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公开(公告)号：US20110103039A1
公开(公告)日：2011-05-05
申请号：US12922127
申请日：2009-03-09
CPC分类号： H05B33/10 , Y10T428/24298 , Y10T428/24331
摘要： The present invention relates to a luminescent component (30) and a manufacturing method thereof. The luminescent component (30) comprises a first transparent carrier (18), a second transparent carrier (24), a substrate (10) sandwiched between said transparent carriers (18; 24), the substrate (10) comprising a conduit from the first transparent layer (18) to the second transparent carrier (24), the conduit being filled with a luminescent solution (20). This facilitates the use of colloidal solutions of quantum dots in such a luminescent component (30). Preferably, the substrate (10) is direct bonded to the transparent carriers (18, 24) using direct wafer bonding techniques.
摘要翻译： 本发明涉及发光成分（30）及其制造方法。 发光组件（30）包括第一透明载体（18），第二透明载体（24），夹在所述透明载体（18; 24）之间的基底（10），所述基底（10） 透明层（18）连接到第二透明载体（24），导管填充有发光溶液（20）。 这有助于在这种发光组分（30）中使用量子点的胶体溶液。 优选地，使用直接晶片接合技术将衬底（10）直接接合到透明载体（18,24）。
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公开(公告)号：US20110006328A1
公开(公告)日：2011-01-13
申请号：US12864752
申请日：2009-01-27
CPC分类号： H01L25/167 , H01L31/105 , H01L31/153 , H01L33/486 , H01L2224/16225 , H01L2924/0002 , H05B33/0803 , H05B33/0866 , H01L2924/00
摘要： A lighting unit comprises a packaging substrate (10) formed from a semiconductor, a channel (12) formed in the substrate and a discrete light emitting diode arrangement (34) in the channel. A surface region of the channel comprises doped semiconductor layers (20,24) which define a light sensor. The arrangement provides a light sensor (which can be used to determine colour and/or output flux) for a LED unit, with the light sensor embedded in substrate used for packaging. This provides a low cost integration process and provides good registration between the light sensor and the LED output.
摘要翻译： 照明单元包括由半导体形成的封装衬底（10），形成在衬底中的沟道（12）和沟道中的离散发光二极管装置（34）。 通道的表面区域包括限定光传感器的掺杂半导体层（20,24）。 该装置提供用于LED单元的光传感器（其可以用于确定颜色和/或输出通量），其中光传感器嵌入用于包装的基板中。 这提供了低成本的集成过程，并且在光传感器和LED输出之间提供良好的配准。
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23.发明申请Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate 失效用于同时产生至少一对半导体结构的方法，每个半导体结构在衬底上包括至少一个有用层公开(公告)号：US20060286770A1
公开(公告)日：2006-12-21
申请号：US11509047
申请日：2006-08-24
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a front face of the source substrate; bonding the front face of the source substrate to a support substrate and detaching the useful layer from the source substrate at the zone of weakness to transfer the useful layer to the support substrate; implanting atomic species into a free face of the useful layer to a controlled mean implantation depth therein to form a zone of weakness within the useful layer that defines front and rear useful layers, with the rear useful layer contacting the source substrate and the front useful layer containing a greater concentration of defects; bonding a stiffening substrate to the free face of the front useful layer after implantation of the atomic species; and detaching the front useful layer from the rear useful layer along the zone of weakness to form a semiconductor structure comprising the support substrate and the rear useful layer thereon. The structures obtained can be used in the fields of electronics, optoelectronics or optics.
摘要翻译： 一种用于制造半导体结构的方法，所述半导体结构在衬底上包括至少一个有用层。 该方法包括提供源极基底中的弱化区域，其在弱化区域和源极基底的前面之间限定相对较厚的有用层; 将源极基板的正面粘合到支撑基板上，并在弱化区域将有用层与源极基板分离，以将有用层转移到支撑基板; 将原子物质植入有用层的自由面中，以在其中形成受控的平均注入深度，以在限定前后有用层的有用层内形成弱化区，其中后部有用层与源极基底和前部有用层接触 含有较大浓度的缺陷; 在加入原子物质之后将加强基底粘合到前有用层的自由面上; 并且沿着弱化区从后部有用层分离前部有用层，以形成包括支撑基板和其上的后部有用层的半导体结构。 所获得的结构可用于电子学，光电子学或光学领域。
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公开(公告)号：US20080063143A1
公开(公告)日：2008-03-13
申请号：US11666368
申请日：2005-10-24
IPC分类号： G01N23/20
摘要： The adhesion between two layers, in particular two thin layers of a microelectronic device, is a data item of importance. It was found that the closure ratio of the interface could be used, in non-destructive manner, to determine a measurement of bond energy. A method and a device using a magnitude characteristic of this length are described, in particular using low incidence X-ray reflection and electronic density at the interface.
摘要翻译： 两层之间的粘附，特别是微电子器件的两个薄层，是重要的数据项。 已经发现界面的封闭比可以以非破坏性方式用于确定键能的测量。 具体地说，使用该长度的幅度特性的方法和装置，特别是在界面处使用低入射X射线反射和电子密度。
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25.发明授权Method for production of a very thin layer with thinning by means of induced self-support 有权通过诱导自支撑生产具有变薄的非常薄层的方法公开(公告)号：US07776714B2
公开(公告)日：2010-08-17
申请号：US10558621
申请日：2004-06-03
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： The invention relates to a process for obtaining a thin layer made of a first material on a substrate made of a second material called the final substrate, including the following steps: bonding a thick layer of a first material on one of its main faces on the final substrate at an interface, implantation of gaseous species in the thick layer of first material to create a weakened zone delimiting said thin layer between the interface and the weakened zone, deposit a layer of third material called the self-supporting layer on the thick layer made of first material, fracture within the structure composed of the final substrate, the thick layer of first material and the layer of third material, at the weakened zone to supply the substrate supporting said thin layer.
摘要翻译： 本发明涉及一种获得由第二材料制成的基板上由第一材料制成的薄层的方法，所述第二材料被称为最终基板，包括以下步骤：将第一材料的厚层在其主面之一 在界面处的最终底物，在第一材料的厚层中注入气态物质以产生限定界面和弱化区之间的所述薄层的弱化区，在厚层上沉积称为自支撑层的第三材料层 由第一材料制成，在由最终基底构成的结构内的断裂，第一材料的厚层和第三材料层在弱化区域处供应支撑所述薄层的基板。
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公开(公告)号：US07688946B2
公开(公告)日：2010-03-30
申请号：US11666368
申请日：2005-10-24
IPC分类号： G01N23/20
摘要： The adhesion between two layers, in particular two thin layers of a microelectronic device, is a data item of importance. It was found that the closure ratio of the interface could be used, in non-destructive manner, to determine a measurement of bond energy. A method and a device using a magnitude characteristic of this length are described, in particular using low incidence X-ray reflection and electronic density at the interface.
摘要翻译： 两层之间的粘附，特别是微电子器件的两个薄层，是重要的数据项。 已经发现界面的封闭比可以以非破坏性方式用于确定键能的测量。 具体地说，使用该长度的幅度特性的方法和装置，特别是在界面处使用低入射X射线反射和电子密度。
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27.发明申请Method for production of a very thin layer with thinning by means of induced self-support 有权通过诱导自支撑生产具有变薄的非常薄层的方法公开(公告)号：US20070020895A1
公开(公告)日：2007-01-25
申请号：US10558621
申请日：2004-06-03
IPC分类号： H01L21/04
CPC分类号： H01L21/76254
摘要： The invention relates to a process for obtaining a thin layer made of a first material on a substrate made of a second material called the final substrate, including the following steps: bonding a thick layer of a first material on one of its main faces on the final substrate at an interface, implantation of gaseous species in the thick layer of first material to create a weakened zone delimiting said thin layer between the interface and the weakened zone, deposit a layer of third material called the self-supporting layer on the thick layer made of first material, fracture within the structure composed of the final substrate, the thick layer of first material and the layer of third material, at the weakened zone to supply the substrate supporting said thin layer.
摘要翻译： 本发明涉及一种获得由第二材料制成的基板上由第一材料制成的薄层的方法，所述第二材料被称为最终基板，包括以下步骤：将第一材料的厚层在其主面之一 在界面处的最终底物，在第一材料的厚层中注入气态物质以产生限定界面和弱化区之间的所述薄层的弱化区，在厚层上沉积称为自支撑层的第三材料层 由第一材料制成，在由最终基底构成的结构内的断裂，第一材料的厚层和第三材料层在弱化区域处供应支撑所述薄层的基板。
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公开(公告)号：US08853632B2
公开(公告)日：2014-10-07
申请号：US13062873
申请日：2009-09-07
CPC分类号： G01J5/12 , G01J5/022 , G01J5/0806 , G01J5/0815 , G01J5/0853
摘要： An IR sensor comprises a heat sink substrate (10) having portions (12) of relatively high thermal conductivity and portions (14) of relatively low thermal conductivity and a planar thermocouple layer (16) having a hot junction (18) and a cold junction (20), with the hot junction (18) located on a portion (14) of the heat sink substrate with relatively low thermal conductivity. A low thermal conductivity dielectric layer (22) is provided over the thermocouple layer (16), and has a via (24) leading to the hot junction (18). An IR reflector layer (26) covers the low thermal conductivity dielectric layer (22) and the side walls of the via (24). An IR absorber (30; 30′) is within the via. This structure forms a planar IR microsensor which uses a structured substrate and a dielectric layer to avoid the need for any specific packaging. This design provides a higher sensitivity by providing a focus on the thermocouple, and also gives better immunity to gas conduction and convection.
摘要翻译： IR传感器包括散热基板（10），散热基板（10）具有相对较高导热率的部分（12）和相对较低导热率的部分（14）和具有热接点（18）的平面热电偶层（16） （20），热接头（18）位于散热器衬底的一部分（14）上，导热系数相对较低。 在热电偶层（16）之上提供低导热介电层（22），并且具有通向热连接点（18）的通孔（24）。 IR反射器层（26）覆盖低导热介电层（22）和通孔（24）的侧壁。 IR吸收器（30; 30'）在通孔内。 该结构形成平面的IR微传感器，其使用结构化基板和电介质层以避免对任何特定封装的需要。 该设计通过提供对热电偶的关注而提供更高的灵敏度，并且还对气体传导和对流提供更好的抗扰性。
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公开(公告)号：US20110305258A1
公开(公告)日：2011-12-15
申请号：US13062873
申请日：2009-09-07
IPC分类号： G01J5/12
CPC分类号： G01J5/12 , G01J5/022 , G01J5/0806 , G01J5/0815 , G01J5/0853
摘要： An IR sensor comprises a heat sink substrate (10) having portions (12) of relatively high thermal conductivity and portions (14) of relatively low thermal conductivity and a planar thermocouple layer (16) having a hot junction (18) and a cold junction (20), with the hot junction (18) located on a portion (14) of the heat sink substrate with relatively low thermal conductivity. A low thermal conductivity dielectric layer (22) is provided over the thermocouple layer (16), and has a via (24) leading to the hot junction (18). An IR reflector layer (26) covers the low thermal conductivity dielectric layer (22) and the side walls of the via (24). An IR absorber (30; 30′) is within the via. This structure forms a planar IR microsensor which uses a structured substrate and a dielectric layer to avoid the need for any specific packaging. This design provides a higher sensitivity by providing a focus on the thermocouple, and also gives better immunity to gas conduction and convection.
摘要翻译： IR传感器包括散热基板（10），散热基板（10）具有相对较高导热率的部分（12）和具有相对较低导热率的部分（14）和具有热接点（18）的平面热电偶层（16） （20），热接头（18）位于散热器衬底的一部分（14）上，导热系数相对较低。 在热电偶层（16）之上提供低导热介电层（22），并且具有通向热连接点（18）的通孔（24）。 IR反射器层（26）覆盖低导热介电层（22）和通孔（24）的侧壁。 IR吸收器（30; 30'）在通孔内。 该结构形成平面的IR微传感器，其使用结构化基板和电介质层以避免对任何特定封装的需要。 该设计通过提供对热电偶的关注而提供更高的灵敏度，并且还对气体传导和对流提供更好的抗扰性。
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30.发明授权Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate 失效用于同时产生至少一对半导体结构的方法，每个半导体结构在衬底上包括至少一个有用层公开(公告)号：US07115481B2
公开(公告)日：2006-10-03
申请号：US10686084
申请日：2003-10-14
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate. The method includes providing an initial structure that includes a useful layer having a front face on a support substrate. Atomic species are implanted into the useful layer to a controlled mean implantation depth to form a zone of weakness within the useful layer that defines first and second useful layers. Next, a stiffening substrate is bonded to the front face of the initial structure. The first useful layer is then detached from the second useful layer along the zone of weakness to obtain a pair of semiconductor structures with a first structure including the stiffening substrate and the first useful layer and a second structure including the support substrate and the second useful layer. The structures obtained can be used in the fields of electronics, optoelectronics or optics.
摘要翻译： 一种用于同时产生至少一对半导体结构的方法，每个半导体结构在衬底上包括至少一个有用层。 该方法包括提供初始结构，其包括在支撑衬底上具有正面的有用层。 将原子物质植入有用层中至受控的平均植入深度，以形成限定第一和第二有用层的有用层内的弱点区域。 接下来，将加强基板粘合到初始结构的正面。 然后沿着弱化区从第二有用层分离第一有用层，以获得一对具有第一结构的半导体结构，该第一结构包括加强衬底和第一有用层，以及包括支撑衬底和第二有用层的第二结构 。 所获得的结构可用于电子学，光电子学或光学领域。
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