公开(公告)号：US20060002170A1

公开(公告)日：2006-01-05

申请号：US10931193

申请日：2004-09-01

申请人： Yoshinori Kumura ,  Yoshiro Shimojo ,  Iwao Kunishima ,  Tohru Ozaki

发明人： Yoshinori Kumura ,  Yoshiro Shimojo ,  Iwao Kunishima ,  Tohru Ozaki

IPC分类号： G11C11/22

CPC分类号： G11C11/22 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor storage device wherein a plurality of ferroelectric capacitors are sufficiently covered with a hydrogen barrier film formed thereon comprises a field effect transistor formed on one surface side of a semiconductor substrate, a plurality of ferroelectric capacitors formed close to each other above the field effect transistor, an insulting film configured to cover the plurality of ferroelectric capacitors and planarised a space between adjacent ferroelectric capacitors in a self-aligned manner during formation thereof, and a hydrogen barrier film formed on the insulating film.

公开(公告)号：US06982453B2

公开(公告)日：2006-01-03

申请号：US10602764

申请日：2003-06-25

申请人： Hiroyuki Kanaya ,  Toyota Morimoto ,  Osamu Hidaka ,  Yoshinori Kumura ,  Iwao Kunishima ,  Tsuyoshi Iwamoto

发明人： Hiroyuki Kanaya ,  Toyota Morimoto ,  Osamu Hidaka ,  Yoshinori Kumura ,  Iwao Kunishima ,  Tsuyoshi Iwamoto

IPC分类号： H01L27/11 ,  G01C11/22

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A semiconductor device having a semiconductor substrate; an insulating film formed on said semiconductor substrate; a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode which are stacked sequentially on the insulating film; a first hydrogen barrier film; a first inter-layer insulating film covering said ferroelectric capacitor; and a second inter-layer insulating film stacked on the first inter-layer insulating film, the first hydrogen barrier film being interposed between the first and second interlayer insulating films is proposed.

摘要翻译： 一种具有半导体衬底的半导体器件; 形成在所述半导体衬底上的绝缘膜; 具有下电极，强电介质膜和上电极的铁电电容器，其顺序层叠在绝缘膜上; 第一氢阻挡膜; 覆盖所述铁电电容器的第一层间绝缘膜; 以及叠层在第一层间绝缘膜上的第二层间绝缘膜，提出介于第一和第二层间绝缘膜之间的第一氢阻挡膜。

公开(公告)号：US20050167716A1

公开(公告)日：2005-08-04

申请号：US10805208

申请日：2004-03-22

申请人： Yoshinori Kumura ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Iwao Kunishima

IPC分类号： H01L27/10 ,  H01L21/02 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/11502 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/65

摘要： A ferro-electric memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate, and a first ferro-electric capacitor electrically connected to the first transistor and formed of a first capacitor material layer having a first lower electrode, a first ferro- electric film, and a first upper electrode, the first ferro-electric capacitor being thicker at its central portion than at its ends.

摘要翻译： 铁电存储器件包括半导体衬底，形成在半导体衬底上的第一晶体管和与第一晶体管电连接并由第一电容器材料层形成的第一铁电电容器，第一电容器材料层具有第一下电极，第一铁 - 电膜和第一上电极，所述第一铁电电容器在其中心部分比在其端部处更厚。

公开(公告)号：US06611014B1

公开(公告)日：2003-08-26

申请号：US09570026

申请日：2000-05-12

申请人： Hiroyuki Kanaya ,  Toyota Morimoto ,  Osamu Hidaka ,  Yoshinori Kumura ,  Iwao Kunishima ,  Tsuyoshi Iwamoto

发明人： Hiroyuki Kanaya ,  Toyota Morimoto ,  Osamu Hidaka ,  Yoshinori Kumura ,  Iwao Kunishima ,  Tsuyoshi Iwamoto

IPC分类号： H01L2966

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A semiconductor device having a semiconductor substrate; an insulating film formed on said semiconductor substrate; a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode which are stacked sequentially on the insulating film; a first hydrogen barrier film; a first inter-layer insulating film covering said ferroelectric capacitor; and a second inter-layer insulating film stacked on the first inter-layer insulating film, the first hydrogen barrier film being interposed between the first and second interlayer insulating films is proposed.

摘要翻译： 一种具有半导体衬底的半导体器件; 形成在所述半导体衬底上的绝缘膜; 具有下电极，强电介质膜和上电极的铁电电容器，其顺序层叠在绝缘膜上; 第一氢阻挡膜; 覆盖所述铁电电容器的第一层间绝缘膜; 以及叠层在第一层间绝缘膜上的第二层间绝缘膜，提出介于第一和第二层间绝缘膜之间的第一氢阻挡膜。

公开(公告)号：US6121649A

公开(公告)日：2000-09-19

申请号：US353639

申请日：1999-07-15

申请人： Iwao Kunishima

发明人： Iwao Kunishima

IPC分类号： H01L21/8247 ,  H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L29/92 ,  H01L29/80

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/40 ,  H01L28/55

摘要： A non-volatile memory has transistors and capacitors formed on a semiconductor substrate. The capacitors have a lower electrode, a ferroelectric film and an upper electrode stacked in order. An insulating film with at least one contact hole is formed on the substrate to cover the gate of each transistor. A side-wall insulating film is also formed to cover the side faces of the lower electrode and the ferroelectric film. A contact electrically connects the upper electrode and the source or drain of each transistor. The side-wall insulating film electrically isolates the contact from the lower electrode. The contact is made of a material at least the portion connected to the upper electrode and the other portion adjacent to that portion. The upper electrode is also made of that material. The upper electrode and the portion of the contact connected to the upper electrode are thus joined each other.

摘要翻译： 非易失性存储器具有形成在半导体衬底上的晶体管和电容器。 电容器具有依次堆叠的下电极，铁电体膜和上电极。 在衬底上形成具有至少一个接触孔的绝缘膜，以覆盖每个晶体管的栅极。 还形成侧壁绝缘膜以覆盖下电极和铁电体膜的侧面。 触点电连接每个晶体管的上电极和源极或漏极。 侧壁绝缘膜将触点与下电极电隔离。 触点由至少连接到上电极的部分和与该部分相邻的另一部分的材料制成。 上电极也由该材料制成。 因此，上电极和连接到上电极的部分接触。

公开(公告)号：US5721175A

公开(公告)日：1998-02-24

申请号：US159953

申请日：1993-12-01

申请人： Iwao Kunishima ,  Kyoichi Suguro

发明人： Iwao Kunishima ,  Kyoichi Suguro

IPC分类号： H01L21/225 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/45 ,  H01L29/78 ,  H01L21/223

CPC分类号： H01L29/66575 ,  H01L21/28518 ,  H01L29/456 ,  Y10S148/019 ,  Y10S148/147

摘要： According to this invention, a method of manufacturing a semiconductor device includes the steps of forming an impurity diffusion layer of a second conductivity type on a semiconductor substrate of a first conductivity type, forming a transition metal compound layer containing a constituent element of the semiconductor substrate on the impurity diffusion layer, and doping an impurity of the second conductivity type in the metal compound layer by annealing in a reducing atmosphere. A semiconductor device includes a semiconductor substrate of a first conductivity type, an impurity diffusion layer of a second conductivity type formed in the semiconductor substrate of the first conductivity type, and a conductive metal compound layer formed on the impurity diffusion layer, wherein the conductive metal compound layer consists of at least a transition metal, a semiconductor element, and an impurity element of the second conductivity type which is an impurity element of the second conductivity type, and the impurity element of the second conductivity in the conductive metal compound layer is uniformly distributed.

摘要翻译： 根据本发明，制造半导体器件的方法包括以下步骤：在第一导电类型的半导体衬底上形成第二导电类型的杂质扩散层，形成含有半导体衬底的构成元素的过渡金属化合物层 在杂质扩散层上，通过在还原气氛中退火，在金属化合物层中掺杂第二导电类型的杂质。 半导体器件包括形成在第一导电类型的半导体衬底中的第一导电类型的半导体衬底，第二导电类型的杂质扩散层和形成在杂质扩散层上的导电金属化合物层，其中导电金属 复合层由至少一种过渡金属，半导体元件和作为第二导电类型的杂质元素的第二导电类型的杂质元素组成，并且导电金属化合物层中的第二导电性的杂质元素均匀 分散式。

公开(公告)号：US5168332A

公开(公告)日：1992-12-01

申请号：US617793

申请日：1990-11-26

申请人： Iwao Kunishima ,  Tomonori Aoyama ,  Kyoichi Suguro

发明人： Iwao Kunishima ,  Tomonori Aoyama ,  Kyoichi Suguro

IPC分类号： H01L29/78 ,  H01L21/225 ,  H01L21/28 ,  H01L21/331 ,  H01L21/336 ,  H01L29/41 ,  H01L29/43 ,  H01L29/45 ,  H01L29/49

CPC分类号： H01L29/66272 ,  H01L21/2257 ,  H01L29/41 ,  H01L29/45 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66575 ,  Y10S148/019 ,  Y10S257/90

摘要： A semiconductor device including a semiconductor substrate of a first conductivity type. An insulative film and metal films are sequentially formed on the main top surface of the semiconductor substrate. Impurity diffusion layers of a second conductivity type are selectively formed on the main top surface of the semiconductor substrate. The semiconductor device further includes metal compound layers consisting of constituting elements of the semiconductor substrate and a metal element. The metal compound layers are formed in the impurity diffusion layers in such a manner that they do not contact the insulative film, and the metal compound layers on the main back surface side of the semiconductor substrate have faces formed in parallel to the top surface of the semiconductor substrate.

公开(公告)号：US07339218B2

公开(公告)日：2008-03-04

申请号：US10885749

申请日：2004-07-08

申请人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

发明人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

公开(公告)号：US07214982B2

公开(公告)日：2007-05-08

申请号：US10959223

申请日：2004-10-07

申请人： Yoshinori Kumura ,  Iwao Kunishima ,  Tohru Ozaki

发明人： Yoshinori Kumura ,  Iwao Kunishima ,  Tohru Ozaki

IPC分类号： H01L27/108

CPC分类号： H01L29/945 ,  H01L27/11502 ,  H01L27/11507 ,  H01L29/66181

摘要： A semiconductor device including a ferroelectric random access memory, which has a structure suitable for miniaturization and easy to manufacture, and having less restrictions on materials to be used, comprises a field effect transistor formed on a surface area of a semiconductor wafer, a trench ferroelectric capacitor formed in the semiconductor wafer in one source/drain of the field effect transistor, wherein one electrode thereof is connected to the source/drain, and a wiring formed in the semiconductor wafer and connected to the other electrode of the trench ferroelectric capacitor.

摘要翻译： 包括具有适于小型化并易于制造并且对材料使用限制较少的结构的铁电随机存取存储器的半导体器件包括形成在半导体晶片的表面区域上的场效应晶体管，沟槽铁电体 电容器形成在场效应晶体管的一个源极/漏极中的半导体晶片中，其中一个电极连接到源极/漏极，以及形成在半导体晶片中并连接到沟槽铁电电容器的另一个电极的布线。

公开(公告)号：US20070045687A1

公开(公告)日：2007-03-01

申请号：US11288204

申请日：2005-11-29

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

IPC分类号： H01L29/94 ,  H01L29/76 ,  H01L31/00

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising a transistor formed on a semiconductor substrate, a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and an upper electrode, a first hydrogen barrier film formed over the ferroelectric capacitor, an insulator formed over the first hydrogen barrier film, a contact plug disposed in the insulator and electrically connected with the upper electrode, a second hydrogen barrier film disposed between the contact plug and the insulator continuously, and a wiring connected with the contact plug.

摘要翻译： 公开了一种包括具有改善的可靠性的铁电电容器的半导体器件。 根据本发明的一个方面，提供了一种半导体器件，包括形成在半导体衬底上的晶体管，形成在晶体管上方的铁电电容器，包括下电极，铁电体膜和上电极，第一氢阻挡膜 形成在所述铁电电容器上，形成在所述第一氢阻挡膜上的绝缘体，设置在所述绝缘体中并与所述上电极电连接的接触插塞，连续地配置在所述接触插塞和所述绝缘体之间的第二氢阻挡膜， 与接触插头。