公开(公告)号：US20080131257A1

公开(公告)日：2008-06-05

申请号：US11756124

申请日：2007-05-31

申请人： Carsten Peters ,  Thomas Werner ,  Frank Feustel ,  Kai Frohberg

发明人： Carsten Peters ,  Thomas Werner ,  Frank Feustel ,  Kai Frohberg

IPC分类号： B65H1/00 ,  B05D5/10 ,  G06F19/00 ,  B65B33/00

CPC分类号： H01L21/67346

摘要： By providing a safety material, such as an adhesive foil, the probability for transport-related damage or destruction of substrates caused by broken substrates may be significantly reduced.

摘要翻译： 通过提供诸如粘合箔的安全材料，可能会显着降低由于破碎的基材导致的与基板相关的损坏或破坏基板的可能性。

公开(公告)号：US20080099761A1

公开(公告)日：2008-05-01

申请号：US11747320

申请日：2007-05-11

申请人： Frank Feustel ,  Thomas Werner ,  Kai Frohberg

发明人： Frank Feustel ,  Thomas Werner ,  Kai Frohberg

IPC分类号： H01L21/66 ,  H01L23/58

CPC分类号： H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： OPC results may be efficiently evaluated on the basis of a test structure containing a plurality of line features with opposing end portions. Thus, for different line parameters, the effect of OPC may be determined for a given critical tip-to-tip distance by determining the leakage behavior of the test assemblies, each having different design parameter values for line width and lateral distance between adjacent lines.

摘要翻译： 可以基于包含具有相对端部的多个线特征的测试结构来有效地评估OPC结果。 因此，对于不同的线路参数，可以通过确定测试组件的泄漏行为来确定给定的临界尖端到尖端距离的OPC的效果，每个测试组件对于线宽和相邻线之间的横向距离具有不同的设计参数值。

公开(公告)号：US20080026487A1

公开(公告)日：2008-01-31

申请号：US11688280

申请日：2007-03-20

申请人： Frank Feustel ,  Thomas Werner ,  Kai Frohberg

发明人： Frank Feustel ,  Thomas Werner ,  Kai Frohberg

IPC分类号： H01L21/02

CPC分类号： H01L21/31144 ,  H01L21/26506 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76825 ,  H01L22/26 ,  H01L29/66636 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

摘要： By incorporating an etch control material after the formation of a material layer to be patterned, an appropriate material having a highly distinctive radiation wavelength may be used for generating a distinctive endpoint detection signal during an etch process. Advantageously, the material may be incorporated by ion implantation which provides reduced non-uniformity compared to etch non-uniformities, while the implantation process provides the potential for introducing even very “exotic” implantation species. In some embodiments, the substrate-to-substrate uniformity of the patterning of dual damascene structures may be increased.

摘要翻译： 通过在形成待图案化的材料层之后并入蚀刻控制材料，可以使用具有高度显着的辐射波长的适当材料来在蚀刻工艺期间产生独特的端点检测信号。 有利地，该材料可以通过离子注入并入，与蚀刻非均匀性相比，其提供了降低的不均匀性，而植入工艺提供了引入甚至非常“异乎寻常”的植入物种的潜力。 在一些实施例中，可以增加双镶嵌结构的图案化的基板到基板的均匀性。

公开(公告)号：US20080003826A1

公开(公告)日：2008-01-03

申请号：US11674869

申请日：2007-02-14

申请人： Thomas Werner ,  Robert Seidel ,  Frank Feustel

发明人： Thomas Werner ,  Robert Seidel ,  Frank Feustel

IPC分类号： H01L21/302

CPC分类号： H01L21/31144 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/76808 ,  H01L21/76816 ,  H01L21/76819

摘要： By additionally planarizing the surface topography of a planarization layer, which may be accomplished on the basis of mechanical contact, a uniform force, a polishing process and the like, an enhanced surface topography may be provided which may be advantageously used in subsequent patterning processes, such as photolithography, imprint techniques and the like.

摘要翻译： 通过额外地平坦化平面化层的表面形貌，其可以基于机械接触，均匀的力，抛光工艺等来实现，可以提供可以有利地用于随后的图案化工艺中的增强的表面形貌， 例如光刻，印记技术等。

公开(公告)号：US20080003818A1

公开(公告)日：2008-01-03

申请号：US11671688

申请日：2007-02-06

申请人： Robert Seidel ,  Carsten Peters ,  Frank Feustel

发明人： Robert Seidel ,  Carsten Peters ,  Frank Feustel

IPC分类号： H01L21/44

CPC分类号： B81B7/0006 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/28114 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/76804 ,  H01L21/76807 ,  H01L21/76817 ,  H01L21/76838 ,  H01L21/76852 ,  H01L21/76885 ,  H01L2221/1021

摘要： By forming metallization structures on the basis of an imprint technique, in which via openings and trenches may be commonly formed, a significant reduction of process complexity may be achieved due to the omission of at least one further alignment process as required in conventional process techniques. Furthermore, the flexibility and efficiency of imprint lithography may be increased by providing appropriately designed imprint molds in order to provide via openings and trenches exhibiting an increased fill capability, thereby also improving the performance of the finally obtained metallization structures with respect to reliability, resistance against electromigration and the like.

摘要翻译： 通过基于压印技术形成金属化结构，其中可以通常形成通孔和沟槽，由于根据常规工艺技术所要求的至少一个进一步对准过程，可以实现工艺复杂性的显着降低。 此外，可以通过提供适当设计的压印模具来提高压印光刻的灵活性和效率，以便提供表现出增加的填充能力的通孔开口和沟槽，从而也提高了最终获得的金属化结构在可靠性，抗性 电迁移等。

公开(公告)号：US20070296439A1

公开(公告)日：2007-12-27

申请号：US11623372

申请日：2007-01-16

申请人： Frank Feustel ,  Thomas Werner ,  Carsten Peters

发明人： Frank Feustel ,  Thomas Werner ,  Carsten Peters

IPC分类号： G01R31/02

CPC分类号： H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： By providing a plurality of resistors and a plurality of test patterns within a leakage current test structure, the number of probe pads required for estimating the plurality of test patterns may be significantly reduced, wherein, in some illustrative embodiments, several test patterns may be simultaneously assessed on the basis of two probe pads. Consequently, process parameters and/or design parameters for manufacturing metallization structures of semiconductor devices may be efficiently monitored and controlled.

摘要翻译： 通过在泄漏电流测试结构内提供多个电阻器和多个测试图案，可以显着地减少用于估计多个测试图案所需的探针焊盘的数量，其中在一些说明性实施例中，可以同时进行几个测试图案 基于两个探针垫进行评估。 因此，可以有效地监测和控制用于制造半导体器件的金属化结构的工艺参数和/或设计参数。

公开(公告)号：US08440534B2

公开(公告)日：2013-05-14

申请号：US13104474

申请日：2011-05-10

申请人： Uwe Griebenow ,  Jan Hoentschel ,  Kai Frohberg ,  Heike Berthold ,  Katrin Reiche ,  Frank Feustel ,  Kerstin Ruttloff

发明人： Uwe Griebenow ,  Jan Hoentschel ,  Kai Frohberg ,  Heike Berthold ,  Katrin Reiche ,  Frank Feustel ,  Kerstin Ruttloff

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L29/6656 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/6653 ,  H01L29/7836

摘要： Different threshold voltages of transistors of the same conductivity type in a complex integrated circuit may be adjusted on the basis of different Miller capacitances, which may be accomplished by appropriately adapting a spacer width and/or performing a tilted extension implantation. Thus, efficient process strategies may be available to controllably adjust the Miller capacitance, thereby providing enhanced transistor performance of low threshold transistors while not unduly contributing to process complexity compared to conventional approaches in which threshold voltage values may be adjusted on the basis of complex halo and well doping regimes.

公开(公告)号：US08377820B2

公开(公告)日：2013-02-19

申请号：US12693030

申请日：2010-01-25

申请人： Thomas Werner ,  Kai Frohberg ,  Frank Feustel

发明人： Thomas Werner ,  Kai Frohberg ,  Frank Feustel

IPC分类号： H01L21/4763

CPC分类号： H01L21/76811 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76804 ,  H01L21/76816 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a “via first/trench last” approach for forming metal lines and vias in a metallization system of a semiconductor device, a combination of two hard masks may be used, wherein the desired lateral size of the via openings may be defined on the basis of spacer elements, thereby resulting in significantly less demanding lithography conditions compared to conventional approaches.

摘要翻译： 在用于在半导体器件的金属化系统中形成金属线和通孔的通孔第一/沟槽最后方法中，可以使用两个硬掩模的组合，其中通孔开口的所需横向尺寸可以基于间隔物 因此与常规方法相比，导致光刻条件要求明显较低。

公开(公告)号：US08241973B2

公开(公告)日：2012-08-14

申请号：US12205221

申请日：2008-09-05

申请人： Uwe Griebenow ,  Kai Frohberg ,  Frank Feustel ,  Thomas Werner

发明人： Uwe Griebenow ,  Kai Frohberg ,  Frank Feustel ,  Thomas Werner

IPC分类号： H01L21/336 ,  H01L21/00

CPC分类号： H01L29/66636 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/7833 ,  H01L29/7848

摘要： The thickness of drain and source areas may be reduced by a cavity etch used for refilling the cavities with an appropriate semiconductor material, wherein, prior to the epitaxial growth, an implantation process may be performed so as to allow the formation of deep drain and source areas without contributing to unwanted channel doping for a given critical gate height. In other cases, the effective ion blocking length of the gate electrode structure may be enhanced by performing a tilted implantation step for incorporating deep drain and source regions.

摘要翻译： 漏极和源极区域的厚度可以通过用适合的半导体材料重新填充空腔的腔蚀刻来减小，其中，在外延生长之前，可以进行注入工艺以便形成深的漏极和源极 对于给定的关键栅极高度，没有有助于不期望的沟道掺杂的区域。 在其他情况下，可以通过执行用于引入深漏极和源极区域的倾斜注入步骤来增强栅电极结构的有效离子阻挡长度。

公开(公告)号：US08105962B2

公开(公告)日：2012-01-31

申请号：US12131429

申请日：2008-06-02

申请人： Kai Frohberg ,  Frank Feustel ,  Thomas Werner ,  Uwe Griebenow

发明人： Kai Frohberg ,  Frank Feustel ,  Thomas Werner ,  Uwe Griebenow

IPC分类号： H01L21/31

CPC分类号： H01L21/823425 ,  H01L21/823412 ,  H01L21/823807 ,  H01L29/665 ,  H01L29/7843

摘要： By providing a protection layer for suppressing stress relaxation in a tensile-stressed dielectric material during a dual stress liner approach, performance of N-channel transistors may be increased, while nevertheless maintaining a high degree of compatibility with conventional dual stress liner approaches.

摘要翻译： 通过在双重应力衬垫方法中提供用于抑制拉应力介电材料中的应力松弛的保护层，可以增加N沟道晶体管的性能，同时保持与常规双应力衬垫方法的高度兼容性。