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    Semiconductor device and method of manufacturing the same
    21.
    再颁专利
    Semiconductor device and method of manufacturing the same 有权

    公开(公告)号：USRE47188E1

    公开(公告)日：2019-01-01

    申请号：US14722959

    申请日：2015-05-27

    Applicant: Sony Corporation

    Inventor： Rintaro Koda ,  Takahiro Arakida ,  Yuji Masui ,  Tomoyuki Oki

    IPC: H01L31/12 ,  H01S5/026 ,  H01S5/183 ,  H01S5/042

    Abstract: The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.

    Light-emitting element
    25.
    发明授权
    Light-emitting element 有权
    发光元件

    公开(公告)号：US09252565B2

    公开(公告)日：2016-02-02

    申请号：US14518382

    申请日：2014-10-20

    Applicant: Sony Corporation

    Inventor： Tomoyuki Oki ,  Yuji Masui ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Takahiro Arakida

    IPC: H01S5/00 ,  H01S5/125 ,  B82Y20/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/18 ,  H01S5/22 ,  H01S5/343

    CPC classification number: H01S5/18308 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/125 ,  H01S5/18 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/187 ,  H01S5/22 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/343 ,  H01S5/34313 ,  H01S5/3432 ,  H01S2301/176 ,  H01S2301/18

    Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

    Abstract translation: 发光元件包括台面结构，其中第一导电类型的第一化合物半导体层，有源层和第二导电类型的第二化合物半导体层以该顺序设置，其中第一 化合物半导体层和第二化合物半导体层具有由从台面结构的侧壁部向内延伸的绝缘区域包围的电流收缩区域; 设置成围绕台面结构的壁结构; 连接台面结构和壁结构的至少一个桥结构，壁结构和桥结构各自具有与设置绝缘区域的台面结构部分相同的层结构; 第一电极; 以及设置在所述壁结构的顶面上的第二电极。

    Semiconductor optical amplifier
    29.
    再颁专利
    Semiconductor optical amplifier 有权
    半导体光放大器

    公开(公告)号：USRE45973E1

    公开(公告)日：2016-04-12

    申请号：US14614652

    申请日：2015-02-05

    Applicant: Sony Corporation ,  Tohoku University

    Inventor： Masaru Kuramoto ,  Masao Ikeda ,  Rintaro Koda ,  Tomoyuki Oki ,  Hideki Watanabe ,  Takao Miyajima ,  Hiroyuki Yokoyama

    IPC: H01S5/00 ,  H01S5/10 ,  H01S5/16 ,  H01S5/323 ,  H01S5/50

    CPC classification number: H01S5/1064 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0657 ,  H01S5/16 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/50

    Abstract: A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.

    Abstract translation: 半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层 由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。 层叠结构具有脊形条纹结构。 当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。 载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

    LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    30.
    发明申请
    LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号：US20150043603A1

    公开(公告)日：2015-02-12

    申请号：US14345289

    申请日：2012-09-04

    Applicant: Sony Corporation

    Inventor： Masaru Kuramoto ,  Rintaro Koda ,  Hideki Watanabe

    IPC: H01S5/22 ,  H01S5/32 ,  H01S5/20 ,  H01S5/50 ,  H01S5/343

    CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/141 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/209 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/309 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34333 ,  H01S5/50 ,  H01S2301/166 ,  H01S2301/176

    Abstract: Provided is a high-output light-emitting device capable of emitting a light beam in a single mode. The light-emitting device includes a laminate structure body configured by laminating, in order, a first compound semiconductor layer, an active layer, and a second compound semiconductor layer on a base substrate, a second electrode, and a first electrode. The first compound semiconductor layer has a laminate structure including a first cladding layer and a first light guide layer in order from the base substrate, and the laminate structure body has a ridge stripe structure configured of the second compound semiconductor layer, the active layer, and a portion in a thickness direction of the first light guide layer. Provided that a thickness of the first light guide layer is t1, and a thickness of the portion configuring the ridge stripe structure of the first light guide layer is t1′, 6×10−7 m

    Abstract translation: 提供能够以单一模式发射光束的高输出发光装置。 发光装置包括层叠结构体，其通过在基底基板，第二电极和第一电极上依次层叠第一化合物半导体层，有源层和第二化合物半导体层而构成。 第一化合物半导体层具有从基底依次依次包括第一包层和第一导光层的叠​​层结构，层叠结构体具有由第二化合物半导体层，有源层和 第一导光层的厚度方向的一部分。 假设第一导光层的厚度为t1，构成第一导光层的脊条结构的部分的厚度为t1'，6×10-7m

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