公开(公告)号：US20150104932A1

公开(公告)日：2015-04-16

申请号：US14573845

申请日：2014-12-17

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Young Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

IPC: H01L21/02 ,  H01L27/115 ,  C09K13/06

CPC classification number: H01L21/02658 ,  C09K13/04 ,  C09K13/06 ,  C23F1/16 ,  H01L21/31111 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

Abstract: Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Abstract translation: 提供蚀刻组合物。 蚀刻组合物包括磷酸，铵离子和硅化合物。 硅化合物包括硅原子，具有与硅原子结合的氨基的原子团以及与硅原子结合的至少两个氧原子。 还提供了利用蚀刻组合物的方法。

公开(公告)号：US20140291421A1

公开(公告)日：2014-10-02

申请号：US14187556

申请日：2014-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeokHoon Kim ,  Yongmyung Jun ,  Yongsun Ko ,  Kyoungseob Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Jihoon Jeong ,  Yong-Jhin Cho

IPC: B05B1/14

CPC classification number: H01L21/6708 ,  H01L21/67017 ,  H01L21/67051

Abstract: Provided is a substrate treating apparatus including a housing; a plurality of opening-and-closing members configured to provide a driving force for opening and closing the housing; a fluid storing member supplying a fluid to the opening-and-closing members; and a fluid distribution unit connected to the fluid storing member via a supply conduit to distribute the fluid supplied from the fluid storing member to the opening-and-closing members. The fluid distribution unit includes a distribution conduit diverging from the supply conduit and connected to a corresponding one of the opening-and-closing members; and a fluid distribution member provided at a junction between the supply conduit and the distribution conduit.

Abstract translation: 提供一种基板处理装置，包括壳体; 多个打开和关闭构件，其构造成提供用于打开和关闭壳体的驱动力; 向开闭部件供给流体的流体存储部件; 以及流体分配单元，其经由供应管道连接到流体存储构件，以将从流体存储构件供应的流体分配到打开和关闭构件。 流体分配单元包括从供应导管分支并连接到相应的一个打开和关闭构件的分配管道; 以及设置在供应管道和分配管道之间的接合处的流体分配构件。

公开(公告)号：US11342203B2

公开(公告)日：2022-05-24

申请号：US16739409

申请日：2020-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon Jeong ,  Mihyun Park ,  Yongsun Ko ,  Kwangwook Lee ,  Kuntack Lee ,  Hayoung Jeon ,  Yongjhin Cho ,  Jihoon Cha

IPC: H01L21/02 ,  H01L21/67

Abstract: A substrate cleaning apparatus includes a support inside a chamber to hold a substrate, a first supply source inside the chamber that includes a first nozzle along a first direction and facing an upper surface of the support, the first nozzle to spray polymer and solvent onto the substrate to form a coating, and a second nozzle at an oblique angle to the first direction and facing an edge of the support to inject a hot gas toward the coating to volatilize the solvent, a second supply source inside the chamber and having a third nozzle facing the upper surface of the support to inject a peeling treatment to the coating to peel the coating from the substrate, and a third supply source inside the chamber and facing a lower surface of the support to inject the hot gas to heat a second surface of the substrate.

公开(公告)号：US20170207066A1

公开(公告)日：2017-07-20

申请号：US15133989

申请日：2016-04-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kijong PARK ,  Jun-Youl Yang ,  Yongsun Ko ,  Kyunghyun Kim ,  Taeheon Kim ,  Jae Jin Shin

IPC: H01J37/32

CPC classification number: H01J37/32009 ,  H01J37/32449 ,  H01J37/32899 ,  H01J37/32926 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/334

Abstract: A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.

公开(公告)号：US09627233B2

公开(公告)日：2017-04-18

申请号：US14187556

申请日：2014-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeokHoon Kim ,  Yongmyung Jun ,  Yongsun Ko ,  Kyoungseob Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Jihoon Jeong ,  Yong-Jhin Cho

IPC: B05B1/14 ,  H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/67017 ,  H01L21/67051

Abstract: Provided is a substrate treating apparatus including a housing; a plurality of opening-and-closing members configured to provide a driving force for opening and closing the housing; a fluid storing member supplying a fluid to the opening-and-closing members; and a fluid distribution unit connected to the fluid storing member via a supply conduit to distribute the fluid supplied from the fluid storing member to the opening-and-closing members. The fluid distribution unit includes a distribution conduit diverging from the supply conduit and connected to a corresponding one of the opening-and-closing members; and a fluid distribution member provided at a junction between the supply conduit and the distribution conduit.

公开(公告)号：US09165759B2

公开(公告)日：2015-10-20

申请号：US14086426

申请日：2013-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won Bae ,  Yongsun Ko ,  Byoungho Kwon ,  Bo yun Kim ,  Hongjin Kim ,  Sungoh Park ,  Kuntack Lee ,  Hyosan Lee ,  Sol Han

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/768

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Abstract translation: 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。