公开(公告)号：US20080173971A1

公开(公告)日：2008-07-24

申请号：US11624682

申请日：2007-01-18

Applicant: Shashank Sharma ,  Theodore I. Kamins

Inventor： Shashank Sharma ,  Theodore I. Kamins

IPC: H01L29/00 ,  H01L21/20

CPC classification number: H01L29/045 ,  A01H5/10 ,  B81C1/00095 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L21/02653 ,  H01L21/28525 ,  H01L21/76838 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of creating isolated electrodes and integrating a nanowire therebetween each employ lateral epitaxial overgrowth of a semiconductor material on a semiconductor layer to form isolated electrodes having the same crystal orientation. The methods include selective epitaxial growth of a semiconductor feature through a window in an insulating film on the semiconductor layer. A vertical stem is in contact with the semiconductor layer through the window and a ledge is a lateral epitaxial overgrowth of the vertical stem on the insulating film. The methods further include creating a pair of isolated electrodes from the semiconductor feature and the semiconductor layer. A nanowire-based device includes the pair of isolated electrodes and a nanowire bridging between respective surfaces of the isolated electrodes of the pair.

Abstract translation: 产生隔离电极并在其间集成纳米线的方法在半导体层上采用半导体材料的横向外延生长以形成具有相同晶体取向的隔离电极。 所述方法包括通过半导体层上的绝缘膜中的窗口选择性地外延生长半导体特征。 垂直杆通过窗口与半导体层接触，并且凸缘是绝缘膜上垂直杆的横向外延过度生长。 所述方法还包括从半导体特征和半导体层形成一对隔离电极。 基于纳米线的器件包括一对隔离电极和在该对的隔离电极的各个表面之间桥接的纳米线。

公开(公告)号：US20080087998A1

公开(公告)日：2008-04-17

申请号：US11548994

申请日：2006-10-12

Applicant: Theodore I. Kamins ,  Shashank Sharma

Inventor： Theodore I. Kamins ,  Shashank Sharma

IPC: H01L23/02 ,  H01L21/00

CPC classification number: H01L23/49827 ,  H01L2224/13017 ,  H01L2224/1308 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A hybrid-scale electronic circuit, an internal electrical connection and a method of electrically interconnecting employ an interconnect having a tapered shape to electrically connect between different-scale circuits. The interconnect has a first end with an end dimension that is larger than an end dimension of an opposite, second end of the interconnect. The larger first end of the interconnect connects to an electrical contact of a micro-scale circuit and the second end of the interconnect connects to an electrical contact of a nano-scale circuit.

Abstract translation: 混合比例电子电路，内部电连接和电互连的方法采用具有锥形形状的互连以在不同尺度的电路之间电连接。 互连具有第一端，端部尺寸大于互连的相对的第二端的端部尺寸。 互连的较大的第一端连接到微尺度电路的电接触，并且互连的第二端连接到纳米级电路的电接触。

公开(公告)号：US20070228583A1

公开(公告)日：2007-10-04

申请号：US11710283

申请日：2007-02-23

Applicant: M. Islam ,  Theodore Kamins ,  Shashank Sharma

Inventor： M. Islam ,  Theodore Kamins ,  Shashank Sharma

IPC: H01L23/48

CPC classification number: G11C13/025 ,  B82Y10/00 ,  B82Y30/00 ,  G11C2213/16 ,  G11C2213/17 ,  H01L21/76838 ,  H01L23/53271 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/721 ,  Y10S977/742 ,  H01L2924/00

Abstract: A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated vertical surface to connect to an opposite vertical surface on the substrate. A method of connecting electrodes of a semiconductor device grows the nanowire from an activated device electrode to an opposing device electrode. A method of bridging semiconductor nanowires grows nanowires between an electrode pair in opposing lateral directions. A method of self-assembling the nanowire bridges the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity in the vertical surface. An electronic device includes a laterally grown nano-scale interconnection.

公开(公告)号：US20070177139A1

公开(公告)日：2007-08-02

申请号：US11341705

申请日：2006-01-27

Applicant: Theodore Kamins ,  Alexandre Bratkovski ,  Shashank Sharma

Inventor： Theodore Kamins ,  Alexandre Bratkovski ,  Shashank Sharma

IPC: G01J3/44 ,  G01N21/65

CPC classification number: G01N21/658 ,  B82Y15/00 ,  B82Y20/00 ,  G02B6/107

Abstract: A NERS-active structure is disclosed that includes at least one heterostructure nanowire. The at least one heterostructure nanowire may include alternating segments of an NERS-inactive material and a NERS-active material in an axial direction. Alternatively, the alternating segments may be of an NERS-inactive material and a material capable of attracting nanoparticles of a NERS-active material. In yet another alternative, the heterostructure nanowire may include a core with alternating coatings of an NERS-inactive material and a NERS-active material in a radial direction. A NERS system is also disclosed that includes a NERS-active structure. Also disclosed are methods for forming a NERS-active structure and methods for performing NERS with NERS-active structures.

Abstract translation: 公开了包含至少一个异质结构纳米线的NERS活性结构。 所述至少一个异质结构纳米线可以包括在轴向上的NERS非活性材料和NERS-活性材料的交替的段。 或者，交替的区段可以是NERS-非活性材料和能够吸引NERS-活性材料的纳米颗粒的材料。 在另一个替代方案中，异质结构纳米线可以包括在径向方向上具有NERS非活性材料和NERS-活性材料的交替涂层的芯。 还公开了包括NERS-活性结构的NERS系统。 还公开了形成NERS-活性结构的方法和用NERS-活性结构进行NERS的方法。

公开(公告)号：US06806228B2

公开(公告)日：2004-10-19

申请号：US09896834

申请日：2001-06-29

Applicant: Shashank Sharma ,  Mahendra Kumar Sunkara

Inventor： Shashank Sharma ,  Mahendra Kumar Sunkara

IPC: B01J2104

CPC classification number: D01F9/08 ,  Y10T428/2918

Abstract: A method of synthesizing semiconductor fibers by placement of gallium or indium metal on a desired substrate, placing the combination in a low pressure chamber at a vacuum from 100 mTorr to one atmosphere pressure in an atmosphere containing desired gaseous reactants, raising the temperature of the metal to a few degrees above its melting point by microwave excitation, whereby the reactants form fibers of the desired length.

Abstract translation: 一种通过将镓或铟金属放置在所需衬底上来合成半导体纤维的方法，将该组合置于低压室中，在真空中从100mTorr至一个大气压在含有所需气态反应物的气氛中，使金属的温度升高 通过微波激发高于其熔点几度，由此反应物形成所需长度的纤维。

公开(公告)号：US07928568B2

公开(公告)日：2011-04-19

申请号：US12476671

申请日：2009-06-02

Applicant: Shashank Sharma ,  Theodore I Kamins

Inventor： Shashank Sharma ,  Theodore I Kamins

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L29/045 ,  A01H5/10 ,  B81C1/00095 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L21/02653 ,  H01L21/28525 ,  H01L21/76838 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A nanowire-based device includes the pair of isolated electrodes and a nanowire bridging between respective surfaces of the isolated electrodes of the pair. Specifically, the nanowire-based device having isolated electrodes comprises: a substrate electrode having a crystal orientation; a ledge electrode that is an epitaxial semiconductor having the crystal orientation of the substrate electrode; and a nanowire bridging between respective surfaces of the substrate electrode and the ledge electrode.

Abstract translation: 基于纳米线的器件包括一对隔离电极和在该对的隔离电极的各个表面之间桥接的纳米线。 具体地说，具有隔离电极的纳米线基器件包括：具有晶体取向的衬底电极; 作为具有基板电极的晶体取向的外延半导体的凸缘电极; 以及在基板电极和凸缘电极的各个表面之间桥接的纳米线。

公开(公告)号：US07659631B2

公开(公告)日：2010-02-09

申请号：US11548994

申请日：2006-10-12

Applicant: Theodore I. Kamins ,  Shashank Sharma

Inventor： Theodore I. Kamins ,  Shashank Sharma

IPC: H01L23/538 ,  H01L21/768

CPC classification number: H01L23/49827 ,  H01L2224/13017 ,  H01L2224/1308 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A hybrid-scale electronic circuit, an internal electrical connection and a method of electrically interconnecting employ an interconnect having a tapered shape to electrically connect between different-scale circuits. The interconnect has a first end with an end dimension that is larger than an end dimension of an opposite, second end of the interconnect. The larger first end of the interconnect connects to an electrical contact of a micro-scale circuit and the second end of the interconnect connects to an electrical contact of a nano-scale circuit.

Abstract translation: 混合比例电子电路，内部电连接和电互连的方法采用具有锥形形状的互连以在不同尺度的电路之间电连接。 互连具有第一端，端部尺寸大于互连的相对的第二端的端部尺寸。 互连的较大的第一端连接到微尺度电路的电接触，并且互连的第二端连接到纳米级电路的电接触。

公开(公告)号：US07307271B2

公开(公告)日：2007-12-11

申请号：US10982051

申请日：2004-11-05

Applicant: M. Saif Islam ,  Philip J. Kuekes ,  Shih-Yuan Wang ,  Duncan R. Stewart ,  Shashank Sharma

Inventor： M. Saif Islam ,  Philip J. Kuekes ,  Shih-Yuan Wang ,  Duncan R. Stewart ,  Shashank Sharma

IPC: H01L29/06 ,  H01L31/036

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01S5/0261 ,  H01S5/041 ,  H01S5/183 ,  H01S5/341 ,  H01S5/3412 ,  H01S5/3428 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764 ,  Y10S977/938

Abstract: A nano-colonnade structure-and methods of fabrication and interconnection thereof utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a semiconductor layer to another horizontal surface of another layer to connect the layers. The nano-colonnade structure includes a first layer having the (111) horizontal surface; a second layer having the other horizontal surface; an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that the horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The structure further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, such that the nanowire column connects the first layer to the second layer.

Abstract translation: 纳米柱廊结构及其制造和互连方法利用从半导体层的（111）水平表面几乎垂直地生长到另一层的另一水平表面的纳米线柱，以连接这些层。 纳米柱廊结构包括具有（111）水平表面的第一层; 具有另一水平表面的第二层; 第一层和第二层之间的绝缘体支撑，其将第一层与第二层分离。 第二层的一部分突出于绝缘体支撑件上，使得伸出部分的水平表面与第一层的（111）水平表面间隔开并面对第一层的（111）水平表面。 该结构还包括从（111）水平表面几乎垂直延伸到相对的水平表面的纳米线列，使得纳米线列将第一层连接到第二层。

公开(公告)号：US07252811B2

公开(公告)日：2007-08-07

申请号：US10187460

申请日：2002-07-01

Applicant: Mahendra Kunmar Sunkara ,  Shashank Sharma

Inventor： Mahendra Kunmar Sunkara ,  Shashank Sharma

IPC: C01B33/20

CPC classification number: D01F9/08 ,  B82Y30/00 ,  B82Y40/00 ,  C04B35/62231 ,  C04B35/62295 ,  C04B2235/386 ,  C04B2235/6581 ,  C04B2235/6582 ,  C04B2235/667 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/786 ,  D01F9/12

Abstract: This invention presents a process to produce bulk quantities of nanowires of a variety of semiconductor materials. Large liquid gallium drops are used as sinks for the gas phase solute, generated in-situ facilitated by microwave plasma. To grow silicon nanowires for example, a silicon substrate covered with gallium droplets is exposed to a microwave plasma containing atomic hydrogen. A range of process parameters such as microwave power, pressure, inlet gas phase composition, were used to synthesize silicon nanowires as small as 4 nm (nanometers) in diameter and several micrometers long. As opposed to the present technology, the instant technique does not require creation of quantum sized liquid metal droplets to synthesize nanowires. In addition, it offers advantages such as lower growth temperature, better control over size and size distribution, better control over the composition and purity of the nanowires.

Abstract translation: 本发明提出了生产大量各种半导体材料的纳米线的方法。 大液滴镓滴用作气相溶质的水槽，由微波等离子体原位产生。 为了生长硅纳米线，例如，用镓液滴覆盖的硅衬底暴露于含有原子氢的微波等离子体。 使用微波功率，压力，入口气相组成等一系列工艺参数来合成直径为4nm（纳米）直径和几微米长的硅纳米线。 与本技术相反，本技术不需要产生量子大小的液态金属液滴来合成纳米线。 此外，它具有诸如较低生长温度，更好地控制尺寸和尺寸分布，更好地控制纳米线的组成和纯度等优点。

公开(公告)号：US07182812B2

公开(公告)日：2007-02-27

申请号：US10664072

申请日：2003-09-16

Applicant: Mahendra Kumar Sunkara ,  Shashank Sharma

Inventor： Mahendra Kumar Sunkara ,  Shashank Sharma

IPC: C30B23/00 ,  C30B25/00

CPC classification number: C30B23/00 ,  C30B25/105 ,  C30B29/16 ,  C30B29/605

Abstract: The bulk synthesis of highly crystalline noncatalytic low melting metals such as β-gallium oxide tubes, nanowires, and nanopaintbrushes is accomplished using molten gallium and microwave plasma containing a mixture of monoatomic oxygen and hydrogen. Gallium oxide nanowires were 20–100 nm thick and tens to hundreds of microns long. Transmission electron microscopy (TEM) revealed the nanowires to be highly crystalline and devoid of any structural defects. Results showed that multiple nucleation and growth of gallium oxide nanostructures can occur directly out of molten gallium exposed to appropriate composition of hydrogen and oxygen in the gas phase. These gallium oxide nanostructures are of particular interest for opto-electronic devices and catalytic applications.

Abstract translation: 使用含有单原子氧和氢的混合物的熔融镓和微波等离子体来实现高结晶非催化低熔点金属如β-氧化镓管，纳米线和纳米线的大量合成。 氧化镓纳米线的厚度为20-100nm，数十至数百微米。 透射电子显微镜（TEM）显示纳米线是高度结晶的，没有任何结构缺陷。 结果表明，氧化镓纳米结构的多次成核和生长可以直接从暴露于气相中氢和氧的合适组成的熔融镓中发生。 这些氧化镓纳米结构对于光电器件和催化应用是特别感兴趣的。