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公开(公告)号：US20090033308A1
公开(公告)日：2009-02-05
申请号：US12245360
申请日：2008-10-03
IPC分类号： G05F5/00
摘要： A system may include acquisition of a supply voltage information representing past supply voltages supplied to an electrical component, acquisition of a temperature information representing past temperatures of the electrical component, and control of a performance characteristic of the electrical component based on the supply voltage information and the temperature information. Some embodiments may further include determination of a reliability margin based on the supply voltage information, the temperature information, and on a reliability specification of the electrical component, and change of the performance characteristic based on the reliability margin.
摘要翻译： 系统可以包括获取表示提供给电气部件的过去电源电压的电源电压信息，基于电源电压信息获取表示电气部件的过去温度的温度信息和电气部件的性能特性的控制，以及 温度信息。 一些实施例还可以包括基于电源电压信息，温度信息以及电气部件的可靠性规格以及基于可靠性裕度的性能特性的改变来确定可靠性裕度。
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公开(公告)号：US07282966B2
公开(公告)日：2007-10-16
申请号：US10953199
申请日：2004-09-28
IPC分类号： H03K17/00
CPC分类号： G06F1/324 , G06F1/06 , G06F1/206 , G06F1/3203 , Y02D10/126
摘要： Apparatus and systems, as well as methods and articles, may operate to select a microprocessor clock frequency responsive to a desired voltage and/or a desired temperature of operation.
摘要翻译： 装置和系统以及方法和物品可以操作以响应于期望电压和/或期望的操作温度来选择微处理器时钟频率。
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23.发明授权公开(公告)号：US07075180B2
公开(公告)日：2006-07-11
申请号：US10747805
申请日：2003-12-29
CPC分类号： H01L23/367 , H01L23/50 , H01L24/31 , H01L24/75 , H01L24/81 , H01L24/83 , H01L2224/16225 , H01L2224/73253 , H01L2224/75 , H01L2224/81801 , H01L2224/83801 , H01L2924/01005 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/15174 , H01L2924/15311 , H01L2924/16152
摘要： In some embodiments, a method includes providing an integrated circuit (IC) die in a package. The IC die may have a metal layer on a back surface of the IC die. The method may also include applying a bias signal to the IC die via the metal layer.
摘要翻译： 在一些实施例中，一种方法包括在封装中提供集成电路（IC）裸片。 IC芯片可以在IC芯片的背面上具有金属层。 该方法还可以包括经由金属层向IC管芯施加偏置信号。
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公开(公告)号：US08312306B2
公开(公告)日：2012-11-13
申请号：US12704789
申请日：2010-02-12
摘要： A system may include acquisition of a supply voltage information representing past supply voltages supplied to an electrical component, acquisition of a temperature information representing past temperatures of the electrical component, and control of a performance characteristic of the electrical component based on the supply voltage information and the temperature information. Some embodiments may further include determination of a reliability margin based on the supply voltage information, the temperature information, and on a reliability specification of the electrical component, and change of the performance characteristic based on the reliability margin.
摘要翻译： 系统可以包括获取表示提供给电气部件的过去电源电压的电源电压信息，基于电源电压信息获取表示电气部件的过去温度的温度信息和电气部件的性能特性的控制，以及 温度信息。 一些实施例还可以包括基于电源电压信息，温度信息以及电气部件的可靠性规格以及基于可靠性裕度的性能特性的改变来确定可靠性裕度。
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公开(公告)号：US07689845B2
公开(公告)日：2010-03-30
申请号：US12245360
申请日：2008-10-03
摘要： A system may include acquisition of a supply voltage information representing past supply voltages supplied to an electrical component, acquisition of a temperature information representing past temperatures of the electrical component, and control of a performance characteristic of the electrical component based on the supply voltage information and the temperature information. Some embodiments may further include determination of a reliability margin based on the supply voltage information, the temperature information, and on a reliability specification of the electrical component, and change of the performance characteristic based on the reliability margin.
摘要翻译： 系统可以包括获取表示提供给电气部件的过去电源电压的电源电压信息，基于电源电压信息获取表示电气部件的过去温度的温度信息和电气部件的性能特性的控制，以及 温度信息。 一些实施例还可以包括基于电源电压信息，温度信息以及电气部件的可靠性规格以及基于可靠性裕度的性能特性的改变来确定可靠性裕度。
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公开(公告)号：US06763484B2
公开(公告)日：2004-07-13
申请号：US09894465
申请日：2001-06-28
申请人： James W. Tschanz , Siva G. Narendra , Vivek K. De
发明人： James W. Tschanz , Siva G. Narendra , Vivek K. De
IPC分类号： G01R3128
CPC分类号： G01R31/318575 , H03K2217/0018
摘要： A logic unit and method incorporating body biasing using scan chains, the logic unit comprising a functional unit block including a body and a scan chain, and a variable voltage source coupled to the scan chain to receive control signals from the scan chain and coupled to the body to provide a bias voltage to the body, and the method comprising identifying a preferred body bias voltage for a functional unit block having a body; and permanently programming a plurality of control signals coupled to a variable voltage source that provides the preferred body bias voltage to the body.
摘要翻译： 一种包括使用扫描链的主体偏置的逻辑单元和方法，所述逻辑单元包括包括主体和扫描链的功能单元块，以及耦合到所述扫描链的可变电压源，以从所述扫描链接收控制信号并耦合到所述扫描链 以向身体提供偏置电压，并且该方法包括识别具有身体的功能单元块的优选身体偏置电压; 并且永久地编程耦合到可变电压源的多个控制信号，所述可变电压源向身体提供优选的身体偏置电压。
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公开(公告)号：US06975005B2
公开(公告)日：2005-12-13
申请号：US10689128
申请日：2003-10-20
申请人： Siva G. Narendra , Stephen H. Tang , Zachary Keer , Vivek K. De
发明人： Siva G. Narendra , Stephen H. Tang , Zachary Keer , Vivek K. De
CPC分类号： G05F3/245 , Y10S257/919
摘要： A current reference, which may be fabricated independently, on a die, as part of an integrated circuit, or a system, or in various other forms, is disclosed. The current reference may include a voltage source having a substantially temperature stable output voltage, a first semiconductor device biased by the substantially temperature stable output voltage to provide a first output current, and a second semiconductor device providing a second output current, wherein a reference current is provided approximately equal to the difference between the first and second output currents.
摘要翻译： 公开了可以在芯片上作为集成电路或系统的一部分或以各种其它形式单独制造的电流基准。 电流参考可以包括具有基本上温度稳定的输出电压的电压源，由基本上温度稳定的输出电压偏置以提供第一输出电流的第一半导体器件，以及提供第二输出电流的第二半导体器件，其中参考电流 被提供大致等于第一和第二输出电流之间的差。
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公开(公告)号：US06519176B1
公开(公告)日：2003-02-11
申请号：US09675579
申请日：2000-09-29
申请人： Fatih Hamzaoglu , Ali Keshavarzi , Yibin Ye , Siva G. Narendra , Vivek K. De
发明人： Fatih Hamzaoglu , Ali Keshavarzi , Yibin Ye , Siva G. Narendra , Vivek K. De
IPC分类号： G11C1100
CPC分类号： G11C11/412
摘要： A six transistor SRAM cell for single-ended sensing is described along with related memory architecture. The cell comprises a bistable circuit connected to complementary bit lines through a pair of passgate transistors. One of the passgate transistors has a lower threshold voltage than the other transistor. The lower threshold voltage is used to couple the cell to a single-ended sense amplifier through one of the bit lines. In one embodiment fewer than all the bit lines in an array are precharged in order to reduce power consumption in the array.
摘要翻译： 描述了用于单端感测的六晶体管SRAM单元以及相关的存储器架构。 该单元包括通过一对通道晶体管连接到互补位线的双稳态电路。 一个通道晶体管具有比另一个晶体管更低的阈值电压。 较低的阈值电压用于通过其中一条位线将单元耦合到单端读出放大器。 在一个实施例中，少于阵列中的所有位线被预充电以便减少阵列中的功耗。
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公开(公告)号：US06411156B1
公开(公告)日：2002-06-25
申请号：US09224575
申请日：1998-12-30
IPC分类号： H03K301
CPC分类号： G06F1/3203 , G06F1/324 , G06F1/3296 , H01L27/0928 , H01L29/1087 , H03K19/00384 , H03K19/0948 , H03K2217/0018 , Y02D10/126 , Y02D10/172
摘要： In some embodiments, the invention involves a system including an integrated circuit. The system a circuit including transistors. The system further includes control circuitry to control a setting of a body bias signal to control body biases provided in the circuit to at least partially control a parameter of the integrated circuit, the setting of the body bias signal being responsive to an input signal to the control circuitry. In some embodiments, the invention involves a system including an integrated circuit. The system a circuit including transistors. The system further includes control circuitry to control settings of a body bias signal, a supply voltage signal, and a clock signal to control body biases, supply voltages, and clock frequencies provided in the circuit to at least partially control a parameter of the integrated circuit, the setting of the body bias signal, supply voltage signal, and clock signal being responsive to an input signal to the control circuitry.
摘要翻译： 在一些实施例中，本发明涉及包括集成电路的系统。 该系统包括晶体管的电路。 该系统还包括控制电路，用于控制体偏置信号的设置以控制设置在电路中的身体偏压，以至少部分地控制集成电路的参数，体偏置信号的设置响应于输入信号 控制电路。 在一些实施例中，本发明涉及包括集成电路的系统。 该系统包括晶体管的电路。 该系统还包括控制电路，用于控制体偏置信号，电源电压信号和时钟信号的设置，以控制电路中提供的体偏置，电源电压和时钟频率，以至少部分地控制集成电路的参数 ，所述体偏置信号，电源电压信号和时钟信号的设置响应于控制电路的输入信号。
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30.发明授权公开(公告)号：US06300819B1
公开(公告)日：2001-10-09
申请号：US09078395
申请日：1998-05-13
IPC分类号： G05F110
CPC分类号： H01L27/0928 , H01L29/1087 , H03K19/0948
摘要： One embodiment of the invention includes a semiconductor circuit including a ground voltage node to provide a ground voltage and pFET transistors having an n-type body electrically coupled to the ground voltage node to forward body bias the pFET transistors. Another embodiment of the invention includes a semiconductor circuit including a supply voltage node to provide a supply voltage and nFET transistors having a p-type body electrically coupled to the supply voltage node to forward body bias the nFET transistors. Still another embodiment of the invention includes a semiconductor circuit including a ground voltage node to provide a ground voltage and pFET transistors having an n-type body electrically coupled to the ground voltage node to forward body bias the pFET transistors. The circuit also includes a supply voltage node to provide a supply voltage and nFET transistors having a p-type body electrically coupled to the supply voltage node to forward body bias the nFET transistors.
摘要翻译： 本发明的一个实施例包括一个半导体电路，该半导体电路包括提供接地电压的接地电压节点和具有电耦合到接地电压节点的n型体的pFET晶体管，以使pFET晶体管的偏置正向。 本发明的另一个实施例包括一个半导体电路，其包括提供电源电压的电源电压节点和具有电耦合到电源电压节点的p型体的nFET晶体管，以使nFET晶体管的本体偏置转向。 本发明的另一个实施例包括一个包括接地电压节点以提供接地电压的半导体电路，以及具有电耦合到接地电压节点的n型体的pFET晶体管，以使pFET晶体管的偏置正向。 该电路还包括用于提供电源电压的电源电压节点和具有电耦合到电源电压节点的p型主体的nFET晶体管，以使nFET晶体管的主体偏置转向。
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