公开(公告)号：US08895846B2

公开(公告)日：2014-11-25

申请号：US12940876

申请日：2010-11-05

申请人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

发明人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC分类号： H01L31/00 ,  H01L31/0735 ,  H01L31/0236 ,  H01L31/0304

CPC分类号： H01L31/0304 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03046 ,  H01L31/065 ,  H01L31/0682 ,  H01L31/0693 ,  H01L31/0735 ,  Y02E10/50 ,  Y02E10/52 ,  Y02E10/544

摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

公开(公告)号：US08846417B2

公开(公告)日：2014-09-30

申请号：US13222310

申请日：2011-08-31

申请人： Andreas Hegedus

发明人： Andreas Hegedus

IPC分类号： H01L21/66 ,  H01L31/02 ,  H01L31/18

CPC分类号： H01L31/022433 ,  H01L22/22 ,  H01L31/0201 ,  H01L31/02013 ,  H01L31/02021 ,  H01L31/188 ,  Y02E10/50

摘要： An optoelectronic device including at least one of a solar device, a semiconductor device, and an electronic device. The device includes a semiconductor unit. A plurality of metal fingers is disposed on a surface of the semiconductor unit for electrical conduction. Each of the metal fingers includes a pad area for forming an electrical contact. The optoelectronic device includes a plurality of pad areas that is available for connection to a bus bar, wherein each of the metal fingers is connected to a corresponding pad area for forming an electrical contact.

摘要翻译： 一种包括太阳能装置，半导体装置和电子装置中的至少一个的光电装置。 该装置包括半导体单元。 多个金属指状物设置在半导体单元的表面上用于导电。 每个金属指包括用于形成电接触的焊盘区域。 光电子器件包括可用于连接到母线的多个焊盘区域，其中每个金属指连接到相应的焊盘区域以形成电接触。

公开(公告)号：US08314011B2

公开(公告)日：2012-11-20

申请号：US12475418

申请日：2009-05-29

申请人： Thomas Gmitter ,  Gang He ,  Andreas Hegedus

发明人： Thomas Gmitter ,  Gang He ,  Andreas Hegedus

IPC分类号： H01L21/46

CPC分类号： H01L21/7813 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/30612 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L2221/6835 ,  H01L2221/68381

摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming a thin film material during an epitaxial lift off process is provided which includes forming an epitaxial material over a sacrificial layer on a substrate, adhering a non-uniform support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process further includes peeling the epitaxial material from the substrate while forming an etch crevice therebetween and bending the support handle to form compression in the epitaxial material during the etching process. In one example, the non-uniform support handle contains a wax film having a varying thickness.

摘要翻译： 本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和装置的装置和方法。 在一个实施例中，提供了在外延剥离工艺期间形成薄膜材料的方法，其包括在衬底上的牺牲层上形成外延材料，将不均匀的支撑手柄附着在外延材料上，以及去除牺牲 在蚀刻过程中。 蚀刻工艺还包括从衬底剥离外延材料，同时在其间形成蚀刻缝隙，并在蚀刻工艺期间弯曲支撑柄以在外延材料中形成压缩。 在一个实例中，不均匀的支撑手柄包含具有变化厚度的蜡膜。

公开(公告)号：US20100229793A1

公开(公告)日：2010-09-16

申请号：US12725326

申请日：2010-03-16

申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

IPC分类号： C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

摘要： Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a showerhead assembly is provided which includes a body having a centralized channel extending through upper and lower portions of the body and extending parallel to a central axis of the body. The showerhead assembly contains an optional diffusion plate having a first plurality of holes and disposed within the centralized channel, an upper tube plate having a second plurality of holes and disposed within the centralized channel below the diffusion plate, a lower tube plate having a third plurality of holes and disposed within the centralized channel below the upper tube plate, and a plurality of tubes extending from the upper tube plate to the lower tube plate. Each tube is coupled to and in fluid communication with individual holes of the upper and lower tube plates.

摘要翻译： 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了一种喷头组件，其包括具有延伸穿过主体的上部和下部并且平行于主体的中心轴线延伸的集中通道的主体。 淋浴头组件包括具有第一多个孔并且设置在集中通道内的可选扩散板，具有第二多个孔并且设置在扩散板下方的集中通道内的上管板，具有第三多个的下管板 并且设置在上管板下方的集中通道内，以及从上管板延伸到下管板的多个管。 每个管连接到上管和下管板的各个孔中并与其流体连通。

公开(公告)号：US20100209082A1

公开(公告)日：2010-08-19

申请号：US12725314

申请日：2010-03-16

申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

IPC分类号： C23C16/00 ,  F27B5/14

CPC分类号： C30B25/10 ,  C23C16/01 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/482 ,  C23C16/54 ,  C30B25/025 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67115 ,  H01L21/67784 ,  H05B3/0047

摘要： Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a heating lamp assembly for a vapor deposition reactor system is provided which includes a lamp housing disposed on an upper surface of a support base and containing a first lamp holder and a second lamp holder and a plurality of lamps extending from the first lamp holder to the second lamp holder. The plurality of lamps may have split filament lamps and/or non-split filament lamps, and in some examples, split and non-split filament may be alternately disposed between the first and second lamp holders. A reflector may be disposed on the upper surface of the support base between the first and second lamp holders. The reflector may contain gold or a gold alloy.

摘要翻译： 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了一种用于气相沉积反应器系统的加热灯组件，其包括设置在支撑基座的上表面上并包含第一灯座和第二灯座的灯壳，以及从第一 灯架到第二个灯座。 多个灯可以具有裂开的灯丝灯和/或非分裂灯丝灯，并且在一些示例中，分裂和非分裂灯丝可以​​交替地设置在第一和第二灯座之间。 反射器可以设置在第一和第二灯座之间的支撑基座的上表面上。 反射器可以包含金或金合金。

公开(公告)号：US20100151689A1

公开(公告)日：2010-06-17

申请号：US12640796

申请日：2009-12-17

申请人： Thomas Gmitter ,  Gang He ,  Melissa Archer ,  Andreas Hegedus

发明人： Thomas Gmitter ,  Gang He ,  Melissa Archer ,  Andreas Hegedus

IPC分类号： H01L21/306 ,  C23F1/08

CPC分类号： H01L21/7813 ,  H01L21/30612 ,  H01L21/67086 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L31/184 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2221/6839

摘要： Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown.

摘要翻译： 本发明的实施例一般涉及通过外延剥离（ELO）工艺制造外延薄膜和器件的装置和方法。 在一个实施例中，提供了一种在ELO工艺期间形成薄膜器件的方法，其包括将多个衬底耦合到细长支撑带，其中每个衬底包含设置在设置在晶片上方的牺牲层上的外延膜， 在移动细长的支撑带的同时蚀刻过程中的蚀刻剂，以及蚀刻牺牲层并在移动细长支撑带的同时从晶片剥离外延膜。 实施例还包括几种用于形成外延薄膜和器件的连续型和间歇式器件的装置，包括用于从其上生长外延膜的晶片去除支撑带和外延膜的装置。

公开(公告)号：US20100126571A1

公开(公告)日：2010-05-27

申请号：US12605140

申请日：2009-10-23

申请人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

发明人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC分类号： H01L31/00

CPC分类号： H01L31/0735 ,  H01L31/02168 ,  Y02E10/544

摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) device may incorporate front side and/or back side light trapping techniques in an effort to absorb as many of the photons incident on the front side of the PV device as possible in the absorber layer. The light trapping techniques may include a front side antireflective coating, multiple window layers, roughening or texturing on the front and/or the back sides, a back side diffuser for scattering the light, and/or a back side reflector for redirecting the light into the interior of the PV device. With such light trapping techniques, more light may be absorbed by the absorber layer for a given amount of incident light, thereby increasing the efficiency of the PV device.

摘要翻译： 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 光伏（PV）装置可以包括前侧和/或后侧光捕获技术，以尽量吸收在吸收层中尽可能多地入射到PV装置的前侧的光子。 光捕获技术可以包括前侧防反射涂层，多个窗口层，在前侧和/或后侧上的粗糙化或纹理化，用于散射光的后侧扩散器和/或用于将光重定向到的后侧反射器 PV设备的内部。 通过这种光捕获技术，对于给定量的入射光，更多的光可以被吸收层吸收，从而提高PV器件的效率。

公开(公告)号：US20060289504A1

公开(公告)日：2006-12-28

申请号：US11151879

申请日：2005-06-13

申请人： Andreas Hegedus

发明人： Andreas Hegedus

IPC分类号： H05B6/50

CPC分类号： H01L21/67115

摘要： A thermal processing system and method including scanning a line beam of intense radiation in a direction transverse to the line direction for thermally processing a wafer with a localized effectively pulsed beam of radiant energy. The thickness of the wafer is two-dimensionally mapped and the map is used to control the degree of thermal processing, for example, the intensity of radiation in the line beam to increase the uniformity. The processing may include selective etching of a pre-existing layer or depositing more material by chemical vapor deposition.

摘要翻译： 一种热处理系统和方法，包括在横向于线方向的方向上扫描强辐射的线束，以用局部有效脉冲的辐射能量束热处理晶片。 将晶片的厚度二维地映射，并且使用该图来控制热处理的程度，例如，线束中的辐射强度以增加均匀性。 该处理可以包括选择性蚀刻预先存在的层或通过化学气相沉积沉积更多的材料。

公开(公告)号：US20060029747A1

公开(公告)日：2006-02-09

申请号：US10914964

申请日：2004-08-09

申请人： James Cruse ,  Andreas Hegedus ,  Satheesh Kuppurao

发明人： James Cruse ,  Andreas Hegedus ,  Satheesh Kuppurao

IPC分类号： H05H1/24 ,  B05C11/00 ,  C23C16/00

CPC分类号： C23C16/455 ,  C23C8/10 ,  C23C8/36 ,  C23C16/24 ,  C23C16/45557 ,  C30B25/14 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28525 ,  H01L21/3115 ,  H01L21/3144

摘要： The amount of atoms diffused into a substrate may be made uniform or the thickness of a thin film may be made uniform in a low species utilization process by stopping the flow of gas into a reaction chamber during the low species utilization process. Stopping the flow of gas into a reaction chamber may entail closing the gate valve (the valve to the vacuum pump), stabilizing the pressure within the reaction chamber, and maintaining the stabilized pressure while stopping the gas flowing into the chamber. Low species utilization processes include the diffusion of nitrogen into silicon dioxide gate dielectric layers by decoupled plasma nitridation (DPN), the deposition of a silicon dioxide film by rapid thermal processing (RTP) or chemical vapor deposition (CVD), and the deposition of silicon epitaxial layers by CVD.

摘要翻译： 扩散到基板中的原子的量可以在低物质利用过程中通过在低物质利用过程中停止气体流入反应室而在低物质利用过程中使薄膜的厚度均匀。 停止进入反应室的气体流可能需要关闭闸阀（真空泵的阀），稳定反应室内的压力，并在停止流入室内的气体的同时保持稳定的压力。 低物种利用过程包括通过解耦等离子体氮化（DPN）将氮扩散到二氧化硅栅极电介质层中，通过快速热处理（RTP）或化学气相沉积（CVD）沉积二氧化硅膜，以及沉积硅 外延层通过CVD。

公开(公告)号：US09175393B1

公开(公告)日：2015-11-03

申请号：US13222890

申请日：2011-08-31

申请人： Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington ,  Andreas Hegedus

发明人： Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington ,  Andreas Hegedus

IPC分类号： C23C16/50 ,  H01L21/306 ,  C23F1/00 ,  C23C16/455 ,  C23C16/458

CPC分类号： H01J37/32834 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67115 ,  H01L21/6776

摘要： A showerhead for a semiconductor-processing reactor formed by an array of showerhead tiles. Each showerhead tile has a plurality of process gas apertures, which may be in a central area of the tile or may extend over the entire tile. Each showerhead tile can be dimensioned for processing a respective substrate or the array can be dimensioned for processing a substrate. An exhaust region surrounds the process gas apertures. The exhaust region has at least one exhaust aperture, and may include an exhaust slot, a plurality of connected exhaust slots or a plurality of exhaust apertures. The exhaust region surrounds the array of showerhead tiles, or a respective portion of the exhaust region surrounds the plurality of process gas apertures in each showerhead tile or group of showerhead tiles. A gas curtain aperture may be between the exhaust region and the process gas apertures of one of the showerhead tiles or adjacent to the central area of the tile.

摘要翻译： 一种用于由喷头瓦片阵列形成的半导体处理反应器的喷头。 每个喷头瓦具有多个处理气体孔口，其可以在瓦片的中心区域中，或者可以在整个瓦片上延伸。 每个喷头砖的尺寸可以被设计用于处理相应的基板，或者该阵列的尺寸可以用于处理基板。 排气区围绕工艺气体孔。 排气区域具有至少一个排气孔，并且可以包括排气槽，多个连接的排气槽或多个排气孔。 排气区域围绕阵列的喷头瓦片，或者排气区域的相应部分围绕每个喷头瓦片或一组喷头瓦片中的多个处理气体孔。 气幕孔可以在排气区域和淋浴喷头瓦片之一的邻近瓦片的中心区域的处理气体孔之间。