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248 条记录 (耗时 0.053 秒)

    Method for producing molecule immobilizing substrate, and molecule immobilizing substrate
    21.
    发明授权
    Method for producing molecule immobilizing substrate, and molecule immobilizing substrate 有权
    制备分子固定底物的方法和分子固定底物

    公开(公告)号：US09034661B2

    公开(公告)日：2015-05-19

    申请号：US12709020

    申请日：2010-02-19

    申请人： Wataru Kusaki ,  Toshinobu Ishihara ,  Takeshi Kinsho ,  Takeru Watanabe

    发明人： Wataru Kusaki ,  Toshinobu Ishihara ,  Takeshi Kinsho ,  Takeru Watanabe

    IPC分类号： G01N33/544 ,  G01N33/543 ,  G01N33/53 ,  C08L83/04 ,  C08L83/06

    CPC分类号： G01N33/54393 ,  C08L83/04 ,  C08L83/06 ,  G01N33/543 ,  G01N33/54353

    摘要： There is disclosed a method for producing a molecule immobilizing substrate, comprising at least the steps of: forming, on a substrate, a monomolecular film including hydroxyl groups, cyano groups, or oxiranyl groups, which are oriented toward an outmost surface of the monomolecular film; and chemically modifying the hydroxyl groups, cyano groups, or oxiranyl groups of the monomolecular film to transform them into carboxyl groups, to thereby form, on the substrate, the monomolecular film including the carboxyl groups, which are oriented toward an outmost surface of the monomolecular film. There can be provided: a method for producing a molecule immobilizing substrate which is free of occurrence of an immobilized-molecule peeling problem in the case of conducting an assay by immobilizing molecules on the substrate.

    摘要翻译： 公开了一种分子固定基板的制造方法，至少包括以下步骤：在基板上形成包含羟基，氰基或环氧乙烷基的单分子膜，该单分子膜朝向单分子膜的最外表面 ; 并对单分子膜的羟基，氰基或环氧乙烷基进行化学改性，将其转化为羧基，从而在基材上形成包含羧基的单分子膜，该单分子膜朝向单分子膜的最外表面 电影。 可以提供：在通过将分子固定在基材上进行测定的情况下，制备不存在固定化分子剥离问题的分子固定化基质的方法。

    Resist composition and patterning process
    24.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US08592133B2

    公开(公告)日：2013-11-26

    申请号：US13427621

    申请日：2012-03-22

    申请人： Satoshi Watanabe ,  Akinobu Tanaka ,  Takeru Watanabe ,  Takeshi Kinsho

    发明人： Satoshi Watanabe ,  Akinobu Tanaka ,  Takeru Watanabe ,  Takeshi Kinsho

    IPC分类号： G03F7/00 ,  G03F7/20 ,  G03F7/028 ,  G03F7/40 ,  G03F1/08

    CPC分类号： G03F7/0045 ,  G03F7/0382 ,  Y10S430/114 ,  Y10S430/128

    摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

    摘要翻译： 本发明涉及：抗蚀剂组合物，例如化学放大抗蚀剂组合物，除了在微制造的光刻中具有更高分辨率之外，甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形，特别是在光刻 采用KrF激光，ArF激光，F2激光，超短紫外光，电子束，X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。 本发明提供一种化学放大抗蚀剂组合物，其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物（除了具有包含在芳环的环结构中的胺或氧化胺的氮原子的那些） 并且不具有与氮原子共价键合的氢原子作为碱性中心。

    Chemically-amplified positive resist composition and patterning process thereof
    26.
    发明授权
    Chemically-amplified positive resist composition and patterning process thereof 有权
    化学扩增的正型抗蚀剂组合物及其构图工艺

    公开(公告)号：US08202677B2

    公开(公告)日：2012-06-19

    申请号：US12457327

    申请日：2009-06-08

    申请人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

    发明人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

    IPC分类号： G03F7/00 ,  G03F7/04 ,  G03F7/028 ,  G03F7/40

    CPC分类号： G03F7/0395 ,  G03F7/0045 ,  G03F7/0392 ,  Y10S430/114

    摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.

    摘要翻译： 公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱 （B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。 在通过光刻胶的光刻技术中，需要非常高的时间稳定性。 另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。 可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。

    Positive resist compositions and patterning process
    28.
    发明授权
    Positive resist compositions and patterning process 有权
    正极抗蚀剂组成和图案化工艺

    公开(公告)号：US08021822B2

    公开(公告)日：2011-09-20

    申请号：US12355072

    申请日：2009-01-16

    申请人： Youichi Ohsawa ,  Takeshi Kinsho ,  Takeru Watanabe

    发明人： Youichi Ohsawa ,  Takeshi Kinsho ,  Takeru Watanabe

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/2041 ,  Y10S430/111 ,  Y10S430/122

    摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a satisfactory mask fidelity and a minimal LER. Herein R1 is H or methyl, m is 1 or 2, and n is 1 or 2.

    摘要翻译： 正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂（A）是包含由式（1）表示的特定重复单元的聚合物。 酸产生剂（B）是特定的锍盐化合物。 当通过光刻处理时，组合物的分辨率提高，并形成具有令人满意的掩模保真度和最小LER的图案。 其中R1为H或甲基，m为1或2，n为1或2。

    Lactone-containing compound, polymer, resist composition, and patterning process
    29.
    发明授权
    Lactone-containing compound, polymer, resist composition, and patterning process 有权
    含内酯的化合物，聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US07871752B2

    公开(公告)日：2011-01-18

    申请号：US11878759

    申请日：2007-07-26

    申请人： Koji Hasegawa ,  Tsunehiro Nishi ,  Takeshi Kinsho ,  Seiichiro Tachibana

    发明人： Koji Hasegawa ,  Tsunehiro Nishi ,  Takeshi Kinsho ,  Seiichiro Tachibana

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  G03F7/0046 ,  Y10S430/111

    摘要： Lactone-containing compounds having formula (1) are novel wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are monovalent hydrocarbon groups, or R2 and R3 may together form an aliphatic hydrocarbon ring, R4 is H or CO2R5, R5 is a monovalent hydrocarbon group, W is CH2, O or S, and k1 is 0 or 1. They are useful as monomers to produce polymers which are transparent to radiation≦500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, pattern edge roughness, pattern density dependency and exposure margin.

    摘要翻译： 具有式（1）的含内酯的化合物是新的，其中R 1是H，F，甲基或三氟甲基，R 2和R 3是一价烃基，或者R 2和R 3可以一起形成脂族烃环，R 4是H或CO 2 R 5，R 5是 一价烃基，W是CH 2，O或S，k 1是0或1.它们可用作产生对辐射透明的聚合物的单体; 500nm。 包含作为基础树脂的聚合物的辐射敏感性抗蚀剂组合物表现出优异的性能，包括分辨率，图案边缘粗糙度，图案密度依赖性和曝光余量。