Abstract:
A novel method of forming an alignment layer of a liquid crystal display device includes the steps of providing a substrate (e.g., a processed silicon wafer, etc.) having an alignment layer material deposited thereon and applying a series of pulses from a pulse laser to anneal portions of the alignment layer material and alter its surface morphology. The method can include the step of depositing the alignment layer material (e.g., a spin-on dielectric including SiO2) over the substrate using a spin-on process prior to laser annealing. Applying the series of laser pulses creates a repetitive pattern of features that facilitate alignment of liquid crystals according to a laser scan trace. Liquid crystal display devices with laser-annealed alignment layer(s) are also disclosed. The alignment layers of the invention are quickly and inexpensively applied and are very robust under prolonged, high-intensity light stress.
Abstract:
A novel method of forming an alignment layer of a liquid crystal display device includes the steps of providing a substrate (e.g., a processed silicon wafer, etc.) having an alignment layer material deposited thereon and applying a series of pulses from a pulse laser to anneal portions of the alignment layer material and alter its surface morphology. The method can include the step of depositing the alignment layer material (e.g., a spin-on dielectric including SiO2) over the substrate using a spin-on process prior to laser annealing. Applying the series of laser pulses creates a repetitive pattern of features that facilitate alignment of liquid crystals according to a laser scan trace. Liquid crystal display devices with laser-annealed alignment layer(s) are also disclosed. The alignment layers of the invention are quickly and inexpensively applied and are very robust under prolonged, high-intensity light stress.
Abstract:
An image sensor includes a plurality of photodiodes disposed in a semiconductor layer, a first isolation layer, and a dielectric filler. The dielectric filler is disposed in a trench in the first isolation layer, and the first isolation layer is disposed between the semiconductor layer and the dielectric filler. At least one additional isolation layer is disposed proximate to the first isolation layer, and a plurality of light channels in the at least one additional isolation layer extend through the at least one additional isolation layer to the dielectric filler. The plurality of light channels is disposed to direct light into the plurality of photodiodes.
Abstract:
An image sensor includes a pixel array with a plurality of pixels arranged in a semiconductor layer. A color filter array including a plurality of groupings of filters is disposed over the pixel array. Each filter is optically coupled to a corresponding one of the plurality of pixels. Each one of the plurality of groupings of filters includes a first, a second, a third, and a fourth filter having a first, a second, the second, and a third color, respectively. A metal layer is disposed over the pixel array and is patterned to include a metal mesh having mesh openings with a size and pitch to block incident light having a fourth color from reaching the corresponding pixel. The metal layer is patterned to include openings without the metal mesh to allow the incident light to reach the other pixels.
Abstract:
An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.
Abstract:
A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an M×N set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the same percentage of wavelengths that remain unfiltered by filters of a different photoresponse than the incident wavelength. Other embodiments are disclosed and claimed.
Abstract:
A method of forming microlenses for an image sensor having at least one large-area pixel and at least one small-area pixel is disclosed. The method includes forming a uniform layer of microlens material on a light incident side of the image sensor over the large-area pixel and over the small-area pixel. The method also includes forming the layer of microlens material into a first block disposed over the large-area pixel and into a second block disposed over the small-area pixel. A void is also formed in the second block to reduce a volume of microlens material included in the second block. The first and second blocks are then reflowed to form a respective first microlens and second microlens. The first microlens has substantially the same effective focal length as the second microlens.
Abstract:
An image sensor includes a plurality of photosensitive devices arranged in a semiconductor substrate. A planar layer is disposed over the plurality of photosensitive devices in the semiconductor substrate. A plurality of first microlenses comprised of a lens material is arranged in first lens regions on the planar layer. A plurality of lens barriers comprised of the lens material is arranged on the planar layer to provide boundaries that define second lens regions on the planar layer. A plurality of second microlenses comprised of the lens material is formed within the boundaries provided by the plurality of lens barriers that define the second lens regions on the planar layer. The plurality of lens barriers are integrated with respective second microlenses after a reflow process of the plurality of second microlenses.
Abstract:
An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer.
Abstract:
A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an M×N set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the crosstalk spectrum that is not filtered from light incident on the color filter array by the plurality of imaging filters. Other embodiments are disclosed and claimed.