公开(公告)号：US5567637A

公开(公告)日：1996-10-22

申请号：US498409

申请日：1995-07-05

申请人： Toshiyuki Hirota

发明人： Toshiyuki Hirota

IPC分类号： H01L27/04 ,  H01L21/336 ,  H01L21/822 ,  H01L29/423 ,  H01L21/265

CPC分类号： H01L29/66825 ,  H01L29/42324

摘要： There is provided a method of fabrication a storage capacitor. A bottom semiconductor film having an electrical conductivity if formed for subsequent formation of a phase splitting glass film on the bottom semiconductor film. The phase splitting glass film is subjected to a heat treatment to allow the phase splitting glass film to be split into at least two different glass films which have different components. The phase splitting glass film is subjected to an etching in which one of the glass films has a higher etching rate than an etching rate of another of the glass films so that the one glass film having the higher etching rate only is removed, while the another glass film remains thereby a mask pattern comprising the remaining another glass film is formed. The bottom semiconductor film is subjected to a dry etching using the mask to form trench grooves defined by trench pillars in the bottom semiconductor film. A dielectric film is formed on surfaces of the trench grooves and trench pillars. A top semiconductor film having an electrical conductivity is formed on the dielectric film.

摘要翻译： 提供一种制造存储电容器的方法。 如果形成用于随后在底部半导体膜上形成分相玻璃膜，则具有导电性的底部半导体膜。 对相分裂玻璃膜进行热处理，使分相玻璃膜分成至少两种不同成分的不同的玻璃膜。 对相分离玻璃膜进行蚀刻，其中一个玻璃膜具有比另一个玻璃膜的蚀刻速率更高的蚀刻速率，使得仅去除较高蚀刻速率的一个玻璃膜，而另一个 由此形成玻璃膜，从而形成包含剩余的另一玻璃膜的掩模图案。 使用掩模对底部半导体膜进行干蚀刻，以在底部半导体膜中形成由沟槽柱限定的沟槽。 在沟槽和沟槽柱的表面上形成电介质膜。 在电介质膜上形成具有导电性的顶部半导体膜。

公开(公告)号：US20160087028A1

公开(公告)日：2016-03-24

申请号：US14892928

申请日：2014-05-14

申请人： Toshiyuki HIROTA ,  Takakazu MATSUI ,  PS4 LUXCO S.A.R.L.

发明人： Toshiyuki Hirota ,  Takakazu Matsui

IPC分类号： H01L49/02 ,  H01L21/02

CPC分类号： H01L28/60 ,  C23C16/045 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02211 ,  H01L21/02244 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L27/1085 ,  H01L28/40

摘要： One semiconductor device includes a capacitor having a lower electrode which is arranged on a semiconductor substrate, a second protective film, a dielectric film which has a defect that extends in the film thickness direction from an upper surface that faces the second protective film, a third protective film which has at least a defect filling film that is formed of an insulating body filling the defect, a first protective film which covers the dielectric film and the third protective film, and an upper electrode which covers the first protective film.

摘要翻译： 一个半导体器件包括具有布置在半导体衬底上的下电极的电容器，第二保护膜，具有从面向第二保护膜的上表面沿膜厚度方向延伸的缺陷的电介质膜，第三 保护膜至少具有由填充缺陷的绝缘体形成的缺陷填充膜，覆盖电介质膜和第三保护膜的第一保护膜和覆盖第一保护膜的上电极。

公开(公告)号：US08354702B1

公开(公告)日：2013-01-15

申请号：US12708848

申请日：2010-02-19

申请人： Sunil Shanker ,  Xiangxin Rui ,  Pragati Kumar ,  Hanhong Chen ,  Toshiyuki Hirota

发明人： Sunil Shanker ,  Xiangxin Rui ,  Pragati Kumar ,  Hanhong Chen ,  Toshiyuki Hirota

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： C01G23/07 ,  C01G39/02 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/75

摘要： This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO2) for use as a dielectric, thereby leading to predictable and reproducible higher dielectric constant and lower effective oxide thickness and, thus, greater part density at lower cost.

公开(公告)号：US20120146859A1

公开(公告)日：2012-06-14

申请号：US13306906

申请日：2011-11-29

申请人： Toshiyuki Hirota

发明人： Toshiyuki Hirota

IPC分类号： H01Q1/24

CPC分类号： H01Q1/2266 ,  H04B7/04

摘要： According to one embodiment, an apparatus includes a first antenna corresponding to a frequency band not higher than a predetermined frequency, a second antenna corresponding to a frequency band higher than the predetermined frequency, a first cable includes one end connected to the first antenna, a second cable includes one end connected to the second antenna, a first mixer/distributor connected to another end of the first cable and another end of the second cable, a third cable includes one end connected to the first mixer/distributor, and a wireless communication module connected to another end of the third cable, wherein the first mixer/distributor is configured to mix a first signal received by the first antenna and a second signal received by the second antenna, and to output a mixed signal to the third cable, and the wireless communication module is configured to receive the mixed signal via the third cable.

摘要翻译： 根据一个实施例，一种装置包括对应于不高于预定频率的频带的第一天线，对应于高于预定频率的频带的第二天线，第一线缆包括连接到第一天线的一端， 第二电缆包括连接到第二天线的一端，连接到第一电缆的另一端和第二电缆的另一端的第一混频器/分配器，第三电缆包括连接到第一混频器/分配器的一端和无线通信 模块连接到第三电缆的另一端，其中第一混频器/分配器被配置为混合由第一天线接收的第一信号和由第二天线接收的第二信号，并将混合信号输出到第三电缆，以及 无线通信模块经配置以经由第三缆线接收混合信号。

公开(公告)号：US20120075164A1

公开(公告)日：2012-03-29

申请号：US13307594

申请日：2011-11-30

申请人： Hiroshi Shimasaki ,  Masao Teshima ,  Satoshi Mizoguchi ,  Anwar Sathath ,  Toshiyuki Hirota

发明人： Hiroshi Shimasaki ,  Masao Teshima ,  Satoshi Mizoguchi ,  Anwar Sathath ,  Toshiyuki Hirota

IPC分类号： H01Q21/28

CPC分类号： H01Q1/2266 ,  G06F1/1616 ,  G06F1/1698 ,  H01Q21/28

摘要： Information equipment according to an embodiment includes a display housing with a display unit, a first radio communication antenna disposed at an end part of the display housing, a second radio communication antenna using a frequency band adjacent to or overlapped with that of the first radio communication antenna, and a third radio communication antenna disposed at an end part between the first and the second radio communication antennas, and uses a frequency band not adjacent to nor overlapped with those of the first and the second radio communication antennas.

摘要翻译： 根据实施例的信息设备包括具有显示单元的显示器壳体，设置在显示器壳体的端部的第一无线电通信天线，使用与第一无线电通信的相邻或重叠的频带的第二无线电通信天线 天线，以及设置在第一和第二无线电通信天线之间的端部的第三无线电通信天线，并且使用与第一和第二无线电通信天线不相邻或与其重叠的频带。

公开(公告)号：US08062979B2

公开(公告)日：2011-11-22

申请号：US12046639

申请日：2008-03-12

申请人： Toshiyuki Hirota

发明人： Toshiyuki Hirota

IPC分类号： H01L21/302

CPC分类号： H01L21/3081 ,  H01L21/3083 ,  H01L21/76224

摘要： The object of the present invention is to embed an insulating film in a hole having a high aspect ratio and a small width without the occurrence of a void. The thickness of a polishing stopper layer is reduced by making separate layers respectively serve as a mask during forming the hole in a semiconductor substrate, and a stopper during removing the insulating film filled in the hole.

摘要翻译： 本发明的目的是将绝缘膜嵌入具有高纵横比和小宽度的孔中而不发生空隙。 通过在形成半导体衬底中的孔期间分别用作掩模的分隔层和在填充在孔中的绝缘膜去除期间的止动件来减少抛光阻挡层的厚度。

公开(公告)号：US20110217939A1

公开(公告)日：2011-09-08

申请号：US13042036

申请日：2011-03-07

申请人： Toshiyuki Hirota ,  Masao Teshima ,  Anwar Sathath ,  Takeshi Tajima

发明人： Toshiyuki Hirota ,  Masao Teshima ,  Anwar Sathath ,  Takeshi Tajima

IPC分类号： H04B1/04

CPC分类号： H04B1/04

摘要： According to one embodiment, an information processing apparatus includes an antenna, a switch circuit, a wireless communication module and a resonance frequency controller. The switch circuit is configured to switch a resonance frequency band of the antenna between a first resonance frequency band and a second resonance frequency band. The wireless communication module is configured to execute wireless communication by use of the first resonance frequency band and wireless communication by use of the second resonance frequency band. The resonance frequency controller is configured to control the switch circuit in order to set the resonance frequency band of the antenna to one of the first resonance frequency band and the second resonance frequency band based on status information indicating an execution state of wireless communication by use of the wireless communication module. The resonance frequency controller acquires the status information from the wireless communication module.

摘要翻译： 根据一个实施例，信息处理设备包括天线，开关电路，无线通信模块和谐振频率控制器。 开关电路被配置为在第一谐振频带和第二谐振频带之间切换天线的谐振频带。 无线通信模块被配置为通过使用第一共振频带和通过使用第二共振频带进行无线通信来执行无线通信。 谐振频率控制器被配置为控制开关电路，以便基于通过使用指示无线通信的执行状态的状态信息将天线的共振频带设置为第一共振频带和第二共振频带之一 无线通信模块。 共振频率控制器从无线通信模块获取状态信息。

公开(公告)号：US07943520B2

公开(公告)日：2011-05-17

申请号：US12246649

申请日：2008-10-07

申请人： Toshiyuki Hirota

发明人： Toshiyuki Hirota

IPC分类号： H01L21/768

CPC分类号： H01L21/76816 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/3141 ,  H01L21/31608

摘要： A hole pattern forming method that forms a fine hole pattern in a work target layer that is formed on a semiconductor substrate, includes: forming a three-layer structure by laminating a carbon film layer, an intermediate mask layer, and a photoresist layer in that order on the work target layer; after patterning a hole pattern in the photoresist layer, patterning the hole pattern in the intermediate mask layer with the patterned photoresist layer serving as a mask; forming a sidewall oxide film on exposed portions of the photoresist layer, the intermediate mask layer, and the carbon film layer; forming a sidewall portion that includes the sidewall oxide film on inner wall surfaces of the hole pattern by etching back the sidewall oxide film; and after patterning a fine hole pattern in the carbon film layer with the sidewall portion and the intermediate mask layer serving as a mask, patterning the fine hole pattern in the work target layer with the patterned carbon film layer serving as a mask.

摘要翻译： 在形成在半导体基板上的工件对象层中形成细孔图形的孔图案形成方法包括：通过层叠碳膜层，中间掩模层和光致抗蚀剂层来形成三层结构，其中 在工作目标层上的顺序; 在图案化光致抗蚀剂层中的孔图案之后，用图案化的光致抗蚀剂层作为掩模来对中间掩模层中的孔图案进行构图; 在光致抗蚀剂层，中间掩模层和碳膜层的暴露部分上形成侧壁氧化膜; 通过蚀刻所述侧壁氧化物膜来形成在所述孔图案的内壁表面上包括所述侧壁氧化膜的侧壁部分; 并且在侧壁部分和中间掩模层用作掩模的碳膜层中图案化细孔图案之后，用作为掩模的图案化碳膜层对作业目标层中的细孔图案进行图案化。

公开(公告)号：US20100035402A1

公开(公告)日：2010-02-11

申请号：US12461313

申请日：2009-08-07

申请人： Toshiyuki Hirota

发明人： Toshiyuki Hirota

IPC分类号： H01L21/02 ,  H01L21/768

CPC分类号： H01L28/91 ,  H01L21/76816 ,  H01L27/10817 ,  H01L27/10852

摘要： A method for manufacturing a semiconductor device includes forming a first interlayer insulating film over a semiconductor substrate; forming a first opening in the first interlayer insulating film; forming a second interlayer insulating film on the first interlayer insulating film such that the first opening is not filled; and forming a second opening in the second interlayer insulating film such that the second opening is connected to the first opening.

摘要翻译： 一种半导体器件的制造方法包括在半导体衬底上形成第一层间绝缘膜; 在所述第一层间绝缘膜中形成第一开口; 在所述第一层间绝缘膜上形成第二层间绝缘膜，使得所述第一开口未被填充; 以及在所述第二层间绝缘膜中形成第二开口，使得所述第二开口连接到所述第一开口。

公开(公告)号：US20070252827A1

公开(公告)日：2007-11-01

申请号：US11717931

申请日：2007-03-14

申请人： Toshiyuki Hirota

发明人： Toshiyuki Hirota

IPC分类号： G06F3/038

CPC分类号： G06F1/162 ,  G06F1/1643 ,  G06F1/1677 ,  G06F1/1683 ,  G06F1/1694 ,  G06F2200/1614 ,  H04B1/3838 ,  H04B7/0602 ,  H04B7/0689

摘要： According to one embodiment, an information processing apparatus includes a display unit. A display portion is provided in the display unit. Antennas are provided in the display unit. The antennas include a first antenna which serves as a transmitting antenna and a second antenna which serves as a receiving antenna. An antenna switching unit makes, when the display unit is used in a state where the first antenna is located in a side of the display unit which side is closest to a user, the first antenna serve as the receiving antenna, and the second antenna serve as the transmitting antenna.

摘要翻译： 根据一个实施例，信息处理设备包括显示单元。 在显示单元中设置显示部。 天线在显示单元中提供。 天线包括用作发射天线的第一天线和用作接收天线的第二天线。 天线切换单元使得当第一天线位于显示单元的最靠近用户的一侧的状态下使用显示单元时，第一天线用作接收天线，并且第二天线服务 作为发射天线。