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    PHOTOACID GENERATOR AND PHOTORESIST COMPRISING SAME
    24.
    发明申请
    PHOTOACID GENERATOR AND PHOTORESIST COMPRISING SAME 有权
    光电发生器和包含相同的光电发生器

    公开(公告)号：US20130171567A1

    公开(公告)日：2013-07-04

    申请号：US13711679

    申请日：2012-12-12

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Emad Aqad ,  Cheng-Bai Xu ,  Mingqi Li ,  William Williams, III

    IPC: C07D493/18 ,  G03F7/027

    CPC classification number: C07D493/18 ,  G03F7/0045 ,  G03F7/027 ,  G03F7/0392

    Abstract: A photoacid generator includes those of formula (I): wherein each Ra in formula 1 is independently H, F, a C1-10 nonfluorinated organic group, C1-10 fluorinated organic group, or a combination comprising at least one of the foregoing, provided at least one Ra is F or a C1-10 fluorinated organic group, the C1-10 fluorinated and nonfluorinated organic groups each optionally comprising O, S, N, or a combination comprising at least one of the foregoing heteroatoms; L1 is a linking group comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing; G+ is an onium salt of the formula (II): wherein in formula (II), X is S or I, each R0 is independently C1-30 alkyl group; a polycyclic or monocyclic C3-30 cycloalkyl group; a polycyclic or monocyclic C4-30 aryl group; or a combination comprising at least one of the foregoing, provided at least one R0 is substituted where each R0 is a C6 monocyclic aryl group, and wherein when X is I, a is 2, and where X is S, a is 3, p is 0 or 1, and q is an integer of from 1 to 10.

    Abstract translation: 一种光酸产生剂包括式（I）的那些：其中式1中的每个Ra独立地是H，F，C 1-10非氟化有机基团，C 1-10氟化有机基团或包含至少一个上述的组合， 至少一个R a为F或C 1-10氟化有机基团，所述C 1-10氟化和非氟化有机基团各自任选包含O，S，N或包含至少一个前述杂原子的组合; L 1是包含O，S，N，F的杂原子的连接基团，或包含前述的至少一种的组合; G +是式（II）的鎓盐：其中在式（II）中，X是S或I，每个R 10独立地是C 1-30烷基; 多环或单环C 3-30环烷基; 多环或单环C 4-30芳基; 或包含前述的至少一种的组合，只要至少一个R 0被取代，其中每个R 0是C 6单环芳基，其中当X是I时，a是2，并且其中X是S，a是3，p 为0或1，q为1至10的整数。

    PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS
    30.
    发明申请
    PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS 有权

    公开(公告)号：US20220137506A1

    公开(公告)日：2022-05-05

    申请号：US17084993

    申请日：2020-10-30

    Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

    Inventor： Tomas Marangoni ,  Emad Aqad ,  James W. Thackeray ,  James F. Cameron ,  Xisen Hou ,  ChoongBong Lee

    IPC: G03F7/004

    Abstract: A photoresist composition, comprising an acid-sensitive polymer comprising a repeating unit having an acid-labile group; an iodonium salt comprising an anion and a cation, the iodonium salt having Formula (1): wherein Z− is an organic anion; Ar1 is substituted or unsubstituted C4-60 heteroaryl group comprising a furan heterocycle; and R1 is substituted or unsubstituted hydrocarbon group as provided herein, wherein the cation optionally comprises an acid-labile group, wherein Ar1 and R1 are optionally connected to each other via a single bond or one or more divalent linking groups to form a ring, and wherein the iodonium salt is optionally covalently bonded through Ar1 or substituent thereof as a pendant group to a polymer, the iodonium salt is optionally covalently bonded through R1 or substituent thereof as a pendant group to a polymer, or the iodonium salt is optionally covalently bonded through Z− as a pendant group to a polymer; and a solvent.

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