensed ink, determining a volume of ink dispensed based on the transmittance characteristic, and adjusting a fire pulse voltage of the inkjet print nozzle based on a difference between the determined volume of ink dispensed and an expected volume level of ink dispensed.

摘要翻译： 本发明提供喷墨打印喷嘴校准系统和用于校准喷墨打印喷嘴的方法。 系统可以包括喷墨打印喷嘴，其适于响应于点火脉冲电压将油墨分配到衬底上，适合于照亮所分配的油墨的光源，适于测量通过分配的油墨的光的透射率的成像系统，以及 控制器，其适于基于测量的透光率可控地调节喷墨打印喷嘴。 所述方法可以包括将墨水分配到具有设置在点火脉冲电压的喷墨打印喷嘴的表面上，测量所分配的墨水的透光率特性，基于透射特性确定分配的墨水体积，以及调节喷射脉冲电压 喷墨打印喷嘴基于确定的墨水分配量和分配的墨水的预期体积水平之间的差异。

公开(公告)号：US07902991B2

公开(公告)日：2011-03-08

申请号：US11682290

申请日：2007-03-05

申请人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

发明人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

IPC分类号： G08B21/00

CPC分类号： H01J37/32174 ,  H01J37/32935 ,  H03H7/40

摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.

摘要翻译： 通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。 在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。 在第二方面，第二对下限和上限不适合电源的频率。 两个方面优选一起用于检测异常状况的不同出现。

公开(公告)号：US20110041873A1

公开(公告)日：2011-02-24

申请号：US12925767

申请日：2010-10-28

申请人： Gaku Furuta ,  Tae Kyung Won ,  John M. White

发明人： Gaku Furuta ,  Tae Kyung Won ,  John M. White

IPC分类号： B08B7/00

CPC分类号： C23C16/0209 ,  C23C16/5096

摘要： We have a method of improving the deposition rate uniformity of the chemical vapor deposition (CVD) of films when a number of substrates are processed in series, sequentially in a deposition chamber. The method includes the plasma pre-heating of at least one processing volume structure within the processing volume which surrounds the substrate when the substrate is present in the deposition chamber. We also have a device-controlled method which adjusts the deposition time for a few substrates at the beginning of the processing of a number of substrates in series, sequentially in a deposition chamber, so that the deposited film thickness remains essentially constant during processing of the series of substrates. A combination of these methods into a single method provides the best overall results in terms of controlling average film thickness from substrate to substrate.

摘要翻译： 当在沉积室中顺序地处理多个基板时，我们具有提高膜的化学气相沉积（CVD）的沉积速率均匀性的方法。 该方法包括当衬底存在于沉积室中时，围绕衬底的处理体积内的至少一个处理体积结构的等离子体预热。 我们还有一种装置控制的方法，其可以在沉积室中顺次地串联处理多个基板的开始时调整几个基板的沉积时间，使得沉积膜厚度在处理期间保持基本恒定 系列底物。 将这些方法组合成单一方法提供了从基材到底物控制平均膜厚度方面的最佳总体结果。

公开(公告)号：US07879210B2

公开(公告)日：2011-02-01

申请号：US11347667

申请日：2006-02-03

申请人： Makoto Inagawa ,  Akihiro Hosokawa ,  John M. White

发明人： Makoto Inagawa ,  Akihiro Hosokawa ,  John M. White

IPC分类号： C23C14/35

CPC分类号： H01J37/3408 ,  H01J37/3435 ,  H01J37/3455

摘要： A magnetron scanning and support mechanism in which the magnetron is partially supported from an overhead scanning mechanism through multiple springs coupled to different horizontal locations on the magnetron and partially supported from below at multiple locations on the target, on which it slides or rolls. In one embodiment, the yoke plate is continuous and uniform. In another embodiment, the magnetron's magnetic yoke is divided into two flexible yokes, for example, of complementary serpentine shape and each supporting magnets of respective polarity. The yokes separated by a gap sufficiently small that the two yokes are magnetically coupled. Each yoke has its own set of spring supports from above and rolling/sliding supports from below to allow the magnetron shape to conform to that of the target. Alternatively, narrow slots are formed in a unitary yoke.

摘要翻译： 一种磁控管扫描和支撑机构，其中磁控管通过耦合到磁控管上的不同水平位置的多个弹簧部分地从顶部扫描机构支撑，并且在靶上的多个位置处从其下方部分地支撑，在其上滑动或滚动。 在一个实施例中，轭板是连续且均匀的。 在另一个实施例中，磁控管的磁轭被分成两个柔性轭，例如互补的蛇形形状和各个极性的每个支撑磁体。 磁轭分开足够小的间隙，使得两个磁轭磁耦合。 每个轭具有其自己的一组弹簧支撑件，从上方起滚动/滑动支撑件，从而允许磁控管形状与靶材的形状一致。 或者，窄槽形成为单一轭。

公开(公告)号：US07784164B2

公开(公告)日：2010-08-31

申请号：US11214475

申请日：2005-08-29

申请人： John M. White ,  Donald Verplancken ,  Shinichi Kurita

发明人： John M. White ,  Donald Verplancken ,  Shinichi Kurita

IPC分类号： B23P11/00

CPC分类号： H01L21/67236 ,  H01L21/67196 ,  Y10S414/135 ,  Y10S414/139 ,  Y10T29/49826 ,  Y10T29/53

摘要： A non-polygon shaped, multi-piece chamber is provided. A non-polygon shaped, multi-piece chamber may include (1) a central piece having a first side and a second side, (2) a first side piece adapted to couple with the first side of the central piece, and (3) a second side piece adapted to couple with the second side of the central piece. The central piece, the first side piece, and the second side piece form a cylindrical overall shape when coupled together. Numerous other aspects are provided.

摘要翻译： 提供非多边形形状的多片式室。 非多边形多片式室可以包括（1）具有第一侧和第二侧的中心件，（2）适于与中心件的第一侧连接的第一侧件，以及（3） 适于与中心件的第二侧联接的第二侧件。 当连接在一起时，中心件，第一侧件和第二侧件形成圆柱形的整体形状。 提供了许多其他方面。

公开(公告)号：US07732010B2

公开(公告)日：2010-06-08

申请号：US11406136

申请日：2006-04-18

申请人： Soo Young Choi ,  Beom Soo Park ,  Quanyuan Shang ,  Robert I. Greene ,  John M. White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

发明人： Soo Young Choi ,  Beom Soo Park ,  Quanyuan Shang ,  Robert I. Greene ,  John M. White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

IPC分类号： C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/4581 ,  C25D11/04 ,  C25D11/16 ,  C25D11/18

摘要： A method for supporting a glass substrate comprising providing a substrate support having an aluminum body, a substrate contact area formed on the surface of the substrate support, wherein the process of forming the substrate contact area comprises forming an anodization layer on a surface region of the aluminum body, the coating having a thickness of between about 0.3 mils and about 2.16 mils, wherein the surface region substantially corresponds to the substrate contact area, and preparing the anodization layer disposed over the surface region to a surface roughness between about 88 micro-inches and about 230 micro-inches, followed by anodizing the substrate surface to said thickness, positioning the substrate support adjacent a substrate processing region in a substrate processing chamber, wherein the substrate contact area is adjacent the substrate processing region, positioning the glass substrate on the substrate contact area.

摘要翻译： 一种用于支撑玻璃基板的方法，包括提供具有铝体的基板支撑件，形成在所述基板支撑件的表面上的基板接触区域，其中形成所述基板接触区域的工艺包括在所述基板支撑件的表面区域上形成阳极氧化层 铝体，所述涂层具有在约0.3密耳和约2.16密耳之间的厚度，其中所述表面区域基本上对应于所述基底接触面积，以及将所述阳极氧化层设置在所述表面区域上方的表面粗糙度在约88微英寸 约230微英寸，然后将基板表面阳极化至所述厚度，将基板支撑件邻近基板处理区域定位在基板处理室中，其中基板接触区域与基板处理区域相邻，将玻璃基板定位在基板处理区域上 基板接触面积。

公开(公告)号：US07655542B2

公开(公告)日：2010-02-02

申请号：US11426127

申请日：2006-06-23

申请人： Soo Young Choi ,  Takako Takehara ,  John M. White ,  Yong Kee Chae

发明人： Soo Young Choi ,  Takako Takehara ,  John M. White ,  Yong Kee Chae

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02579 ,  C23C16/24 ,  C30B25/105 ,  C30B29/06 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32495 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： Methods for depositing a microcrystalline silicon film layer with improved deposition rate and film quality are provided in the present invention. Also, photovoltaic (PV) cell having a microcrystalline silicon film is provided. In one embodiment, the method produces a microcrystalline silicon film on a substrate at a deposition rate greater than about 20 nm per minute, wherein the microcrystalline silicon film has a crystallized volume between about 20 percent to about 80 percent.

摘要翻译： 在本发明中提供了具有改进的沉积速率和膜质量的沉积微晶硅膜层的方法。 此外，提供具有微晶硅膜的光伏（PV）电池。 在一个实施例中，该方法以大于约20nm /分钟的沉积速率在衬底上产生微晶硅膜，其中微晶硅膜的结晶体积在约20％至约80％之间。

公开(公告)号：US07628899B2

公开(公告)日：2009-12-08

申请号：US11301849

申请日：2005-12-12

申请人： John M. White ,  Hien-Minh H. Le ,  Akihiro Hosokawa

发明人： John M. White ,  Hien-Minh H. Le ,  Akihiro Hosokawa

IPC分类号： C25B9/00

CPC分类号： H01J37/3408 ,  H01J37/3455

摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in a PVD chamber that has a magnetron assembly whose shape can be distorted to adjust the magnetic field strength in the processing region of the deposition chamber to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more magnetron regions and magnetron actuators that are used to increase and more evenly distribute the magnetic field strength throughout the processing region of the processing chamber during processing.

摘要翻译： 本发明总体上提供了一种用于处理PVD室中的基板的表面的装置和方法，该PVD腔具有可以变形形状的磁控管组件，以调节沉积室的处理区域中的磁场强度，以提高沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个磁控管区域和磁控管致动器，其用于在处理期间增加并且更均匀地分布整个处理室的处理区域的磁场强度。

公开(公告)号：US07625063B2

公开(公告)日：2009-12-01

申请号：US11019967

申请日：2004-12-22

申请人： John M. White ,  Fan Cheung Sze ,  Quanyuan Shang ,  Shinichi Kurita ,  Hongbin Ji ,  Janusz Jozwiak ,  Inchen Huang ,  Emanual Beer

发明人： John M. White ,  Fan Cheung Sze ,  Quanyuan Shang ,  Shinichi Kurita ,  Hongbin Ji ,  Janusz Jozwiak ,  Inchen Huang ,  Emanual Beer

IPC分类号： B41J23/00

CPC分类号： B41J3/407 ,  B41J2/04505 ,  B41J2/04541 ,  B41J2/04581 ,  B41J2/04588 ,  B41J2/0459 ,  B41J2/04593 ,  B41J2/125 ,  B41J3/28 ,  B41J3/543 ,  B41J25/001 ,  B41J25/003 ,  B41J25/005 ,  B41J29/15 ,  B41J29/393

摘要： In a first aspect, a first apparatus is provided for inkjet printing. The first apparatus includes an inkjet head support that includes a plurality of inkjet heads. A first inkjet head of the plurality of inkjet heads is adapted to be independently moveable in both directions along a lateral axis relative to a second inkjet head of the plurality of inkjet heads. The first apparatus also includes a system controller adapted to control an independent lateral movement of the first inkjet head relative to the second inkjet head. Numerous other aspects are provided.

摘要翻译： 在第一方面，提供了用于喷墨打印的第一装置。 第一装置包括包括多个喷墨头的喷墨头支撑件。 多个喷墨头中的第一喷墨头适于独立地沿相对于多个喷墨头的第二喷墨头的横向轴向两个方向移动。 第一装置还包括适于控制第一喷墨头相对于第二喷墨头的独立横向移动的系统控制器。 提供了许多其他方面。

公开(公告)号：US20090258162A1

公开(公告)日：2009-10-15

申请号：US12422183

申请日：2009-04-10

申请人： GAKU FURUTA ,  Young-Jin Choi ,  Soo Young Choi ,  Beom Soo Park ,  John M. White ,  Suhail Anwar ,  Robin L. Tiner

发明人： GAKU FURUTA ,  Young-Jin Choi ,  Soo Young Choi ,  Beom Soo Park ,  John M. White ,  Suhail Anwar ,  Robin L. Tiner

IPC分类号： C23C16/44 ,  C23C16/00 ,  H05H1/24

CPC分类号： H01J37/32357 ,  C23C16/4405 ,  C23C16/507 ,  H01J37/3244 ,  H01J2237/3321

摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.

摘要翻译： 本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。 通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。 气体可以在多个位置被供给到腔室。 在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。