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    SYSTEM AND METHOD FOR OBTAINING ANISOTROPIC ETCHING OF PATTERNED SUBSTRATES
    23.
    发明申请
    SYSTEM AND METHOD FOR OBTAINING ANISOTROPIC ETCHING OF PATTERNED SUBSTRATES 审中-公开
    用于获取图形基板的异相蚀刻的系统和方法

    公开(公告)号：US20080245674A1

    公开(公告)日：2008-10-09

    申请号：US12040378

    申请日：2008-02-29

    Applicant: Robert J. von Gutfeld ,  Alan C. West

    Inventor： Robert J. von Gutfeld ,  Alan C. West

    IPC: B05D5/04

    CPC classification number: C25F3/02 ,  B81C1/00571 ,  B81C2201/0133 ,  B81C2201/0139 ,  B81C2201/0142 ,  C23F1/02 ,  C23F1/08 ,  H05K3/068 ,  H05K2203/1105 ,  H05K2203/1115

    Abstract: Systems and methods for etching topographic features in non-crystalline or metallic substrates are provided. A protective material is placed and patterned on a surface of the substrate to define exposed and protected regions of the substrate for etching in a liquid etchant having etching rates that are thermally activated. A nonuniform temperature profile is imposed on the substrate so that the temperatures and hence the etching rates at surfaces in the exposed regions are higher than those in the protected regions. Arrangements for imposing the nonuniform temperature profile include heating designated portions of the substrate with light radiation. Alternatively, the non-uniform temperature profile is developed as etching progresses by passing current pulses through the substrate in a manner that causes geometrically non-uniform heating of the substrate.

    Abstract translation: 提供用于蚀刻非晶体或金属基底中的地形特征的系统和方法。 保护材料被放置并图案化在衬底的表面上以限定衬底的暴露和保护区域，以在具有热激活蚀刻速率的液体蚀刻剂中蚀刻。 对基板施加不均匀的温度曲线，使得暴露区域中的表面的温度和蚀刻速率高于受保护区域中的温度。 施加不均匀温度分布的布置包括用光辐射加热衬底的指定部分。 或者，当通过使电流脉冲以导致衬底的几何不均匀加热的方式通过衬底时蚀刻进行蚀刻而开发不均匀的温度分布。

    Liquid-based gravity-driven etching-stop technique for controlling structure dimension
    25.
    发明申请
    Liquid-based gravity-driven etching-stop technique for controlling structure dimension 有权
    液体重力驱动蚀刻停止技术，用于控制结构尺寸

    公开(公告)号：US20060264058A1

    公开(公告)日：2006-11-23

    申请号：US11242866

    申请日：2005-10-05

    Applicant: Wei-Chin Lin ,  Hui-Ling Chang ,  Ching-Hsiang Tsai ,  Chao-Chiun Liang ,  Gen-Wen Hsieh ,  Yuh-Wen Lee

    Inventor： Wei-Chin Lin ,  Hui-Ling Chang ,  Ching-Hsiang Tsai ,  Chao-Chiun Liang ,  Gen-Wen Hsieh ,  Yuh-Wen Lee

    IPC: H01L21/302

    CPC classification number: H01L21/02052 ,  B81B2201/12 ,  B81C1/00626 ,  B81C2201/0142 ,  G01Q60/38

    Abstract: A liquid-based gravity-driven etching-stop technique for controlling structure dimension is provided, where opposite etching trenches in cooperation with an etching-stop solution are used for controlling the dimension of a microstructure on the wafer level. In an embodiment, opposite trenches surrounding the microstructure are respectively etched on sides of the wafer, and the trench depth on the side of the wafer, on which the microstructure is, is equal to the design dimension of the microstructure. Contrarily, it is unnecessary to define the trench depth on the back-side of the chip. In the final step of the fabrication process, when the device is etched, such that the trenches on the sides communicate with each other to separate the microstructure from the whole wafer automatically and thereby shift from the etchant into the etching-stop solution to stop etching.

    Abstract translation: 提供了一种用于控制结构尺寸的液体重力驱动蚀刻停止技术，其中与蚀刻停止溶液配合的相反蚀刻沟槽用于控制晶片级上的微结构的尺寸。 在一个实施例中，围绕微结构的相对的沟槽分别蚀刻在晶片的侧面上，并且在其上的晶片侧面上的沟槽深度等于微结构的设计尺寸。 相反，不需要在芯片的背面限定沟槽深度。 在制造过程的最后步骤中，当器件被蚀刻时，使得侧面上的沟槽彼此连通以自动地将微结构与全部晶片分离，从而从蚀刻剂移动到蚀刻停止溶液中以停止蚀刻 。

    Method for manufacturing a micro-electromechanical device and micro-electromechanical device obtained therewith
    27.
    发明申请
    Method for manufacturing a micro-electromechanical device and micro-electromechanical device obtained therewith 有权
    用于制造微机电装置的方法和由其获得的微机电装置

    公开(公告)号：US20060040505A1

    公开(公告)日：2006-02-23

    申请号：US10531934

    申请日：2003-10-17

    Applicant: Jozef Van Beek ,  Margot Van Grootel

    Inventor： Jozef Van Beek ,  Margot Van Grootel

    IPC: H01L21/302

    CPC classification number: B81C1/00595 ,  B81B2203/0323 ,  B81C2201/0142

    Abstract: The invention relates to a method of manufacturing a micro-electromechanical device (10), in which are consecutively deposited on a substrate (1) a first electroconductive layer (2) in which an electrode (2A) is formed, a first electroinsulating layer (3) of a first material, a second electroinsulating layer (4) of a second material different from the first material, and a second electroconductive layer (5) in which a second electrode (5A) lying opposite the first electrode is formed which together with the first electrode (2A) and the first insulating layer (3) forms the device (10), in which after the second conductive layer (5) has been deposited, the second insulating layer (4) is removed by means of an etching agent which is selective with respect to the material of the second conductive layer (5). According to the invention for the first material and the second material materials are selected which are only limitedly selectively etchable with respect to each other and before depositing the second insulating layer (4) a further layer (6) is provided on top of the first insulating layer (3) of a further material that is selectively etchable with respect to the first material. In this way a silicon oxide and a silicon nitride may be applied for the insulating layers (3, 4) and thus the method according to the invention is very compatible with current IC processes. The second insulating layer (4) is preferably removed locally by etching, then the further layer (6) is completely removed by etching and, finally, the second insulating layer (4) is completely removed by etching.

    Abstract translation: 本发明涉及一种制造微机电器件（10）的方法，其中连续地沉积在其上形成有电极（2A）的第一导电层（2）的基板（1）上，第一电绝缘层 （3），与第一材料不同的第二材料的第二电绝缘层（4）和形成有与第一电极相对的第二电极（5A）的第二导电层（5），其中， 与第一电极（2A）和第一绝缘层（3）一起形成器件（10），其中在第二导电层（5）沉积之后，通过以下步骤除去第二绝缘层（4）： 相对于第二导电层（5）的材料是选择性的蚀刻剂。 根据本发明，选择第一材料和第二材料材料，其仅相对于彼此有限地可选择性地蚀刻，并且在沉积第二绝缘层（4）之前，另外的层（6）设置在第一绝缘体 层（3），其可相对于第一材料可选择性地蚀刻。 以这种方式，可以对绝缘层（3,4）施加氧化硅和氮化硅，因此根据本发明的方法与当前的IC工艺非常兼容。 优选通过蚀刻局部地去除第二绝缘层（4），然后通过蚀刻完全去除另外的层（6），最后通过蚀刻完全去除第二绝缘层（4）。

    Fabrication of a microchip-based electrospray device
    28.
    发明授权
    Fabrication of a microchip-based electrospray device 有权
    基于微芯片的电喷雾装置的制造

    公开(公告)号：US06750076B2

    公开(公告)日：2004-06-15

    申请号：US10246011

    申请日：2002-09-17

    Applicant: Thomas N. Corso

    Inventor： Thomas N. Corso

    IPC: H01L2100

    CPC classification number: B81C1/00087 ,  B81B2201/058 ,  B81C2201/0142

    Abstract: A method for fabricating a nozzle of microchip-based electrospray device is disclosed. The method includes using a primary mask to accurately define the nozzle feature including the annulus and the through hole of the electrospray device. A secondary masking step is conducted to pattern the through channel (typical the photoresist would serve as the secondary mask), followed by the defining and etching of the primary mask containing the full nozzle feature. The secondary mask serves to selectively mask given areas of the primary mask for subsequent etching. The through hole feature of the secondary mask aligns over the already patterned primary mask through channel, except that the secondary mask contains a slightly larger through channel diameter. This serves to mask off the annulus, but allowing the silicon through channel to be exposed for etching.

    Abstract translation: 公开了一种用于制造基于微芯片的电喷雾装置的喷嘴的方法。 该方法包括使用主掩模来精确地限定包括电喷雾装置的环形部分和通孔的喷嘴特征。 进行二次掩模步骤以对穿通通道进行图案化（典型地，光致抗蚀剂将用作辅助掩模），然后限定和蚀刻含有全喷嘴特征的主掩模。 辅助掩模用于选择性地掩蔽初级掩模的给定区域用于随后的蚀刻。 辅助掩模的通孔特征通过通道对准已经图案化的初级掩模，不同之处在于次要掩模包含稍大的通道直径。 这用于掩盖环形，但允许硅通过沟道暴露以进行蚀刻。

    Plasma etch end point detection process
    29.
    发明授权
    Plasma etch end point detection process 失效
    等离子体蚀刻终点检测过程

    公开(公告)号：US5877407A

    公开(公告)日：1999-03-02

    申请号：US898261

    申请日：1997-07-22

    Applicant: Gardy Cadet ,  Dale Edward Ibbotson ,  Tseng-Chung Lee ,  Edward Alois Rietman

    Inventor： Gardy Cadet ,  Dale Edward Ibbotson ,  Tseng-Chung Lee ,  Edward Alois Rietman

    IPC: G01H5/00 ,  G01N29/024 ,  G01N29/02 ,  H01L21/3065

    CPC classification number: B81C1/00587 ,  B81C99/0065 ,  G01H5/00 ,  G01N29/024 ,  B81C2201/0142 ,  G01N2291/011

    Abstract: A method for determining the endpoint of a plasma etch process is disclosed. The endpoint of the plasma etch process is determined using an acoustic cell attached to an exhaust port on a reaction chamber of a plasma reactor. At least a portion of the gas from the reaction chamber flows into the acoustic cell during the plasma etch process. Acoustic signals are periodically transmitted through the gas flowing in the acoustic cell and a first velocity for the acoustic signals associated with etching a first material layer formed on a substrate is determined. Thereafter, the endpoint of the plasma etch step is determined when the first velocity changes to a second velocity associated with etching the first material layer through its thickness to its interface with an underlying material layer. The gas from the reaction chamber optionally flows through a compressor prior to flowing into the acoustic cell. The compressor increases the pressure of the gas that flows into the acoustic cell.

    Abstract translation: 公开了一种用于确定等离子体蚀刻工艺的端点的方法。 使用附着在等离子体反应器的反应室上的排气口的声学单元来确定等离子体蚀刻工艺的终点。 在等离子体蚀刻工艺期间，来自反应室的至少一部分气体流入声学室。 声学信号通过在声学单元中流动的气体周期性地传输，并且确定与蚀刻形成在衬底上的第一材料层相关联的声学信号的第一速度。 此后，当第一速度改变为与将第一材料层通过其厚度蚀刻到其与下层材料层的界面相关联的第二速度时，确定等离子体蚀刻步骤的端点。 来自反应室的气体在流入声室之前可选地流过压缩机。 压缩机增加流入声学室的气体的压力。

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