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    Flip chip type light emitting diode chip
    22.
    发明授权
    Flip chip type light emitting diode chip 有权

    公开(公告)号：US11411142B2

    公开(公告)日：2022-08-09

    申请号：US17025273

    申请日：2020-09-18

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Tae Jun Park ,  Sang Won Woo

    IPC: H01L33/40 ,  H01L51/10 ,  H01S5/125

    Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).

    Light emitting diode chip having distributed Bragg reflector
    23.
    发明授权
    Light emitting diode chip having distributed Bragg reflector 有权

    公开(公告)号：US10804437B2

    公开(公告)日：2020-10-13

    申请号：US15767284

    申请日：2016-06-17

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ye Seul Kim ,  Sang Won Woo ,  Kyoung Wan Kim

    IPC: H01L33/46 ,  H01L33/50 ,  G02B6/293

    Abstract: A light emitting diode chip including a light emitting structure having an active layer, and a distributed Bragg reflector (DBR) disposed to reflect light emitted therefrom. The DBR has first and second regions, and a third region therebetween. The first region is closer to the light emitting structure than the second and third regions. The DBR includes first material layers having a high index of refraction and second material layers having a low index of refraction alternately disposed one over another. The first material layers include first, second, and third groups having an optical thickness greater than 0.25λ+10%, in a range of 0.25λ−10% to 0.25λ+10%, and less than 0.25λ−10%, respectively. With respect to a central wavelength (λ: 554 nm) of the visible range, the first region has the first and second groups, the second region has the third group, and the third region has the second and third groups.

    Ultraviolet light emitting device having current blocking layer
    24.
    发明授权
    Ultraviolet light emitting device having current blocking layer 有权

    公开(公告)号：US10340418B2

    公开(公告)日：2019-07-02

    申请号：US15865051

    申请日：2018-01-08

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Ji Hye Kim ,  Sang Won Woo

    IPC: H01L33/46 ,  H01L33/14 ,  H01L33/40 ,  H01L33/20 ,  H01L33/38

    Abstract: Described herein is a highly efficient light emitting device. The light emitting device includes: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a current blocking layer disposed on the second conductivity-type semiconductor layer; a transparent electrode layer covering the current blocking layer; a first electrode electrically connected to the first conductivity-type semiconductor layer; a second electrode disposed on the transparent electrode layer and electrically connected to the transparent electrode layer, the second electrode including a second electrode pad and a second electrode extension extending from the second electrode pad; and a second reflective layer interposed between the second electrode and the transparent electrode layer, wherein each of the second electrode pad and the second electrode extension covers at least part of the current blocking layer.

    Compact light emitting diode chip, light emitting device and electronic device including the same
    26.
    发明授权
    Compact light emitting diode chip, light emitting device and electronic device including the same 有权

    公开(公告)号：US10126831B2

    公开(公告)日：2018-11-13

    申请号：US15279549

    申请日：2016-09-29

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Sang Won Woo ,  Ji Hye Kim

    IPC: G06F3/02 ,  H01H13/83 ,  H01L33/38 ,  H01L33/46

    Abstract: A light emitting diode chip used in devices includes: a substrate including protrusions disposed on an upper surface; a light emitting structure disposed on the substrate and including at least one hole through a second conductive type semiconductor layer and an active layer and partially exposing a first conductive type semiconductor layer; a contact electrode including an optically transparent conductive oxide; a light reflective insulation layer including a distributed Bragg reflector; a first pad electrode electrically connected to the first conductive type semiconductor layer; and a second pad electrode electrically connected to the contact electrode, wherein a portion of an upper surface of the substrate is exposed around the light emitting structure, the light reflective insulation layer adjoins the exposed portion of the upper surface of the substrate around the light emitting structure, and an upper edge of the substrate is spaced from the light reflective insulation layer.

    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD
    30.
    发明申请
    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD 有权
    具有电极板的发光二极管芯片

    公开(公告)号：US20150236210A1

    公开(公告)日：2015-08-20

    申请号：US14630273

    申请日：2015-02-24

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

    IPC: H01L33/38 ,  H01L33/42 ,  H01L33/00 ,  H01L33/10

    CPC classification number: H01L33/387 ,  H01L33/0008 ,  H01L33/10 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L2933/0016 ,  H01L2933/0066

    Abstract: Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer, a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer, a second electrode pad electrically connected to the second conductive type semiconductor layer, and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

    Abstract translation: 本文公开在包括电极焊盘的LED芯片中。 LED芯片包括：第一导电型半导体层，第一导电类型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠， 位于与第二导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘，从第一电极焊盘延伸并连接到第一导电类型半导体层的第一电极延伸部，与第二导电类型半导体层电连接的第二电极焊盘 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。

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