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44 条记录 (耗时 0.032 秒)

    Spatially-arranged chemical processing station
    21.
    发明授权
    Spatially-arranged chemical processing station 有权
    空间化学处理站

    公开(公告)号：US06939403B2

    公开(公告)日：2005-09-06

    申请号：US10299069

    申请日：2002-11-19

    申请人： Igor Ivanov ,  Chiu Ting ,  Jonathan Weiguo Zhang ,  Arthur Kolics

    发明人： Igor Ivanov ,  Chiu Ting ,  Jonathan Weiguo Zhang ,  Arthur Kolics

    IPC分类号： H01L21/00 ,  H01L21/677 ,  B05C11/02

    CPC分类号： H01L21/67173 ,  H01L21/67017 ,  H01L21/67178 ,  H01L21/67769

    摘要： The present invention discloses a station, e.g., for IC fabrication with a flexible configuration. It consists of an array of processing chambers, which are grouped into processing modules and arranged in a two-dimensional fashion, in vertical levels and horizontal rows, and is capable of operating independent of each other. Each processing chamber can perform electroless deposition and other related processing steps sequentially on a wafer with more than one processing fluid without having to remove it from the chamber. The system is served by a single common industrial robot, which may have random access to all the working chambers and cells of the storage unit for transporting wafers between the wafer cassettes and inlet/outlets ports of any of the chemical processing chambers. The station occupies a service-room floor space and a clean-room floor space. The processing modules and the main chemical management unit connected to the local chemical supply unit occupy a service-room floor space, while the robot and the wafer storage cassettes are located in a clean room. Thus, in distinction to the known cluster-tool machines, the station of the invention makes it possible to transfer part of the units from the expensive clean-room area to less-expensive service area.

    摘要翻译： 本发明公开了一种站，例如用于具有柔性配置的IC制造。 它由一系列处理室组成，它们分组成处理模块，并以垂直水平和水平行的二维方式布置，并且能够彼此独立运行。 每个处理室可以在具有多于一种处理流体的晶片上顺序地进行无电沉积和其它相关处理步骤，而不必将其从室中移除。 该系统由单个通用工业机器人服务，其可以随机访问存储单元的所有工作室和单元，用于在晶片盒之间传送晶片和任何化学处理室的入口/出口端口。 车站占用服务室的空间和洁净室的空间。 连接到本地化学品供应单元的处理模块和主要化学品管理单元占用服务室的空间，而机器人和晶片存储盒位于洁净室中。 因此，与已知的集群工具机器不同，本发明的工作站使得可以将部分单元从昂贵的清洁室区域转移到不太昂贵的服务区域。

    Microelectronic fabrication system components and method for processing a wafer using such components
    22.
    发明申请
    Microelectronic fabrication system components and method for processing a wafer using such components 有权
    微电子制造系统部件和使用这些部件处理晶片的方法

    公开(公告)号：US20050160974A1

    公开(公告)日：2005-07-28

    申请号：US11034363

    申请日：2005-01-10

    申请人： Igor Ivanov ,  Weiguo Zhang

    发明人： Igor Ivanov ,  Weiguo Zhang

    IPC分类号： C23C18/16 ,  H01L21/00 ,  H01L21/288 ,  H01L21/768 ,  C23C14/00

    CPC分类号： H01L21/76843 ,  C23C18/1619 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76874

    摘要： A process chamber is provided which includes a gate configured to align barriers with an opening of the gate and an opening of the process chamber such that the two openings are either sealed or provide an air passage to the chamber. A method is provided and includes sealing an opening of a chamber with a gate latch and exposing a topography to a first set of process steps, opening the gate latch such that an air passage is provided to the process chamber, and exposing the topography to a second set of process steps without allowing liquids within the chamber to flow through the air passage. A substrate holder comprising a clamping jaw with a lever and a support member coupled to the lever is also contemplated herein. A process chamber with a reservoir arranged above a substrate holder is also provided herein.

    摘要翻译： 提供了一种处理室，其包括门，所述门被配置为使障碍物与门的开口和处理室的开口对齐，使得两个开口被密封或提供​​到腔室的空气通道。 提供了一种方法，包括用门闩将密封一个开口的腔室，并将地形暴露于第一组工艺步骤，打开门闩，使得空气通道被提供到处理室，并将该地形暴露于 第二组处理步骤，而不允许室内的液体流过空气通道。 包括具有杠杆的夹爪和联接到杠杆的支撑构件的衬底保持器也在本文中考虑。 本文还提供了一种具有布置在衬底保持器上方的储存器的处理室。

    Spatially-arranged chemical processing station
    24.
    发明申请
    Spatially-arranged chemical processing station 审中-公开
    空间化学处理站

    公开(公告)号：US20070051306A1

    公开(公告)日：2007-03-08

    申请号：US11217750

    申请日：2005-09-01

    申请人： Igor Ivanov ,  Chiu Ting ,  Jonathan Zhang

    发明人： Igor Ivanov ,  Chiu Ting ,  Jonathan Zhang

    IPC分类号： B05C13/02 ,  B05B15/12 ,  B05B3/00 ,  B05C5/00

    CPC分类号： H01L21/67173 ,  H01L21/67017 ,  H01L21/67178 ,  H01L21/67769

    摘要： The present invention discloses a station, e.g., for IC fabrication with a flexible configuration. It consists of an array of processing chambers, which are grouped into processing modules and arranged in a two-dimensional fashion, in vertical levels and horizontal rows, and is capable of operating independent of each other. Each processing chamber can perform electroless deposition and other related processing steps sequentially on a wafer with more than one processing fluid without having to remove it from the chamber. The system is served by a single common industrial robot, which may have a random to access to all the working chambers and cells of the storage unit for transporting wafers between the wafer cassettes and inlet/outlets ports of any of the chemical processing chambers. The station occupies a service-room floor space and a clean-room floor space. The processing modules and the main chemical management unit connected to the local chemical supply unit occupy a service-room floor space, while the robot and the wafer storage cassettes are located in a clean room. Thus, in distinction to the known cluster-tool machines, the station of the invention makes it possible to transfer part of the units from the expensive clean-room area to less-expensive service area.

    摘要翻译： 本发明公开了一种站，例如用于具有柔性配置的IC制造。 它由一系列处理室组成，它们分组成处理模块，并以垂直水平和水平行的二维方式布置，并且能够彼此独立运行。 每个处理室可以在具有多于一种处理流体的晶片上顺序地进行无电沉积和其它相关处理步骤，而不必将其从室中移除。 该系统由单个通用工业机器人服务，其可以随机访问存储单元的所有工作室和单元，以在晶片盒之间传送晶片和任何化学处理室的入口/出口端口。 车站占用服务室的空间和洁净室的空间。 连接到本地化学品供应单元的处理模块和主要化学品管理单元占用服务室的空间，而机器人和晶片存储盒位于洁净室中。 因此，与已知的集群工具机器不同，本发明的工作站使得可以将部分单元从昂贵的清洁室区域转移到不太昂贵的服务区域。

    Methods and systems for processing a microelectronic topography
    26.
    发明申请
    Methods and systems for processing a microelectronic topography 有权

    公开(公告)号：US20050181134A1

    公开(公告)日：2005-08-18

    申请号：US11102143

    申请日：2005-04-08

    申请人： Igor Ivanov ,  Weiguo Zhang

    发明人： Igor Ivanov ,  Weiguo Zhang

    IPC分类号： H01L21/00 ,  H01L21/687 ,  B05D3/04

    CPC分类号： H01L21/68728 ,  H01L21/67051 ,  H01L21/6708 ,  Y02P80/30

    摘要： Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.

    Barrier enhancement process for copper interconnects
    29.
    发明申请
    Barrier enhancement process for copper interconnects 审中-公开
    铜互连的屏障增强过程

    公开(公告)号：US20060076244A1

    公开(公告)日：2006-04-13

    申请号：US11289998

    申请日：2005-11-30

    申请人： Chiu Ting ,  Igor Ivanov

    发明人： Chiu Ting ,  Igor Ivanov

    IPC分类号： C25D7/12 ,  C25D5/10 ,  C25D17/00

    CPC分类号： H01L21/76843 ,  H01L21/288 ,  H01L21/76846 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A damascene process for introducing copper into metallization layers in microelectronic structures includes a step of forming an enhancement layer of a metal alloy, such as a copper alloy or Co—W—P, over the barrier layer, using PVD, CVD or electrochemical deposition prior to electrochemically depositing copper metallization. The enhancement layer has a thickness from 10 Å to 100 Å and conformally covers the discontinuities, seams and grain boundary defects in the barrier layer. The enhancement layer provides a conductive surface onto which a metal layer, such as copper metallization, may be applied with electrochemical deposition. Alternatively, a seed layer may be deposited over the enhancement layer prior to copper metallization.

    摘要翻译： 用于在微电子结构中将铜引入金属化层的镶嵌工艺包括在电化学上之前使用PVD，CVD或电化学沉积在阻挡层上形成诸如铜合金或Co-WP的金属合金增强层的步骤 沉积铜金属化。 增强层具有从10到100埃的厚度，并且保形地覆盖阻挡层中的不连续性，接缝和晶界缺陷。 增强层提供导电表面，在其上可以用电化学沉积施加金属层，例如铜金属化。 或者，在铜金属化之前，种子层可以沉积在增强层上。