Abstract:
A semiconductor device includes a first die pad with a first obverse surface facing in z direction, a second die pad spaced from the first die pad and including a second obverse surface facing in z direction, a first semiconductor element on the first obverse surface, a second semiconductor element on the second obverse surface, an insulating element on the first or second obverse surface and located between the first and second semiconductor elements in x direction to relay signals between the first and second semiconductor elements while electrically insulating these semiconductor elements, and a wire bonded to the first semiconductor element and the first obverse surface. The first die pad includes a first bond portion bonded to the wire, and a first opening located between the first bond portion and the first semiconductor element in y direction and including an opening end in the first obverse surface.
Abstract:
A semiconductor device includes a semiconductor control element, a first drive element, a second drive element and a first insulating element. The first drive element is spaced apart from the semiconductor control element in a first direction orthogonal to a thickness direction of the semiconductor control element and receives a signal transmitted from the semiconductor control element. The second drive element is spaced apart from the first drive element in a second direction orthogonal to the thickness direction and the first direction and receives a signal transmitted from the semiconductor control element. The first insulating element is located between the semiconductor control element and the first drive element in the first direction. The first insulating element relays a signal transmitted from the semiconductor control element to the first drive element and provides electrical insulation between the semiconductor control element and the first drive element.
Abstract:
A semiconductor device includes: a plurality of conductive members including a first die pad and a second die pad that are spaced apart from each other; a first semiconductor element mounted on the first die pad; a second semiconductor element mounted on the second die pad; and an insulator that is electrically connected to the first semiconductor element and the second semiconductor element, and that insulates the first semiconductor element and the second semiconductor element from each other. The plurality of conductive members include a third die pad spaced apart from the first die pad and the second die pad. The insulator is mounted on the third die pad.
Abstract:
There is provided a semiconductor device including: a conductive support including a first die pad and a second die pad having a potential different from a potential of the first die pad; a first semiconductor element mounted on the first die pad; a second semiconductor element mounted on the second die pad; and a sealing resin that covers the first semiconductor element, the second semiconductor element, and at least a portion of the conductive support.
Abstract:
A semiconductor device includes a first die pad, a second die pad, a first semiconductor element, a second semiconductor element, an insulating element, first terminals, second terminals, and a sealing resin. The sealing resin has a top surface, a bottom surface, and first to third side surfaces. The first terminals include a first edge terminal located closest to the third side surface. The second terminals include a second edge terminal located closest to the third side surface. A first creepage distance, which is a shortest distance from the first edge terminal to the second edge terminal along the first side surface, the third side surface, and the second side surface, is shorter than a second creepage distance, which is a shortest distance from the first edge terminal to the second edge terminal along the first side surface, the bottom surface, and the second side surface.
Abstract:
An electronic device includes an electronic element, a plurality of first sub-electrodes arrayed in a first direction, a plurality of second sub-electrodes arrayed in a second direction that is orthogonal to the first direction, a dummy electrode, and a sealing resin. The sealing resin has a resin back surface from which the plurality of first sub-electrodes, the plurality of second sub-electrodes and the dummy electrode are exposed. The plurality of second sub-electrodes are located further in the first direction than any of the plurality of first sub-electrodes. The plurality of first sub-electrodes are located further in the second direction than any of the plurality of second sub-electrodes. The dummy electrode is located further in the first direction than any of the plurality of first sub-electrodes, and is located further in the second direction than any of the plurality of second sub-electrodes.
Abstract:
The semiconductor device can prevent damages on a semiconductor chip even when a soldering material is used for bonding the back surface of the semiconductor chip to the junction plane of a chip junction portion such as an island or a die pad. This semiconductor device includes a semiconductor chip and a chip junction portion having a junction plane that is bonded to the back surface of the semiconductor chip with a soldering material. The junction plane is smaller in size than the back surface of the semiconductor chip. This semiconductor device may further include a plurality of extending portions which extend respectively from the periphery of the junction plane to directions parallel with the junction plane.
Abstract:
A semiconductor device includes a first wire, a first semiconductor element including an electrode electrically connected to the first wire, and a bump electrically bonded to the electrode. The first wire includes a first bonding portion located at one end and a second bonding portion located at another end. The bump includes a disc portion in contact with the electrode, and a pillar portion protruding from the disc portion in a first direction. The second bonding portion is electrically bonded to the pillar portion. A dimension of the pillar portion in the first direction increases as approaching the first bonding portion.
Abstract:
A semiconductor device includes a semiconductor element, a sealing resin covering the semiconductor element, a terminal electrically connected to the semiconductor element and protruding from the sealing resin in a first direction orthogonal to a thickness direction, and a plating layer located on the terminal. The terminal includes an end surface at a distal end protruding from the sealing resin, a first surface facing a first side in the thickness direction, and a recess recessed from both the end surface and the first surface. The plating layer includes a recess plating section located on at least a portion of the recess.
Abstract:
A semiconductor device includes a plurality of conductive members including a die pad, a first semiconductor element and a second semiconductor element each located on the die pad, an insulating element electrically connected to the first semiconductor element and the second semiconductor element and insulating the first semiconductor element and the second semiconductor element from each other, and an insulating substrate interposed between the die pad and the insulating element and bonded to the die pad. The insulating element is bonded to the insulating substrate.