公开(公告)号：US20150187575A1

公开(公告)日：2015-07-02

申请号：US14580566

申请日：2014-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yuhei Sato ,  Yasumasa Yamane ,  Yoshinori Yamada ,  Tetsunori Maruyama

IPC: H01L21/02 ,  C23C14/35 ,  C23C14/34

CPC classification number: H01L21/02631 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/35 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/0262 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method of forming an oxide semiconductor includes a step of depositing an oxide semiconductor layer over a substrate by using a sputtering apparatus in which in a target containing indium, an element M (aluminum, gallium, yttrium, or tin), zinc, and oxygen, the substrate which faces a surface of the target, and a magnet unit comprising a first magnet and a second magnet on a rear surface side of the target are provided. In the method, deposition is performed under a condition that a maximum intensity of a horizontal magnetic field is greater than or equal to 350 G and less than or equal to 2000 G in a plane where a vertical distance toward the substrate from a surface of the magnet unit is 10 mm.

Abstract translation: 形成氧化物半导体的方法包括通过使用溅射装置在衬底上沉积氧化物半导体层的步骤，其中在含有铟的元素M（铝，镓，钇或锡），锌和氧元素 设置面向靶的表面的基板，以及在靶的背面侧具有第一磁体和第二磁体的磁体单元。 在该方法中，在水平磁场的最大强度大于或等于350G且小于或等于2000G的条件下，在从基板的表面垂直距离的平面中进行沉积 磁体单位为10 mm。

公开(公告)号：US20150179810A1

公开(公告)日：2015-06-25

申请号：US14575052

申请日：2014-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Tetsuhiro Tanaka ,  Masashi Tsubuku ,  Toshihiko Takeuchi ,  Ryo Tokumaru ,  Mitsuhiro Ichijo ,  Satoshi Toriumi ,  Takashi Ohtsuki ,  Toshiya Endo

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes.

Abstract translation: 抑制了电特性的变化，并且提高了使用包括氧化物半导体的晶体管的半导体器件的可靠性。 半导体器件包括绝缘表面上的氧化物半导体膜，绝缘表面上的抗氧化膜和氧化物半导体膜，与抗氧化膜接触的一对电极，一对电极上的栅极绝缘膜，以及栅极 电极，其在栅极绝缘膜上方并与氧化物半导体膜重叠。 在抗氧化剂膜中，与该对电极重叠的区域的宽度比不与该对电极重叠的区域的宽度长。

公开(公告)号：US12051726B2

公开(公告)日：2024-07-30

申请号：US17550646

申请日：2021-12-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Daisuke Yamaguchi ,  Shinobu Kawaguchi ,  Yoshihiro Komatsu ,  Toshikazu Ohno ,  Yasumasa Yamane ,  Tomosato Kanagawa

IPC: H01L29/26 ,  H10B12/00

CPC classification number: H01L29/26 ,  H10B12/0335 ,  H10B12/05 ,  H10B12/31

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

公开(公告)号：US11616149B2

公开(公告)日：2023-03-28

申请号：US16768810

申请日：2018-11-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Takuya Handa ,  Yasuharu Hosaka ,  Shota Sambonsuge ,  Yasumasa Yamane ,  Kenichi Okazaki

IPC: H01L29/786 ,  H01L29/24

Abstract: A semiconductor device with improved reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, and an insulator over the third oxide. The second oxide contains In, an element M (M is Al, Ga, Y, or Sn), and Zn. The first oxide and the third oxide each include a region whose In concentration is lower than that in the second oxide.

公开(公告)号：US11380799B2

公开(公告)日：2022-07-05

申请号：US16571769

申请日：2019-09-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yasumasa Yamane ,  Yuhei Sato ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  C23C14/08 ,  C23C14/34 ,  H01L27/12 ,  H01L21/02

Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

公开(公告)号：US11211467B2

公开(公告)日：2021-12-28

申请号：US16755208

申请日：2018-10-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tomoki Hiramatsu ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Shota Sambonsuge ,  Yasumasa Yamane ,  Yuta Endo

IPC: H01L29/51 ,  H01L21/8238

Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first insulator; a first oxide provided over the first insulator; a second oxide provided over the first oxide; a first conductor and a second conductor provided apart from each other over the second oxide; a third oxide provided over the second oxide, the first conductor, and the second conductor; a second insulating film provided over the third oxide; and a third conductor provided over the second oxide with the third oxide and the second insulating film positioned therebetween. The third oxide contains a metal element and nitrogen, and the metal element is bonded to nitrogen.

公开(公告)号：US11133402B2

公开(公告)日：2021-09-28

申请号：US16778103

申请日：2020-01-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Ryo Tokumaru ,  Yasumasa Yamane ,  Akihisa Shimomura ,  Naoki Okuno

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/786 ,  H01L29/45 ,  H01L29/49 ,  H01L27/12

Abstract: To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.

公开(公告)号：US10600918B2

公开(公告)日：2020-03-24

申请号：US15211218

申请日：2016-07-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Toshihiko Takeuchi ,  Yasumasa Yamane

IPC: H01L29/12 ,  H01L29/51 ,  H01L27/12 ,  H01L29/786 ,  H01L29/06 ,  H01L29/66 ,  H01L29/49 ,  H01L29/423 ,  H01L29/78

Abstract: Provided is a semiconductor device having a structure with which a decrease in electrical characteristics that becomes more significant with miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film, a gate electrode overlapping with the first oxide semiconductor film, a first gate insulating film between the first oxide semiconductor film and the gate electrode, and a second gate insulating film between the first gate insulating film and the gate electrode. In the first gate insulating film, a peak appears at a diffraction angle 2θ of around 28° by X-ray diffraction. A band gap of the first oxide semiconductor film is smaller than a band gap of the first gate insulating film, and the band gap of the first gate insulating film is smaller than a band gap of the second gate insulating film.

公开(公告)号：US10600875B2

公开(公告)日：2020-03-24

申请号：US15628945

申请日：2017-06-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tsutomu Murakawa ,  Toshihiko Takeuchi ,  Hiroki Komagata ,  Hiromi Sawai ,  Yasumasa Yamane ,  Shota Sambonsuge ,  Kazuya Sugimoto ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/24 ,  H01L29/788 ,  H01L27/12 ,  H01L29/66

Abstract: A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.

公开(公告)号：US10290745B2

公开(公告)日：2019-05-14

申请号：US15632764

申请日：2017-06-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Ryo Tokumaru ,  Yuhei Sato ,  Kazuhiro Tsutsui

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  C23C14/08 ,  C23C14/34 ,  H01L27/12

Abstract: A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.