Abstract:
A molecular glass compound comprises a vinyl ether adduct of an aromatic vinyl ether of formula C(R1)2═C(R2)—O-(L)n-Ar1, and a calix[4]arene, wherein R1 and R2 are each independently a single bond, H, C1-20 alkyl, C1-20 haloalkyl, C6-20 aryl, C6-20 haloaryl, C7-20 aralkyl, or C7-20 haloaralkyl, L is a C1-20 linking group, n is 0 or 1, and Ar1 is a halo-containing monocyclic, or substituted or unsubstituted polycyclic or fused polycyclic C6-20 aromatic-containing moiety, wherein R1 and R2 are connected to Ar1 when either or both of R1 and R2 is a single bond and n is 0. A photoresist, comprising the molecular glass compound, a solvent, and a photoacid generator, a coated substrate, comprising (a) a substrate having one or more layers to be patterned on a surface thereof; and (b) a layer of a photoresist composition over the one or more layers to be patterned, and a method of forming the molecular glass compound, are also disclosed.
Abstract:
A photoresist composition comprising: a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group; a second polymer comprising a first repeating unit comprising an acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a base-soluble group, wherein the base-soluble group has a pKa of less than or equal to 12, and wherein the base-soluble group does not comprise a hydroxy-substituted aryl group; a photoacid generator; and a solvent, wherein the first polymer and the second polymer are different from each other.
Abstract:
New monomer and polymer materials that comprise one or more Te atoms. In one aspect, tellurium-containing monomers and polymers are provided that are useful for Extreme Ultraviolet Lithography.
Abstract:
A copolymer is prepared by the polymerization of monomers that include an ultraviolet absorbing monomer, and a base-solubility-enhancing monomer. The copolymer is useful for forming a topcoat layer for electron beam and extreme ultraviolet lithographies. Also described are a layered article including the topcoat layer, and an associated method of forming an electronic device.
Abstract:
Disclosed herein is a photoresist composition comprising a graft block copolymer; a solvent and a photoacid generator; where the graft block copolymer comprises a first block polymer; the first block polymer comprising a backbone polymer and a first graft polymer; where the first graft polymer comprises a surface energy reducing moiety that comprises a halocarbon moiety or a silicon containing moiety; and a second block polymer; the second block polymer being covalently bonded to the first block; wherein the second block comprises the backbone polymer and a second graft polymer; where the second graft polymer comprises a functional group that is operative to undergo deprotection and alter the solubility of the graft block copolymer; where the graft block copolymer has a bottle brush topology.
Abstract:
A photoresist composition includes a first polymer in which at least half of the repeat units are photoacid-generating repeat units, and a second polymer that exhibits a change in solubility in an alkali developer under the action of acid. In the first polymer, each of the photoacid-generating repeat units comprises photoacid-generating functionality and base-solubility-enhancing functionality.
Abstract:
A polymer includes repeat units, most of which are photoacid-generating repeat units. Each of the photoacid-generating repeat units includes photoacid-generating functionality and base-solubility-enhancing functionality. Each of the photoacid-generating repeat units comprises an anion and a photoacid-generating cation that collectively have structure (I) wherein q, r, R1, m, X, and Z− are defined herein. The polymer is useful as a component of a photoresist composition that further includes a second polymer that exhibits a change in solubility in an alkali developer under action of acid.
Abstract:
A polymer includes repeat units, at least half of which are photoacid-generating repeat units. Each of the photoacid-generating repeat units includes photoacid-generating functionality and base-solubility-enhancing functionality. The polymer is useful as a component of a photoresist composition that further includes a second polymer that exhibits a change in solubility in an alkali developer under action of acid.
Abstract:
Disclosed herein is a photoresist composition comprising a graft block copolymer; a solvent and a photoacid generator; where the graft block copolymer comprises a first block polymer; the first block polymer comprising a backbone polymer and a first graft polymer; where the first graft polymer comprises a surface energy reducing moiety that comprises a halocarbon moiety or a silicon containing moiety; and a second block polymer; the second block polymer being covalently bonded to the first block; wherein the second block comprises the backbone polymer and a second graft polymer; where the second graft polymer comprises a functional group that is operative to undergo deprotection and alter the solubility of the graft block copolymer; where the graft block copolymer has a bottle brush topology.