公开(公告)号：US09184335B2

公开(公告)日：2015-11-10

申请号：US14153442

申请日：2014-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Wook Hwang ,  Sam Mook Kang ,  Han Kyu Seong

IPC: H01L33/00 ,  H01L33/24

CPC classification number: H01L33/005 ,  H01L33/24

Abstract: There are provided a semiconductor light emitting device and a method of manufacturing the same. A method of manufacturing a plurality of light emitting nanostructures of a semiconductor light emitting device includes: forming a plurality of first conductivity type semiconductor cores on a first type semiconductor seed layer, each first conductivity type semiconductor core formed through an opening in an insulating film; forming an active layer on each first conductivity type semiconductor core; forming, using a mask pattern, a second conductivity type semiconductor layer on each active layer to cover the active layer, to form a plurality of light emitting nanostructures; and forming an electrode on the plurality of light emitting nanostructures.

Abstract translation: 提供了一种半导体发光器件及其制造方法。 一种制造半导体发光器件的多个发光纳米结构的方法，包括：在第一种类的半导体晶种层上形成多个第一导电型半导体芯，每个第一导电型半导体芯通过绝缘膜上的开口形成; 在每个第一导电型半导体芯上形成有源层; 在每个有源层上形成使用掩模图形的第二导电类型半导体层以覆盖有源层，以形成多个发光纳米结构; 以及在所述多个发光纳米结构上形成电极。

公开(公告)号：US10957833B2

公开(公告)日：2021-03-23

申请号：US16356283

申请日：2019-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tan Sakong ,  Yong Il Kim ,  Han Kyu Seong ,  Ji Hye Yeon ,  Chung Sun Lee ,  Ji Hwan Hwang

IPC: H01L33/00 ,  H01L33/62 ,  H01L25/075 ,  H01L27/12 ,  H01L23/00

Abstract: A light emitting diode display device includes a display board comprising a plurality of unit pixels, a drive circuit board including a plurality of drive circuit regions corresponding to the plurality of unit pixels, and a plurality of bumps interposed between the plurality of unit pixels and the plurality of drive circuit regions. The plurality of unit pixels comprises a first unit pixel including a first P electrode. The plurality of drive circuit regions comprises a first drive circuit region corresponding to the first unit pixel and a first pad connected to a first drive transistor, the plurality of bumps includes a first solder in contact with the first pad, and a first bump on the first solder and including a first filler in contact with the first P electrode, the first solder includes at least one of tin and silver, and the first filler includes copper or nickel.

公开(公告)号：US10714667B2

公开(公告)日：2020-07-14

申请号：US16020071

申请日：2018-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye Seok Noh ,  Young Jin Choi ,  Yong Il Kim ,  Han Kyu Seong ,  Dong Gun Lee ,  Jin Sub Lee

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/50 ,  H04N5/225 ,  H01L33/26 ,  H01L33/56 ,  H01L27/15 ,  H01L33/40 ,  H01L25/075

Abstract: A method of manufacturing a light emitting device includes forming light emitting devices on a support portion, each of the light emitting devices including first to third light emitting cells respectively emitting light of different colors; supplying test power to at least a portion of the light emitting devices using a multi-probe; acquiring an image from the light emitted from the portion of the light emitting devices to which the test power is supplied using an image sensor; identifying normal light emitting devices of the portion of the light emitting devices by determining whether a defect is present in each of the light emitting devices of the portion of the light emitting devices by comparing the image acquired by the image sensor with a reference image; and based on the identifying step, measuring optical characteristics of each of the light emitting devices identified as normal of the portion of the light emitting devices.

公开(公告)号：US10686103B2

公开(公告)日：2020-06-16

申请号：US15984959

申请日：2018-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hye Yeon ,  Han Kyu Seong ,  Yong Il Kim ,  Jung Sub Kim

IPC: H01L33/50 ,  F21K9/233 ,  H01L25/075 ,  F21V23/00 ,  F21W131/103 ,  F21Y113/00 ,  F21Y105/10 ,  F21Y115/10 ,  F21Y113/13 ,  H05B45/20

Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.

公开(公告)号：US09780260B2

公开(公告)日：2017-10-03

申请号：US14838430

申请日：2015-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook Hwang ,  Han Kyu Seong ,  Nam Goo Cha

IPC: H01L29/06 ,  H01L31/00 ,  H01L33/24 ,  H01L33/08 ,  H01L33/00

CPC classification number: H01L33/24 ,  H01L33/005 ,  H01L33/08 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.

公开(公告)号：US20170130909A1

公开(公告)日：2017-05-11

申请号：US15181935

申请日：2016-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hye YEON ,  Han Kyu Seong ,  Yong Il Kim ,  Jung Sub Kim

IPC: F21K99/00 ,  H05B33/08 ,  H01L33/50 ,  F21V23/00

CPC classification number: H01L33/50 ,  F21K9/233 ,  F21V23/003 ,  F21W2131/103 ,  F21Y2105/10 ,  F21Y2113/00 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L2224/16225 ,  H05B33/0857

Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.

公开(公告)号：US09379283B2

公开(公告)日：2016-06-28

申请号：US14165112

申请日：2014-01-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo Cha ,  Geon Wook Yoo ,  Han Kyu Seong

IPC: H01L33/20 ,  H01L33/00 ,  H01L33/18 ,  H01L33/24

CPC classification number: H01L33/20 ,  H01L33/005 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24

Abstract: A method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity type semiconductor. A mask including an etch stop layer is formed on the base layer. A plurality of openings are formed in the mask so as to expose regions of. A plurality of nanocores are formed by growing the first conductivity type semiconductor on the exposed regions of the base layer to fill the plurality of openings. The mask is partially removed by using the etch stop layer to expose side portions of the plurality of nanocores. An active layer and a second conductivity type semiconductor layer are sequentially grown on surfaces of the plurality of nanocores.

Abstract translation: 一种制造纳米结构半导体发光器件的方法，包括提供由第一导电型半导体形成的基极层。 在基底层上形成包括蚀刻停止层的掩模。 在掩模中形成多个开口以暴露其中的区域。 通过在基底层的曝光区域上生长第一导电型半导体以填充多个开口来形成多个纳米孔。 通过使用蚀刻停止层来部分地去除掩模以暴露多个纳米孔的侧面部分。 在多个纳米孔的表面上依次生长有源层和第二导电型半导体层。

公开(公告)号：US09269865B2

公开(公告)日：2016-02-23

申请号：US14516470

申请日：2014-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Myung Chun ,  Jung Sub Kim ,  Jin Sub Lee ,  Sam Mook Kang ,  Yeon Woo Seo ,  Han Kyu Seong ,  Young Jin Choi ,  Jae Hyeok Heo

IPC: H01L33/24 ,  H01L33/08 ,  H01L33/62

CPC classification number: H01L33/24 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/145 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.

Abstract translation: 纳米结构半导体发光器件可以包括第一导电型半导体基底层，掩模层，设置在基底层上并具有暴露基底部分的多个开口，多个发光纳米结构设置在多个开口中 以及设置在掩模层上的多晶硅电流抑制层。 多晶硅电流抑制层的至少一部分设置在第二导电型半导体层的下方。 每个发光纳米结构包括第一导电型半导体纳米孔，有源层和第二导电型半导体层。

公开(公告)号：US09142721B2

公开(公告)日：2015-09-22

申请号：US14152465

申请日：2014-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook Hwang ,  Han Kyu Seong ,  Nam Goo Cha

IPC: H01L33/50 ,  H01L33/24 ,  H01L33/08 ,  H01L33/00

CPC classification number: H01L33/24 ,  H01L33/005 ,  H01L33/08 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.

Abstract translation: 一种半导体发光器件，包括：衬底; 由第一导电型半导体制成的基底层，设置在基板上; 多个纳米尺度的发光单元，其设置在所述基底层的上表面的区域中，并且包括从所述基底层的上表面突出的第一导电型纳米半导体层，设置在所述第一导电性的纳米活性层 型纳米半导体层和设置在纳米活性层上的第二导电型纳米半导体层; 以及设置在基层的上表面的不同区域并具有层叠有源层的发光层叠体。