Plasma etching method
    22.
    发明授权
    Plasma etching method 有权
    等离子蚀刻法

    公开(公告)号:US09034198B2

    公开(公告)日:2015-05-19

    申请号:US14235857

    申请日:2012-07-30

    摘要: A plasma etching method using a plasma etching apparatus including a lower electrode and an upper electrode is provided. The plasma etching method includes a first etching step of performing plasma etching using a first process gas and a second etching step of performing the plasma etching using a second process gas. The adhesion of a radical of the second process gas to an object of processing is less than the adhesion of a radical of the first process gas to the object of processing. While alternately repeating a first condition of turning on high-frequency electric power for plasma generation and a second condition of turning off the high-frequency electric power, the second etching step applies a negative direct-current voltage to the upper electrode so that the absolute value of the applied voltage is greater in a period of the second condition than in a period of the first condition.

    摘要翻译: 提供了使用包括下电极和上电极的等离子体蚀刻装置的等离子体蚀刻方法。 等离子体蚀刻方法包括使用第一处理气体进行等离子体蚀刻的第一蚀刻步骤和使用第二处理气体进行等离子体蚀刻的第二蚀刻步骤。 第二工艺气体的基团与加工对象的粘附小于第一工艺气体的基团与加工对象的粘附。 在交替地重复开启用于等离子体产生的高频电力的第一条件和关闭高频电力的第二条件时,第二蚀刻步骤向上电极施加负的直流电压,使得绝对 施加电压的值在第二状态的期间比在第一状态的期间更大。

    PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS AND STORAGE MEDIUM
    23.
    发明申请
    PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS AND STORAGE MEDIUM 有权
    等离子体蚀刻方法,等离子体蚀刻装置和储存介质

    公开(公告)号:US20100213162A1

    公开(公告)日:2010-08-26

    申请号:US12707957

    申请日:2010-02-18

    IPC分类号: C23F1/00 C23F1/08

    摘要: There is provided a plasma etching method capable of achieving a sufficient organic film modifying effect by high-velocity electrons. In forming a hole in an etching target film by plasma etching, a first condition of generating plasma within a processing chamber by way of turning on a plasma-generating high frequency power application unit and a second condition of not generating the plasma within the processing chamber by way of turning off the plasma-generating high frequency power application unit are repeated alternately. Further, a negative DC voltage is applied from a first DC power supply such that an absolute value of the applied negative DC voltage during a period of the second condition is greater than an absolute value of the applied negative DC voltage during a period of the first condition.

    摘要翻译: 提供了能够通过高速电子获得充分的有机膜修饰效果的等离子体蚀刻方法。 在通过等离子体蚀刻在蚀刻靶膜中形成孔时,通过开启等离子体产生高频电力施加单元和在处理室内不产生等离子体的第二条件,在处理室内产生等离子体的第一条件 通过关闭等离子体产生高频电力应用单元交替重复。 此外,从第一直流电源施加负的直流电压,使得在第二状态的周期期间所施加的负的直流电压的绝对值大于在第一状态期间施加的负的直流电压的绝对值 条件。

    Flat image display device with filamentary cathode support structure
    25.
    发明授权
    Flat image display device with filamentary cathode support structure 失效
    具有丝状阴极支撑结构的平面图像显示装置

    公开(公告)号:US5300857A

    公开(公告)日:1994-04-05

    申请号:US774818

    申请日:1991-10-11

    CPC分类号: H01J1/18 H01J31/126

    摘要: An image display device displays an image based on visible fluorescent radiation caused by electron beams emitted from a plurality of parallel spaced filamentary cathodes that extend over a substrate. A pair of support bars fixed to opposite sides of the substrate has a pair of spaced arrays of through holes defined therein, and supports a pair of spaced arrays of electrically conductive pins extending through through holes, with a plurality of electrically insulating bodies disposed around the electrically conductive pins and fitted in the through holes, respectively. Each of the filamentary cathodes has opposite ends secured to the support member and held against outer circumferential surfaces of one pair of electrically conductive pins of the spaced arrays.

    摘要翻译: 图像显示装置基于从在衬底上延伸的多个平行间隔的丝状阴极发射的电子束引起的可见荧光辐射来显示图像。 固定在基板的相对侧上的一对支撑杆具有一对限定在其中的间隔开的通孔阵列,并且支撑一对延伸穿过通孔的间隔开的导电销的阵列,多个电绝缘体围绕着 导电销并分别安装在通孔中。 每个丝状阴极具有固定到支撑构件的相对端并且保持在间隔开的阵列的一对导电针的外周表面上。

    Flat picture display device
    26.
    发明授权
    Flat picture display device 失效
    平板显示设备

    公开(公告)号:US5134338A

    公开(公告)日:1992-07-28

    申请号:US615010

    申请日:1990-11-19

    IPC分类号: H01J1/18 H01J29/46 H01J31/12

    CPC分类号: H01J29/46 H01J1/18 H01J31/126

    摘要: A picture display device includes an envelope having a faceplate, having an inner surface formed with a phosphor screen, and a back covering coupled to the faceplate to define an evacuated chamber; filament-like cathode electrodes and electron beam control electrodes disposed within the evacuated chamber for emitting electron beams towards the phosphor screen; a cathode electrode support member for retaining the cathode electrodes and having one of opposite surfaces held in contact therewith; a shape retention plate for retaining at least the cathode electrodes and the support member in a predetermined curved shape; a plurality of support struts for fixing the shape retention plate in a face-to-face relationship with the phosphor screen; and a reinforcement grid structure disposed in contact with a surface of the shape retention plate opposite that facing the phosphor screen so as to follow the curvature of the shape retention plate.

    Electron beam generation apparatus
    27.
    发明授权
    Electron beam generation apparatus 失效
    电子束产生装置

    公开(公告)号:US4887000A

    公开(公告)日:1989-12-12

    申请号:US116848

    申请日:1987-11-05

    IPC分类号: H01J29/04 H01J31/12

    CPC分类号: H01J31/126 H01J29/04

    摘要: In an electron beam generation apparatus for a flat cathode ray tube, line cathodes are stretched in an arc shaped form and held by plural cathode position defining members. The cathode position defining members are disposed along the line cathode in a forward convex arc which protrudes most at its center and less towards its respective ends. An electron beam take-out electrode is placed at a in front side of the line cathode and a back electrode is placed at a back side of said line cathode, the electron beam take-out electrode and back electrode also being arc shaped.

    摘要翻译: 在用于平面阴极射线管的电子束产生装置中,线阴极被拉伸成弧形并被多个阴极位置限定件保持。 阴极位置限定构件沿着线状阴极设置在向前凸弧中,其在其中心处最突出并且朝向其相应的端部较小。 电子束取出电极被放置在线阴极的正面,背面电极位于所述线阴极的背面,电子束取出电极和背面电极也是弧形的。

    Method for producing a Zn-series electroplated steel sheet
    28.
    发明授权
    Method for producing a Zn-series electroplated steel sheet 失效
    Zn系电镀钢板的制造方法

    公开(公告)号:US4857154A

    公开(公告)日:1989-08-15

    申请号:US68108

    申请日:1987-06-29

    摘要: A method for producing a steel sheet electroplated with a Zn-series alloy or Zn-series composite material, comprising, using an identical plating liquid, forming an initial electroplated layer in an amount essentially smaller than a subsequent main plating layer: relieving an electrodeposition strain in the initial electroplated layer after or during the formation thereof, and forming the main plating layer on the initial electroplated layer essentially free of the electrodeposition strain, thereby improving a plating adherence of the electroplated layer of Zn-series alloy or Zn-series composite material.

    摘要翻译: 一种用Zn系合金或Zn系复合材料电镀的钢板的制造方法,其特征在于,使用相同的电镀液形成初始电镀层,所述初始电镀层的主要电镀量基本上小于随后的主镀层:缓和电沉积应变 在初始电镀层中或在其形成期间,在基本上不含电沉积应变的初始电镀层上形成主镀层,从而提高Zn系合金或Zn系复合材料的电镀层的电镀附着力 。

    Process for the production of polytetramethylene ether glycol
    29.
    发明授权
    Process for the production of polytetramethylene ether glycol 失效
    生产聚四亚甲基醚二醇的方法

    公开(公告)号:US4209641A

    公开(公告)日:1980-06-24

    申请号:US966657

    申请日:1978-12-05

    CPC分类号: C08G65/20 C08G18/4854

    摘要: An improved process for the production of polytetramethylene ether glycol is disclosed. Polytetramethylene ether glycol is obtained with a high yield by subjecting tetrahydrofuran to ring opening polymerization in the presence or absence of an organic solvent with the use of, as a catalyst, a lithium halide in conjunction with fuming sulfuric acid. Average molecular weight of the glycol product can be controlled in the range of 1000-3000 at will by varying the amounts of the lithium halide and fuming sulfuric acid used.

    摘要翻译: 公开了改进的制备聚四亚甲基醚二醇的方法。 通过在有机溶剂存在或不存在下,使用卤代卤化物与发烟硫酸作为催化剂,使四氢呋喃进行开环聚合,从而获得高收率的聚四亚甲基醚二醇。 通过改变所用的卤化锂和发烟硫酸的量,二醇产物的平均分子量可以随意控制在1000-3000的范围内。

    PLASMA ETCHING METHOD
    30.
    发明申请
    PLASMA ETCHING METHOD 有权
    等离子体蚀刻法

    公开(公告)号:US20140144876A1

    公开(公告)日:2014-05-29

    申请号:US14235857

    申请日:2012-07-30

    IPC分类号: H05H1/46

    摘要: A plasma etching method using a plasma etching apparatus including a lower electrode and an upper electrode is provided. The plasma etching method includes a first etching step of performing plasma etching using a first process gas and a second etching step of performing the plasma etching using a second process gas. The adhesion of a radical of the second process gas to an object of processing is less than the adhesion of a radical of the first process gas to the object of processing. While alternately repeating a first condition of turning on high-frequency electric power for plasma generation and a second condition of turning off the high-frequency electric power, the second etching step applies a negative direct-current voltage to the upper electrode so that the absolute value of the applied voltage is greater in a period of the second condition than in a period of the first condition.

    摘要翻译: 提供了使用包括下电极和上电极的等离子体蚀刻装置的等离子体蚀刻方法。 等离子体蚀刻方法包括使用第一处理气体进行等离子体蚀刻的第一蚀刻步骤和使用第二处理气体进行等离子体蚀刻的第二蚀刻步骤。 第二工艺气体的基团与加工对象的粘附小于第一工艺气体的基团与加工对象的粘附。 在交替地重复开启用于等离子体产生的高频电力的第一条件和关闭高频电力的第二条件时,第二蚀刻步骤向上电极施加负的直流电压,使得绝对 施加电压的值在第二状态的期间比在第一状态的期间更大。