公开(公告)号：US5122483A

公开(公告)日：1992-06-16

申请号：US634528

申请日：1990-12-27

申请人： Shigeki Sakai ,  Kiyoshi Ogata ,  Tsukasa Hayashi

发明人： Shigeki Sakai ,  Kiyoshi Ogata ,  Tsukasa Hayashi

IPC分类号： C23C14/10 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/822 ,  H01L27/04

CPC分类号： H01L21/02164 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/318 ,  H01L21/3185

摘要： A method of forming a highly insulative silicon oxide thin film including the steps of providing a substrate, depositing silicon on the substrate, and injecting an ion beam of oxygen or a mixed gas consisting of oxygen and an inert gas simultaneously or alternately with the depositing of the silicon. Silicon oxide may be deposited on the substrate in combination with the injection of ions of an inert gas. Other metals made be deposited along with the injection of oxygen or nitrogen cations.

摘要翻译： 一种形成高绝缘性氧化硅薄膜的方法，包括以下步骤：提供衬底，在衬底上沉积硅，以及同时或交替地将氧离子束或由氧气和惰性气体组成的混合气体注入到离子束 硅。 氧化硅可以与注入惰性气体的离子一起沉积在衬底上。 制造的其他金属与氧或氮阳离子的注入一起沉积。

公开(公告)号：US4749888A

公开(公告)日：1988-06-07

申请号：US45152

申请日：1987-05-04

申请人： Shigeki Sakai ,  Hiroshi Akoh ,  Hisao Hayakawa ,  Akihiko Yagi

发明人： Shigeki Sakai ,  Hiroshi Akoh ,  Hisao Hayakawa ,  Akihiko Yagi

IPC分类号： G11C19/32 ,  H01L39/22 ,  H03K3/38 ,  H03K19/195

CPC分类号： H03K3/38 ,  G11C19/32 ,  H01L39/223 ,  H03K19/195 ,  Y10S505/857 ,  Y10S505/858

摘要： A Josephson transmission line device comprising a Josephson transmission line consisting of a pair of superconducting layers and a junction layer disposed between the superconducting layers to constitute a Josephson junction; a fluxon stopping position constituted by at least one resistor element in at least a part of the Josephson transmission line; a fluxon driving current source connected to the resistor element; a fluxon generating current source connected to the Josephson transmission line for generating fluxons therein; and an output circuit for extracting the fluxons generated in the Josephson transmission line as output signals. Fluxons generated in the Josephson transmission line can be made to stop at and depart from the stopping positions by selective application of fluxon driving current. Therefore, the Josephson transmission line can, alone or in combination with other such lines, be made to operate as compact, high-speed, low power-dissipation Josephson electronic circuit devices capable of functioning as logic circuits, memories, pulse generators, etc.

摘要翻译： 约瑟夫逊传输线装置，包括由一对超导层和布置在超导层之间的结层组成的约瑟夫逊传输线，以构成约瑟夫逊结; 在约瑟夫逊传输线的至少一部分中由至少一个电阻元件构成的磁通停止位置; 连接到电阻元件的磁通驱动电流源; 连接到约瑟夫逊传输线的用于产生其中的助剂的通量产生电流源; 以及用于提取在约瑟夫逊传输线中产生的磁通的输出电路作为输出信号。 通过选择性地施加助熔剂驱动电流，可以在约瑟夫逊输电线路中产生的助焊剂停止并停止停止位置。 因此，约瑟夫逊传输线可以单独或与其他线路组合，使其能够作为能够用作逻辑电路，存储器，脉冲发生器等的紧凑型，高速度，低功耗的约瑟夫森电子电路器件。

公开(公告)号：US07935944B2

公开(公告)日：2011-05-03

申请号：US12304241

申请日：2007-06-12

申请人： Junzo Ishikawa ,  Dan Nicolaescu ,  Yasuhito Gotoh ,  Shigeki Sakai

发明人： Junzo Ishikawa ,  Dan Nicolaescu ,  Yasuhito Gotoh ,  Shigeki Sakai

IPC分类号： G21G1/10

CPC分类号： H01J37/026 ,  H01J2237/0041 ,  H01J2237/31701

摘要： An ion beam irradiating apparatus has a field emission electron source 10 which is disposed in a vicinity of a path of the ion beam 2, and which emits electrons 12. The field emission electron source 10 is placed in a direction along which an incident angle formed by the electrons 12 emitted from the electron source 10 and a direction parallel to the traveling direction of the ion beam 2 is in the range from −15 deg. to +45 deg. (an inward direction of the ion beam 2 is +, and an outward direction is −).

摘要翻译： 离子束照射装置具有设置在离子束2的路径附近并发射电子的场致发射电子源10.场致发射电子源10沿着形成的入射角的方向 由电子源10发射的电子12和与离子束2的行进方向平行的方向在-15度的范围内。 至+45度 （离子束2的向内方向为+，向外方向为 - ）。

公开(公告)号：US07667252B2

公开(公告)日：2010-02-23

申请号：US11634042

申请日：2006-12-05

申请人： Shigeki Sakai ,  Kazuo Sakamaki

发明人： Shigeki Sakai ,  Kazuo Sakamaki

IPC分类号： H01L29/76

CPC分类号： H01L29/516 ,  H01L21/28291 ,  H01L27/11585 ,  H01L27/1159 ,  H01L29/6684 ,  H01L29/78391

摘要： To provide a semiconductor nonvolatile storage device capable of applying distributed voltage efficiently to a ferroelectric capacitor in a semiconductor nonvolatile storage device having an MFMIS structure without enlarging a memory cell area and a method of fabricating the same, a ferroelectric nonvolatile storage element is constructed by a structure successively laminated with a first insulator layer (3), a first conductor layer (4), a ferroelectric layer (5) and a second conductor layer (6) on a channel region and is constructed by a structure having a third conductor (9) and a fourth conductor (10) respectively laminated on a source region and a drain region, in which the third conductor (9) and the fourth conductor (10) are opposed to each other via the first conductor layer (4) and a second insulator thin film (11).

摘要翻译： 为了提供能够在没有扩大存储单元区域的情况下，在具有MFMIS结构的半导体非易失性存储器件中的铁电电容器上有效地施加分布电压的半导体非易失性存储器件及其制造方法，铁电非易失性存储元件由 在沟道区域上依次层叠有第一绝缘体层（3），第一导体层（4），铁电体层（5）和第二导体层（6），并且由具有第三导体 ）和分别层叠在源极区域和漏极区域上的第四导体（10），其中第三导体（9）和第四导体（10）经由第一导体层（4）彼此相对，第二导体 绝缘体薄膜（11）。

公开(公告)号：US07608307B2

公开(公告)日：2009-10-27

申请号：US10533810

申请日：2003-11-07

申请人： Shigeki Sakai

发明人： Shigeki Sakai

IPC分类号： C23C8/00 ,  C23C16/00

CPC分类号： C23C14/28 ,  C23C14/542

摘要： A method of forming film on a substrate, in which in a preliminary step information on film thickness deposited on a test substrate prepared for use in collecting information over a fixed irradiation time is obtained in advance while shining a laser beam on a target, there being a fixed positional relationship between spatial positions of the test substrate and an incidence point of the laser beam on the target, or while shining the laser beam on the target while rotating the test substrate. In a main step, a deposition time at each relative positional relationship is adjusted based on film-thickness distribution information obtained in the preliminary step while spatially moving or rotating the substrate or substrate holder about a specific central axis of rotation relative to the incidence point of the laser beam to the target, or while performing both the relative rotation and relative movement.

摘要翻译： 在基板上形成膜的方法，其中在预先步骤中，预先获得沉积在准备用于在固定照射时间收集信息的测试基板上的膜厚度的信息，同时在目标物上照射激光束， 测试基板的空间位置与激光束在目标上的入射点之间的固定位置关系，或者同时在测试基板旋转的同时将激光束照射在目标上。 在主要步骤中，基于在初步步骤中获得的膜厚度分布信息调整每个相对位置关系处的沉积时间，同时相对于入射点的特定中心轴线旋转基板或基板保持器 激光束到达目标，或同时执行相对旋转和相对运动。

公开(公告)号：US20090059646A1

公开(公告)日：2009-03-05

申请号：US11912184

申请日：2006-04-13

申请人： Mitsue Takahashi ,  Shigeki Sakai

发明人： Mitsue Takahashi ,  Shigeki Sakai

IPC分类号： G11C11/22 ,  H01L29/78 ,  H01L27/115 ,  G11C7/00 ,  G11C11/34

CPC分类号： G11C11/22 ,  G11C11/223 ,  H01L21/28291 ,  H01L27/105 ,  H01L27/1159 ,  H01L27/11592

摘要： A field-effect transistor for nonvolatile memory holding use and a field-effect transistor for logical operation use are manufactured in the same structure on the same semiconductor substrate without separately providing manufacturing processes for the field-effect transistors for the two uses. Both a memory circuit and a logic circuit of a semiconductor integrated circuit are composed of n-channel and p-channel field-effect transistors including a memory holding material in a gate insulating structure. A logical operation state, a memory writing state and a nonvolatile memory holding state are electrically switched by controlling the level and application timing of a voltage to be applied between a gate conductor and a substrate region of the n-channel and p-channel field-effect transistors including the memory holding material in the gate insulating structure.

摘要翻译： 在相同的半导体衬底上制造用于非易失性存储器保持用的场效应晶体管和用于逻辑运算使用的场效应晶体管，而不需要为这两种用途的场效应晶体管分别提供制造工艺。 存储电路和半导体集成电路的逻辑电路都由包括栅极绝缘结构中的存储器保持材料的n沟道场效应晶体管和p沟道场效应晶体管构成。 通过控制在n沟道和p沟道场效应晶体管的栅极导体和衬底区域之间施加的电压的电平和施加定时来电逻辑运行状态，存储器写入状态和非易失性存储器保持状态， 包括存储器保持材料在栅极绝缘结构中的效应晶体管。

公开(公告)号：US20080218086A1

公开(公告)日：2008-09-11

申请号：US12043319

申请日：2008-03-06

申请人： Shigeki Sakai

发明人： Shigeki Sakai

IPC分类号： H05H1/00

CPC分类号： H05H1/46 ,  H01J37/32082 ,  H01J37/32935

摘要： A plasma generating apparatus is provided with a plasma generating apparatus for ionizing gas by high frequency discharge within a plasma generating container to thereby generate a plasma and for discharging the plasma to the outside through a plasma discharge hole, an antenna disposed within the plasma generating container for radiating a high frequency wave, an antenna cover made of an insulator and covering a whole of the antenna, a DC voltage measuring device for measuring a DC voltage between the antenna and the plasma generating container, and a comparator for comparing the DC voltage with a reference value, and outputting an alarm signal when an absolute value of the DC voltage value is larger than the absolute value of the reference value.

摘要翻译： 一种等离子体发生装置具有等离子体产生装置，其用于通过等离子体发生容器内的高频放电使气体离子化，从而产生等离子体，并且通过等离子体放电孔将等离子体排放到外部，设置在等离子体产生容器内的天线 用于辐射高频波，由绝缘体制成并覆盖整个天线的天线罩，用于测量天线和等离子体发生容器之间的直流电压的直流电压测量装置，以及用于将直流电压与 参考值，并且当DC电压值的绝对值大于参考值的绝对值时，输出报警信号。

公开(公告)号：US20080001194A1

公开(公告)日：2008-01-03

申请号：US11634042

申请日：2006-12-05

申请人： Shigeki Sakai ,  Kazuo Sakamaki

发明人： Shigeki Sakai ,  Kazuo Sakamaki

IPC分类号： H01L27/108

CPC分类号： H01L29/516 ,  H01L21/28291 ,  H01L27/11585 ,  H01L27/1159 ,  H01L29/6684 ,  H01L29/78391

摘要： To provide a semiconductor nonvolatile storage device capable of applying distributed voltage efficiently to a ferroelectric capacitor in a semiconductor nonvolatile storage device having an MFMIS structure without enlarging a memory cell area and a method of fabricating the same, a ferroelectric nonvolatile storage element is constructed by a structure successively laminated with a first insulator layer (3), a first conductor layer (4), a ferroelectric layer (5) and a second conductor layer (6) on a channel region and is constructed by a structure having a third conductor (9) and a fourth conductor (10) respectively laminated on a source region and a drain region, in which the third conductor (9) and the fourth conductor (10) are opposed to each other via the first conductor layer (4) and a second insulator thin film (11).

摘要翻译： 为了提供能够在没有扩大存储单元区域的情况下，在具有MFMIS结构的半导体非易失性存储器件中的铁电电容器上有效地施加分布电压的半导体非易失性存储器件及其制造方法，铁电非易失性存储元件由 在沟道区域上依次层叠有第一绝缘体层（3），第一导体层（4），铁电体层（5）和第二导体层（6），并且由具有第三导体 ）和分别层叠在源极区域和漏极区域上的第四导体（10），其中第三导体（9）和第四导体（10）经由第一导体层（4）彼此相对，第二导体 绝缘体薄膜（11）。

公开(公告)号：US06784473B2

公开(公告)日：2004-08-31

申请号：US10090851

申请日：2002-03-04

申请人： Shigeki Sakai ,  Kazuo Sakamaki

发明人： Shigeki Sakai ,  Kazuo Sakamaki

IPC分类号： H01L2976

CPC分类号： H01L29/516 ,  H01L21/28291 ,  H01L27/11585 ,  H01L27/1159 ,  H01L29/6684 ,  H01L29/78391

摘要： To provide a semiconductor nonvolatile storage device capable of applying distributed voltage efficiently to a ferroelectric capacitor in a semiconductor nonvolatile storage device having an MFMIS structure without enlarging a memory cell area and a method of fabricating the same, a ferroelectric nonvolatile storage element is constructed by a structure successively laminated with a first insulator layer (3), a first conductor layer (4), a ferroelectric layer (5) and a second conductor layer (6) on a channel region and is constructed by a structure having a third conductor (9) and a fourth conductor (10) respectively laminated on a source region and a drain region, in which the third conductor (9) and the fourth conductor (10) are opposed to each other via the first conductor layer (4) and a second insulator thin film (11).

摘要翻译： 为了提供能够在没有扩大存储单元区域的情况下，在具有MFMIS结构的半导体非易失性存储器件中的铁电电容器上有效地施加分布电压的半导体非易失性存储器件及其制造方法，铁电非易失性存储元件由 在沟道区域上依次层叠有第一绝缘体层（3），第一导体层（4），铁电体层（5）和第二导体层（6），并且由具有第三导体 ）和分别层叠在源极区域和漏极区域上的第四导体（10），其中第三导体（9）和第四导体（10）经由第一导体层（4）彼此相对，第二导体 绝缘体薄膜（11）。

公开(公告)号：US06215870B1

公开(公告)日：2001-04-10

申请号：US09044027

申请日：1998-03-19

申请人： Hiroki Hirai ,  Masashi Sugimoto ,  Tetsuji Tanaka ,  Shigeki Sakai ,  Yoshito Sakai ,  Nori Inoue ,  Yuichiro Tsutsumi

发明人： Hiroki Hirai ,  Masashi Sugimoto ,  Tetsuji Tanaka ,  Shigeki Sakai ,  Yoshito Sakai ,  Nori Inoue ,  Yuichiro Tsutsumi

IPC分类号： H04M100

CPC分类号： H04M1/04 ,  B60R11/0241 ,  B60R2011/0005 ,  B60R2011/0015 ,  B60R2011/0071 ,  B60R2011/0075

摘要： This invention relates to a phone holder. The phone holder includes a holder main body with an outer box, and a holder connector which is connectable with a mobile phone when the mobile phone is inserted in the holder main body. The position of the holder connector along a direction normal to a connecting direction with the mobile phone is adjusted by bolts and nuts (fixing means). Further, the holder connector is selectively set in the holder main body in a state that a top thereof is oriented upward or downward.

摘要翻译： 本发明涉及电话机支架。 电话机支架包括具有外盒的保持器主体和当移动电话插入保持器主体时可与移动电话连接的保持器连接器。 保持器连接器沿着与移动电话的连接方向垂直的方向的位置由螺栓和螺母（固定装置）调节。 此外，保持器连接器以其顶部朝上或向下取向的状态选择性地设置在保持器主体中。