公开(公告)号：US08748878B2

公开(公告)日：2014-06-10

申请号：US12709805

申请日：2010-02-22

申请人： Norihiko Yamaguchi ,  Satoshi Taniguchi ,  Hiroko Miyashita ,  Yasuhiro Terai

发明人： Norihiko Yamaguchi ,  Satoshi Taniguchi ,  Hiroko Miyashita ,  Yasuhiro Terai

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/7869

摘要： The present application provides a thin film transistor and a method of manufacturing same capable of suppressing diffusion of aluminum to oxide semiconductor and selectively etching oxide semiconductor and aluminum oxide. The thin film transistor includes: a gate electrode; a channel layer whose main component is oxide semiconductor; a gate insulating film provided between the gate electrode and the channel layer; a sealing layer provided on the side opposite to the gate electrode, of the channel layer; and a pair of electrodes which are in contact with the channel layer and serve as a source and a drain. The sealing layer includes at least a first insulating film made of a first insulating material, and a second insulating film made of a second insulting material having etching selectivity to each of the oxide semiconductor and the first insulating material and provided between the first insulating film and the channel layer.

摘要翻译： 本申请提供了能够抑制铝向氧化物半导体的扩散并选择性地蚀刻氧化物半导体和氧化铝的薄膜晶体管及其制造方法。 薄膜晶体管包括：栅电极; 主要成分是氧化物半导体的沟道层; 设置在所述栅极电极和所述沟道层之间的栅极绝缘膜; 设置在沟道层的与栅电极相对的一侧的密封层; 以及与沟道层接触并用作源极和漏极的一对电极。 所述密封层至少包括由第一绝缘材料制成的第一绝缘膜和由具有对所述氧化物半导体和所述第一绝缘材料中的每一个具有蚀刻选择性的第二绝缘材料制成的第二绝缘膜，并且设置在所述第一绝缘膜和 通道层。

公开(公告)号：US08384080B2

公开(公告)日：2013-02-26

申请号：US12964852

申请日：2010-12-10

申请人： Satoshi Taniguchi ,  Mikihiro Yokozeki ,  Hiroko Miyashita ,  Toshi-kazu Suzuki

发明人： Satoshi Taniguchi ,  Mikihiro Yokozeki ,  Hiroko Miyashita ,  Toshi-kazu Suzuki

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/78693

摘要： A thin film transistor, which is capable of improving carrier mobility, and a display device and an electronic device, each of which uses the thin film transistor, are provided. The thin film transistor includes: a gate electrode; an oxide semiconductor layer including a multilayer film including a carrier travel layer configuring a channel and a carrier supply layer for supplying carriers to the carrier travel layer; a gate insulating film provided between the gate electrode and the oxide semiconductor layer; and a pair of electrodes as a source and a drain. A conduction band minimum level or a valence band maximum level corresponding to a carrier supply source of the carrier supply layer is higher in energy than a conduction band minimum level or a valence band maximum level corresponding to a carrier supply destination of the carrier travel layer.

摘要翻译： 提供能够提高载流子迁移率的薄膜晶体管，以及各自使用薄膜晶体管的显示装置和电子装置。 薄膜晶体管包括：栅电极; 包括多层膜的氧化物半导体层，所述多层膜包括构成沟道的载流子行进层和用于向所述载体行进层供给载体的载体供给层; 设置在所述栅电极和所述氧化物半导体层之间的栅极绝缘膜; 以及一对电极作为源极和漏极。 与载波供电层的载波供给源对应的导带最小电平或价带最大电平的能量高于对应于载波行进层的载波供给目的地的导带最小电平或价带最大电平。

公开(公告)号：US20110180793A1

公开(公告)日：2011-07-28

申请号：US13006736

申请日：2011-01-14

申请人： Satoshi Taniguchi

发明人： Satoshi Taniguchi

IPC分类号： H01L29/12 ,  H01L21/336 ,  H01L33/16

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78696

摘要： There is provided a thin film transistor including: a gate electrode; a pair of source/drain electrodes; a first oxide semiconductor layer provided between the gate electrode, and the pair of source/drain electrodes, and forming a channel; and a second oxide semiconductor layer provided on the pair of source/drain electrodes side of the first oxide semiconductor layer, and having a polarity different from that of the first oxide semiconductor layer.

摘要翻译： 提供一种薄膜晶体管，包括：栅电极; 一对源极/漏极; 设置在所述栅极电极和所述一对源极/漏极电极之间并形成沟道的第一氧化物半导体层; 以及设置在所述第一氧化物半导体层的所述一对源极/漏极侧的第二氧化物半导体层，并且具有与所述第一氧化物半导体层的极性不同的极性。

公开(公告)号：US07709353B2

公开(公告)日：2010-05-04

申请号：US11893458

申请日：2007-08-16

申请人： Hideki Ono ,  Satoshi Taniguchi

发明人： Hideki Ono ,  Satoshi Taniguchi

IPC分类号： H01L21/46

CPC分类号： H01L21/78 ,  H01L21/6835 ,  H01L23/66 ,  H01L24/19 ,  H01L24/25 ,  H01L24/73 ,  H01L24/82 ,  H01L24/91 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/30105 ,  H01L2924/3511 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2224/82 ,  H01L2924/00

摘要： A method for producing a semiconductor device includes the steps of forming a predetermined device in a device layer grown on a semiconductor substrate with a sacrificial layer provided therebetween; and removing the sacrificial layer by etching to separate the semiconductor substrate from the device layer while a supporting substrate is bonded to the side of the device layer, wherein in the step of removing the sacrificial layer, a groove extending from the device layer to the sacrificial layer is formed before the sacrificial layer is removed, and the etching solution is allowed to penetrate to the sacrificial layer through the groove.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体衬底上生长的器件层中形成预定的器件，其中设置有牺牲层; 以及通过蚀刻去除所述牺牲层，同时将所述半导体衬底与所述器件层分离，同时将支撑衬底接合到所述器件层的侧面，其中在去除所述牺牲层的步骤中，从所述器件层延伸到牺牲层 在除去牺牲层之前形成层，并且允许蚀刻溶液通过沟槽穿透到牺牲层。

公开(公告)号：US07160766B2

公开(公告)日：2007-01-09

申请号：US10772375

申请日：2004-02-06

申请人： Satoshi Taniguchi ,  Toshikazu Suzuki ,  Hideki Ono ,  Jun Araseki

发明人： Satoshi Taniguchi ,  Toshikazu Suzuki ,  Hideki Ono ,  Jun Araseki

IPC分类号： H01L21/338

CPC分类号： H01L29/66462 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1−x−yN, wherein x+y=1, 0≦x≦1, and 0≦y≦1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.

摘要翻译： 一种场效应半导体器件的制造方法包括以下步骤：在由式Al x Y y表示的基于氮化镓的化合物半导体构成的半导体层上形成栅电极， 其中x + y = 1,0 <= x <= 1，0 <= y <= 1; 并且使用栅电极作为掩模，通过自对准形成源电极和漏电极。 还公开了通过该方法制造的场效应半导体器件。

公开(公告)号：US06651615B2

公开(公告)日：2003-11-25

申请号：US09918473

申请日：2001-08-01

申请人： Hisao Suzuki ,  Terutoshi Tomoda ,  Mutsumi Kanda ,  Toshimi Kashiwagura ,  Fumito Chiba ,  Sachio Mori ,  Satoshi Taniguchi

发明人： Hisao Suzuki ,  Terutoshi Tomoda ,  Mutsumi Kanda ,  Toshimi Kashiwagura ,  Fumito Chiba ,  Sachio Mori ,  Satoshi Taniguchi

IPC分类号： F02B500

CPC分类号： F02B17/005 ,  F02B23/101 ,  F02B2023/085 ,  F02B2023/103 ,  F02B2023/106 ,  F02B2075/125 ,  F02B2275/48 ,  F02F1/242 ,  F02F3/26 ,  F02F2001/245 ,  Y02T10/123 ,  Y02T10/125

摘要： A direct fuel injection-type spark-ignition internal combustion engine is disclosed. The engine comprises a fuel injector for injecting fuel as a spray in nearly the shape of a fan having a relative small thickness, a spark plug and a cavity formed on the top surface of a piston. The cavity has a long and narrow groove-like shape. The spray is injected by the fuel injector such that the spray is almost parallel with the center axis of the piston, and impinges in the cavity. The spark plug is arranged in the upper portion of the cylinder to face the cavity.

摘要翻译： 公开了一种直接燃油喷射型点火式内燃机。 发动机包括燃料喷射器，用于喷射几乎具有相对较小厚度的风扇形式的喷雾器，火花塞和形成在活塞顶表面上的空腔。 空腔具有长而窄的凹槽形状。 喷射器被燃料喷射器喷射，使得喷射器几乎与活塞的中心轴平行，并且撞击到空腔中。 火花塞布置在气缸的上部以面对空腔。

公开(公告)号：US5867321A

公开(公告)日：1999-02-02

申请号：US700397

申请日：1996-12-13

申请人： Kenichi Nakama ,  Satoshi Taniguchi ,  Kenjiro Hamanaka ,  Hiroshi Hamada

发明人： Kenichi Nakama ,  Satoshi Taniguchi ,  Kenjiro Hamanaka ,  Hiroshi Hamada

IPC分类号： G02B3/00 ,  G02B27/10 ,  G09F9/00

CPC分类号： G02B3/0087 ,  G02B3/0012 ,  G02B3/0056 ,  Y10S359/90

摘要： A microlens array of high converging efficiency is provided, independently of the array and lens filling rate of microlens arrays, with a method of manufacturing microlens arrays using the diffusion process. A multitude of refractive-index distribution type microlenses formed by diffusing in a planar transparent substrate a substance contributing to increasing the refractive index of the substrate are two-dimensionally and regularly arranged on the surface of the substrate. The microlenses are densely arranged on the surface of the substrate, and diffusion fronts of the microlenses form regions where the diffusion fronts are fused with those of the adjoining microlenses. The length of a region where certain two adjoining microlenses are fused together, in the direction of a straight line connecting the centers of the two microlenses is less than 20% of the array pitch of the microlenses in the above-mentioned direction.

摘要翻译： PCT No.PCT / JP95 / 02681 Sec。 371日期1996年12月13日第 102（e）日期1996年12月13日PCT 1995年12月26日PCT PCT。 公开号WO96 / 21169 日期1996年7月11日提供了一种高收敛效率的微透镜阵列，与微透镜阵列的阵列和透镜填充率无关，具有使用扩散过程制造微透镜阵列的方法。 通过在平面透明基板中漫射形成的多个折射率分布型微透镜，有助于提高基板的折射率的物质被二维规则地布置在基板的表面上。 微透镜密集地布置在衬底的表面上，并且微透镜的扩散前沿形成区域，其中扩散前沿与邻接的微透镜的那些熔融。 在连接两个微透镜的中心的直线的方向上将某些两个相邻的微透镜熔合在一起的区域的长度小于上述方向上的微透镜的阵列间距的20％。

公开(公告)号：US4031496A

公开(公告)日：1977-06-21

申请号：US485626

申请日：1974-07-03

申请人： Hideo Fujiwara ,  Yukio Ichinose ,  Satoshi Taniguchi ,  Tsutomu Kobayashi ,  Kazuo Ichino ,  Michiyasu Itoh ,  Yasutaro Uesaka ,  Fumiyuki Inose ,  Sadayasu Ueno

发明人： Hideo Fujiwara ,  Yukio Ichinose ,  Satoshi Taniguchi ,  Tsutomu Kobayashi ,  Kazuo Ichino ,  Michiyasu Itoh ,  Yasutaro Uesaka ,  Fumiyuki Inose ,  Sadayasu Ueno

IPC分类号： G01D5/20 ,  G01D5/22 ,  H01F21/06 ,  H01F29/10

CPC分类号： H01F21/06 ,  G01D5/2046 ,  G01D5/2258 ,  H01F29/10

摘要： A variable inductor wherein two closed magnetic circuits each having a predetermined gap in one place are constructed of a movable magnetic core and a fixed magnetic core. When the movable magnetic core is moved, the opposite area between both the magnetic cores in one of the closed magnetic circuits increases, while the opposite area between both the magnetic cores in the other closed magnetic circuit decreases. Thus, the inductances of coils wound around parts of the respective closed magnetic circuits vary complementarily.

摘要翻译： 一种可变电感器，其中在一个位置具有预定间隙的两个闭合磁路由可移动磁芯和固定磁芯构成。 当可移动磁芯移动时，一个闭合磁路中的两个磁芯之间的相对区域增加，而另一个闭合磁路中的两个磁芯之间的相对区域减小。 因此，缠绕在各个闭合磁路的一部分上的线圈的电感互补地变化。

公开(公告)号：US3952567A

公开(公告)日：1976-04-27

申请号：US586813

申请日：1975-06-13

申请人： Kiminari Shinagawa ,  Sadao Hishiyama ,  Shinichi Ito ,  Kunifusa Kayama ,  Satoshi Taniguchi

发明人： Kiminari Shinagawa ,  Sadao Hishiyama ,  Shinichi Ito ,  Kunifusa Kayama ,  Satoshi Taniguchi

IPC分类号： C01G49/02 ,  C01G49/00 ,  C04B35/26 ,  G01N27/12 ,  G01N27/04

CPC分类号： G01N27/12

摘要： A gas sensor comprising as a gas sensible material a spinel-type ferrite represented by the general formula AFe.sub.2 O.sub.4 in which A stands for at least one member selected from the group consisting of Li, Mg, Mn, Fe, Co, Ni, Cu, Zn and Pb is provided. In many cases, a catalyzer or a recovering agent need not be incorporated in this gas sensor, and it is characterized in that it is hardly influenced by moisture in the atmosphere.

摘要翻译： 一种气体传感器，其特征在于，作为气体感知材料，由通式AFe 2 O 4表示的尖晶石型铁氧体，A表示选自Li，Mg，Mn，Fe，Co，Ni，Cu，Zn 并提供Pb。 在许多情况下，催化剂或回收剂不需要并入该气体传感器中，其特征在于其几乎不受气氛中的水分的影响。

公开(公告)号：US09850867B2

公开(公告)日：2017-12-26

申请号：US14367620

申请日：2012-12-19

申请人： Kouseki Sugiyama ,  Satoshi Taniguchi ,  Masahiko Masubuchi ,  Hiroshi Eto

发明人： Kouseki Sugiyama ,  Satoshi Taniguchi ,  Masahiko Masubuchi ,  Hiroshi Eto

IPC分类号： F02D19/00 ,  F02M47/02 ,  F02D41/06 ,  F02D41/40 ,  F02D41/00 ,  F02M21/02 ,  F02D19/06 ,  F02D19/02 ,  F02D41/38 ,  F02P5/15 ,  F02D13/02

CPC分类号： F02M47/02 ,  F02D13/02 ,  F02D19/022 ,  F02D19/029 ,  F02D19/0647 ,  F02D41/0027 ,  F02D41/0047 ,  F02D41/062 ,  F02D41/3845 ,  F02D41/40 ,  F02D2041/001 ,  F02D2200/0602 ,  F02D2200/0612 ,  F02M21/0239 ,  F02P5/1502 ,  Y02T10/32 ,  Y02T10/44

摘要： In a control system that includes a pressure accumulating portion that supplies CNG to a fuel injection valve and a regulator that adjusts a pressure in the pressure accumulating portion to a set pressure and of which a valve element opens when CNG is supplied to the pressure accumulating portion and closes when supply of CNG to the pressure accumulating portion is shut off, a control parameter relating to a combustion state in an internal combustion engine is controlled on the basis of a length of a period during which an opening degree of the valve element reduces from a first predetermined opening degree to a second predetermined opening degree when the pressure in the pressure accumulating portion is adjusted to the set pressure by the regulator.