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公开(公告)号：US06172382B2
公开(公告)日：2001-01-09
申请号：US09004925
申请日：1998-01-09
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L33/04 , H01S5/3216 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
摘要翻译： 包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。 在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。 超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。
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公开(公告)号：US5468678A
公开(公告)日：1995-11-21
申请号：US180326
申请日：1994-01-12
申请人： Shuji Nakamura , Naruhito Iwasa , Masayuki Senoh
发明人： Shuji Nakamura , Naruhito Iwasa , Masayuki Senoh
IPC分类号： H01L33/00 , H01L33/32 , H01L21/203
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0087 , Y10S148/003 , Y10S148/004 , Y10S148/064 , Y10S438/902 , Y10S438/909
摘要： A method for manufacturing a III-V Group compound or a II-VI Group compound semiconductor element by VPE, comprising the step of annealing a grown compound at 400.degree. C. or higher, or irradiating electron beam the grown compound at 600.degree. C. or higher.
摘要翻译： 一种通过VPE制造III-V族化合物或II-VI族化合物半导体元件的方法，包括在400℃或更高温度下对生长的化合物进行退火或在600℃照射生长的化合物的步骤。 或更高。
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公开(公告)号：US07211822B2
公开(公告)日：2007-05-01
申请号：US11026062
申请日：2005-01-03
IPC分类号： H01L31/0304
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L2924/0002 , H01S5/3054 , H01S5/3216 , H01S5/32341 , H01S2301/173 , H01L2924/00
摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
摘要翻译： 包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。 在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。 超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。
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公开(公告)号：US06849864B2
公开(公告)日：2005-02-01
申请号：US10601582
申请日：2003-06-24
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L2924/0002 , H01S5/3054 , H01S5/3216 , H01S5/32341 , H01S2301/173 , H01L2924/00
摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
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公开(公告)号：US20170327969A1
公开(公告)日：2017-11-16
申请号：US15607319
申请日：2017-05-26
申请人： Kenji Iso , Hisashi Yamada , Makoto Saito , Asako Hirai , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Kenji Iso , Hisashi Yamada , Makoto Saito , Asako Hirai , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： C30B25/18 , C30B25/02 , C30B29/40 , H01L33/32 , H01L33/16 , H01L29/20 , H01L29/04 , B82Y20/00 , H01L21/02 , H01S5/32 , H01S5/343
CPC分类号： C30B25/18 , B82Y20/00 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L29/2003 , H01L33/16 , H01L33/32 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nonpolar III-nitride film grown on a miscut angle of a substrate. The miscut angle towards the direction is 0.75° or greater miscut and less than 27° miscut towards the direction. Surface undulations are suppressed and may comprise faceted pyramids. A device fabricated using the film is also disclosed. A nonpolar III-nitride film having a smooth surface morphology fabricated using a method comprising selecting a miscut angle of a substrate upon which the nonpolar III-nitride films are grown in order to suppress surface undulations of the nonpolar III-nitride films. A nonpolar III-nitride-based device grown on a film having a smooth surface morphology grown on a miscut angle of a substrate which the nonpolar III-nitride films are grown. The miscut angle may also be selected to achieve long wavelength light emission from the nonpolar film.
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26.发明授权Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other 有权III族氮化物晶体在具有至少两个表面的种子上的等温生长彼此形成锐角，右或钝角公开(公告)号：US09133564B2
公开(公告)日：2015-09-15
申请号：US13283862
申请日：2011-10-28
CPC分类号： C30B7/105 , C30B29/403 , Y10T428/24479
摘要： An ammonothermal growth of group-III nitride crystals on starting seed crystals with at least two surfaces making an acute, right or obtuse angle, i.e., greater than 0 degrees and less than 180 degrees, with respect to each other, such that the exposed surfaces together form a concave surface.
摘要翻译： III族氮化物晶体在具有至少两个表面的起始晶种上相对于彼此形成锐角，右或钝角，即大于0度且小于180度的氨热生长，使得暴露表面 一起形成凹面。
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27.发明授权Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes 有权Al（x）Ga（1-x）不含氮包覆的非极性III族氮化物基激光二极管和发光二极管公开(公告)号：US09040327B2
公开(公告)日：2015-05-26
申请号：US13495231
申请日：2012-06-13
申请人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/00 , H01L29/06 , H01L33/32 , B82Y20/00 , H01L33/16 , H01L33/02 , H01L33/06 , H01S5/32 , H01S5/343
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/16 , H01S5/3211 , H01S5/34333
摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。
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28.发明授权Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD) 有权使用金属有机化学气相沉积（MOCVD）生长非极性M面III族氮化物膜公开(公告)号：US08795440B2
公开(公告)日：2014-08-05
申请号：US13313335
申请日：2011-12-07
CPC分类号： H01L21/02658 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02609 , H01L21/0262
摘要： A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer, such as aluminum nitride (AlN), on the annealed substrate, and growing the non-polar m-plane III-nitride film on the nucleation layer using MOCVD.
摘要翻译： 生长非极性m面III族氮化物膜的方法，例如GaN，AlN，AlGaN或InGaN，其中非极性m面III族氮化物膜在合适的衬底上生长，例如m-SiC ，m-GaN，LiGaO2或LiAlO2基板，使用金属有机化学气相沉积（MOCVD）。 该方法包括进行溶剂清洁和浸渍基底以从表面除去氧化物，退火基底，在退火的基底上生长诸如氮化铝（AlN）的成核层，以及生长非极性m- 使用MOCVD在成核层上的III型氮化物膜。
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公开(公告)号：US08779308B2
公开(公告)日：2014-07-15
申请号：US13367752
申请日：2012-02-07
申请人： Akihiko Takemae , Norio Endo , Shuji Nakamura , Tamotsu Koike , Takeshi Nishino
发明人： Akihiko Takemae , Norio Endo , Shuji Nakamura , Tamotsu Koike , Takeshi Nishino
CPC分类号： H01H3/125 , H01H13/14 , H01H13/36 , H01H13/702 , H01H2203/038 , H01H2227/036
摘要： A key switch device including a key top; a pair of link members connected to the key top and interlocked with each other to guide a vertical motion of the key top; a switch mechanism including a membrane sheet switch capable of opening and closing a contact section of an electrical circuit in accordance with the vertical motion of the key top; a flexible thin film sheet attached to the membrane sheet switch; and a housing attached to the thin film sheet, the housing adapted to connect the link members to the thin film sheet.
摘要翻译： 一种钥匙开关装置，包括键顶; 一对连接构件，连接到键顶并互锁，以引导键顶的垂直运动; 开关机构，其包括根据键顶的垂直运动能够打开和闭合电路的接触部分的膜片开关; 安装在薄片开关上的柔性薄膜片; 以及附接到所述薄膜片的壳体，所述壳体适于将所述连接构件连接到所述薄膜片。
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30.发明授权Method for increasing the area of non-polar and semi-polar nitride substrates 有权增加非极性和半极性氮化物衬底面积的方法公开(公告)号：US08729671B2
公开(公告)日：2014-05-20
申请号：US13327521
申请日：2011-12-15
IPC分类号： H01L29/20
CPC分类号： C30B33/00 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L29/2003
摘要： A method for fabricating a high quality freestanding nonpolar and semipolar nitride substrate with increased surface area, comprising stacking multiple films by growing the films one on top of each other with different and non-orthogonal growth directions.
摘要翻译： 一种用于制造具有增加的表面积的高质量独立非极性和半极性氮化物衬底的方法，包括通过用不同的和非正交的生长方向将膜形成在一个层叠上来堆叠多个膜。
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