公开(公告)号：US20070281492A1

公开(公告)日：2007-12-06

申请号：US11447186

申请日：2006-06-05

Applicant: Jeffrey D. Chinn ,  Boris Kobrin ,  Romuald Nowak

Inventor： Jeffrey D. Chinn ,  Boris Kobrin ,  Romuald Nowak

IPC: H01L21/47

CPC classification number: H01L21/02126 ,  B81C1/00896 ,  B81C2201/053 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02263 ,  H01L21/3121

Abstract: A method of protecting a substrate during fabrication of semiconductor, MEMS, or biotechnology devices. The method includes application of a protective thin film which typically has a thickness ranging from about 3 Å to about 1,000 Å, wherein precursor materials used to deposit the protective thin film are organic-based precursors which include at least one fluorine-comprising functional group at one end of a carbon back bone and at least one functional bonding group at the opposite end of a carbon backbone, and wherein the carbon backbone ranges in length from 4 carbons through about 12 carbons. In many applications at least a portion of the protective thin film is removed during fabrication of the devices.

Abstract translation: 一种在制造半导体，MEMS或生物技术设备期间保护衬底的方法。 该方法包括施加通常具有约3至约1000的厚度的保护性薄膜，其中用于沉积保护性薄膜的前体材料是有机基前体，其包括至少一个含氟官能团 碳骨架的一端和在碳骨架的相对端处的至少一个功能键合基团，其中碳骨架的长度为4个碳到约12个碳原子。 在许多应用中，在制造器件期间，保护薄膜的至少一部分被去除。

公开(公告)号：US20050271893A1

公开(公告)日：2005-12-08

申请号：US10996520

申请日：2004-11-23

Applicant: Boris Kobrin ,  Jeffrey Chinn ,  Romuald Nowak ,  Richard Yi

Inventor： Boris Kobrin ,  Jeffrey Chinn ,  Romuald Nowak ,  Richard Yi

IPC: B05D3/14 ,  B05D7/00 ,  B05D7/24 ,  B21D39/00 ,  B32B9/00 ,  B32B15/04 ,  C23C16/00 ,  C23C16/02 ,  C23C16/40 ,  C23C16/448 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C16/0227 ,  B05D1/185 ,  B05D1/60 ,  B05D3/142 ,  B05D3/145 ,  B05D7/52 ,  B05D7/56 ,  B82Y30/00 ,  B82Y40/00 ,  C03C17/42 ,  C03C23/006 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/402 ,  C23C16/448 ,  C23C16/4485 ,  C23C16/455 ,  C23C16/45557 ,  C23C16/56 ,  Y10T428/12618 ,  Y10T428/12632 ,  Y10T428/24 ,  Y10T428/24355 ,  Y10T428/24967 ,  Y10T428/24975 ,  Y10T428/261 ,  Y10T428/265 ,  Y10T428/31663 ,  Y10T428/31667

Abstract: An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and a SAM organic-based layer is directly deposited over the oxide-based layer. Typically a series of alternating layers of oxide-based layer and organic-based layer are applied.

Abstract translation: 描述了一种用于在基底上施加多层膜/涂层的改进的气相沉积方法和装置。 该方法用于沉积与衬底直接接触的氧化物基层的厚度作为衬底的化学组成的函数来控制多层涂层，由此随后沉积的层更好地结合到氧化物基层。 改进的方法用于沉积多层涂层，其中氧化物基层直接沉积在衬底上，并且基于氧化物的层直接沉积SAM有机基层。 通常，应用一系列交替层的氧化物基层和基于有机的层。

公开(公告)号：US20170243837A9

公开(公告)日：2017-08-24

申请号：US13959601

申请日：2013-08-05

Applicant: Applied Microstructures, Inc.

Inventor： Boris Kobrin ,  Nikunj Dangaria ,  Romuald Nowak ,  Michael T. Grimes

IPC: H01L23/00 ,  H01L21/02

CPC classification number: H01L23/564 ,  B81B3/0075 ,  B81B2207/115 ,  B81C1/00206 ,  B81C1/0038 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/3127 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L23/29 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: An article having a surface treated to provide a protective coating structure in accordance with the following method: vapor depositing a first layer on a substrate, wherein said first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon said first layer, wherein said second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon said second layer, wherein said third layer is a functional organic-comprising layer, wherein said functional organic-comprising layer is a SAM.

公开(公告)号：US08987029B2

公开(公告)日：2015-03-24

申请号：US13286635

申请日：2011-11-01

Applicant: Jeffrey D. Chinn ,  Boris Kobrin ,  Romuald Nowak

Inventor： Jeffrey D. Chinn ,  Boris Kobrin ,  Romuald Nowak

IPC: H01L21/00 ,  B81C1/00 ,  C23C16/44 ,  C23C16/455 ,  H01L21/312

CPC classification number: H01L21/02126 ,  B81C1/00896 ,  B81C2201/053 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02263 ,  H01L21/3121

Abstract: A method of protecting a substrate during fabrication of semiconductor, MEMS devices. The method includes application of a protective thin film which typically has a thickness ranging from 3 angstroms to about 1,000 angstroms, wherein precursor materials used to deposit the protective thin film are organic-based precursors which include at least one fluorine-comprising functional group at one end of a carbon back bone and at least one functional bonding group at the opposite end of a carbon backbone, and wherein the carbon backbone ranges in length from 4 carbons through about 12 carbons. In many applications at least a portion of the protective thin film is removed during fabrication of the devices.

Abstract translation: 一种在制造半导体MEMS器件期间保护衬底的方法。 该方法包括施加通常具有3埃至约1,000埃厚度的保护薄膜，其中用于沉积保护薄膜的前体材料是基于有机的前体，其包括至少一个含氟官能团 碳骨架的末端和在碳骨架的相对端处的至少一个功能性结合基团，并且其中所述碳骨架的长度为4个碳至约12个碳原子。 在许多应用中，在制造器件期间，保护薄膜的至少一部分被去除。

公开(公告)号：US08900695B2

公开(公告)日：2014-12-02

申请号：US12072086

申请日：2008-02-22

Applicant: Boris Kobrin ,  Romuald Nowak ,  Jeffrey D. Chinn

Inventor： Boris Kobrin ,  Romuald Nowak ,  Jeffrey D. Chinn

IPC: H01L21/316 ,  C23C16/40 ,  C23C16/455 ,  B81B3/00

CPC classification number: C09D1/00 ,  B81B3/0075 ,  C08K3/04 ,  C08K3/22 ,  C08K2003/2227 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525

Abstract: The present invention is related to carbon-doped metal oxide films. The carbon-doped metal oxide films provide a low coefficient of friction, for example ranging from about 0.05 to about 0.4. In addition, the carbon-doped metal oxide films applied over a silicon substrate, for example, provide anti-stiction properties, where the measured work of adhesion for a MEMS device cantilever beam coated with the carbon-doped metal oxide film is less than 10 μJ/m2. In addition, the carbon-doped metal oxide films provide unexpectedly good water vapor transmission properties. The carbon content in the carbon-doped metal oxide films ranges from about 5 atomic % to about 20 atomic %.

Abstract translation: 本发明涉及碳掺杂金属氧化物膜。 碳掺杂的金属氧化物膜提供低摩擦系数，例如约0.05至约0.4。 此外，施加在硅衬底上的碳掺杂的金属氧化物膜例如提供抗静电性质，其中测量的涂覆有碳掺杂金属氧化物膜的MEMS器件悬臂梁的粘附力小于10 μJ/ m2。 此外，掺杂碳的金属氧化物膜提供出乎意料的良好的水蒸汽透过性能。 碳掺杂的金属氧化物膜中的碳含量为约5原子％至约20原子％。

公开(公告)号：US20130320509A1

公开(公告)日：2013-12-05

申请号：US13959593

申请日：2013-08-05

Applicant: Applied Microstructures, Inc.

Inventor： Boris Kobrin ,  Nikunj Hirji Dangaria ,  Romuald Nowak ,  Michael T. Grimes

IPC: H01L23/00 ,  H01L21/02

CPC classification number: H01L23/564 ,  B81B3/0075 ,  B81B2207/115 ,  B81C1/00206 ,  B81C1/0038 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/3127 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L23/29 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A moisture barrier coating for protecting a substrate from moisture, comprises an inorganic layer disposed over the substrate, the inorganic layer comprising an oxide or nitride of an element selected from the group consisting of silicon, aluminum, titanium, zirconium, hafnium and combinations thereof; and an organic silicon-containing layer disposed over the inorganic layer.

Abstract translation: 一种用于保护基底免受湿气侵害的防潮涂层，包括设置在该基底上的无机层，该无机层包括选自硅，铝，钛，锆，铪及其组合的元素的氧化物或氮化物; 以及设置在无机层上的有机含硅层。

公开(公告)号：US08545972B2

公开(公告)日：2013-10-01

申请号：US12804866

申请日：2010-07-29

Applicant: Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak ,  Richard C. Yi

Inventor： Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak ,  Richard C. Yi

IPC: C23C16/40 ,  B32B7/02

CPC classification number: C23C16/0227 ,  B05D1/185 ,  B05D1/60 ,  B05D3/142 ,  B05D3/145 ,  B05D7/52 ,  B05D7/56 ,  B82Y30/00 ,  B82Y40/00 ,  C03C17/42 ,  C03C23/006 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/402 ,  C23C16/448 ,  C23C16/4485 ,  C23C16/455 ,  C23C16/45557 ,  C23C16/56 ,  Y10T428/12618 ,  Y10T428/12632 ,  Y10T428/24 ,  Y10T428/24355 ,  Y10T428/24967 ,  Y10T428/24975 ,  Y10T428/261 ,  Y10T428/265 ,  Y10T428/31663 ,  Y10T428/31667

Abstract: An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and an organic-based layer is directly deposited over the oxide-based layer. Typically, a series of alternating layers of oxide-based layer and organic-based layer are applied.

Abstract translation: 描述了一种用于在基底上施加多层膜/涂层的改进的气相沉积方法和装置。 该方法用于沉积与衬底直接接触的氧化物基层的厚度作为衬底的化学组成的函数来控制多层涂层，由此随后沉积的层更好地结合到氧化物基层。 改进的方法用于沉积多层涂层，其中氧化物基层直接沉积在衬底上，并且基于有机的层直接沉积在氧化物基层上。 通常，施加一系列交替层的氧化物基层和基于有机层。

公开(公告)号：US08298614B2

公开(公告)日：2012-10-30

申请号：US12940002

申请日：2010-11-04

Applicant: Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak ,  Richard C. Yi

Inventor： Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak ,  Richard C. Yi

IPC: C23C16/00

CPC classification number: C23C16/0227 ,  B05D1/185 ,  B05D1/60 ,  B05D3/142 ,  B05D3/145 ,  B05D7/52 ,  B05D7/56 ,  B82Y30/00 ,  B82Y40/00 ,  C03C17/42 ,  C03C23/006 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/402 ,  C23C16/448 ,  C23C16/4485 ,  C23C16/455 ,  C23C16/45557 ,  C23C16/56 ,  Y10T428/12618 ,  Y10T428/12632 ,  Y10T428/24 ,  Y10T428/24355 ,  Y10T428/24967 ,  Y10T428/24975 ,  Y10T428/261 ,  Y10T428/265 ,  Y10T428/31663 ,  Y10T428/31667

Abstract: An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and a SAM organic-based layer is directly deposited over the oxide-based layer. Typically a series of alternating layers of oxide-based layer and organic-based layer are applied.

Abstract translation: 描述了一种用于在基底上施加多层膜/涂层的改进的气相沉积方法和装置。 该方法用于沉积与衬底直接接触的氧化物基层的厚度作为衬底的化学组成的函数来控制多层涂层，由此随后沉积的层更好地结合到氧化物基层。 改进的方法用于沉积多层涂层，其中氧化物基层直接沉积在衬底上，并且基于氧化物的层直接沉积SAM有机基层。 通常，应用一系列交替层的氧化物基层和基于有机的层。

公开(公告)号：US08067258B2

公开(公告)日：2011-11-29

申请号：US11447186

申请日：2006-06-05

Applicant: Jeffrey D. Chinn ,  Boris Kobrin ,  Romuald Nowak

Inventor： Jeffrey D. Chinn ,  Boris Kobrin ,  Romuald Nowak

IPC: H01L21/00

CPC classification number: H01L21/02126 ,  B81C1/00896 ,  B81C2201/053 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02263 ,  H01L21/3121

Abstract: A method of protecting a substrate during fabrication of semiconductor, MEMS, or biotechnology devices. The method includes application of a protective thin film which typically has a thickness ranging from about 3 Å to about 1,000 Å, wherein precursor materials used to deposit the protective thin film are organic-based precursors which include at least one fluorine-comprising functional group at one end of a carbon back bone and at least one functional bonding group at the opposite end of a carbon backbone, and wherein the carbon backbone ranges in length from 4 carbons through about 12 carbons. In many applications at least a portion of the protective thin film is removed during fabrication of the devices.

Abstract translation: 一种在制造半导体，MEMS或生物技术设备期间保护衬底的方法。 该方法包括施加通常具有约3至约1000的厚度的保护性薄膜，其中用于沉积保护性薄膜的前体材料是有机基前体，其包括至少一个含氟官能团 碳骨架的一端和在碳骨架的相对端处的至少一个功能键合基团，其中碳骨架的长度为4个碳到约12个碳原子。 在许多应用中，在制造器件期间，保护薄膜的至少一部分被去除。

公开(公告)号：US07879396B2

公开(公告)日：2011-02-01

申请号：US11048513

申请日：2005-01-31

Applicant: Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak ,  Richard C. Yi

Inventor： Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak ,  Richard C. Yi

IPC: C23C16/00

CPC classification number: C23C16/402 ,  B05D1/185 ,  B05D1/60 ,  B05D5/04 ,  B05D7/22 ,  B05D7/222 ,  B05D2254/04 ,  B82Y30/00 ,  C23C16/0227 ,  C23C16/045 ,  Y10T29/49432 ,  Y10T428/1383 ,  Y10T436/11

Abstract: We have developed an improved vapor-phase deposition method and apparatus for the application of layers and coatings on various substrates. The method and apparatus are useful in the fabrication of biotechnologically functional devices, Bio-MEMS devices, and in the fabrication of microfluidic devices for biological applications. In one important embodiment, oxide coatings providing hydrophilicity or oxide/polyethylene glycol coatings providing hydrophilicity can be deposited by the present method, over the interior surfaces of small wells in a plastic micro-plate in order to increase the hydrophilicity of these wells. Filling these channels with a precise amount of liquid consistently can be very difficult. This prevents a water-based sample from beading up and creating bubbles, so that well can fill accurately and completely, and alleviates spillage into other wells which causes contamination.

Abstract translation: 我们已经开发了一种改进的气相沉积方法和装置，用于在各种基底上施加层和涂层。 该方法和装置可用于制造生物技术功能器件，生物MEMS装置以及用于生物应用的微流体装置的制造。 在一个重要的实施方案中，提供亲水性的氧化物涂层或提供亲水性的氧化物/聚乙二醇涂层可以通过本方法在塑料微板的小孔的内表面上沉积，以增加这些孔的亲水性。 用一定量的液体填充这些通道可能非常困难。 这样可以防止水性样品卷入并产生气泡，从而可以精确和完全地填充，并减轻溢出到其他导致污染的孔中。